Infineon Technologies IAUAN04S7N007AUMA1

Overview

IAUAN04S7N007 from Infineon is an N-channel enhancement-mode automotive power MOSFET in PG-HSOF-5-2 package, rated for 40 V V_DS, 0.72 mΩ R_DS(on) at V_GS = 10 V, 330 A chip-limited continuous drain current, and 175 °C maximum operating temperature. It serves as a high-current main switch in 12 V/48 V automotive power distribution systems.

For engineers reviewing the IAUAN04S7N007 datasheet, IAUAN04S7N007 pinout, IAUAN04S7N007 application, or IAUAN04S7N007 equivalent, key selection criteria include its AEC-Q101 qualification, 100% single-pulse avalanche testing, MSL2a reflow compatibility, robust R_DS(on) stability over temperature, and integrated body diode performance for bidirectional energy recovery in motor control and DC-DC phases.

Technical Context

This OptiMOS™ 7 device uses trench-gate superjunction technology optimized for low conduction and switching losses in high-current automotive power stages. Its gate threshold voltage (2.2–3.0 V) enables reliable turn-on with standard 3.3 V or 5 V logic-level drivers while maintaining noise immunity.

The MOSFET features a thermally enhanced HSOF-5-2 package with exposed drain pad for direct PCB thermal coupling, supporting junction-to-case thermal resistance of 1.0 K/W. Its dynamic parameters-including 72–94 nC total gate charge and 95–140 pF reverse transfer capacitance-enable efficient operation in synchronous rectification and high-frequency PWM inverters up to 100 kHz.

Key Specifications

Pinout & Package

PG-HSOF-5-2 is a surface-mount, thermally enhanced package with five terminals: three drain pins (D1–D3), one source pin (S), and one gate pin (G). The exposed drain paddle provides primary thermal path to PCB copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Compared with IAUAN04S7N007, IAUC40N04S6L027 trades higher on-resistance for smaller footprint and lower gate charge, while IPB180N04S4-02 offers superior conduction performance but lacks extended AEC-Q101 validation-making IAUAN04S7N007 the only choice for ASIL-B compliant power distribution nodes.

Availability

IAUAN04S7N007 is available at Aetrix Electronics and suitable for engine start-stop systems, 48 V mild hybrid DC-DC converters, and electric power steering inverters requiring stable component supply across multi-year automotive production programs.

Supply support for IAUAN04S7N007 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

The OptiMOS™ 7 product line delivers next-generation power MOSFETs engineered specifically for high-efficiency, high-reliability automotive electrification systems-including 12 V/48 V architectures, ADAS power domains, and xEV traction auxiliary supplies.

FAQ

What is the maximum allowable PCB copper area for thermal performance in the PG-HSOF-5-2 package?

The datasheet specifies thermal resistance values measured on a 2s2p FR4 PCB per JEDEC JESD51-5/-7 standards, with vertical orientation in still air. For optimal R_thJC = 1.0 K/W, Infineon recommends ≥400 mm² of 2-oz copper connected directly to the exposed drain paddle via ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch). Larger copper areas further reduce R_thJA but do not improve R_thJC.

Does IAUAN04S7N007 support paralleling for higher current applications?

Yes-its positive temperature coefficient of R_DS(on) enables stable current sharing when paralleled. Designers must match gate drive loop inductance and PCB trace impedance across parallel devices. The 4.2 V gate plateau voltage and low gate resistance (1.4 Ω) reduce gate oscillation risk, but individual gate resistors (≥5 Ω) are recommended to dampen ringing in multi-device layouts.

Is the body diode suitable for continuous freewheeling in H-bridge motor drives?

Yes-the body diode is fully characterized with I_S = 200 A continuous and t_rr = 44–66 ns at 100 A. Its forward voltage (0.8–0.95 V at 100 A) and low Q_rr (32–64 nC) minimize conduction and recovery losses during PWM freewheeling. However, synchronous rectification is preferred for >10 kHz operation to avoid diode conduction entirely.

How does the extended AEC-Q101 qualification differ from standard compliance?

Infineon's extended qualification includes additional stress tests beyond AEC-Q101 Rev D: 1000-hour high-temperature gate bias at 175 °C, 2000-cycle temperature cycling (-55 °C to +175 °C), and mechanical shock testing per ISO 16750-3. These validate long-term stability in safety-critical zones such as battery disconnect units and ADAS domain controllers where field failure is unacceptable.