Infineon Technologies IAUAN04S7N008AUMA1

Overview

IAUAN04S7N008AUMA1 from Infineon is an N-channel enhancement-mode automotive power MOSFET in PG-HSOF-5-2 package, rated for 40 V V_DS, 0.82 mΩ R_DS(on) at V_GS = 10 V / I_D = 90 A, and 175 °C maximum junction temperature. It delivers 290 A chip-limited continuous drain current and is 100% avalanche tested for robustness in high-reliability vehicle subsystems such as 12 V battery disconnect and high-current DC-DC output stages.

For engineers reviewing the IAUAN04S7N008AUMA1 datasheet, IAUAN04S7N008AUMA1 pinout, IAUAN04S7N008AUMA1 application, or IAUAN04S7N008AUMA1 equivalent, key selection criteria include its AEC-Q101 qualification beyond standard requirements, MSL2a reflow compatibility up to 260 °C, low gate charge (Q_g = 60–78 nC), and integrated freewheeling diode with t_rr = 41–62 ns.

Technical Context

This OptiMOS™ 7 device uses trench-based silicon technology optimized for low R_DS(on) × Q_g figure-of-merit in 40 V automotive switching applications. Its gate threshold voltage (V_GS(th) = 2.2–3.0 V) enables reliable turn-on with standard 5 V or 3.3 V logic-level drivers while maintaining noise immunity.

The MOSFET integrates a fast, low-loss body diode (V_SD = 0.8–0.95 V at 90 A, t_rr = 41–62 ns) and supports high pulsed currents (I_D,pulse = 915 A, I_AS = 140 A) under transient fault conditions-critical for load dump and inductive kick protection in engine control units and ADAS power stages.

Key Specifications

Pinout & Package

Package: PG-HSOF-5-2 - Thermally enhanced surface-mount package with exposed drain pad for low R_thJC (1.12 K/W) and high-power dissipation on PCB copper planes.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar automotive N-channel power MOSFET applications.

Compared with IAUZ40N04S5L027AUMA1 and IPB180N04S4-02, the IAUAN04S7N008AUMA1 balances low R_DS(on), moderate Q_g, full automotive qualification, and compact PG-HSOF-5-2 footprint-making it optimal for space-constrained, safety-compliant 12 V power stages where gate drive simplicity and thermal robustness are critical.

Availability

IAUAN04S7N008AUMA1 is available at Aetrix Electronics and suitable for engine control units, ADAS camera power supplies, and electric power steering systems requiring stable component supply across multi-year automotive production cycles.

Supply support for IAUAN04S7N008AUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the OptiMOS™ 7 automotive power MOSFET product line, engineered specifically for high-current, high-reliability 12 V vehicle networks-including start-stop, ADAS, EPS, and onboard charging-where thermal resilience, avalanche ruggedness, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum allowable gate-source voltage for IAUAN04S7N008AUMA1?

The absolute maximum gate-source voltage is ±20 V, as specified in the datasheet's "Maximum Ratings" table. Exceeding this risks permanent gate oxide damage. For reliable operation, gate drive should be limited to 10 V for full enhancement, with transient overshoots clamped below ±15 V using Zener diodes or gate driver ICs with built-in protection.

Does IAUAN04S7N008AUMA1 require a heatsink in typical automotive applications?

No dedicated heatsink is required if mounted on ≥200 mm² of 2 oz copper with thermal vias to inner layers, per JEDEC JESD51-5/7 test board conditions. Its R_thJC = 1.12 K/W allows direct PCB thermal transfer; however, in enclosed enclosures above 85 °C ambient, forced airflow or additional copper area is recommended to maintain T_j ≤ 150 °C at 200 A continuous.

Can IAUAN04S7N008AUMA1 be used in synchronous rectification mode?

Yes-the integrated body diode has characterized reverse recovery time (t_rr = 41–62 ns) and charge (Q_rr = 33–66 nC), enabling use as a synchronous rectifier in buck or flyback topologies up to 500 kHz. Gate timing must ensure turn-on before body diode conduction begins to avoid cross-conduction losses.

Is the PG-HSOF-5-2 package lead-free and RoHS compliant?

Yes-IAUAN04S7N008AUMA1 is fully RoHS compliant and uses lead-free terminations. The package meets JEDEC MSL2a classification and supports peak reflow temperatures up to 260 °C, verified per J-STD-020. Marking "7N04N008" and "AUMA1" confirm compliance and date code per Infineon's packaging standards.