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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IAUC120N06S5L022ATMA1

Name: IAUC120N06S5L022ATMA1
Brand: Infineon Technologies
SKU: IAUC120N06S5L022ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IAUC120N06S5L022ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IAUC120N06S5L022ATMA1.pdf

Description:: MOSFET_)40V 60V)

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Product details

Overview

IAUC120N06S5L022ATMA1 from Infineon is an N-channel logic-level automotive power MOSFET in PG-TDSON-8-34 package, rated for 60 V V_DS, 2.20 mΩ R_DS(on) at V_GS = 10 V and I_D = 60 A, with 170 A chip-limited continuous drain current and 175 °C maximum operating temperature. It serves as a high-current switching element in engine control units, battery disconnect circuits, and DC-DC converter primary-side switches.

For engineers reviewing the IAUC120N06S5L022ATMA1 datasheet, IAUC120N06S5L022ATMA1 pinout, IAUC120N06S5L022ATMA1 application, or IAUC120N06S5L022ATMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, avalanche energy rating (30 mJ), thermal resistance (1.10 K/W junction-to-case), and AEC-Q101 qualification status for under-hood deployment.

Technical Context

This OptiMOS™-5 device uses trench-gate superjunction technology optimized for low conduction loss and fast switching in 12 V/48 V automotive systems. Its logic-level gate threshold (1.2–2.2 V) enables direct drive from microcontrollers without level-shifting, while robust 100% unclamped inductive switching (UIS) testing ensures reliability in transient-rich environments like starter motor control and regenerative braking.

The MOSFET integrates a co-packaged body diode with 43 ns reverse recovery time and 40 nC Q_rr, supporting synchronous rectification in bidirectional converters. Its MSL1 rating up to 260 °C peak reflow supports lead-free assembly on high-density automotive PCBs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 48 V automotive architectures and transient overvoltage tolerance per ISO 7637-2.
R_DS(on) @ V_GS=10 V	2.20 mΩ - Enables <1.3 W conduction loss at 75 A, reducing heatsink requirements in high-power motor drivers.
I_D (chip-limited)	170 A - Sustains peak load currents in electric power steering (EPS) and HVAC blower inverters without derating.
E_AS	30 mJ - Withstands single-pulse inductive energy from solenoid de-energization or motor phase commutation.
T_j max	175 °C - Supports operation adjacent to exhaust manifolds or within sealed ECU enclosures without thermal shutdown.
Q_g	77 nC - Determines gate driver power requirement; compatible with Infineon's 2EDN752x half-bridge drivers.
C_iss	5651 pF - Impacts high-frequency switching losses and EMI filter design in 100–500 kHz DC-DC stages.

Pinout & Package

Package: PG-TDSON-8-34 - Thermally enhanced 8-pin exposed-pad surface-mount package with 3.4 mm × 3.3 mm footprint and 1.0 mm height, optimized for low R_thJC (1.10 K/W) via copper-exposed thermal pad soldered to PCB ground plane.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7	Source (S)	Common source connection for all internal dies; tied to PCB thermal pad for optimal heat transfer and low-inductance return path.
4	Gate (G)	Single gate input terminal; requires <1.5 Ω series resistance to damp ringing during 10 V logic-level switching.
8	Drain (D)	Main power output node; internally connected to top-side metal layer and thermally coupled to package backside via die attach.

Key Features

Feature	Design Value
AEC-Q101 qualified beyond standard requirements	Extended HTOL, UHAST, and temperature cycling validation ensures >15-year field life in engine bay applications.
100% UIS tested	Each unit validated for single-pulse avalanche capability up to 30 mJ, eliminating need for external snubbers in inductive loads.
Logic-level gate drive (V_GS(th) = 1.2–2.2 V)	Direct interface with 3.3 V/5 V MCU GPIOs without gate driver ICs, simplifying EPS and ADAS actuator control boards.
Green product (RoHS compliant)	Lead-free, halogen-free construction meets EU ELV Directive and OEM sustainability mandates for vehicle platforms.
MSL1 rating (260 °C peak reflow)	Compatible with standard lead-free reflow profiles used in Tier-1 automotive PCB assembly lines.

Applications

Engine Control Unit (ECU) Fuel Injector Driver

48 V Mild Hybrid DC-DC Converter

Use Scenario: High-speed switching of multi-hole solenoid fuel injectors in gasoline direct injection (GDI) engines.

IC Role / Device Role / Timing Role: Low-side switch controlling injector coil current with 10 µs turn-on/turn-off timing precision.

Use Value: 2.20 mΩ R_DS(on) minimizes I²R heating during 10 ms dwell periods, enabling compact packaging within tight ECU form factors.

Use Scenario: Primary-side synchronous rectifier in bi-directional buck-boost converter linking 12 V and 48 V domains.

IC Role / Device Role / Timing Role: High-current, low-loss power switch operating at 200 kHz with zero-voltage switching (ZVS) assist.

Use Value: 30 mJ E_AS withstands voltage spikes during ZVS transitions, improving system efficiency by 1.2% versus silicon alternatives.

Electric Power Steering (EPS) Motor Phase Leg

Battery Disconnect Switch (BDS)

Use Scenario: Half-bridge leg in three-phase inverter driving 1.5 kW brushless DC motor for column-assist EPS.

IC Role / Device Role / Timing Role: High-side/low-side switching element handling 150 A peak phase current with PWM duty cycle up to 95%.

Use Value: 175 °C T_j max allows operation at ambient temperatures up to 125 °C near steering column, eliminating forced cooling.

Use Scenario: Isolation switch between 12 V starter battery and vehicle electrical system during fault conditions.

IC Role / Device Role / Timing Role: Fail-safe power path controller activated by battery management system (BMS) during overcurrent or short-circuit events.

Use Value: 170 A I_D rating supports cold-cranking surge currents while maintaining <2.5 mΩ on-resistance for minimal voltage drop.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IAUZ40N08S5L030ATMA1	80 V V_DS, 3.0 mΩ R_DS(on), same PG-TDSON-8-34 package	Better overvoltage margin for 48 V systems with high dv/dt transients; higher R_DS(on) increases conduction loss by ~36% at 60 A	Select when ISO 16750-2 pulse 5a immunity exceeds 100 V; avoid if thermal budget is constrained.
IPB180N04S4-02	40 V V_DS, 2.0 mΩ R_DS(on), PG-TO263-7 package	Lower voltage rating limits use to 12 V subsystems only; TO263-7 offers superior thermal performance but larger footprint	Prefer for cost-sensitive 12 V modules where board space permits larger package and 60 V headroom is unnecessary.

Compared with IAUC120N06S5L022ATMA1, the IAUZ40N08S5L030ATMA1 trades conduction efficiency for higher voltage safety margin, while the IPB180N04S4-02 sacrifices system-level voltage compatibility for lower on-resistance in dedicated 12 V domains-making the original part optimal for 48 V mild hybrid integration where both voltage headroom and thermal density matter.

Availability

IAUC120N06S5L022ATMA1 is available at Aetrix Electronics and suitable for engine control units, 48 V DC-DC converters, electric power steering inverters, and battery disconnect switches requiring stable component supply across automotive production lifecycles.

Supply support for IAUC120N06S5L022ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D centers and wafer fabs in Dresden and Villach.

This device belongs to the OptiMOS™-5 automotive power MOSFET family, engineered specifically for high-reliability, high-current switching in 12 V and 48 V vehicle electrical architectures-including xEV traction auxiliary systems and ADAS domain controllers.

FAQ

What is the maximum allowable gate-source voltage for IAUC120N06S5L022ATMA1?

The absolute maximum V_GS is ±20 V, per the datasheet's "Maximum ratings" table. Operation above +20 V risks permanent gate oxide damage, while negative gate voltage beyond –20 V may cause parasitic turn-on in parallel configurations. Recommended gate drive is 0 V to 10 V for logic-level compatibility, with transient overshoot limited to <15 V using RC snubbers or active clamping.

Does IAUC120N06S5L022ATMA1 require a gate resistor, and what value is recommended?

Yes-a gate resistor is required to control dV/dt and prevent oscillation. For 10 V logic-level drive with typical gate charge of 77 nC, a 1.5 Ω series resistor provides optimal trade-off between switching speed (t_d(on) ≈ 7 ns, t_f ≈ 16 ns) and EMI suppression. Values below 0.8 Ω increase ringing risk; above 3.3 Ω unnecessarily extends switching losses in high-frequency applications like DC-DC converters.

How does the body diode performance compare to discrete Schottky diodes in synchronous rectification?

The integrated body diode has V_SD = 0.8–1.1 V at 60 A and t_rr = 43 ns, resulting in higher forward conduction loss than 0.45 V Schottky diodes but eliminating layout complexity and parasitic inductance of external components. Its Q_rr = 40 nC is lower than most FRD alternatives, reducing turn-on loss in hard-switched topologies where ZVS is not implemented.

Is IAUC120N06S5L022ATMA1 suitable for use in inverters driving BLDC motors in ADAS camera gimbals?

Yes-its 175 °C T_j max, 170 A I_D, and 2.20 mΩ R_DS(on) support compact, fanless 300 W motor inverters in space-constrained ADAS housings. The device's low C_iss/C_oss ratio (5.5:1) ensures stable PWM control down to 1% duty cycle, critical for precise gimbal positioning without audible noise or torque ripple.

IAUC120N06S5L022ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 170A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.2mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 65µA

Gate Charge (Qg) (Max) @ Vgs:: 77 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5651 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-34

IAUC120N06S5L022ATMA1 FAQ

1.How can I place an order for IAUC120N06S5L022ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUC120N06S5L022ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IAUC120N06S5L022ATMA1 reliable?

The price and inventory of IAUC120N06S5L022ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUC120N06S5L022ATMA1 is usually 5 days.

3.What payment methods are accepted for IAUC120N06S5L022ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUC120N06S5L022ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IAUC120N06S5L022ATMA1?

IAUC120N06S5L022ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUC120N06S5L022ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUC120N06S5L022ATMA1?

For technical support, including IAUC120N06S5L022ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUC120N06S5L022ATMA1 requirements.

6.How does Aetrix verify that IAUC120N06S5L022ATMA1 is sourced from the original manufacturer or authorized distributors?

All IAUC120N06S5L022ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUC120N06S5L022ATMA1 meets industry standards.

7.What is the process for return or replacement of IAUC120N06S5L022ATMA1?

All IAUC120N06S5L022ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUC120N06S5L022ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUC120N06S5L022ATMA1 part is unused and in its original packaging.

Return procedure for IAUC120N06S5L022ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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