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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IAUC26N10S5L245ATMA1

Name: IAUC26N10S5L245ATMA1
Brand: Infineon Technologies
SKU: IAUC26N10S5L245ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IAUC26N10S5L245ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IAUC26N10S5L245ATMA1.pdf

Description:: MOSFET_(75V 120V( PG-TDSON-8

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Product details

Overview

IAUC26N10S5L245ATMA1 from Infineon Technologies is an automotive-grade N-channel logic-level OptiMOS™-5 power MOSFET with 100 V V_DS, 24.5 mΩ R_DS(on) at V_GS = 10 V, 26 A continuous drain current, 175 °C maximum junction temperature, and 100% single-pulse avalanche tested - deployed in high-reliability DC-DC converters and motor control stages of engine management systems.

For engineers reviewing the IAUC26N10S5L245ATMA1 datasheet, IAUC26N10S5L245ATMA1 pinout, IAUC26N10S5L245ATMA1 application, or IAUC26N10S5L245ATMA1 equivalent, key selection criteria include R_DS(on) stability over temperature, avalanche ruggedness under inductive switching, thermal resistance (R_thJC = 3.7 K/W), and MSL1 reflow compatibility for automotive PCB assembly.

Technical Context

This MOSFET uses trench-based silicon technology optimized for low gate charge (Q_g = 8.5–12.0 nC) and fast switching (t_r = 1 ns, t_f = 3 ns), enabling high-frequency synchronous rectification in 48 V automotive subsystems. Its logic-level gate threshold (V_GS(th) = 1.2–2.2 V) ensures direct drive from 3.3 V/5 V microcontrollers without level-shifting.

The integrated body diode exhibits low reverse recovery charge (Q_rr = 34 nC) and short t_rr (38 ns), reducing commutation losses in half-bridge configurations. Thermal design is supported by a low R_thJC (3.7 K/W) and validated operation up to T_j = 175 °C on JEDEC-standard 2s2p FR4 PCBs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V battery rail with ≥2× voltage margin for load dump transients
R_DS(on) max	24.5 mΩ at V_GS = 10 V - enables <1.5 W conduction loss at 26 A, critical for thermally constrained ECUs
I_D continuous	26 A at T_C = 85 °C - rated for sustained current in engine bay ambient conditions
E_AS	18 mJ - verified avalanche energy withstand capability for inductive turn-off stress in motor drives
Q_g	8.5–12.0 nC - reduces gate driver power demand and switching transition time in high-frequency PWM
R_thJC	3.7 K/W - enables efficient heat transfer to heatsink or copper pour, supporting compact layout
t_rr	38 ns - minimizes diode reverse recovery loss during bridge cross-conduction

Pinout & Package

PG-TDSON-8-33 (8-pin exposed-pad surface-mount package) with thermal pad on underside for enhanced junction-to-case heat dissipation. Pin 1 marked by notch or dot; leads are lead-free and RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7	Source	Internally paralleled source terminals - reduce parasitic inductance and improve current sharing in high-di/dt switching
4	Gate	Single low-impedance gate input - compatible with standard logic-level drivers and isolated gate ICs
8	Drain	Main power drain connection - tied to exposed thermal pad; requires solder stencil optimization for thermal reliability
Thermal Pad	Drain (internally connected)	Primary thermal path to PCB - must be fully soldered to inner-layer copper pour for R_thJC compliance

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V - eliminates need for external gate boosters in 3.3 V MCU-controlled circuits
100% avalanche tested	Each unit validated to 18 mJ single-pulse E_AS - guarantees robustness against inductive kickback in motor and solenoid loads
MSL1 rating	Rated for peak reflow up to 260 °C - ensures process compatibility with lead-free SMT lines without popcorn or delamination risk
Green product	RoHS-compliant, halogen-free, and compliant with ELV Directive - meets automotive OEM environmental requirements
High-temperature operation	Rated for continuous operation up to T_j = 175 °C - supports placement near hot components (e.g., exhaust sensors, turbochargers)

Applications

Engine Control Unit (ECU) Power Stage

48 V Mild Hybrid DC-DC Converter

Use Scenario: High-side switch controlling fuel injector or ignition coil in gasoline/diesel engine management.

IC Role / Device Role / Timing Role: Power switching element handling repetitive 26 A pulsed loads with strict timing accuracy (<1 µs jitter tolerance).

Use Value: Low R_DS(on) and fast t_f minimize switching loss and thermal rise during 10–20 kHz injection cycles.

Use Scenario: Synchronous rectifier in bidirectional buck-boost converter linking 48 V and 12 V domains.

IC Role / Device Role / Timing Role: Low-side switch operating at 200–500 kHz with zero-voltage switching (ZVS) assist.

Use Value: Low Q_gd/Q_gs ratio and 38 ns t_rr reduce dead-time loss and improve efficiency above 95%.

Electric Power Steering (EPS) Motor Driver

Onboard Charger (OBC) Auxiliary Supply

Use Scenario: Half-bridge leg in three-phase inverter driving brushless EPS motor (1–3 kW).

IC Role / Device Role / Timing Role: Phase-leg MOSFET subjected to repetitive avalanche stress during regenerative braking.

Use Value: 100% tested E_AS and 175 °C T_j rating ensure long-term reliability under transient overload conditions.

Use Scenario: Primary-side switch in auxiliary flyback converter powering OBC control circuitry.

IC Role / Device Role / Timing Role: 100 V-rated switch handling 400 V DC link transients during AC input surges.

Use Value: V_(BR)DSS = 100 V with 20% margin over 400 V × √2/2 ensures safe operation during line peaks and ringing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB180N10S5H	R_DS(on) = 1.8 mΩ lower (22.7 mΩ), higher Q_g (13.5 nC), same PG-TDSON-8-33 package	Better conduction loss but higher gate drive demand - suited for lower-frequency, high-current EPS inverters	Select when thermal budget allows higher gate loss and system prioritizes R_DS(on) over switching speed
IAUZ40N10S5L245	Same R_DS(on) (24.5 mΩ), higher I_D rating (40 A), larger die size, identical thermal footprint	Higher current headroom for future-proofing - used where peak surge currents exceed 30 A	Select when board layout permits same footprint but system requires >26 A pulse current margin

Compared with IPB180N10S5H and IAUZ40N10S5L245, IAUC26N10S5L245ATMA1 balances gate drive simplicity, avalanche ruggedness, and thermal performance for mid-power automotive switching - ideal where 26 A continuous current and 18 mJ E_AS define the minimum functional requirement.

Availability

IAUC26N10S5L245ATMA1 is available at Aetrix Electronics and suitable for engine control units, 48 V mild hybrid converters, electric power steering modules, and onboard charger auxiliary supplies requiring stable component supply across automotive production lifecycles.

Supply support for IAUC26N10S5L245ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification aligned to AEC-Q101 and ISO/TS 16949 standards.

This device belongs to the OptiMOS™-5 automotive power MOSFET family, engineered specifically for high-efficiency, high-reliability switching in 12 V, 48 V, and dual-battery vehicle architectures.

FAQ

What is the maximum allowable gate-source voltage for IAUC26N10S5L245ATMA1?

The absolute maximum V_GS is ±20 V per datasheet Rev. 1.1. Operation beyond ±16 V risks irreversible gate oxide damage. For reliable logic-level drive, V_GS should be maintained between 4.5 V (minimum enhancement) and 10 V (optimal R_DS(on)); 12 V is permissible only with series gate resistor limiting peak current during fast edges.

Does IAUC26N10S5L245ATMA1 require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to dampen ringing and limit peak gate current. For typical 48 V automotive PWM at 200 kHz, a 3.5 Ω external resistor is characterized in the datasheet and provides optimal trade-off between switching speed (t_d(on) ≈ 2 ns) and EMI suppression. Lower values increase dv/dt stress; higher values raise switching losses.

Can IAUC26N10S5L245ATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (confirmed in Fig. 6 of datasheet Rev. 1.1) enables stable current sharing. Parallel use requires matched layout (identical trace length/width), common gate drive with local gate resistors, and thermal coupling via shared copper pour. Derate total current by 15% versus sum of individual ratings.

Is the thermal pad of IAUC26N10S5L245ATMA1 electrically isolated?

No - the exposed thermal pad is internally connected to the drain terminal. It must be soldered to a drain-potential copper area on the PCB. Electrical isolation requires insulating thermal interface material, which degrades R_thJC by >2.0 K/W and is not recommended unless mandated by safety standards.

IAUC26N10S5L245ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 26A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 24.5mOhm @ 13A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 13µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 762 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 40W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-33

IAUC26N10S5L245ATMA1 FAQ

1.How can I place an order for IAUC26N10S5L245ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUC26N10S5L245ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IAUC26N10S5L245ATMA1 reliable?

The price and inventory of IAUC26N10S5L245ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUC26N10S5L245ATMA1 is usually 5 days.

3.What payment methods are accepted for IAUC26N10S5L245ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUC26N10S5L245ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IAUC26N10S5L245ATMA1?

IAUC26N10S5L245ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUC26N10S5L245ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUC26N10S5L245ATMA1?

For technical support, including IAUC26N10S5L245ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUC26N10S5L245ATMA1 requirements.

6.How does Aetrix verify that IAUC26N10S5L245ATMA1 is sourced from the original manufacturer or authorized distributors?

All IAUC26N10S5L245ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUC26N10S5L245ATMA1 meets industry standards.

7.What is the process for return or replacement of IAUC26N10S5L245ATMA1?

All IAUC26N10S5L245ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUC26N10S5L245ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUC26N10S5L245ATMA1 part is unused and in its original packaging.

Return procedure for IAUC26N10S5L245ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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