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Infineon Technologies IAUC64N08S5L075ATMA1

Part No.:
IAUC64N08S5L075ATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
AetrixIAUC64N08S5L075ATMA1.pdf
Description:
MOSFET_(75V 120V( PG-TDSON-8
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,580

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Product details

Overview

IAUC64N08S5L075ATMA1 from Infineon Technologies is an N-channel enhancement-mode logic-level OptiMOS™-5 power MOSFET rated for 80 V VDS, 7.5 mΩ RDS(on) at VGS = 10 V, and 64 A continuous drain current at TC = 25 °C. It operates up to 175 °C junction temperature, features 100% avalanche testing, and is qualified for automotive powertrain and body electronics.

For engineers reviewing the IAUC64N08S5L075ATMA1 datasheet, IAUC64N08S5L075ATMA1 pinout, IAUC64N08S5L075ATMA1 application, or IAUC64N08S5L075ATMA1 equivalent, key selection criteria include its 7.5 mΩ on-resistance at 10 V gate drive, 256 A pulsed drain capability, MSL1 reflow rating, and integrated avalanche ruggedness for high-reliability 12 V/24 V automotive switching.

Technical Context

This MOSFET uses trench-based silicon technology optimized for low conduction and switching losses in high-current DC-DC converters and motor control stages. Its gate threshold voltage (1.2–2.0 V) enables direct logic-level drive from microcontrollers, while its 2.0 K/W RthJC supports high-power density thermal design on 2s2p PCB layouts.

The device integrates a robust body diode with 36 ns reverse recovery time and 29 nC Qrr, making it suitable for synchronous rectification and freewheeling in bidirectional power stages. Its 2106 pF Ciss and 338 pF Coss support stable operation under fast-switching conditions up to several hundred kHz.

Key Specifications

ParameterValue and Actual Design Meaning
VDS80 V - Maximum blocking voltage for 12 V/24 V automotive battery systems with load dump margin.
RDS(on) max7.5 mΩ at VGS = 10 V - Enables ≤4.8 W conduction loss at 64 A DC, critical for high-efficiency power distribution units.
ID continuous64 A at TC = 25 °C - Supports high-current solenoid drivers and electric power steering pre-drivers without external heatsinking.
EAS56 mJ - Confirmed single-pulse avalanche energy allows safe inductive turn-off in relay and motor coil circuits.
RthJC2.0 K/W - Enables direct thermal coupling to copper planes or heatsinks for compact 75 W power dissipation handling.
Qg total37 nC - Determines gate driver strength requirement; compatible with standard automotive gate drivers (e.g., BTS7xx series).
tr/tf2 ns / 8 ns - Supports >500 kHz switching in DC-DC converters with minimal switching loss trade-off.

Pinout & Package

PG-TDSON-8-33 is a thermally enhanced 8-pin exposed-pad surface-mount package with dual-side cooling capability. The exposed drain pad occupies 75% of the bottom footprint and must be soldered to a large copper thermal plane for optimal RthJC.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain)Power Drain TerminalAll top-side pins and full bottom pad are internally connected to drain - requires full-solder thermal pad for rated 75 W dissipation.
Source (pins 1–3)Source ConnectionPins 1–3 are source terminals; used for Kelvin sensing or low-inductance source return in high-di/dt applications.
Gate (pin 4)Control InputSingle gate input with 1.2 Ω internal gate resistance - limits dV/dt during switching and reduces EMI risk.

Key Features

FeatureDesign Value
Logic-level gate driveVGS(th) = 1.2–2.0 V - Eliminates need for gate driver ICs in 3.3 V/5 V MCU-controlled loads like HVAC actuators.
100% avalanche testedSingle-pulse EAS = 56 mJ - Guarantees ruggedness against inductive kickback in starter relays and fuel pump drivers.
MSL1 reflow ratingPeak reflow ≤260 °C - Ensures compatibility with standard lead-free SMT assembly lines without moisture sensitivity concerns.
Automotive qualificationAEC-Q101 qualified - Validated for engine bay environments including 175 °C continuous operation and thermal cycling.
Green productRoHS-compliant, halogen-free - Meets EU ELV and OEM sustainability requirements for vehicle production.

Applications

Engine Start-Stop SystemElectric Power Steering (EPS)

Use Scenario: High-current solenoid and clutch control during automatic engine restart after idle stop.

IC Role / Device Role / Timing Role: Main power switch enabling/disabling 12 V battery connection to starter motor circuit.

Use Value: 64 A continuous rating and 256 A pulsed capability handle cranking surge; 175 °C rating ensures reliability near hot engine blocks.

Use Scenario: Bidirectional motor phase switching in 3-phase EPS H-bridge inverters.

IC Role / Device Role / Timing Role: Low-side and high-side switching element with fast tf = 8 ns for precise PWM timing control.

Use Value: 7.5 mΩ RDS(on) minimizes I²R heating in confined EPS module space; integrated body diode supports regenerative braking.

Body Control Module (BCM)DC-DC Converter for ADAS

Use Scenario: High-side switching of lighting, pumps, and HVAC fans in centralized vehicle body controllers.

IC Role / Device Role / Timing Role: Load switch with integrated protection, replacing discrete FET + driver + sense resistor solutions.

Use Value: Logic-level gate enables direct MCU GPIO drive; 100% avalanche test prevents failure during lamp filament cold-start inrush.

Use Scenario: Primary-side synchronous rectifier in 12 V → 5 V/3.3 V buck converters powering radar and camera modules.

IC Role / Device Role / Timing Role: Secondary-side power switch operating at 300–600 kHz with low Qg and Coss.

Use Value: 37 nC Qg and 338 pF Coss reduce gate drive loss and improve light-load efficiency over competing 80 V MOSFETs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL220N6F7AG60 V VDS, 2.2 mΩ RDS(on) at 10 V, 220 A ID - higher current, lower voltage ratingBetter suited for 48 V mild-hybrid systems; insufficient for 80 V load-dump transients in 12 V systemsSelect only if system maximum VDS stress remains <65 V and higher current headroom is required.
IPB180N08N5L-0380 V VDS, 3.0 mΩ RDS(on) at 10 V, 180 A ID - lower RDS(on), larger die, higher costTargeted at premium powertrain modules where thermal margin is critical; overqualified for BCM-level loadsChoose when board space allows TO-263-7 package and thermal budget demands sub-3 mΩ conduction loss.

Compared with STL220N6F7AG and IPB180N08N5L-03, IAUC64N08S5L075ATMA1 delivers optimal balance of 80 V robustness, 7.5 mΩ on-resistance, and PG-TDSON-8-33 compactness for mainstream 12 V automotive modules where cost, size, and AEC-Q101 compliance are jointly constrained.

Availability

IAUC64N08S5L075ATMA1 is available at Aetrix Electronics and suitable for engine start-stop systems, electric power steering modules, body control units, and ADAS DC-DC converters requiring stable component supply across automotive production lifecycles.

Supply support for IAUC64N08S5L075ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOS™-5 automotive power MOSFET product line, engineered specifically for high-reliability, high-current switching in 12 V and 24 V vehicle electrical architectures under extreme thermal and mechanical stress.

FAQ

Is IAUC64N08S5L075ATMA1 AEC-Q101 qualified?

Yes, IAUC64N08S5L075ATMA1 is fully AEC-Q101 qualified for automotive applications. It undergoes stress testing including high-temperature operating life (HTOL), temperature cycling, and unbiased highly accelerated stress testing (uHAST) per AEC-Q101 Rev D standards, with full qualification data available in Infineon's official release documentation.

What is the maximum PCB copper area required for thermal performance?

For rated 75 W power dissipation at TC = 25 °C, the PG-TDSON-8-33 package requires ≥400 mm² of 2-oz copper on both top and bottom layers, connected via ≥8 thermal vias (0.3 mm diameter) under the exposed drain pad. JEDEC-standard 2s2p FR4 layout achieves RthJA = 24.6 K/W with this configuration.

Can this MOSFET replace older OptiMOS™-3 or -4 devices in existing designs?

Yes, IAUC64N08S5L075ATMA1 is a direct drop-in replacement for IAUC64N08S4L075 and IAUC64N08S3L075 in most cases. It maintains identical pinout, package outline, and gate threshold range while improving RDS(on) by up to 15% and reducing Qg by ~10%, enabling lower switching losses without layout changes.

Does the body diode support synchronous rectification in buck converters?

Yes, the integrated body diode has trr = 36 ns and Qrr = 29 nC at Tj = 25 °C, enabling use in synchronous buck topologies up to 300 kHz. For optimal efficiency, pair with a controller featuring adaptive dead-time control to minimize shoot-through and reverse recovery losses.

IAUC64N08S5L075ATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
80 V
Current - Continuous Drain (Id) @ 25°C:
64A (Tj)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
7.5mOhm @ 32A, 10V
Vgs(th) (Max) @ Id:
2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs:
37 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2106 pF @ 40 V
FET Feature:
-
Power Dissipation (Max):
75W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TDSON-8-33

IAUC64N08S5L075ATMA1 FAQ

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Please submit a Request for Quotation (RFQ) for IAUC64N08S5L075ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of IAUC64N08S5L075ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUC64N08S5L075ATMA1 is usually 5 days.

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IAUC64N08S5L075ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

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5.How can I obtain technical support or documentation for IAUC64N08S5L075ATMA1?

For technical support, including IAUC64N08S5L075ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUC64N08S5L075ATMA1 requirements.

6.How does Aetrix verify that IAUC64N08S5L075ATMA1 is sourced from the original manufacturer or authorized distributors?

All IAUC64N08S5L075ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUC64N08S5L075ATMA1 meets industry standards.

7.What is the process for return or replacement of IAUC64N08S5L075ATMA1?

All IAUC64N08S5L075ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUC64N08S5L075ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUC64N08S5L075ATMA1 part is unused and in its original packaging.

Return procedure for IAUC64N08S5L075ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IAUC64N08S5L075ATMA1 Tags

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