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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IAUCN04S6N007TATMA1

Name: IAUCN04S6N007TATMA1
Brand: Infineon Technologies
SKU: IAUCN04S6N007TATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IAUCN04S6N007TATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: IAUCN04S6N007TATMA1.pdf

Description:: MOSFET_(20V 40V)

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Product details

Overview

IAUCN04S6N007TATMA1 from Infineon is an N-channel enhancement-mode automotive power MOSFET in the OptiMOS™ 6 family, rated for 40 V V_DS, 0.75 mΩ R_DS(on) at V_GS = 10 V and I_D = 60 A, with 390 A chip-limited continuous drain current and 175 °C maximum operating temperature. It features top-side cooling, MSL1 reflow compatibility up to 260 °C, and 100% avalanche testing - deployed in high-current DC-DC converters and motor control stages of EV traction inverters and 48 V mild-hybrid systems.

For engineers reviewing the IAUCN04S6N007TATMA1 datasheet, IAUCN04S6N007TATMA1 pinout, IAUCN04S6N007TATMA1 application, or IAUCN04S6N007TATMA1 equivalent, key selection criteria include R_DS(on) at elevated T_j, thermal resistance (R_thJC = 0.36 K/W typ.), avalanche energy rating (E_AS = 95 mJ), gate charge (Q_g = 100–130 nC), and AEC-Q101 qualification status.

Technical Context

This device implements a trench-based silicon MOSFET architecture optimized for low conduction loss and fast switching in high-efficiency automotive power stages. Its 0.75 mΩ R_DS(on) enables <1 W conduction loss at 200 A, while Q_gd = 19–29 nC and t_r/t_f = 7/15 ns support >100 kHz hard-switched operation in synchronous rectifiers and half-bridge motor drivers.

The PG-LHDSO-10-3 package integrates a thermally enhanced top-side cooling pad and drain-connected tab, enabling dual-sided heat extraction. Thermal characterization parameters (y_drain = 5.4 K/W, y_source = 5.3 K/W) are defined for JEDEC-standard 2s2p FR4 PCB with heatsink attachment, supporting accurate board-level thermal modeling under pulsed load conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 48 V automotive battery systems and transient overvoltage margins.
R_DS(on)	0.75 mΩ @ V_GS = 10 V, I_D = 60 A - Enables sub-1 W conduction loss at 200 A, critical for high-current inverter legs.
I_D (chip-limited)	390 A - Current capability constrained by silicon die thermal limits, not package terminals.
E_AS	95 mJ - Single-pulse avalanche energy rating ensures robustness against inductive switching transients in motor drives.
R_thJC	0.36 K/W (typ.) - Low junction-to-case thermal resistance supports direct heatsink mounting via top-side pad.
Q_g	100–130 nC - Total gate charge determines driver power requirement and switching loss trade-off in high-frequency designs.
T_j max	175 °C - Extended junction temperature rating enables operation in under-hood environments without derating.

Pinout & Package

Package: PG-LHDSO-10-3 - Thermally enhanced leadless package with exposed top-side drain pad for direct heatsink contact and 10-signal-terminal configuration (6 drain pins + 3 source pins + 1 gate pin). Compliant with MSL1 reflow profile (peak 260 °C).

Pin/Terminal	Circuit Role	Design Meaning
Drain Pins 1–6 & Tab	High-current drain connection	All six drain pins and large metal tab are internally shorted to drain - used for parallel current paths and primary thermal path to heatsink.
Source Pins 7–9	Low-side return path	Three dedicated source terminals minimize source inductance and improve gate drive stability in high-dI/dt applications.
Gate Pin 10	Control input	Single gate terminal with 0.97 Ω typical gate resistance - designed for standard 12 V gate drivers with minimal external series resistance.

Key Features

Feature	Design Value
AEC-Q101 qualified beyond standard requirements	Extended electrical testing and reliability validation for automotive safety-critical power stages.
Top-side cooling architecture	Thermal path from junction to heatsink via exposed drain pad reduces R_thJC to 0.36 K/W (typ.), enabling compact thermal design.
100% single-pulse avalanche tested	Guarantees minimum 95 mJ E_AS per unit - eliminates need for system-level avalanche derating in motor control.
Robust gate oxide with ±20 V V_GS rating	Withstands gate transients during fault conditions and enables use of simple gate clamp circuits.
Low Q_gd/Q_g ratio (0.22–0.23)	Improves Miller immunity and enables stable operation at high dV/dt (>50 V/ns) in half-bridge configurations.

Applications

Electric Power Steering (EPS)

48 V Mild-Hybrid DC-DC Converter

Use Scenario: High-efficiency bidirectional buck-boost converter stepping between 12 V starter battery and 48 V Li-ion auxiliary battery.

IC Role / Device Role / Timing Role: Primary high-side switch in synchronous rectifier stage, operating at 100–200 kHz with 200–300 A peak current.

Use Value: 0.75 mΩ R_DS(on) and 0.36 K/W R_thJC enable >97% efficiency at full load while maintaining T_j < 150 °C without forced air cooling.

Use Scenario: Compact, high-power-density motor driver for electric power steering column assist units.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg, handling 390 A chip-limited current during torque surge events.

Use Value: 175 °C T_j max and 100% avalanche testing ensure reliable operation during sudden load dumps and phase short-circuits.

Traction Inverter Half-Bridge Stage

On-Board Charger (OBC) Isolation Stage

Use Scenario: High-current switching cell in 800 V EV traction inverter's auxiliary 400 V DC link stage.

IC Role / Device Role / Timing Role: High-side switch in asymmetric half-bridge topology, conducting 300 A continuous with 10 µs turn-off delay.

Use Value: Q_gd = 19–29 nC and t_d(off) = 33 ns allow precise dead-time control and minimize shoot-through risk at 150 kHz switching frequency.

Use Scenario: Secondary-side synchronous rectifier in CLLC resonant converter of 11 kW OBC.

IC Role / Device Role / Timing Role: Fast-recovery body diode operation during zero-voltage switching transitions, with V_SD = 0.8–1.1 V at 60 A.

Use Value: Low reverse recovery charge (Q_rr = 42 nC) and t_rr = 46 ns reduce diode conduction loss and EMI generation during soft-switching transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IAUZ40N04S5L027ATMA1	R_DS(on) = 2.7 mΩ (higher), Q_g = 42 nC (lower), same PG-LHDSO-10-3 package	Better suited for lower-current, higher-frequency SMPS where switching loss dominates conduction loss	Select when system operates below 100 A and prioritizes gate drive simplicity over ultra-low R_DS(on).
IPB180N04S4H5ATMA1	R_DS(on) = 0.45 mΩ (lower), but only AEC-Q101 qualified (not extended), R_thJC = 0.45 K/W (higher)	Higher conduction efficiency but reduced thermal margin and no extended qualification for safety-critical modules	Prefer for non-safety-critical 48 V loads where cost-per-watt is primary, but avoid in EPS or ADAS power stages.

Compared with IAUZ40N04S5L027ATMA1 and IPB180N04S4H5ATMA1, IAUCN04S6N007TATMA1 uniquely balances ultra-low R_DS(on), extended AEC-Q101 validation, and top-side cooling - making it optimal for high-current, thermally constrained automotive inverters requiring both efficiency and functional safety compliance.

Availability

IAUCN04S6N007TATMA1 is available at Aetrix Electronics and suitable for electric power steering (EPS), 48 V mild-hybrid DC-DC converters, and traction inverter half-bridge stages requiring stable component supply, long-term automotive lifecycle support, and traceable AEC-Q101 qualification documentation.

Supply support for IAUCN04S6N007TATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

This part belongs to the OptiMOS™ 6 automotive power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in 48 V and hybrid-electric vehicle architectures - emphasizing low R_DS(on), robust avalanche capability, and top-side thermal management.

FAQ

What is the maximum allowable gate-source voltage for IAUCN04S6N007TATMA1?

The absolute maximum gate-source voltage is ±20 V, with recommended operating range of –2 V to +10 V for normal switching. Gate oxide integrity is guaranteed across this range, and the device supports 12 V gate drive with external clamping. Exceeding ±20 V risks permanent gate oxide damage, even for transient events.

Does IAUCN04S6N007TATMA1 require a negative gate turn-off voltage in high-dV/dt applications?

No. The device's gate threshold voltage (2.2–3.0 V) and robust oxide design allow reliable turn-off with 0 V gate drive. Negative gate bias is not required, though a –2 V to 0 V turn-off voltage may be used to improve noise immunity in noisy automotive environments without degrading reliability.

How is thermal performance affected when using only bottom-side PCB cooling without a heatsink?

Without top-side heatsink attachment, R_thJA rises to 45 K/W (typ.), limiting continuous current to ~60 A at T_C = 85 °C. Full 390 A capability requires active top-side cooling via the exposed drain pad - bottom-side-only operation sacrifices >85% of rated current capacity and violates thermal design intent.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

Yes. The integrated body diode is rated for 120 A continuous forward current (T_C = 25 °C) and 1300 A pulsed current, with V_SD = 0.8–1.1 V at 60 A and t_rr = 46 ns. It is fully characterized for synchronous rectifier use in LLC and phase-shifted full-bridge topologies, provided layout minimizes source inductance.

IAUCN04S6N007TATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IAUCN04S6N007TATMA1 FAQ

1.How can I place an order for IAUCN04S6N007TATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUCN04S6N007TATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IAUCN04S6N007TATMA1 reliable?

The price and inventory of IAUCN04S6N007TATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUCN04S6N007TATMA1 is usually 5 days.

3.What payment methods are accepted for IAUCN04S6N007TATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUCN04S6N007TATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IAUCN04S6N007TATMA1?

IAUCN04S6N007TATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUCN04S6N007TATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUCN04S6N007TATMA1?

For technical support, including IAUCN04S6N007TATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUCN04S6N007TATMA1 requirements.

6.How does Aetrix verify that IAUCN04S6N007TATMA1 is sourced from the original manufacturer or authorized distributors?

All IAUCN04S6N007TATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUCN04S6N007TATMA1 meets industry standards.

7.What is the process for return or replacement of IAUCN04S6N007TATMA1?

All IAUCN04S6N007TATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUCN04S6N007TATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUCN04S6N007TATMA1 part is unused and in its original packaging.

Return procedure for IAUCN04S6N007TATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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