Infineon Technologies IAUCN04S6N009TATMA1

Overview

IAUCN04S6N009TATMA1 from Infineon Technologies is an N-channel enhancement-mode automotive power MOSFET in the OptiMOS™ 6 family, rated for 40 V V_DS, 0.89 mΩ R_DS(on) at V_GS = 10 V and I_D = 60 A, with 330 A chip-limited continuous drain current and 175 °C maximum operating temperature. It supports top-side cooling and is qualified to AEC-Q101 for under-hood motor control and DC-DC converter applications.

For engineers reviewing the IAUCN04S6N009TATMA1 datasheet, IAUCN04S6N009TATMA1 pinout, IAUCN04S6N009TATMA1 application, or IAUCN04S6N009TATMA1 equivalent, key selection criteria include its 0.89 mΩ on-resistance at 10 V gate drive, 100% avalanche-tested ruggedness, MSL1 reflow compatibility up to 260 °C, and PG-LHDSO-10-2 package with drain-connected tab for high-current thermal management.

Technical Context

This MOSFET employs a trench-based silicon process optimized for low R_DS(on) × Q_g figure-of-merit and fast switching with 80 nC total gate charge (typ.) and 12 ns fall time. Its gate threshold voltage is tightly distributed between 2.2 V and 3.0 V, enabling robust gate drive margin in noisy automotive environments.

The device integrates a co-packaged freewheeling diode with 120 A continuous forward current capability, 0.8 V forward voltage at 60 A and 25 °C, and 41 ns reverse recovery time - supporting synchronous rectification and bidirectional energy transfer in high-efficiency traction inverters and battery disconnect circuits.

Key Specifications

Pinout & Package

IAUCN04S6N009TATMA1 is housed in the PG-LHDSO-10-2 package - a 10-pin leadless surface-mount device with exposed drain tab on the top side for thermal conduction and mechanical anchoring. The package supports MSL1 handling and 260 °C peak reflow.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Compared with IAUZ40N04S5L027ATMA1 and IPB180N04S4H02ATMA1, IAUCN04S6N009TATMA1 uniquely combines top-side cooling, MSL1 reflow tolerance, and 0.89 mΩ on-resistance in a compact 10-pin LHDSO package - making it optimal for space-constrained, thermally aggressive automotive modules where board-side heatsinking is impractical.

Availability

IAUCN04S6N009TATMA1 is available at Aetrix Electronics and suitable for electric power steering (EPS), 48 V mild hybrid DC-DC converters, and on-board chargers (OBC) requiring stable component supply, long-term automotive lifecycle support, and validated thermal performance under transient load conditions.

Supply support for IAUCN04S6N009TATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This part belongs to the OptiMOS™ 6 automotive power MOSFET product line, engineered specifically for high-current, high-temperature switching in electrified vehicle subsystems including traction inverters, battery management, and ADAS power domains.

FAQ

What is the maximum allowable gate-source voltage for IAUCN04S6N009TATMA1?

The absolute maximum gate-source voltage is ±20 V, per the datasheet's "Maximum ratings" table. Operation above +15 V or below –10 V risks permanent gate oxide damage. Recommended gate drive is +10 V to +12 V for full enhancement with margin, and –5 V for fast turn-off and noise immunity in high-dV/dt environments like motor drives.

Does IAUCN04S6N009TATMA1 support paralleling for higher current capacity?

Yes - its positive temperature coefficient of R_DS(on) (0.95 mΩ at 25 °C rising to 1.7 mΩ at 175 °C) enables inherently stable current sharing. Layout best practices include matched gate trace lengths, Kelvin source connections, and symmetrical thermal vias to each source pin to avoid imbalance exceeding ±8% at 300 A total current.

How is thermal performance affected when using only PCB copper instead of an external heatsink?

With 2s2p FR4 PCB (JEDEC JESD51-7), R_thJA is 49 K/W - limiting continuous power dissipation to ~6 W at 85 °C ambient. However, the top-side drain tab enables direct attachment to a heatsink, reducing R_thJC to 0.42 K/W and supporting >300 W with a 10 K/W heatsink, making external cooling essential for >50 A RMS applications.

Is the integrated body diode suitable for synchronous rectification in a 48 V–12 V buck converter?

Yes - the diode has 120 A continuous forward current rating, 0.8 V V_SD at 60 A and 25 °C, and 41 ns t_rr with low Q_rr (38 nC). These parameters enable >95% efficiency at 100 kHz switching with minimal reverse recovery loss, provided gate timing avoids shoot-through and layout minimizes source inductance.