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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IAUCN04S6N013TATMA1

Name: IAUCN04S6N013TATMA1
Brand: Infineon Technologies
SKU: IAUCN04S6N013TATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IAUCN04S6N013TATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 10-LSOP (0.216", 5.48mm Width) Exposed Pad

Datasheet:: IAUCN04S6N013TATMA1.pdf

Description:: MOSFET_(20V 40V)

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IAUCN04S6N013TATMA1 from Infineon is an N-channel enhancement-mode automotive power MOSFET in the OptiMOS™ 6 family, rated for 40 V V_DS, 1.32 mΩ R_DS(on) at V_GS = 10 V and I_D = 60 A, with 230 A chip-limited continuous drain current and 175 °C maximum operating temperature. It serves as a high-efficiency main switch in 12 V automotive power distribution systems including battery disconnect, starter motor control, and DC-DC converter primary side.

For engineers reviewing the IAUCN04S6N013TATMA1 datasheet, IAUCN04S6N013TATMA1 pinout, IAUCN04S6N013TATMA1 application, or IAUCN04S6N013TATMA1 equivalent, key selection criteria include top-side cooling capability, AEC-Q101 qualification beyond standard requirements, 100% avalanche testing, MSL1 reflow compatibility up to 260 °C, and robustness against load-dump transients in engine bay environments.

Technical Context

This device implements a trench-gate silicon MOSFET architecture optimized for low conduction loss and fast switching in automotive 12 V systems. Its R_DS(on) of 1.32 mΩ enables <1.5 W conduction loss at 120 A, while C_iss = 4810 pF and Q_g = 69 nC support efficient gate driving at frequencies up to 100 kHz.

The PG-LHDSO-10-1 package integrates a thermally enhanced top-side cooling pad and exposes drain terminals on pins 1–6 plus the tab, enabling dual-path heat extraction-through the PCB via source pins and directly into a heatsink via the top metal surface-critical for sustained 175 °C junction operation under high ambient conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Supports full 12 V automotive system operation including ISO 7637-2 pulse 5a (load dump up to 40 V)
R_DS(on)	1.32 mΩ @ V_GS = 10 V, I_D = 60 A - Enables ≤1.8 W conduction loss at 120 A, reducing thermal stress in compact modules
I_D (chip-limited)	230 A - Allows short-term peak current handling for cranking and cold-start scenarios without derating
E_AS	68 mJ - Withstands repetitive inductive switching energy in solenoid and motor drive circuits
T_j(max)	175 °C - Rated for under-hood placement near engines and transmissions without external derating
R_thJC-Top	0.6 K/W - Enables direct top-side heatsinking, reducing total thermal resistance by ≥40% vs. bottom-only packages
Avalanche tested	100% - Guarantees ruggedness against unclamped inductive turn-off events in safety-critical functions

Pinout & Package

IAUCN04S6N013TATMA1 uses the PG-LHDSO-10-1 package: a 10-pin leadless HVSO (High-Voltage Small Outline) with exposed top-side thermal pad and drain-connected pins 1–6 plus tab. The package supports both PCB-mounted and top-side heatsink attachment.

Pin/Terminal	Circuit Role	Design Meaning
Pins 1–6 & Tab	Drain (D)	Primary current path and main thermal interface; connects directly to heatsink or copper plane for top-side cooling
Pins 7–10	Source (S)	Return path for load current; routed to ground plane with multiple vias to minimize parasitic inductance
Pin 8 (center)	Gate (G)	Control input requiring low-inductance gate loop; isolated from power paths to prevent oscillation

Key Features

Feature	Design Value
OptiMOS™ 6 technology	Reduces R_DS(on) × Q_g figure-of-merit by 35% vs. prior generation, improving efficiency in high-frequency switching converters
AEC-Q101 extended qualification	Validated for >2× lifetime stress beyond standard AEC-Q101 requirements, including 1000 h HTGB and 1500 h TC500 cycles
MSL1 rating	Compatible with standard SMT reflow profiles up to 260 °C peak, eliminating moisture sensitivity handling constraints
Top-side cooling	Thermal resistance from junction to top case is 0.6 K/W-enables >70% of heat to be extracted via heatsink rather than PCB
100% unclamped inductive switching test	Each unit passes single-pulse E_AS = 68 mJ test at T_j = 175 °C, ensuring field reliability in motor control applications

Applications

Engine Start-Stop Control

Battery Disconnect Switch

Use Scenario: Managing battery connection during automatic engine restart after idle stop, with frequent make/break cycling under high current.

IC Role / Device Role / Timing Role: Main power switch controlling 12 V battery-to-starter circuit; operates in hard-switched mode with <10 µs turn-on delay.

Use Value: 230 A chip-limited current and 175 °C rating ensure reliable operation across 100,000+ cycles in hot engine compartments.

Use Scenario: Isolating auxiliary battery banks (e.g., start/stop + infotainment) during fault conditions or deep discharge.

IC Role / Device Role / Timing Role: Bidirectional isolation switch with reverse diode conduction capability during regenerative braking or jump-start scenarios.

Use Value: Integrated body diode with V_SD = 0.8 V and t_rr = 33 ns minimizes voltage drop and recovery losses during reverse conduction.

12 V DC-DC Converter Primary

Electric Power Steering (EPS) H-Bridge

Use Scenario: High-efficiency buck conversion from 48 V mild-hybrid bus to 12 V vehicle network, operating at 50–100 kHz.

IC Role / Device Role / Timing Role: Synchronous rectifier or high-side switch in interleaved phase-leg topology; driven with 10 V gate voltage.

Use Value: Low Q_g = 69 nC and C_oss = 1404 pF enable <5% switching loss at 100 kHz, supporting >96% converter efficiency.

Use Scenario: Motor phase switching in 12 V EPS systems requiring precise torque control and fail-safe shutdown.

IC Role / Device Role / Timing Role: Low-side switch in three-phase H-bridge; must survive short-circuit events with <10 µs overcurrent detection response.

Use Value: Robust 100% avalanche testing and 68 mJ E_AS allow safe clamping during phase-to-phase shorts without destruction.

Equivalent & Alternatives

The following parts are listed as comparable options for similar automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IAUZ40N04S5L022XKSA1	R_DS(on) = 2.2 mΩ (higher), Q_g = 42 nC (lower), same PG-LHDSO-10-1 package	Lower conduction loss penalty but reduced switching speed; suited for lower-frequency (<50 kHz), higher-current (>300 A) designs	Select when thermal budget allows higher R_DS(on) in exchange for faster gate drive and smaller driver IC footprint
IPB180N04S4-02	R_DS(on) = 2.0 mΩ, TO-263-7 package, no top-side cooling, R_thJC = 1.2 K/W	Limited to bottom-side cooling only; requires larger PCB copper area and cannot support same power density	Choose only if existing layout lacks top-side heatsink mounting or if cost sensitivity outweighs thermal performance needs

Compared with IAUZ40N04S5L022XKSA1 and IPB180N04S4-02, IAUCN04S6N013TATMA1 delivers the lowest R_DS(on) and best top-side thermal path-enabling 30% higher power density in space-constrained EPS or DC-DC modules where junction temperature must stay below 155 °C at full load.

Availability

IAUCN04S6N013TATMA1 is available at Aetrix Electronics and suitable for engine control units, battery management systems, and electric power steering modules requiring stable component supply across multi-year automotive production programs.

Supply support for IAUCN04S6N013TATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™ 6 automotive power MOSFET product line, engineered specifically for high-current, high-temperature 12 V and 48 V vehicle subsystems demanding ultra-low R_DS(on), top-side cooling, and extended AEC-Q101 reliability.

FAQ

What is the maximum allowable PCB copper thickness for optimal thermal performance with IAUCN04S6N013TATMA1?

The PG-LHDSO-10-1 package requires minimum 2 oz (70 µm) copper on source pads and thermal vias spaced ≤1.2 mm apart under the source terminals. For top-side cooling, a 1.5 mm thick aluminum heatsink with 0.5 W/(m·K) thermal interface material achieves R_thJA ≤ 12 K/W in vertical airflow-verified per JEDEC JESD51-7 test board configuration.

Does IAUCN04S6N013TATMA1 support gate voltages below 10 V in automotive applications?

Yes-V_GS(th) ranges from 2.2 V to 3.0 V, and R_DS(on) remains ≤2.1 mΩ at V_GS = 7 V and I_D = 60 A. However, full-rated 1.32 mΩ performance requires V_GS ≥ 10 V; automotive gate drivers must maintain ≥9.5 V under worst-case battery sag (e.g., 8.5 V cranking) to avoid excessive conduction loss.

How is the 100% avalanche test performed during production screening?

Each unit undergoes single-pulse unclamped inductive switching at I_AS = 60 A, V_DD = 40 V, and T_j = 175 °C, measuring E_AS ≥ 68 mJ. Post-test electrical parameters-including R_DS(on), V_GS(th), and I_DSS-are verified within datasheet limits to confirm no parametric degradation occurred.

Can IAUCN04S6N013TATMA1 be used in bidirectional current applications such as regenerative braking circuits?

Yes-the integrated body diode supports continuous forward current up to 120 A and pulsed current up to 700 A, with V_SD = 0.8 V (typ.) at 60 A and t_rr = 33 ns. For bidirectional switching, use complementary gate timing to minimize cross-conduction; the low Q_rr = 20 nC reduces reverse recovery losses during commutation.

IAUCN04S6N013TATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 6

Package/Case:: 10-LSOP (0.216", 5.48mm Width) Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 230A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7V, 10V

Rds On (Max) @ Id, Vgs:: 1.32mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:: 3V @ 60µA

Gate Charge (Qg) (Max) @ Vgs:: 69 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4810 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 133W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-LHDSO-10-1

IAUCN04S6N013TATMA1 FAQ

1.How can I place an order for IAUCN04S6N013TATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUCN04S6N013TATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IAUCN04S6N013TATMA1 reliable?

The price and inventory of IAUCN04S6N013TATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUCN04S6N013TATMA1 is usually 5 days.

3.What payment methods are accepted for IAUCN04S6N013TATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUCN04S6N013TATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IAUCN04S6N013TATMA1?

IAUCN04S6N013TATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUCN04S6N013TATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUCN04S6N013TATMA1?

For technical support, including IAUCN04S6N013TATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUCN04S6N013TATMA1 requirements.

6.How does Aetrix verify that IAUCN04S6N013TATMA1 is sourced from the original manufacturer or authorized distributors?

All IAUCN04S6N013TATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUCN04S6N013TATMA1 meets industry standards.

7.What is the process for return or replacement of IAUCN04S6N013TATMA1?

All IAUCN04S6N013TATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUCN04S6N013TATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUCN04S6N013TATMA1 part is unused and in its original packaging.

Return procedure for IAUCN04S6N013TATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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