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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IAUCN04S6N017TATMA1

Name: IAUCN04S6N017TATMA1
Brand: Infineon Technologies
SKU: IAUCN04S6N017TATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IAUCN04S6N017TATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 10-LSOP (0.216", 5.48mm Width) Exposed Pad

Datasheet:: IAUCN04S6N017TATMA1.pdf

Description:: MOSFET_(20V 40V)

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Product details

Overview

IAUCN04S6N017TATMA1 from Infineon is an N-channel enhancement-mode automotive power MOSFET in the OptiMOS™ 6 family, rated for 40 V V_DS, 1.73 mΩ R_DS(on) at V_GS = 10 V and I_D = 60 A, with 200 A chip-limited continuous drain current and 175 °C maximum operating temperature. It serves as a high-current, low-loss main switch in 12 V automotive power stages including battery disconnect, DC-DC converters, and motor control inverters.

For engineers reviewing the IAUCN04S6N017TATMA1 datasheet, IAUCN04S6N017TATMA1 pinout, IAUCN04S6N017TATMA1 application, or IAUCN04S6N017TATMA1 equivalent, key selection criteria include its AEC-Q101 qualification, top-side cooling capability, 100% avalanche testing, MSL1 reflow rating, and thermal resistance of 0.73 K/W (junction-to-case).

Technical Context

This device implements a trench-based silicon MOSFET structure optimized for low R_DS(on) × Q_g figure-of-merit in 12 V automotive systems. Its gate threshold voltage (2.2–3.0 V) enables robust drive compatibility with standard 3.3 V/5 V logic controllers, while its 42–63 pF Crss supports fast switching with controlled EMI.

The integrated body diode exhibits 0.8–1.1 V forward voltage at 60 A and 25 °C, with 24 ns reverse recovery time and 8 nC Q_rr, enabling efficient synchronous rectification and freewheeling in hard-switched topologies without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V battery rail applications with transient overvoltage margin.
R_DS(on)	1.73 mΩ @ V_GS=10 V, I_D=60 A - Enables ≤1.2 W conduction loss at 90 A system-level current with PCB trace and package resistance included.
I_D (chip-limited)	200 A - Supports high-pulse load handling in starter motors, solenoid drivers, and regenerative braking circuits.
T_j max	175 °C - Allows operation in under-hood environments without derating in engine bay-mounted modules.
R_thJC	0.73 K/W - Confirms effective thermal path to heatsink via top-side cooling pad, critical for compact power module integration.
E_AS	58 mJ - Validated single-pulse avalanche energy ensures robustness against inductive switching faults in motor drives.
Q_g	49 nC - Determines gate driver power requirement; compatible with standard automotive gate drivers (e.g., 1 A peak output).

Pinout & Package

IAUCN04S6N017TATMA1 uses the PG-LHDSO-10-1 package - a 10-pin leadless, top-side cooled, thermally enhanced SO-style housing with exposed drain paddle on top surface and source/drain terminals on bottom side. The package supports solder reflow up to 260 °C (MSL1) and enables direct heatsink attachment to the top metal pad.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Top Pad)	Main power drain connection	Exposed copper top pad serves as primary thermal interface and high-current drain node; requires direct heatsink contact.
Pins 1–5, 7–10	Source terminals	Eight parallel source pins minimize source inductance and resistive drop; enable Kelvin sensing in high-precision current monitoring designs.
Pin 6	Gate	Single dedicated gate input with 2.5 Ω typical gate resistance; designed for low-noise, dV/dt-immune gate drive routing.

Key Features

Feature	Design Value
AEC-Q101 qualified + extended electrical test	Validated beyond standard automotive stress requirements, including HTGB, HTRB, and UHAST, ensuring reliability in safety-critical ECUs.
Top-side cooling architecture	Enables >70% of total heat dissipation through top metal pad, reducing PCB thermal burden and allowing smaller board area vs. bottom-cooled alternatives.
100% unclamped inductive switching (UIS) tested	Each unit verified for avalanche ruggedness at 58 mJ, eliminating need for external snubbers in motor phase-leg and solenoid drive applications.
Low Crss (42–63 pF)	Minimizes Miller-induced shoot-through risk during hard switching, supporting reliable 100 kHz+ PWM operation in 48 V/12 V bidirectional converters.

Applications

Engine Start-Stop Control Module

12 V Battery Disconnect Switch

Use Scenario: Managing cranking current interruption and micro-hybrid energy recovery during engine restart cycles.

IC Role / Device Role / Timing Role: High-side main power switch controlling battery-to-starter circuit with precise timing coordination to avoid bus collapse.

Use Value: 1.73 mΩ R_DS(on) limits voltage drop to <120 mV at 70 A, preserving cold-cranking headroom while 175 °C rating sustains repeated pulse loads.

Use Scenario: Isolating auxiliary battery banks from main vehicle network during sleep mode or fault conditions.

IC Role / Device Role / Timing Role: Bidirectional isolation switch enabling automatic load shedding and fault containment per ISO 16750-2.

Use Value: 200 A chip-limited current supports peak surge currents up to 180 A for 100 µs, meeting ISO 7637-2 Pulse 5a requirements without derating.

Electric Power Steering (EPS) Inverter

Automotive DC-DC Converter (12 V → 5 V/3.3 V)

Use Scenario: Half-bridge switching in 3-phase EPS motor drive with space-constrained mechanical housing.

IC Role / Device Role / Timing Role: Low-side switching element in each phase leg, synchronized with gate driver for precise torque ripple control.

Use Value: 0.73 K/W R_thJC enables direct top-side heatsinking to EPS housing, eliminating need for thermal vias and reducing board layer count by one.

Use Scenario: Primary-side synchronous rectifier in high-efficiency buck converter powering ADAS sensors and infotainment.

IC Role / Device Role / Timing Role: Secondary-side power switch in synchronous rectification stage, driven with precise dead-time control.

Use Value: 24 ns t_rr and 8 nC Q_rr minimize reverse recovery losses, improving full-load efficiency by ≥1.2% vs. standard Si MOSFETs at 300 kHz switching.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IAUZ40N04S5L022ATMA1	R_DS(on) = 2.2 mΩ @ 10 V; lower Q_g (34 nC); same PG-LHDSO-10-1 package	Better suited for higher-frequency (>500 kHz), lower-current (<100 A) DC-DC where switching loss dominates	Select when prioritizing EMI reduction and gate drive simplicity over peak current capability.
IPB180N04S4H5ATMA1	R_DS(on) = 1.8 mΩ @ 10 V; TO-263-7 package; no top-side cooling; R_thJC = 1.2 K/W	Requires bottom-side heatsinking only; less suitable for ultra-thin modules with limited PCB thermal mass	Choose when legacy TO-263 layout reuse is required and top-side cooling infrastructure is unavailable.

Compared with IAUZ40N04S5L022ATMA1 and IPB180N04S4H5ATMA1, IAUCN04S6N017TATMA1 delivers the lowest conduction loss and highest thermal performance for high-current, space-constrained automotive power stages-especially where top-side cooling and 175 °C operation are mandatory.

Availability

IAUCN04S6N017TATMA1 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and battery management modules requiring stable component supply across multi-year automotive production programs.

Supply support for IAUCN04S6N017TATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

This part belongs to the OptiMOS™ 6 automotive power MOSFET product line, engineered specifically for high-efficiency, high-reliability 12 V and 48 V vehicle electrification systems demanding low R_DS(on), robust avalanche capability, and AEC-Q101 compliance.

FAQ

What is the maximum allowable gate-source voltage for IAUCN04S6N017TATMA1?

The absolute maximum gate-source voltage is ±20 V, with recommended operating range of 0–10 V for standard enhancement-mode drive. Exceeding 10 V does not reduce R_DS(on) significantly but increases gate oxide stress and leakage; gate drive circuits must clamp at 12 V to ensure long-term reliability under transients.

Does IAUCN04S6N017TATMA1 require a negative gate turn-off voltage?

No. This N-channel MOSFET operates reliably with 0 V gate turn-off due to its 2.2–3.0 V V_GS(th) range and low subthreshold conduction. Negative gate bias is unnecessary and not recommended, as it provides no immunity benefit and risks overstressing the gate oxide during fast transitions.

Can IAUCN04S6N017TATMA1 be used in paralleled configurations?

Yes-its positive temperature coefficient of R_DS(on) (increasing ~0.5%/°C) enables inherent current sharing. Successful paralleling requires matched gate drive loop inductance, symmetrical PCB layout, and Kelvin source connections. Up to four devices have been validated in production 12 V battery disconnect modules with <5% current imbalance at 400 A total.

Is the top-side drain pad electrically isolated from the package substrate?

No-the top-side drain pad is electrically and thermally connected directly to the internal die drain metallization. It must be mounted to an insulated heatsink or grounded metal chassis using electrically isolating thermal interface material (e.g., ceramic-filled silicone pads) to prevent short circuits in high-side configurations.

IAUCN04S6N017TATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 6

Package/Case:: 10-LSOP (0.216", 5.48mm Width) Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 58A (Ta), 120A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 7V, 10V

Rds On (Max) @ Id, Vgs:: 1.73mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:: 3V @ 40µA

Gate Charge (Qg) (Max) @ Vgs:: 49 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3250 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 103W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-LHDSO-10-1

IAUCN04S6N017TATMA1 FAQ

1.How can I place an order for IAUCN04S6N017TATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUCN04S6N017TATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IAUCN04S6N017TATMA1 reliable?

The price and inventory of IAUCN04S6N017TATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUCN04S6N017TATMA1 is usually 5 days.

3.What payment methods are accepted for IAUCN04S6N017TATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUCN04S6N017TATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IAUCN04S6N017TATMA1?

IAUCN04S6N017TATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUCN04S6N017TATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUCN04S6N017TATMA1?

For technical support, including IAUCN04S6N017TATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUCN04S6N017TATMA1 requirements.

6.How does Aetrix verify that IAUCN04S6N017TATMA1 is sourced from the original manufacturer or authorized distributors?

All IAUCN04S6N017TATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUCN04S6N017TATMA1 meets industry standards.

7.What is the process for return or replacement of IAUCN04S6N017TATMA1?

All IAUCN04S6N017TATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUCN04S6N017TATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUCN04S6N017TATMA1 part is unused and in its original packaging.

Return procedure for IAUCN04S6N017TATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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