Infineon Technologies IAUCN04S7L006ATMA1

Overview

IAUCN04S7L006ATMA1 from Infineon is an N-channel logic-level automotive power MOSFET in PG-TDSON-8-43 package, rated for 40 V V_DS, 0.60 mΩ R_DS(on) at V_GS = 10 V, and 380 A chip-limited continuous drain current. It operates up to 175 °C junction temperature, supports 100% single-pulse avalanche testing, and is qualified per AEC-Q101 with MSL1 reflow capability.

For engineers reviewing the IAUCN04S7L006ATMA1 datasheet, IAUCN04S7L006ATMA1 pinout, IAUCN04S7L006ATMA1 application, or IAUCN04S7L006ATMA1 equivalent, key selection criteria include its low R_DS(on) at 4.5 V gate drive, robust thermal performance (R_thJC = 0.46 K/W), and integrated body diode with 47 ns t_rr - critical for high-efficiency 12 V/48 V automotive power stages.

Technical Context

This OptiMOS™ 7 device uses trench-gate superjunction technology optimized for low conduction and switching losses in automotive DC-DC converters and motor control inverters. Its logic-level gate threshold (1.2–1.8 V) enables direct drive from microcontrollers without level-shifting, while the 0.91 K/W max R_thJC ensures efficient heat transfer to the PCB copper pad.

The MOSFET features enhanced electrical screening beyond AEC-Q101, including 100% avalanche energy validation (E_AS = 164 mJ at I_D = 85 A), and a reverse diode with Q_rr = 44–87 nC and V_SD = 0.8–0.95 V at 88 A - enabling fast freewheeling in synchronous rectification topologies.

Key Specifications

Pinout & Package

Package: PG-TDSON-8-43 - thermally enhanced 8-pin exposed-drain DSO-style leadless package with 4.3 mm × 3.3 mm footprint and 0.65 mm pitch; bottom-side thermal pad for direct PCB heat sinking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar automotive N-channel power MOSFET applications.

Compared with IAUZ40N04S5L027ATMA1 and IPB180N04S4-02, IAUCN04S7L006ATMA1 delivers optimal balance of low R_DS(on), fast switching, AEC-Q101 compliance, and compact PG-TDSON-8-43 packaging - making it preferred for space-constrained, high-frequency automotive power stages.

Availability

IAUCN04S7L006ATMA1 is available at Aetrix Electronics and suitable for electric power steering (EPS), onboard chargers (OBC), 48 V DC-DC converters, and battery disconnect switches requiring stable component supply across automotive production lifecycles.

Supply support for IAUCN04S7L006ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D infrastructure.

This part belongs to the OptiMOS™ 7 automotive power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 12 V and 48 V automotive subsystems - emphasizing low R_DS(on), fast switching, and extended temperature operation.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The datasheet specifies I_D = 49 A at T_C = 100 °C with V_GS = 10 V and R_thJA = 27 K/W on a 2s2p FR4 PCB. This reflects thermal limitation under standard board conditions - not the chip's intrinsic 380 A capability, which applies only when junction temperature is maintained ≤175 °C via optimized thermal design.

Does IAUCN04S7L006ATMA1 support 3.3 V logic-level gate drive?

Yes - its gate threshold voltage range is 1.2–1.8 V, and R_DS(on) is characterized down to V_GS = 4.5 V (0.72–0.84 mΩ). At 3.3 V, the device remains partially enhanced and usable in some low-duty-cycle applications, but full conduction requires ≥4.5 V drive for guaranteed 0.84 mΩ performance.

How is the avalanche rating validated?

Each unit undergoes 100% single-pulse avalanche testing per JEDEC JESD24-11, with I_AS = 85 A, V_DD = 40 V, and E_AS = 164 mJ. The test verifies ruggedness against inductive energy release during fault conditions, ensuring reliable operation without external clamping in automotive motor drives and DC-DC converters.

What is the recommended PCB layout for thermal performance?

Use a minimum 200 mm² exposed copper thermal pad (2-layer or 4-layer) connected to inner ground planes via ≥8 thermal vias (0.3 mm diameter, 0.6 mm pitch). The PG-TDSON-8-43 package requires solder mask defined pads per Infineon's AN2019-05, with stencil aperture 100% of pad size and 125 µm thickness for optimal void-free solder joint formation.