Infineon Technologies IAUCN04S7L009ATMA1
- Part No.:
- IAUCN04S7L009ATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
IAUCN04S7L009ATMA1.pdf
- Description:
- MOSFET_(20V 40V)
- Quantity:
- Payment:

- Shipping:

Inventory:828
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Product details
Overview
IAUCN04S7L009ATMA1 from Infineon is an N-channel logic-level automotive power MOSFET in PG-TDSON-8-34 package, rated for 40 V VDS, 0.91 mΩ RDS(on) at VGS = 10 V and 88 A, with 275 A chip-limited continuous drain current and 175 °C maximum operating temperature. It serves as a high-efficiency main or synchronous rectifier switch in 12 V/48 V automotive power distribution systems.
For engineers reviewing the IAUCN04S7L009ATMA1 datasheet, IAUCN04S7L009ATMA1 pinout, IAUCN04S7L009ATMA1 application, or IAUCN04S7L009ATMA1 equivalent, key selection criteria include its AEC-Q101 qualification, 100% single-pulse avalanche testing, MSL1 reflow compatibility up to 260 °C, and low RDS(on) enabling high-current DC-DC and motor drive stages in engine control units and battery management modules.
Technical Context
This OptiMOS™ 7 device uses trench-based silicon technology optimized for low conduction loss and fast switching in automotive 12 V systems. Its gate threshold voltage (1.2–1.8 V) ensures reliable logic-level drive from standard microcontrollers, while its 66–85 nC total gate charge supports efficient PWM operation at frequencies up to several hundred kHz.
The MOSFET integrates a robust body diode with 32–64 nC reverse recovery charge and 41–61 ns trr, enabling hard-switched synchronous rectification without external freewheeling diodes. Thermal resistance RthJC of 0.6–1.2 K/W allows direct heatsinking to PCB copper or metal-core substrates in space-constrained ECUs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage for 12 V automotive battery rail applications with load dump margin. |
| RDS(on) | 0.91 mΩ @ VGS=10 V, ID=88 A - Enables <1 W conduction loss at 100 A, critical for high-efficiency power stages. |
| ID (chip-limited) | 275 A - Peak current capability defined by die thermal limits, not package; requires proper PCB thermal design. |
| Tj max | +175 °C - Supports operation in under-hood environments including transmission control and ADAS power modules. |
| EAS | 129 mJ - Single-pulse avalanche energy rating confirms ruggedness against inductive switching transients. |
| Qg | 66–85 nC - Gate charge determines driver strength requirement; enables <100 ns switching transitions with 3.5 Ω gate resistor. |
| Ciss | 4388–5704 pF - Input capacitance impacts gate drive loop stability and EMI filter sizing in high-frequency converters. |
Pinout & Package
Package: PG-TDSON-8-34 - Thermally enhanced 8-pin exposed-drain DSO-style leadless package with 3.4 mm × 3.3 mm footprint and 0.65 mm pitch; top-side thermal pad for direct PCB heatsinking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 7, 8 | Drain (D) | Internally connected to large copper thermal pad; primary current path and heat extraction node. |
| 6 | Source (S) | Low-side reference point; connects to ground plane or current-sense resistor for feedback. |
| G | Gate (G) | Control terminal; requires low-inductance routing and RC snubber for dV/dt immunity in noisy automotive environments. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified beyond standard requirements | Extended reliability validation includes 1000 h HTOL at 175 °C and enhanced ESD testing per ISO 10605. |
| 100% single-pulse avalanche tested | Every unit verified to withstand 129 mJ transient energy without parametric shift or failure. |
| MSL1 rating up to 260 °C peak reflow | Compatible with standard lead-free SMT assembly processes without popcorn or delamination risk. |
| Logic-level gate drive (VGS(th) = 1.2–1.8 V) | Direct interface with 3.3 V/5 V MCU GPIOs; eliminates need for level-shifting or dedicated gate drivers. |
| Robust body diode with low Qrr | 32–64 nC reverse recovery charge reduces switching losses and EMI in synchronous buck topologies. |
Applications
| Engine Control Unit (ECU) Power Stage | 48 V Mild Hybrid DC-DC Converter |
|---|---|
Use Scenario: High-current 12 V supply switching for fuel injector drivers and ignition coils in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: Main power switch controlling pulsed load current up to 275 A with precise timing via MCU PWM. Use Value: Low RDS(on) minimizes I²R heating during extended cranking; 175 °C rating ensures stable operation near hot engine blocks. | Use Scenario: Primary-side synchronous rectifier in bi-directional 12 V ↔ 48 V DC-DC converters for mild hybrid vehicles. IC Role / Device Role / Timing Role: High-side or low-side switching element in phase-shifted full-bridge topology operating at 100–300 kHz. Use Value: Fast turn-off (tf = 19 ns) and low Coss reduce switching losses; avalanche ruggedness handles bus voltage spikes during regenerative braking. |
| Electric Power Steering (EPS) Motor Driver | Battery Management System (BMS) Precharge Circuit |
Use Scenario: Half-bridge leg in three-phase inverter supplying brushless DC motor in EPS module. IC Role / Device Role / Timing Role: Low-side switch handling 150 A peak motor phase current with dead-time controlled gate drive. Use Value: 0.91 mΩ RDS(on) keeps conduction loss below 2.3 W at 150 A, reducing heatsink size and improving torque response latency. | Use Scenario: Controlled precharge path between high-voltage traction battery and main contactor in 48 V BMS. IC Role / Device Role / Timing Role: Soft-start switch limiting inrush current during system wake-up or cold start. Use Value: 275 A current rating and 129 mJ EAS allow safe absorption of capacitor charging transients without derating or external clamping. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IAUCN04S7L012ATMA1 | RDS(on) = 1.2 mΩ @ VGS=10 V - higher on-resistance due to smaller die size. | Lower current capability (220 A chip-limited) suits compact EPS modules where thermal margin is constrained. | Select when board area or cost priority outweighs peak efficiency needs. |
| IPB120N04S7L02ATMA1 | PG-TO263-7 package - larger outline, higher RthJA (35 K/W), but same RDS(on) and voltage rating. | Suitable for legacy designs using through-hole or larger SMD footprints; less suitable for ultra-thin ECUs. | Choose for mechanical compatibility with existing TO-263 layouts or higher creepage requirements. |
Compared with IAUCN04S7L009ATMA1, the 012 variant trades 13% higher RDS(on) for reduced cost and footprint, while the TO-263 variant maintains identical electrical specs but sacrifices thermal performance and miniaturization-making the original optimal for next-gen high-power-density automotive modules.
Availability
IAUCN04S7L009ATMA1 is available at Aetrix Electronics and suitable for engine control units, 48 V mild hybrid converters, electric power steering inverters, and battery management precharge circuits requiring stable component supply across automotive production lifecycles.
Supply support for IAUCN04S7L009ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.
This part belongs to the OptiMOS™ 7 product line, engineered specifically for high-current, high-temperature automotive power conversion-emphasizing low RDS(on), avalanche ruggedness, and AEC-Q101 compliance for safety-critical subsystems.
FAQ
What is the maximum allowable gate-source voltage for IAUCN04S7L009ATMA1?
The absolute maximum VGS is ±16 V per datasheet Rev. 1.0. Operation above +10 V provides lowest RDS(on), but sustained bias beyond +12 V increases gate oxide stress and may accelerate wear-out in long-life automotive applications. Gate drive circuits must include clamping or zener protection to prevent overshoot during fast switching.
Does IAUCN04S7L009ATMA1 require a gate resistor, and what value is recommended?
Yes-a series gate resistor is required to control dI/dt and suppress ringing. For typical 100–300 kHz PWM in automotive DC-DC converters, a 3.5 Ω resistor (as used in datasheet test conditions) balances switching speed and EMI. Lower values (≤2 Ω) increase shoot-through risk; higher values (>10 Ω) degrade efficiency and thermal performance.
Can IAUCN04S7L009ATMA1 be used in parallel configurations?
Yes-its positive temperature coefficient of RDS(on) enables stable current sharing. Layout symmetry (matched trace lengths, thermal vias, and Kelvin source connections) is essential. Derate total current by 15% versus sum of individual ratings to account for thermal coupling and parameter spread across lots.
Is the PG-TDSON-8-34 package compatible with automated optical inspection (AOI)?
Yes-the package has coplanar leads and a flat thermal pad suitable for standard AOI systems. However, solder joint quality under the exposed drain pad requires X-ray inspection or cross-section verification, as voiding >25% can impair thermal performance and long-term reliability in under-hood applications.
IAUCN04S7L009ATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™ 7
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 275A (Tj)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 0.91mOhm @ 88A, 10V
- Vgs(th) (Max) @ Id:
- 1.8V @ 60µA
- Gate Charge (Qg) (Max) @ Vgs:
- 85 nC @ 10 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5704 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 129W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TDSON-8-34
IAUCN04S7L009ATMA1 FAQ
1.How can I place an order for IAUCN04S7L009ATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IAUCN04S7L009ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IAUCN04S7L009ATMA1 reliable?
The price and inventory of IAUCN04S7L009ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUCN04S7L009ATMA1 is usually 5 days.
3.What payment methods are accepted for IAUCN04S7L009ATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUCN04S7L009ATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IAUCN04S7L009ATMA1?
IAUCN04S7L009ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IAUCN04S7L009ATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IAUCN04S7L009ATMA1?
For technical support, including IAUCN04S7L009ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUCN04S7L009ATMA1 requirements.
6.How does Aetrix verify that IAUCN04S7L009ATMA1 is sourced from the original manufacturer or authorized distributors?
All IAUCN04S7L009ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUCN04S7L009ATMA1 meets industry standards.
7.What is the process for return or replacement of IAUCN04S7L009ATMA1?
All IAUCN04S7L009ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUCN04S7L009ATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IAUCN04S7L009ATMA1 part is unused and in its original packaging.
Return procedure for IAUCN04S7L009ATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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