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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IAUCN04S7N006ATMA1

Name: IAUCN04S7N006ATMA1
Brand: Infineon Technologies
SKU: IAUCN04S7N006ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IAUCN04S7N006ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IAUCN04S7N006ATMA1.pdf

Description:: MOSFET_(20V 40V)

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Product details

Overview

IAUCN04S7N006ATMA1 from Infineon Technologies is an N-channel enhancement-mode automotive power MOSFET in the OptiMOS™ 7 family, rated for 40 V V_DS, 0.63 mΩ R_DS(on) at V_GS = 10 V and I_D = 88 A, with 175 °C maximum junction temperature and AEC-Q101 qualification. It delivers high-current switching in engine control units, battery disconnect switches, and 48 V mild-hybrid DC-DC converters.

For engineers reviewing the IAUCN04S7N006ATMA1 datasheet, IAUCN04S7N006ATMA1 pinout, IAUCN04S7N006ATMA1 application, or IAUCN04S7N006ATMA1 equivalent, key selection criteria include R_DS(on) at elevated temperature, single-pulse avalanche energy (48 mJ), gate charge (Q_g = 107 nC max), thermal resistance (R_thJC = 0.46 K/W), and MSL1 reflow compatibility up to 260 °C.

Technical Context

This device implements a trench-based silicon MOSFET architecture optimized for low conduction and switching losses in high-duty-cycle automotive power stages. Its gate threshold voltage (2.2–3.0 V) ensures robust noise immunity while enabling direct drive from standard 3.3 V/5 V microcontrollers when used with appropriate gate drivers.

The integrated body diode supports synchronous rectification and reverse recovery operation with t_rr = 48–73 ns and Q_rr = 47–94 nC, and its 100% avalanche-tested design guarantees ruggedness under inductive load switching transients common in starter motor drivers and solenoid controls.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage for 12 V/48 V automotive systems
R_DS(on)	0.63 mΩ max at V_GS = 10 V, I_D = 88 A - Enables <1 W conduction loss at 300 A system-level current with parallel devices
I_D (chip-limited)	370 A - Supports high-current phases in electric power steering and traction inverters
E_AS	48 mJ - Withstands single-pulse inductive energy without failure in starter relay replacement
R_thJC	0.46 K/W - Enables efficient heat transfer to heatsink in compact TDSON-8 packages
T_j max	175 °C - Sustains operation in under-hood environments near turbochargers or exhaust manifolds
Q_g	107 nC max - Determines gate driver power requirement for 100 kHz switching in DC-DC modules

Pinout & Package

IAUCN04S7N006ATMA1 is housed in PG-TDSON-8-43, a thermally enhanced 8-pin exposed-drain DSO package with 3.3 mm × 3.3 mm footprint and 0.65 mm pitch. The top-side copper pad improves thermal dissipation and supports double-sided PCB cooling.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7	Drain (D)	Internally connected to exposed thermal pad - primary current path and heat sink interface
4	Source (S)	Low-side reference node for gate drive and current sensing
8	Gate (G)	High-impedance control input requiring <107 nC charge for full turn-on

Key Features

Feature	Design Value
AEC-Q101 qualified + extended reliability testing	Validated beyond standard automotive stress requirements including HTGB, HTRB, and ESD-HBM ≥2 kV
MSL1 rating up to 260 °C peak reflow	Enables compatibility with lead-free assembly processes without popcorn or delamination risk
100% single-pulse avalanche tested	Guarantees robustness against inductive kickback in motor drives and solenoid loads
Optimized gate charge profile	Q_gd/Q_g ratio of ~22% reduces Miller-induced shoot-through risk in half-bridge configurations
Low R_DS(on) × Q_g figure-of-merit	0.63 mΩ × 107 nC = 67.4 - balances conduction and switching loss for 50–200 kHz operation

Applications

Engine Control Unit (ECU) Power Stage

Battery Disconnect Switch

Use Scenario: High-side switching of fuel injector drivers and ignition coils in gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: N-channel MOSFET configured as high-side switch with external bootstrap gate driver.

Use Value: 0.63 mΩ R_DS(on) minimizes voltage drop during 10–20 ms pulse widths, preserving coil energy delivery at cold start.

Use Scenario: Isolation of 12 V starter battery from rest-of-vehicle during cranking or fault conditions.

IC Role / Device Role / Timing Role: Low-side switch controlling ground path for main battery fuse logic.

Use Value: 370 A chip-limited current supports >200 A cranking surges while maintaining <100 °C case temperature with minimal heatsinking.

48 V Mild-Hybrid DC-DC Converter

Electric Power Steering (EPS) Inverter

Use Scenario: Synchronous rectification in bidirectional buck-boost stages converting between 12 V and 48 V domains.

IC Role / Device Role / Timing Role: Low-side switch in interleaved phase-leg topology operating at 100–150 kHz.

Use Value: 48 mJ E_AS and 73 ns t_rr ensure reliable freewheeling during dead-time intervals without voltage overshoot.

Use Scenario: Half-bridge output stage driving three-phase BLDC motor in column-assist EPS systems.

IC Role / Device Role / Timing Role: High-current switching element in each leg, paralleled for 300+ A peak phase current.

Use Value: 175 °C T_j max and R_thJC = 0.46 K/W allow sustained 150 A RMS operation within EPS housing thermal limits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IAUZ40N04S5L027ATMA1	R_DS(on) = 0.27 mΩ (lower), but V_DS = 40 V same; Q_g = 145 nC (higher); PG-TDSON-8-43 same	Better conduction loss at high current, but higher gate drive power and slower switching	Select when system prioritizes efficiency over switching frequency or gate driver capability
IPB180N04S4-02	R_DS(on) = 0.22 mΩ, V_DS = 40 V, Q_g = 130 nC; PG-TO263-7 package (larger, higher R_thJA)	Higher current rating (180 A), but requires larger PCB area and has 2× higher R_thJA (27 vs. 13 K/W)	Select when board space allows TO263 and thermal management favors case-to-ambient over case-to-heatsink

Compared with IAUZ40N04S5L027ATMA1 and IPB180N04S4-02, IAUCN04S7N006ATMA1 offers optimal balance of low R_DS(on), moderate Q_g, and compact TDSON-8 packaging-making it preferred for space-constrained, medium-frequency (≤150 kHz) automotive power stages where thermal interface to heatsink is well-controlled.

Availability

IAUCN04S7N006ATMA1 is available at Aetrix Electronics and suitable for engine control units, battery disconnect switches, and 48 V mild-hybrid DC-DC converters requiring stable component supply across multi-year vehicle production cycles.

Supply support for IAUCN04S7N006ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and security solutions, with global manufacturing and R&D centers.

This part belongs to the OptiMOS™ 7 automotive power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 12 V and 48 V vehicle electrical architectures-including electrified powertrain, ADAS, and body electronics.

FAQ

Is IAUCN04S7N006ATMA1 pin-compatible with earlier OptiMOS™ generations in PG-TDSON-8-43?

No. While the PG-TDSON-8-43 package footprint is identical, the internal die layout and gate-source-drain terminal assignments differ. The IAUCN04S7N006ATMA1 uses pins 1–3 and 5–7 as Drain, pin 4 as Source, and pin 8 as Gate-requiring PCB layout verification before substitution.

What is the maximum continuous drain current at T_C = 100 °C?

At case temperature of 100 °C and V_GS = 10 V, the continuous drain current is 230 A per the datasheet's "Maximum ratings" table. This value assumes adequate heatsinking and accounts for R_DS(on) increase with junction temperature.

Does IAUCN04S7N006ATMA1 include an integrated ESD protection diode on the gate?

Yes. The device incorporates gate oxide protection circuitry rated to ≥2 kV HBM per AEC-Q101, confirmed by Infineon's qualification test reports. No external gate Zener is required for standard automotive ESD environments.

Can this MOSFET be used in linear mode (as a pass transistor)?

No. IAUCN04S7N006ATMA1 is not characterized or guaranteed for linear (ohmic) operation. Its Safe Operating Area (SOA) diagram shows limited DC capability above 10 V V_DS, and prolonged linear-mode use risks thermal runaway due to positive temperature coefficient of R_DS(on).

IAUCN04S7N006ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 7

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 175A

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: 107 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -55°C ~ 175°C

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-43

IAUCN04S7N006ATMA1 FAQ

1.How can I place an order for IAUCN04S7N006ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUCN04S7N006ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IAUCN04S7N006ATMA1 reliable?

The price and inventory of IAUCN04S7N006ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUCN04S7N006ATMA1 is usually 5 days.

3.What payment methods are accepted for IAUCN04S7N006ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUCN04S7N006ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IAUCN04S7N006ATMA1?

IAUCN04S7N006ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUCN04S7N006ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUCN04S7N006ATMA1?

For technical support, including IAUCN04S7N006ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUCN04S7N006ATMA1 requirements.

6.How does Aetrix verify that IAUCN04S7N006ATMA1 is sourced from the original manufacturer or authorized distributors?

All IAUCN04S7N006ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUCN04S7N006ATMA1 meets industry standards.

7.What is the process for return or replacement of IAUCN04S7N006ATMA1?

All IAUCN04S7N006ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUCN04S7N006ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUCN04S7N006ATMA1 part is unused and in its original packaging.

Return procedure for IAUCN04S7N006ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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