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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IAUCN04S7N015ATMA1

Name: IAUCN04S7N015ATMA1
Brand: Infineon Technologies
SKU: IAUCN04S7N015ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IAUCN04S7N015ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IAUCN04S7N015ATMA1.pdf

Description:: MOSFET_(20V 40V)

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IAUCN04S7N015 from Infineon is an N-channel enhancement-mode automotive power MOSFET in the OptiMOS™ 7 family, rated for 40 V V_DS, 1.53 mΩ R_DS(on) at V_GS = 10 V and I_D = 60 A, with 173 A chip-limited continuous drain current and 175 °C maximum operating temperature. It serves as a high-efficiency main or synchronous rectifier switch in 12 V automotive power systems including DC-DC converters and motor drivers.

For engineers reviewing the IAUCN04S7N015 datasheet, IAUCN04S7N015 pinout, IAUCN04S7N015 application, or IAUCN04S7N015 equivalent, key selection criteria include its AEC-Q101 qualification, MSL1 reflow rating up to 260 °C, 100% single-pulse avalanche testing, low gate charge (Q_g = 31–41 nC), and robust thermal performance (R_thJC = 0.9–1.7 K/W).

Technical Context

This device implements a trench-based silicon MOSFET architecture optimized for low conduction and switching losses in 12 V automotive battery-fed systems. Its 1.53 mΩ R_DS(on) enables high-current operation with minimal I²R loss, while Q_gd = 6–10 nC and t_r/t_f = 3/7 ns support fast, efficient hard-switching in buck and half-bridge topologies.

The integrated body diode features V_SD = 0.8–0.95 V at 60 A and t_rr = 27–40 ns, enabling reliable freewheeling in synchronous rectification. Thermal design is supported by a low junction-to-case resistance (0.9–1.7 K/W) and extended 175 °C operation, critical for under-hood environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V automotive battery systems with transient overvoltage margin.
R_DS(on)	1.53 mΩ @ V_GS = 10 V, I_D = 60 A - Enables <1.5 W conduction loss at 60 A, reducing heatsink requirements.
I_D (chip-limited)	173 A - Supports high peak current demands in starter motors, EPS, and DC-DC phases without derating.
Q_g	31–41 nC - Low total gate charge minimizes driver power and enables efficient 100+ kHz switching in compact converters.
T_j(max)	175 °C - Rated for sustained operation in engine bay locations with no thermal shutdown under full load.
E_AS	88 mJ - 100% tested single-pulse avalanche energy ensures reliability during inductive load turn-off transients.
R_thJC	0.9–1.7 K/W - Enables direct thermal coupling to heatsinks or PCB copper, supporting >100 W power dissipation at T_C = 100 °C.

Pinout & Package

Package: PG-TDSON-8-34 - Thermally enhanced 8-pin exposed-pad surface-mount package with optimized copper clip construction for low R_thJC and high current handling.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7	Drain (internally connected)	All seven pins are electrically tied to the drain terminal and thermally coupled to the exposed pad for optimal heat transfer.
8	Source	Primary source connection; used for current return path and gate drive reference in low-side configurations.
Exposed Pad	Drain / Thermal Interface	Electrically and thermally connected to drain; must be soldered to large PCB copper area for thermal management.

Key Features

Feature	Design Value
AEC-Q101 qualified + extended electrical test coverage	Validated beyond standard automotive stress tests, including enhanced HTGB and HTRB, ensuring long-term reliability in safety-critical modules.
MSL1 rating up to 260 °C peak reflow	Compatible with standard lead-free SMT assembly processes without moisture sensitivity concerns or pre-bake requirements.
100% single-pulse avalanche tested	Each unit verified for E_AS ≥ 88 mJ, eliminating field failures due to inductive switching energy absorption.
Optimized gate charge profile (Q_gd/Q_gs = ~0.7)	Reduces Miller-induced shoot-through risk and improves controllability in high-speed synchronous rectifiers.
Low reverse recovery charge (Q_rr = 12–24 nC)	Minimizes switching loss and EMI in freewheeling operation, especially in high-frequency buck converters.

Applications

Engine Control Unit (ECU) Power Stage

Automotive DC-DC Converter

Use Scenario: High-current 12 V to 5 V/3.3 V conversion for microcontroller and sensor rails in engine control units.

IC Role / Device Role / Timing Role: Primary synchronous rectifier MOSFET in buck converter output stage, operating at 300–500 kHz.

Use Value: 1.53 mΩ R_DS(on) reduces conduction loss by >35% vs. legacy 2.5 mΩ devices, enabling higher efficiency at 60–100 A loads.

Use Scenario: 48 V to 12 V bidirectional DC-DC conversion in mild hybrid vehicles.

IC Role / Device Role / Timing Role: Low-side switch in interleaved buck-boost phase leg, handling 120 A peak current per phase.

Use Value: 173 A chip-limited current and 175 °C rating allow sustained operation without thermal throttling during acceleration transients.

Electric Power Steering (EPS) Motor Driver

Automotive LED Headlamp Driver

Use Scenario: Three-phase inverter for brushless DC motor in column-assist EPS systems.

IC Role / Device Role / Timing Role: High-side and low-side switch in each half-bridge, driven with 10–20 ns dead time.

Use Value: Fast t_r/t_f (3/7 ns) and low Q_gd enable precise timing control and reduced switching loss at 20 kHz PWM frequency.

Use Scenario: Constant-current switching regulator for adaptive front lighting systems (AFS) with dynamic beam shaping.

IC Role / Device Role / Timing Role: Main pass element in high-side configured LED current sink, modulated at 1–5 kHz.

Use Value: Robust 100% avalanche testing ensures immunity to inductive kickback from long LED string wiring harnesses.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IAUCN04S7N017ATMA1	R_DS(on) = 1.75 mΩ (typ.) at V_GS = 10 V - 14% higher on-resistance than IAUCN04S7N015.	Lower current capability (I_D = 160 A chip-limited) - suitable for cost-sensitive 80–120 A designs where 10–15% efficiency loss is acceptable.	Select when thermal margin exists and BOM cost reduction is prioritized over peak efficiency.
IPB180N04S4H5ATMA1	Same 40 V rating but higher R_DS(on) = 1.8 mΩ and lower Q_g = 27 nC - trade-off favors switching over conduction loss.	Designed for high-frequency (>1 MHz) resonant converters - less suited for high-current DC-DC where conduction dominates loss.	Prefer for LLC or ZVS topologies requiring ultra-low gate drive loss, not for high-I_D buck stages.

Compared with IAUCN04S7N017ATMA1 and IPB180N04S4H5ATMA1, the IAUCN04S7N015 delivers the lowest R_DS(on) and highest current rating in Infineon's 40 V OptiMOS™ 7 portfolio, making it optimal for thermally constrained, high-power automotive applications where conduction loss dominates system efficiency.

Availability

IAUCN04S7N015 is available at Aetrix Electronics and suitable for automotive power conversion, electric power steering, and engine control unit (ECU) applications requiring stable component supply, AEC-Q101 compliance, and long-term lifecycle assurance.

Supply support for IAUCN04S7N015 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This part belongs to the OptiMOS™ 7 automotive power MOSFET product line, engineered specifically for high-current, high-temperature 12 V and 48 V vehicle electrical systems demanding best-in-class R_DS(on), avalanche ruggedness, and AEC-Q101 reliability.

FAQ

What is the maximum allowable gate-source voltage for IAUCN04S7N015?

The absolute maximum V_GS is ±20 V, with typical gate drive operating between 4.3 V (plateau) and 10 V. Exceeding ±20 V risks permanent gate oxide damage. Gate drive circuits must include clamping or limiting to stay within this range, especially during fast transients or hot-plug events.

Does IAUCN04S7N015 require external gate resistors in automotive applications?

Yes - a series gate resistor (typically 2–10 Ω) is required to control dV/dt, suppress ringing, and limit peak gate current. The device's low R_G (1.8 Ω typ.) and Q_g of 31–41 nC make it sensitive to uncontrolled turn-on; proper gate resistance ensures stable switching and EMI compliance per CISPR 25 Class 5.

How is the 173 A continuous drain current rating determined?

This value is chip-limited and defined under ideal thermal conditions (T_C = 25 °C, V_GS = 10 V), not PCB-limited. Real-world current depends on PCB layout, heatsinking, and ambient temperature; at T_C = 100 °C, the rated continuous current drops to 90 A per datasheet derating curves.

Can IAUCN04S7N015 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (increases with T_j) enables inherent current sharing. Successful paralleling requires matched gate drive paths, symmetrical PCB layout, and shared source inductance minimization; typical designs use 2–4 devices per phase in high-power EPS inverters.

IAUCN04S7N015ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 7

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 120A

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -55°C ~ 175°C

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-34

IAUCN04S7N015ATMA1 FAQ

1.How can I place an order for IAUCN04S7N015ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUCN04S7N015ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IAUCN04S7N015ATMA1 reliable?

The price and inventory of IAUCN04S7N015ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUCN04S7N015ATMA1 is usually 5 days.

3.What payment methods are accepted for IAUCN04S7N015ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUCN04S7N015ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IAUCN04S7N015ATMA1?

IAUCN04S7N015ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUCN04S7N015ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUCN04S7N015ATMA1?

For technical support, including IAUCN04S7N015ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUCN04S7N015ATMA1 requirements.

6.How does Aetrix verify that IAUCN04S7N015ATMA1 is sourced from the original manufacturer or authorized distributors?

All IAUCN04S7N015ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUCN04S7N015ATMA1 meets industry standards.

7.What is the process for return or replacement of IAUCN04S7N015ATMA1?

All IAUCN04S7N015ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUCN04S7N015ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUCN04S7N015ATMA1 part is unused and in its original packaging.

Return procedure for IAUCN04S7N015ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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