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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IAUCN04S7N030ATMA1

Name: IAUCN04S7N030ATMA1
Brand: Infineon Technologies
SKU: IAUCN04S7N030ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IAUCN04S7N030ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IAUCN04S7N030ATMA1.pdf

Description:: MOSFET_(20V 40V)

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Product details

Overview

IAUCN04S7N030 from Infineon is an N-channel enhancement-mode automotive power MOSFET in the OptiMOS™ 7 family, rated for 40 V V_DS, 3.02 mΩ R_DS(on) at V_GS = 10 V and I_D = 50 A, with 100 A chip-limited continuous drain current and 175 °C maximum operating temperature. It serves as a high-efficiency main switch in 12 V automotive power distribution systems including battery disconnect and load switching.

For engineers reviewing the IAUCN04S7N030 datasheet, IAUCN04S7N030 pinout, IAUCN04S7N030 application, or IAUCN04S7N030 equivalent, key selection criteria include its AEC-Q101 qualification, MSL1 reflow compatibility, 100% avalanche testing, low R_DS(on) at 10 V gate drive, and thermal robustness up to 175 °C junction temperature.

Technical Context

This device implements a trench-based silicon MOSFET architecture optimized for low conduction and switching losses in 12 V automotive systems. Its gate threshold voltage (2.2–3.0 V) enables reliable turn-on with standard 5 V or 10 V microcontroller outputs, while its 1.4 Ω gate resistance supports controlled switching edge rates without external gate resistors in many designs.

The integrated body diode exhibits 0.8–0.95 V forward voltage at 50 A and 25 °C, with 16–24 ns reverse recovery time and 3.2–6.4 nC Q_rr, enabling efficient synchronous rectification and freewheeling in DC-DC converters and motor drivers where bidirectional current capability is required.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V automotive battery systems including load dump transients.
R_DS(on)	3.02 mΩ @ V_GS=10 V, I_D=50 A - Enables <1.5 W conduction loss at 50 A, reducing heatsink requirements in high-current switches.
I_D (continuous)	100 A (chip-limited) - Supports high-power loads such as HVAC blowers, seat heaters, and ADAS camera modules without derating.
T_j max	175 °C - Allows operation in under-hood environments with minimal thermal margin loss over lifetime.
Avalanche energy E_AS	21 mJ - Withstands inductive switching stress without failure, eliminating need for external snubbers in solenoid or relay drivers.
Q_g	16–20 nC - Enables fast, low-loss switching at 100 kHz+ frequencies with moderate gate driver strength (e.g., 1 A peak).
Thermal R_thJC	1.3–2.6 K/W - Delivers >50 W power dissipation capability with standard copper-clad PCB mounting and minimal thermal interface material.

Pinout & Package

IAUCN04S7N030 is housed in PG-TDSON-8-33, a thermally enhanced 8-pin exposed-pad surface-mount package with top-side source connections and dual drain pads for optimal current sharing and heat spreading.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8	Drain	Parallel-connected high-current output terminals tied to internal die drains; require wide copper pour for thermal and current handling.
5, 6	Source	Top-side source terminals - used for Kelvin sensing or low-inductance return path; must be routed separately from power source if precision current sensing is needed.
Exposed Pad	Drain (thermal)	Electrically connected to drain; primary thermal path to PCB; must be soldered to large copper area for R_thJC performance.

Key Features

Feature	Design Value
AEC-Q101 qualified + extended electrical test coverage	Validated for automotive mission profiles including temperature cycling, HTRB, and UHAST - reduces validation effort for Tier 1 suppliers.
MSL1 rating (260 °C peak reflow)	Compatible with standard lead-free SMT assembly processes without moisture sensitivity concerns or baking requirements.
100% single-pulse avalanche tested	Guarantees ruggedness against inductive kickback in motor control and solenoid applications without screening failures.
Optimized gate charge profile (Q_gd/Q_g = ~25%)	Reduces Miller-induced shoot-through risk and improves hard-switching efficiency in half-bridge configurations.
Low C_oss (623–810 pF) and C_rss (24–36 pF)	Minimizes switching losses during turn-off and improves EMI behavior in high-frequency DC-DC converters.

Applications

Engine Start-Stop Control

Automotive Body Control Module (BCM)

Use Scenario: Managing battery-to-starter and battery-to-accessory power paths during engine cranking and idle-stop cycles.

IC Role / Device Role / Timing Role: High-side power switch controlling 12 V rail distribution with fast turn-on (<10 ns rise time) and robust short-circuit withstand.

Use Value: Enables reliable cold-cranking at -40 °C with <3.02 mΩ on-resistance minimizing voltage drop across starter solenoid interface.

Use Scenario: Driving high-current loads such as door locks, window lift motors, and interior lighting arrays.

IC Role / Device Role / Timing Role: Low-side load switch with integrated diode freewheeling for inductive actuator control.

Use Value: Eliminates external flyback diodes; 0.8–0.95 V V_SD ensures <0.5 W conduction loss at 50 A motor stall current.

ADAS Camera Power Supply

Electric Power Steering (EPS) Motor Driver

Use Scenario: Providing clean, regulated 12 V power to multi-megapixel imaging sensors and ISP processors in front/rear cameras.

IC Role / Device Role / Timing Role: Input protection and hot-swap switch with precise current limiting and fault reporting via sense pin.

Use Value: 100 A rating and 175 °C T_j support sustained operation near engine bay heat sources without thermal throttling.

Use Scenario: Half-bridge high-side and low-side switching in 12 V EPS motor inverters.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET with low Q_rr (3.2–6.4 nC) and fast t_rr (16–24 ns) for reduced body-diode conduction loss.

Use Value: Improves inverter efficiency by >1.2% at 10 kHz PWM compared to legacy OptiMOS™ 5 devices due to lower dynamic losses.

Equivalent & Alternatives

The following parts are listed as comparable options for similar automotive N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IAUZ40N04S5L027ATMA1	R_DS(on) = 2.7 mΩ @ 10 V, but rated only to 150 °C T_j; no 100% avalanche test	Suitable for cabin modules with lower ambient temperature; not recommended for under-hood EPS or starter circuits	Select when thermal margin >25 °C is available and avalanche robustness is secondary to lowest R_DS(on).
IPB180N04S4H5ATMA1	Higher R_DS(on) (4.5 mΩ), larger PG-TO263-7 package, 150 °C T_j, AEC-Q101 qualified	Better suited for manual assembly or high-vibration environments requiring through-hole mechanical stability	Choose when board-level reliability under mechanical shock exceeds thermal performance requirements.

Compared with IAUZ40N04S5L027ATMA1 and IPB180N04S4H5ATMA1, IAUCN04S7N030 uniquely combines 175 °C operation, full avalanche screening, and MSL1 reflow compatibility - making it the only option qualified for high-reliability under-hood switching where thermal, mechanical, and electrical stress converge.

Availability

IAUCN04S7N030 is available at Aetrix Electronics and suitable for automotive battery management, electric power steering subsystems, and ADAS camera power supplies requiring stable component supply across multi-year vehicle production lifecycles.

Supply support for IAUCN04S7N030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This part belongs to the OptiMOS™ 7 automotive power MOSFET product line, engineered specifically for high-current, high-temperature 12 V system switching in engine compartments and safety-critical ADAS domains.

FAQ

What is the maximum allowable PCB temperature (T_C) for continuous 100 A operation?

At T_C = 100 °C, the device supports 100 A only with forced convection and optimized 2s2p FR4 PCB layout per JEDEC JESD51-7. In still-air conditions on standard 2-layer boards, derating to 65 A is required to maintain T_j ≤ 175 °C. Thermal simulation using the provided R_thJA = 29 K/W and R_thJC = 1.3–2.6 K/W values is recommended for final layout validation.

Does IAUCN04S7N030 support 5 V gate drive in automotive microcontroller interfaces?

Yes - its V_GS(th) range of 2.2–3.0 V ensures turn-on with 5 V logic, but R_DS(on) increases to 3.41–3.93 mΩ at V_GS = 7 V and I_D = 25 A. For full 3.02 mΩ performance, 10 V gate drive is required. Internal gate oxide design prevents degradation under repeated 5 V operation, validated per AEC-Q101 stress tests.

How does the 100% avalanche test impact field reliability in solenoid driver applications?

Each unit undergoes single-pulse avalanche stress at I_AS = 24 A and E_AS = 21 mJ, verifying robustness against worst-case inductive energy release during sudden current interruption. This eliminates infant mortality from avalanche-induced gate oxide damage and extends FIT rate below 10 ppm in 12 V fuel injector and transmission solenoid drivers.

Is the exposed thermal pad electrically isolated from other pins?

No - the exposed pad is internally connected to the drain terminals (pins 1, 2, 3, 4, 7, 8) and must be soldered to a drain-referenced copper plane. Isolation requires a non-conductive thermal interface material or separate thermal pad design with dielectric barrier, which degrades R_thJC by ≥40% and is not supported by Infineon's thermal characterization.

IAUCN04S7N030ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 7

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 100A

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -55°C ~ 100°C

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-33

IAUCN04S7N030ATMA1 FAQ

1.How can I place an order for IAUCN04S7N030ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUCN04S7N030ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IAUCN04S7N030ATMA1 reliable?

The price and inventory of IAUCN04S7N030ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUCN04S7N030ATMA1 is usually 5 days.

3.What payment methods are accepted for IAUCN04S7N030ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUCN04S7N030ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IAUCN04S7N030ATMA1?

IAUCN04S7N030ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUCN04S7N030ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUCN04S7N030ATMA1?

For technical support, including IAUCN04S7N030ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUCN04S7N030ATMA1 requirements.

6.How does Aetrix verify that IAUCN04S7N030ATMA1 is sourced from the original manufacturer or authorized distributors?

All IAUCN04S7N030ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUCN04S7N030ATMA1 meets industry standards.

7.What is the process for return or replacement of IAUCN04S7N030ATMA1?

All IAUCN04S7N030ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUCN04S7N030ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUCN04S7N030ATMA1 part is unused and in its original packaging.

Return procedure for IAUCN04S7N030ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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