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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IAUCN08S7N019ATMA1

Name: IAUCN08S7N019ATMA1
Brand: Infineon Technologies
SKU: IAUCN08S7N019ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IAUCN08S7N019ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IAUCN08S7N019ATMA1.pdf

Description:: MOSFET_(75V 120V(

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Product details

Overview

IAUCN08S7N019 from Infineon is an N-channel enhancement-mode automotive power MOSFET in PG-TDSON-8-43 package, rated for 80 V V_DS, 1.9 mΩ R_DS(on) at V_GS = 10 V, and 200 A chip-limited continuous drain current. It operates up to 175°C, passes 100% single-pulse avalanche testing, and supports high-current motor control and DC-DC conversion in engine management and battery systems.

For engineers reviewing the IAUCN08S7N019 datasheet, IAUCN08S7N019 pinout, IAUCN08S7N019 application, or IAUCN08S7N019 equivalent, key selection criteria include its AEC-Q101 qualification, MSL1 reflow compatibility, low R_DS(on) at high temperature, robust avalanche energy (131 mJ), and integrated freewheeling diode performance (V_SD = 0.9–1.0 V).

Technical Context

This OptiMOS™ 7 device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V/48 V automotive power stages. Its gate threshold voltage (2.3–3.2 V) ensures reliable turn-on with standard 5 V or 10 V logic drivers, while the 4.4 V gate plateau voltage enables stable Miller region control during hard-switching.

The MOSFET integrates a fast-recovery body diode (t_rr = 40–60 ns, Q_rr = 27–54 nC) and exhibits low dynamic capacitances (C_iss = 4331–5630 pF, C_rss = 22–33 pF), supporting high-frequency synchronous rectification and PWM-based traction inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage for 12 V/48 V automotive battery rail protection and motor drive half-bridges
R_DS(on)	1.9 mΩ max @ V_GS = 10 V - Enables ≤200 A continuous conduction with <1.5 W conduction loss at 100 A
I_D (chip-limited)	200 A - Supports high-power starter-alternator and electric power steering modules without external current sharing
E_AS	131 mJ - Withstands inductive energy dump from 63 A loads without failure, critical for solenoid and pump driver reliability
T_j max	+175 °C - Sustains operation under hood temperatures in turbocharged engine compartments
Q_g	63–81.9 nC - Determines gate drive power requirement for 100 kHz switching in DC-DC converters
t_rr	40–60 ns - Limits reverse recovery loss and EMI in synchronous buck topologies

Pinout & Package

PG-TDSON-8-43 is a thermally enhanced 8-pin exposed-pad surface-mount package with dual-source/drain configuration for parallel current paths and low-inductance layout. The exposed thermal pad (pin 8) must be soldered to a large copper pour for optimal junction-to-case thermal resistance (R_thJC = 0.89 K/W).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6	Source	Multiple low-inductance source terminals reduce common-source inductance and improve switching stability
7	Gate	Single gate input with 1.3 Ω typical gate resistance; requires <82 nC total charge for full enhancement
8	Drain / Thermal Pad	Exposed drain-connected copper pad for direct PCB heat sinking; primary thermal path to ambient

Key Features

Feature	Design Value
AEC-Q101 qualified + extended electrical test coverage	Validated beyond standard stress tests for automotive safety-critical power stages
100% single-pulse avalanche tested	Guarantees ruggedness against inductive kickback in motor and solenoid loads
MSL1 rating (260°C peak reflow)	Enables compatibility with lead-free assembly processes without delamination risk
Integrated fast body diode (t_rr ≤ 60 ns)	Reduces need for external anti-parallel diodes in H-bridge and synchronous rectifier designs
R_DS(on) stable over -55°C to +175°C	Maintains low conduction loss across full automotive temperature range

Applications

Engine Control Unit (ECU) Power Stage

Electric Power Steering (EPS) Motor Driver

Use Scenario: High-side switch for fuel injector and ignition coil drivers in gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: Power MOSFET providing precise 80 V, 200 A pulsed current with sub-20 ns turn-on delay for timing-critical combustion events.

Use Value: Avalanche ruggedness (131 mJ) prevents failure during coil flyback; low R_DS(on) minimizes thermal derating in compact ECU housings.

Use Scenario: Half-bridge leg in 12 V EPS motor inverter delivering >10 kW peak torque assist.

IC Role / Device Role / Timing Role: Low-loss switching element enabling >97% efficiency at 20 kHz PWM with minimal heatsink volume.

Use Value: Fast t_rr and low Q_gd suppress shoot-through risk; 175°C rating sustains operation during parking-assist duty cycles.

48 V Mild Hybrid DC-DC Converter

On-Board Charger (OBC) Input Stage

Use Scenario: Primary-side synchronous rectifier in bidirectional 48 V–12 V buck-boost converter for regenerative braking energy transfer.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) switch operating at 100–200 kHz with tight dead-time control.

Use Value: 1.9 mΩ R_DS(on) reduces conduction loss by >30% vs. prior-gen 80 V MOSFETs; C_rss < 33 pF improves EMI margin.

Use Scenario: AC input bridge and PFC switch in 3.3 kW OBC front-end for BEVs.

IC Role / Device Role / Timing Role: 80 V-rated power switch handling high di/dt during boost-phase transitions.

Use Value: Robust body diode (Q_rr = 27–54 nC) lowers reverse recovery loss; 200 A rating supports scalable multi-phase PFC designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 80 V automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N8F7AG	R_DS(on) = 2.2 mΩ @ 10 V; T_j max = 175°C; same PG-TDSON-8 package	Slightly higher conduction loss; identical thermal footprint and pinout	Preferred when cost sensitivity outweighs 0.3 mΩ R_DS(on) advantage
ON Semiconductor NTMFS5C673NL	R_DS(on) = 2.0 mΩ @ 10 V; AEC-Q101 qualified; different SO-8FL package (no exposed drain pad)	Higher R_thJA (35 K/W vs. 25.9 K/W); lower peak current capability (160 A)	Selected where board space constraints favor smaller outline over thermal performance

Compared with STL220N8F7AG and NTMFS5C673NL, IAUCN08S7N019 delivers lowest R_DS(on) and best thermal resistance, making it optimal for high-power density automotive inverters where junction temperature margin and avalanche immunity are design-critical.

Availability

IAUCN08S7N019 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and 48 V mild hybrid DC-DC converters requiring stable component supply across long automotive production lifecycles.

Supply support for IAUCN08S7N019 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power electronics, automotive microcontrollers, and security ICs, with global manufacturing and R&D centers.

The OptiMOS™ 7 product line targets high-efficiency, high-reliability automotive power conversion-designed specifically for 12 V/48 V battery architectures, traction inverters, and safety-critical actuator drivers.

FAQ

What is the maximum allowable gate-source voltage for IAUCN08S7N019?

The absolute maximum gate-source voltage is ±20 V. Operation above +10 V or below –5 V does not improve R_DS(on) but increases gate oxide stress risk. Recommended drive is 10 V for full enhancement and 0 V or –5 V for guaranteed turn-off, especially in noisy automotive environments.

Does IAUCN08S7N019 require an external freewheeling diode in H-bridge configurations?

No. Its integrated body diode is rated for 175 A continuous forward current and 596 A pulsed current, with t_rr of 40–60 ns and Q_rr of 27–54 nC. This enables reliable synchronous rectification in motor drives without added diode components, provided layout minimizes parasitic inductance.

How is thermal performance affected when the exposed drain pad is not soldered to PCB copper?

Without soldering the exposed drain pad (pin 8) to a ≥200 mm² thermal pad, R_thJA degrades from 25.9 K/W to >60 K/W, causing >2× higher junction temperature rise at 100 A. This violates AEC-Q101 thermal limits and risks premature failure-full thermal pad connection is mandatory per Infineon's mounting guidelines.

Is IAUCN08S7N019 suitable for use in ISO 26262 ASIL-B or ASIL-C systems?

While IAUCN08S7N019 itself is not ASIL-certified, its AEC-Q101 qualification, 100% avalanche testing, and extended electrical screening make it a qualified building block for ASIL-B/C power stages when used with appropriate fault-detection circuitry (e.g., overcurrent, overtemperature, gate monitoring) per system-level functional safety analysis.

IAUCN08S7N019ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 7

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 175A

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -55°C ~ 175°C

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-43

IAUCN08S7N019ATMA1 FAQ

1.How can I place an order for IAUCN08S7N019ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUCN08S7N019ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IAUCN08S7N019ATMA1 reliable?

The price and inventory of IAUCN08S7N019ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUCN08S7N019ATMA1 is usually 5 days.

3.What payment methods are accepted for IAUCN08S7N019ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUCN08S7N019ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IAUCN08S7N019ATMA1?

IAUCN08S7N019ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUCN08S7N019ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUCN08S7N019ATMA1?

For technical support, including IAUCN08S7N019ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUCN08S7N019ATMA1 requirements.

6.How does Aetrix verify that IAUCN08S7N019ATMA1 is sourced from the original manufacturer or authorized distributors?

All IAUCN08S7N019ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUCN08S7N019ATMA1 meets industry standards.

7.What is the process for return or replacement of IAUCN08S7N019ATMA1?

All IAUCN08S7N019ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUCN08S7N019ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUCN08S7N019ATMA1 part is unused and in its original packaging.

Return procedure for IAUCN08S7N019ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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