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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IAUCN08S7N024ATMA1

Name: IAUCN08S7N024ATMA1
Brand: Infineon Technologies
SKU: IAUCN08S7N024ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IAUCN08S7N024ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IAUCN08S7N024ATMA1.pdf

Description:: MOSFET_(75V 120V(

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Product details

Overview

IAUCN08S7N024 from Infineon is an N-channel enhancement-mode automotive power MOSFET in PG-TDSON-8-34 package, rated for 80 V V_DS, 2.4 mΩ R_DS(on) at V_GS = 10 V, and 165 A chip-limited continuous drain current. It operates up to 175°C, passes 100% single-pulse avalanche testing, and supports high-current motor control and DC-DC conversion in engine management and battery systems.

For engineers reviewing the IAUCN08S7N024 datasheet, IAUCN08S7N024 pinout, IAUCN08S7N024 application, or IAUCN08S7N024 equivalent, this page delivers verified electrical specs (R_DS(on), Q_g, E_AS), thermal resistance (R_thJC = 1.0 K/W), AEC-Q101 qualification status, and real-world use cases in 48 V mild-hybrid inverters and high-side load switches.

Technical Context

This OptiMOS™ 7 device uses trench-gate superjunction technology optimized for low conduction and switching losses in automotive 12 V/48 V systems. Its 2.4 mΩ R_DS(on) enables high-efficiency power stages, while 67 nC total gate charge and 14.9 nC Q_gd support fast, controllable switching with minimal Miller effect.

The MOSFET integrates a robust body diode with 34 ns t_rr and 44 nC Q_rr, enabling reliable synchronous rectification and freewheeling in bidirectional converters. MSL1 rating and 260°C peak reflow compatibility ensure manufacturability in automated SMT lines.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Supports 48 V nominal bus with 1.7× safety margin for transients in automotive start-stop and regenerative braking.
R_DS(on)	2.4 mΩ max @ V_GS = 10 V - Enables ≤1.8 W conduction loss at 100 A, critical for thermally constrained under-hood modules.
I_D (chip-limited)	165 A - Allows high-current phase-leg operation without external current sharing in traction inverters or starter generators.
E_AS	103 mJ - Withstands repetitive inductive switching energy in solenoid drivers and motor phase commutation without failure.
R_thJC	1.0 K/W - Enables direct heatsink mounting for >100 W power dissipation with <100 K junction-to-case temperature rise.
Q_g	67.0 nC - Determines gate driver power requirement; supports 100 kHz PWM with standard 2 A peak drivers.
t_rr	34–51 ns - Minimizes reverse recovery loss and EMI in hard-switched buck/boost topologies.

Pinout & Package

Package: PG-TDSON-8-34 - Thermally enhanced 8-pin exposed-pad surface-mount package with 3.3 mm × 3.3 mm footprint, 0.65 mm pitch, and integrated thermal pad for low-inductance, high-power PCB mounting.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7	Source (S)	Common source connection across 5 pins reduces parasitic inductance and improves current sharing in high-di/dt applications.
4	Gate (G)	Single gate input with 1.2 Ω internal gate resistance - simplifies external gate resistor selection for controlled turn-on/turn-off.
8	Drain (D)	Exposed drain pad (bottom side) - primary thermal and current path to PCB copper; requires full-solder paste coverage for R_thJC compliance.

Key Features

Feature	Design Value
AEC-Q101 qualified + extended reliability testing	Validated beyond standard automotive stress tests including HTGB, HTRB, and UHAST - ensures field lifetime >15 years in engine bay environments.
100% single-pulse avalanche tested	Every unit screened for E_AS ≥103 mJ - eliminates latent failures in inductive load switching like fuel injectors and HVAC actuators.
175°C maximum operating temperature	Enables placement near heat sources (e.g., exhaust manifolds, power converters) without derating - reduces need for remote mounting or forced cooling.
MSL1 rating (260°C peak reflow)	Compatible with standard lead-free reflow profiles - eliminates moisture sensitivity handling and baking steps in high-volume SMT production.

Applications

Engine Control Unit (ECU) High-Side Switch

48 V Mild-Hybrid DC-DC Converter

Use Scenario: Switching 12 V auxiliary loads (coolant pumps, turbochargers) directly from ECU output stage.

IC Role / Device Role: High-side N-channel MOSFET with integrated bootstrap gate drive support and avalanche ruggedness.

Use Value: Eliminates need for external P-channel or high-side driver ICs; 2.4 mΩ R_DS(on) limits voltage drop to <0.25 V at 100 A, preserving system efficiency.

Use Scenario: Primary switch in 48 V–12 V bi-directional buck-boost converter for energy recovery and load leveling.

IC Role / Device Role: Low-R_DS(on) synchronous rectifier and main switching element in interleaved phase legs.

Use Value: 165 A chip-limited current and 1.0 K/W R_thJC enable >5 kW power density with passive heatsinking - meets OEM packaging constraints.

Electric Power Steering (EPS) Motor Inverter

Automotive Battery Disconnect Switch

Use Scenario: Half-bridge phase leg in 3-phase EPS motor drive operating at 10–20 kHz PWM frequency.

IC Role / Device Role: Low-Q_gd (14.9 nC) MOSFET minimizing shoot-through risk and reducing gate driver losses.

Use Value: 34 ns t_rr and low C_oss (1433–1863 pF) suppress voltage spikes during commutation - improves EMC and extends IGBT/MOSFET lifetime.

Use Scenario: Main isolation switch between 12 V battery and vehicle distribution board, activated during crash or service mode.

IC Role / Device Role: Robust, high-current disconnect MOSFET with guaranteed avalanche capability and overtemperature shutdown interface.

Use Value: 103 mJ E_AS withstands inductive kickback from solenoid-based contactors; 175°C rating ensures operation during thermal runaway events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB180N04S4-02	40 V V_DS, 2.0 mΩ R_DS(on), same PG-TDSON-8 package	Lower voltage rating - suitable only for 12 V/24 V systems, not 48 V architectures	Select when designing for legacy 12 V platforms requiring higher current density at lower voltage.
IAUZ40N04S5L035ATMA1	40 V V_DS, 3.5 mΩ R_DS(on), 175°C rating, AEC-Q101 qualified	Higher R_DS(on) and lower ID - better suited for space-constrained 12 V body electronics vs. powertrain	Prefer for cost-sensitive interior modules where thermal margin exceeds requirements.

Compared with IPB180N04S4-02 and IAUZ40N04S5L035ATMA1, IAUCN08S7N024 uniquely balances 80 V rating, 2.4 mΩ conduction loss, and 165 A current capacity - making it the only option validated for 48 V mild-hybrid main switch and high-power engine actuation.

Availability

IAUCN08S7N024 is available at Aetrix Electronics and suitable for engine control units, 48 V DC-DC converters, electric power steering inverters, and battery disconnect systems requiring stable component supply across automotive production lifecycles.

Supply support for IAUCN08S7N024 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOS™ 7 automotive power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 12 V/48 V hybrid vehicle architectures and demanding under-hood environments.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The IAUCN08S7N024 is rated for continuous operation up to +175°C junction temperature, as confirmed by AEC-Q101 qualification testing and thermal characterization. This allows direct mounting on high-temperature substrates in engine compartments without active cooling, provided PCB thermal design maintains T_j ≤175°C under worst-case ambient and power dissipation conditions.

Does this MOSFET require a gate driver with negative voltage capability?

No. The IAUCN08S7N024 has a ±20 V gate-source voltage rating and is designed for standard 0 V to +10 V or +12 V gate drive. Its 2.8 V typical V_GS(th) and 4.7 V gate plateau voltage ensure reliable turn-on with common automotive gate drivers; negative voltage is unnecessary for safe operation or noise immunity.

Is the body diode suitable for synchronous rectification in a buck converter?

Yes. The integrated body diode is characterized with 34–51 ns reverse recovery time (t_rr) and 22–44 nC reverse recovery charge (Q_rr) at 50 A, enabling efficient synchronous rectification in 100–200 kHz buck converters. Its low V_SD (0.9–1.0 V) further reduces conduction loss compared to external Schottky diodes in 48 V–12 V step-down stages.

How is avalanche ruggedness verified for production units?

Every IAUCN08S7N024 wafer lot undergoes 100% single-pulse avalanche testing at I_AS = 110 A and E_AS = 103 mJ per JEDEC JESD24-11. Units failing this test are discarded. This screening ensures all shipped devices meet minimum avalanche energy capability - critical for reliability in inductive load switching such as fuel injectors and solenoid valves.

IAUCN08S7N024ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 7

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 165A

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: 16 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -55°C ~ 175°C

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-34

IAUCN08S7N024ATMA1 FAQ

1.How can I place an order for IAUCN08S7N024ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUCN08S7N024ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IAUCN08S7N024ATMA1 reliable?

The price and inventory of IAUCN08S7N024ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUCN08S7N024ATMA1 is usually 5 days.

3.What payment methods are accepted for IAUCN08S7N024ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUCN08S7N024ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IAUCN08S7N024ATMA1?

IAUCN08S7N024ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUCN08S7N024ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUCN08S7N024ATMA1?

For technical support, including IAUCN08S7N024ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUCN08S7N024ATMA1 requirements.

6.How does Aetrix verify that IAUCN08S7N024ATMA1 is sourced from the original manufacturer or authorized distributors?

All IAUCN08S7N024ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUCN08S7N024ATMA1 meets industry standards.

7.What is the process for return or replacement of IAUCN08S7N024ATMA1?

All IAUCN08S7N024ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUCN08S7N024ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUCN08S7N024ATMA1 part is unused and in its original packaging.

Return procedure for IAUCN08S7N024ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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