Infineon Technologies IAUCN08S7N034ATMA1
- Part No.:
- IAUCN08S7N034ATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
IAUCN08S7N034ATMA1.pdf
- Description:
- MOSFET_(75V 120V(
- Quantity:
- Payment:

- Shipping:

Inventory:4,814
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Product details
Overview
IAUCN08S7N034 from Infineon is an N-channel enhancement-mode automotive power MOSFET with 80 V VDS, 3.4 mΩ RDS(on) at VGS = 10 V and 60 A, 120 A chip-limited continuous drain current, and 175 °C maximum operating temperature - used in high-current DC-DC converters and motor control stages in engine management and ADAS power systems.
For engineers reviewing the IAUCN08S7N034 datasheet, IAUCN08S7N034 pinout, IAUCN08S7N034 application, or IAUCN08S7N034 equivalent, key selection criteria include avalanche ruggedness (66 mJ single-pulse), MSL1 reflow compatibility, AEC-Q101 qualification, and low gate charge (Qg = 45.8 nC max) for fast switching in 48 V mild-hybrid architectures.
Technical Context
This OptiMOS™ 7 device uses trench-gate superjunction technology optimized for low conduction and switching losses in automotive 12 V/48 V systems. Its 3.4 mΩ RDS(on) enables high-efficiency power delivery at 120 A continuous current, while robust 88 A single-pulse avalanche capability supports fault-tolerant operation in load-dump and inductive switching events.
The MOSFET features integrated body diode with 0.9–1.0 V forward voltage at 60 A and 29–44 ns reverse recovery time, enabling synchronous rectification in bidirectional converters. Gate plateau voltage of 4.7 V ensures stable turn-on under noisy automotive supply conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - supports 48 V system transients up to ISO 7637-2 Pulse 5a (120 V clamp). |
| RDS(on) | 3.4 mΩ max at VGS = 10 V, ID = 60 A - enables <1.5 W conduction loss at 60 A in TO-263 footprint. |
| ID (continuous) | 120 A chip-limited - delivers high power density without external current sharing in compact modules. |
| EAS | 66 mJ single-pulse - withstands inductive energy release during short-circuit events in motor drives. |
| Qg | 45.8 nC max - reduces gate driver power demand and enables >100 kHz switching in DC-DC controllers. |
| Tj max | +175 °C - allows placement near heat sources (e.g., inverters, battery junction boxes) without derating. |
| MSL Level | MSL1 - compatible with standard 260 °C peak reflow profiles, eliminating moisture sensitivity handling. |
Pinout & Package
PG-TDSON-8-34 is a thermally enhanced 8-pin DSO package with exposed drain pad on bottom side for low RthJC (1.3 K/W) and high-power PCB mounting.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7 | Drain (D) | Internally connected to exposed thermal pad - primary current path and heatsink interface. |
| 8 | Source (S) | Low-side reference node - connects to ground plane or shunt resistor for current sensing. |
| G | Gate (G) | Control input - requires <46 nC total gate charge for full enhancement; sensitive to ESD (±20 V rating). |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified beyond standard requirements | Extended electrical testing and 175 °C operation validated per automotive stress test plan. |
| 100% avalanche tested | Each unit subjected to single-pulse avalanche stress at 88 A, ensuring field reliability in inductive load faults. |
| Low RDS(on) × Qg figure-of-merit | 156 mΩ·nC - balances conduction and switching loss for high-frequency 48 V buck converters. |
| Integrated body diode with fast trr | 29–44 ns recovery time - minimizes reverse recovery loss in synchronous rectifier topologies. |
| RoHS-compliant and halogen-free | Meets ELV Directive 2000/53/EC and JEDEC J-STD-609A Class 1 for automotive supply chain compliance. |
Applications
| Engine Control Unit (ECU) Power Stage | 48 V Mild-Hybrid DC-DC Converter |
|---|---|
Use Scenario: High-current 12 V rail switching in gasoline/diesel ECU main power distribution. IC Role / Device Role / Timing Role: Low-side switch controlling solenoid drivers, fuel injectors, and ignition coils. Use Value: 3.4 mΩ RDS(on) limits power loss to <2.5 W at 80 A, reducing thermal design burden on ECU PCB. | Use Scenario: Primary-side synchronous rectifier in bi-directional 48 V ↔ 12 V DC-DC converter. IC Role / Device Role / Timing Role: High-efficiency power FET with fast trr enabling 200 kHz+ switching in phase-shifted full-bridge topology. Use Value: 66 mJ EAS withstands transient overloads during regenerative braking transitions. |
| ADAS Camera Module Power Supply | Electric Power Steering (EPS) Motor Driver |
Use Scenario: Compact 12 V input-to-5 V/3.3 V power stage for imaging sensor and SoC rails. IC Role / Device Role / Timing Role: High-side switch in buck controller IC's external power stage. Use Value: MSL1 rating and -55 °C to +175 °C range ensure reliability in sealed camera housings exposed to under-hood temperatures. | Use Scenario: Half-bridge leg in 3-phase EPS motor inverter driving 12 V BLDC motor. IC Role / Device Role / Timing Role: Low-RDS(on) N-channel MOSFET paired with complementary P-channel or high-side driver. Use Value: 120 A continuous rating supports peak torque currents without parallel devices, simplifying PCB layout. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7AG | 60 V VDS, 2.2 mΩ RDS(on), 220 A rating - lower voltage, higher current, different package (H2PAK-7). | Not suitable for 80 V transients; limited to 48 V systems with tighter voltage margins. | Select only if system VDS stress remains ≤65 V and board space allows H2PAK-7 footprint. |
| IXTQ120N085P | 85 V VDS, 5.2 mΩ RDS(on), TO-268 package - higher RDS(on), larger thermal resistance (RthJC = 1.6 K/W). | Higher conduction loss at 120 A; less suited for compact, high-density modules. | Prefer when legacy TO-268 mounting is required and 1.7× RDS(on) penalty is acceptable. |
Compared with STL220N6F7AG and IXTQ120N085P, IAUCN08S7N034 uniquely combines 80 V rating, 3.4 mΩ RDS(on), PG-TDSON-8-34 thermal performance, and full AEC-Q101 extended validation - making it optimal for next-gen 48 V automotive power stages requiring both voltage headroom and power density.
Availability
IAUCN08S7N034 is available at Aetrix Electronics and suitable for engine control units, 48 V mild-hybrid DC-DC converters, and ADAS camera power supplies requiring stable component supply across automotive production lifecycles.
Supply support for IAUCN08S7N034 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.
This part belongs to the OptiMOS™ 7 automotive power MOSFET product line, engineered specifically for high-current, high-reliability switching in 12 V and 48 V vehicle electrical architectures.
FAQ
What is the maximum allowable gate-source voltage for IAUCN08S7N034?
The absolute maximum gate-source voltage is ±20 V. Operation above +10 V or below -5 V does not improve RDS(on) but increases gate oxide stress risk. Recommended drive is +10 V to ensure full enhancement while maintaining long-term reliability under automotive temperature cycling.
Is IAUCN08S7N034 suitable for synchronous rectification in a 48 V to 12 V buck converter?
Yes. Its 0.9–1.0 V body diode forward voltage at 60 A and 29–44 ns reverse recovery time enable efficient synchronous rectification at switching frequencies up to 300 kHz. The low Qgd/Qgs ratio also improves controllability during dead-time transitions.
Does IAUCN08S7N034 require special PCB layout considerations for thermal management?
Yes. The PG-TDSON-8-34 package relies on soldering the exposed drain pad to a large copper area (≥200 mm²) with ≥6 thermal vias to internal ground planes. Thermal simulation shows junction-to-ambient resistance drops from 26.2 K/W to ≤5.5 K/W with proper layout, essential to sustain 120 A continuous current.
How does the 100% avalanche testing impact field reliability?
Every unit undergoes single-pulse avalanche stress at 88 A and 80 V, verifying robustness against inductive energy spikes during short circuits or load dumps. This screening eliminates latent defects and correlates with >10-year field failure rates below 10 FIT in validated automotive power modules.
IAUCN08S7N034ATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™ 7
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- 10.5 nC @ 10 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -55°C ~ 175°C
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TDSON-8-34
IAUCN08S7N034ATMA1 FAQ
1.How can I place an order for IAUCN08S7N034ATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IAUCN08S7N034ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IAUCN08S7N034ATMA1 reliable?
The price and inventory of IAUCN08S7N034ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUCN08S7N034ATMA1 is usually 5 days.
3.What payment methods are accepted for IAUCN08S7N034ATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUCN08S7N034ATMA1 transactions.
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IAUCN08S7N034ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IAUCN08S7N034ATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IAUCN08S7N034ATMA1?
For technical support, including IAUCN08S7N034ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUCN08S7N034ATMA1 requirements.
6.How does Aetrix verify that IAUCN08S7N034ATMA1 is sourced from the original manufacturer or authorized distributors?
All IAUCN08S7N034ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUCN08S7N034ATMA1 meets industry standards.
7.What is the process for return or replacement of IAUCN08S7N034ATMA1?
All IAUCN08S7N034ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUCN08S7N034ATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IAUCN08S7N034ATMA1 part is unused and in its original packaging.
Return procedure for IAUCN08S7N034ATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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