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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IAUMN08S5N012GAUMA1

Name: IAUMN08S5N012GAUMA1
Brand: Infineon Technologies
SKU: IAUMN08S5N012GAUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IAUMN08S5N012GAUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 4-PowerSFN

Datasheet:: IAUMN08S5N012GAUMA1.pdf

Description:: MOSFET_(75V 120V(

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Product details

Overview

IAUMN08S5N012GAUMA1 from Infineon is an N-channel enhancement-mode automotive power MOSFET in the OptiMOS™ 5 family, rated for 80 V V_DS, 1.2 mΩ R_DS(on) at V_GS = 10 V and I_D = 100 A, with 370 A chip-limited continuous drain current and 175 °C maximum operating temperature. It serves as a high-current switching element in 12 V/24 V automotive power stages including starter motor drivers, DC-DC converters, and battery disconnect circuits.

For engineers reviewing the IAUMN08S5N012GAUMA1 datasheet, IAUMN08S5N012GAUMA1 pinout, IAUMN08S5N012GAUMA1 application, or IAUMN08S5N012GAUMA1 equivalent, key selection criteria include its AEC-Q101 qualification, 100% avalanche testing, MSL2 reflow compatibility up to 260 °C, and low R_DS(on) enabling high-efficiency thermal performance in space-constrained under-hood modules.

Technical Context

This device implements a trench-based silicon MOSFET architecture optimized for low conduction and switching losses in automotive 48 V and dual-battery systems. Its gate threshold voltage (2.2–3.8 V) ensures robust noise immunity while supporting standard 10 V gate drive, and its 149–194 nC total gate charge enables fast turn-on/turn-off with controlled EMI in high-frequency PWM applications.

The integrated body diode exhibits 50–75 ns reverse recovery time and 56–112 nC Q_rr, supporting synchronous rectification and freewheeling in bidirectional power conversion. Thermal design is enabled by a 0.46 K/W junction-to-case resistance and validated operation up to 175 °C ambient-referenced case temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Supports 48 V automotive bus with 2× safety margin against load dump transients
R_DS(on)	1.2 mΩ max @ V_GS=10 V, I_D=100 A - Enables ≤0.012 W conduction loss at 100 A, critical for thermal management in sealed modules
I_D (chip-limited)	370 A - Defines absolute current ceiling independent of package limits; used for SOA boundary definition
E_AS	30 mJ - Confirmed single-pulse avalanche energy rating supports inductive switching without external snubbers
T_j max	175 °C - Validated continuous operation at junction temperature, enabling placement near heat sources in engine compartments
Q_g	194 nC max - Determines gate driver power requirement and switching speed trade-off in 100–500 kHz converters
C_iss	13.55 nF max - Impacts gate drive loop stability and Miller effect during high-dV/dt transitions

Pinout & Package

IAUMN08S5N012GAUMA1 is housed in PG-HSOG-4-1 - a thermally enhanced, surface-mount, 4-terminal leadless package with exposed drain pad (TAB) for direct PCB thermal coupling. The package supports high-current routing via copper-clad thermal pads and meets MSL2 moisture sensitivity per J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Source terminal (N-channel)	Low-side return path; electrically and thermally connected to internal die substrate
2 (Gate)	Control input	High-impedance MOS gate requiring <100 nA leakage current; sensitive to ESD and layout parasitics
3 (Drain)	Main power output	Internally tied to exposed metal TAB; primary thermal and current path to PCB ground plane
4 (Source)	Source terminal (redundant)	Second source connection for reduced bond wire inductance and improved current sharing in parallel configurations
TAB	Drain (thermal & electrical)	Exposed copper pad soldered directly to PCB thermal plane; carries full drain current and dissipates >90% of heat

Key Features

Feature	Design Value
AEC-Q101 qualified beyond standard requirements	Extended reliability validation includes 1,000 h HTOL at 175 °C and enhanced ESD testing (HBM ≥2 kV), ensuring field longevity in harsh automotive environments
100% avalanche tested	Each unit undergoes single-pulse avalanche stress at rated I_AS and V_DS, guaranteeing ruggedness in inductive load switching without derating
Optimized R_DS(on) × Q_g figure-of-merit	1.2 mΩ × 194 nC = 233 mΩ·nC - Balances low conduction loss and manageable switching loss for 100–300 kHz DC-DC topologies
Robust body diode with low Q_rr	56–112 nC reverse recovery charge - Reduces diode switching loss and voltage overshoot during hard commutation in half-bridge configurations
MSL2 rating at 260 °C peak reflow	Enables compatibility with standard lead-free SMT assembly lines without pre-baking, reducing manufacturing complexity and cost

Applications

Starter Motor Control

Battery Disconnect Switch

Use Scenario: High-current engagement/disengagement of 12 V starter solenoids in stop-start systems.

IC Role / Device Role / Timing Role: Low-side power switch handling 300+ A inrush current with <100 µs turn-on for precise crank timing.

Use Value: 1.2 mΩ R_DS(on) limits voltage drop to <0.36 V at 300 A, preserving cranking torque and minimizing thermal stress during repeated cycles.

Use Scenario: Isolation of auxiliary battery banks in dual-battery commercial vehicles during engine-off periods.

IC Role / Device Role / Timing Role: Bidirectional blocking switch with integrated body diode enabling automatic charge balancing when main battery is active.

Use Value: 175 °C T_j rating allows mounting on chassis-mounted busbars exposed to under-hood temperatures exceeding 105 °C.

48 V DC-DC Converter Primary Switch

Electric Power Steering (EPS) H-Bridge Leg

Use Scenario: Primary-side synchronous rectifier in 12 V → 48 V bi-directional buck-boost converters for mild hybrid architectures.

IC Role / Device Role / Timing Role: High-frequency (200 kHz) hard-switched power transistor with low C_iss/C_oss ratio for ZVS-assisted efficiency.

Use Value: 13.55 nF C_iss and 2.33 nF C_oss support clean gate drive waveforms and reduce capacitive switching loss at 200 kHz.

Use Scenario: Upper/lower leg switching in three-phase EPS motor inverters requiring high pulse current capability and short-circuit withstand.

IC Role / Device Role / Timing Role: Fast-turning, avalanche-rugged switch delivering 1400 A pulsed current during motor stall conditions.

Use Value: 30 mJ E_AS and 1400 A I_S,pulse ensure safe operation during sudden motor lock-up without external protection circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IAUZ40N04S5L027AUMA1	40 V V_DS, 2.7 mΩ R_DS(on), lower voltage rating and higher on-resistance	Targeted at 12 V-only systems; unsuitable for 48 V or load-dump tolerant designs	Select only for cost-sensitive 12 V applications where 80 V margin is unnecessary
IPB180N04S4H5ATMA1	40 V V_DS, 0.45 mΩ R_DS(on), TO-263-7 package with higher thermal mass but no MSL2 rating	Higher current density but requires pre-bake and manual thermal interface design; not AEC-Q101 extended qualified	Prefer for high-volume 12 V industrial inverters where automotive qualification is not mandated

Compared with IAUZ40N04S5L027AUMA1 and IPB180N04S4H5ATMA1, IAUMN08S5N012GAUMA1 uniquely combines 80 V rating, 1.2 mΩ conduction loss, AEC-Q101 extended qualification, and MSL2 reflow compatibility - making it the only option qualified for next-generation 48 V automotive power stages requiring zero derating at 175 °C.

Availability

IAUMN08S5N012GAUMA1 is available at Aetrix Electronics and suitable for automotive starter control, 48 V DC-DC conversion, and battery disconnect switching requiring stable component supply across multi-year vehicle production lifecycles.

Supply support for IAUMN08S5N012GAUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

This part belongs to the OptiMOS™ 5 automotive power MOSFET product line, engineered specifically for high-current, high-temperature switching in 12 V, 24 V, and 48 V vehicle electrical architectures with emphasis on avalanche ruggedness and long-term reliability.

FAQ

What is the maximum allowable gate-source voltage for IAUMN08S5N012GAUMA1?

The absolute maximum V_GS is ±20 V, as specified in the Absolute Maximum Ratings table. Operation above +10 V provides optimal R_DS(on) performance, while gate drive circuits must limit transient overshoot to avoid oxide damage. The typical gate plateau voltage is 4.5 V, confirming reliable turn-on with standard 10 V logic-level drivers.

Does IAUMN08S5N012GAUMA1 require a gate resistor for safe operation?

Yes - a gate resistor (typically 3.5 Ω, per datasheet test condition) is required to control dV/dt and prevent oscillation during switching. The device's 1.4 Ω typical gate resistance and 194 nC total gate charge make external R_G essential for managing rise/fall times (16 ns t_r, 55 ns t_f) and minimizing EMI in high-frequency applications.

Can IAUMN08S5N012GAUMA1 be paralleled with identical units?

Yes - its positive temperature coefficient of R_DS(on) (1.5–1.7 mΩ at 100 °C vs. 1.0–1.2 mΩ at 25 °C) ensures inherent current sharing. Layout symmetry, matched gate drive paths, and shared thermal plane are required. The dual-source pin configuration (Pins 1 and 4) further reduces source inductance imbalance in parallel configurations.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

Yes - the body diode is rated for 300 A continuous forward current at T_C = 25 °C and 1400 A pulsed current (100 µs). Its 0.9–1.2 V forward voltage at 100 A and 50–75 ns t_rr enable efficient freewheeling in hard-switched and quasi-resonant topologies, though external Schottky diodes may be preferred for ultra-low V_F in high-frequency designs.

IAUMN08S5N012GAUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 4-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 300A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 1.2mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 232µA

Gate Charge (Qg) (Max) @ Vgs:: 194 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 13550 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 325W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOG-4-1

IAUMN08S5N012GAUMA1 FAQ

1.How can I place an order for IAUMN08S5N012GAUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUMN08S5N012GAUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IAUMN08S5N012GAUMA1 reliable?

The price and inventory of IAUMN08S5N012GAUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUMN08S5N012GAUMA1 is usually 5 days.

3.What payment methods are accepted for IAUMN08S5N012GAUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUMN08S5N012GAUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IAUMN08S5N012GAUMA1?

IAUMN08S5N012GAUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUMN08S5N012GAUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUMN08S5N012GAUMA1?

For technical support, including IAUMN08S5N012GAUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUMN08S5N012GAUMA1 requirements.

6.How does Aetrix verify that IAUMN08S5N012GAUMA1 is sourced from the original manufacturer or authorized distributors?

All IAUMN08S5N012GAUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUMN08S5N012GAUMA1 meets industry standards.

7.What is the process for return or replacement of IAUMN08S5N012GAUMA1?

All IAUMN08S5N012GAUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUMN08S5N012GAUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUMN08S5N012GAUMA1 part is unused and in its original packaging.

Return procedure for IAUMN08S5N012GAUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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