Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IAUMN08S5N013GAUMA1

Name: IAUMN08S5N013GAUMA1
Brand: Infineon Technologies
SKU: IAUMN08S5N013GAUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IAUMN08S5N013GAUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 4-PowerSFN

Datasheet:: IAUMN08S5N013GAUMA1.pdf

Description:: MOSFET_(75V 120V(

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:1,965

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IAUMN08S5N013GAUMA1 from Infineon is an N-channel enhancement-mode automotive power MOSFET in the OptiMOS™ 5 family, rated for 80 V V_DS, 1.3 mΩ R_DS(on) at V_GS = 10 V and I_D = 100 A, with 350 A chip-limited continuous drain current and 175 °C maximum junction temperature. It serves as a high-current, low-loss main switch in 48 V mild-hybrid DC-DC converters and battery disconnect units.

For engineers reviewing the IAUMN08S5N013GAUMA1 datasheet, IAUMN08S5N013GAUMA1 pinout, IAUMN08S5N013GAUMA1 application, or IAUMN08S5N013GAUMA1 equivalent, key selection criteria include its AEC-Q101 qualification, MSL2 reflow compatibility up to 260 °C, 100% avalanche testing, and thermal resistance of 0.49 K/W (junction-to-case).

Technical Context

This device implements a trench-based silicon MOSFET architecture optimized for low R_DS(on) × Q_g figure-of-merit in high-frequency switching applications. Its gate threshold voltage (2.2–3.8 V) and plateau voltage (4.6 V) support robust gate drive margin under automotive transients.

It integrates a co-packaged freewheeling diode with 250 A continuous forward current capability, 0.9–1.2 V forward voltage at 100 A, and 49–73 ns reverse recovery time-enabling efficient synchronous rectification and bidirectional energy transfer in regenerative braking circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage for 48 V system-level overvoltage protection including load dump
R_DS(on)	1.3 mΩ @ V_GS = 10 V, I_D = 100 A - Enables <1.3 W conduction loss at 100 A, critical for thermal management in compact modules
I_D (chip-limited)	350 A - Supports peak currents in starter-alternator and traction inverter precharge stages without derating
E_AS	30 mJ - Confirmed single-pulse avalanche energy rating ensures reliability during inductive switching faults
T_j max	175 °C - Allows operation in under-hood environments with minimal heatsinking in space-constrained ECUs
R_thJC	0.49 K/W - Enables direct thermal coupling to cold plates in automotive power modules
AEC-Q101	Qualified - Meets stress test requirements for automotive electronics including temperature cycling, HTRB, and ESD

Pinout & Package

Package: PG-HSOG-4-1 - Thermally enhanced 4-pin surface-mount package with exposed drain tab for low-inductance, high-current PCB mounting and direct thermal path to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for channel current	Connected to PCB ground plane; low-inductance layout minimizes switching oscillation
2 (Gate)	Control terminal for channel turn-on/turn-off	Requires <10 Ω gate resistor to dampen ringing; sensitive to ESD per AEC-Q101 HBM spec
3 (Drain)	Main power output node	Internally bonded to large copper tab; must be soldered to thermal pad for R_thJC performance
4 (Source)	Secondary source connection	Reduces source inductance in high-di/dt applications; used for Kelvin sensing in precision current monitoring
TAB (Drain)	Primary drain terminal and thermal interface	Exposed metal tab on bottom side; requires full-solder coverage to achieve 0.49 K/W R_thJC

Key Features

Feature	Design Value
OptiMOS™ 5 technology	Ultra-low R_DS(on) × Q_g enables >98% efficiency in 48 V buck converters at 300 kHz
100% avalanche tested	Every unit validated for single-pulse energy handling up to 30 mJ, eliminating field failure risk from inductive kick
MSL2 @ 260 °C	Compatible with standard lead-free reflow profiles without popcorn or delamination
Extended AEC-Q101 validation	Includes additional HTGB and UHAST tests beyond baseline AEC-Q101, improving long-term reliability in humid under-hood conditions
Robust body diode	Q_rr = 55–109 nC and t_rr = 49–73 ns enable zero-voltage switching in LLC resonant topologies

Applications

48 V Mild-Hybrid DC-DC Converter

Battery Disconnect Unit (BDU)

Use Scenario: Step-down conversion from 48 V nominal bus to 12 V auxiliary supply in PHEV platforms.

IC Role / Device Role / Timing Role: Primary high-side synchronous rectifier MOSFET operating at 200–300 kHz with forced-air cooling.

Use Value: 1.3 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 2.0 mΩ devices, enabling 50 W/cm² power density.

Use Scenario: High-current isolation between traction battery and vehicle sub-systems during crash or fault events.

IC Role / Device Role / Timing Role: Main contactor replacement in solid-state BDU, conducting up to 350 A continuously.

Use Value: 175 °C T_j rating allows sustained operation at 150 °C case temperature without derating in sealed enclosures.

Starter-Alternator Inverter

Regenerative Braking Energy Recovery

Use Scenario: Bidirectional power flow control in integrated starter-generator (ISG) systems.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg, commutated at 10–20 kHz with active gate control.

Use Value: 0.49 K/W R_thJC supports 250 A pulsed current for 100 µs without exceeding 150 °C junction limit.

Use Scenario: Capturing kinetic energy during deceleration and feeding it back into the 48 V battery.

IC Role / Device Role / Timing Role: Freewheeling diode in synchronous boost converter, conducting reverse recovery current during switching transitions.

Use Value: 55–109 nC Q_rr and soft recovery reduce EMI and diode losses by 40% compared to standard FRD alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IAUZ40N04S5L027	40 V V_DS, 2.7 mΩ R_DS(on), same PG-HSOG-4-1 package	Limited to 24–36 V systems; lower voltage rating restricts use in 48 V architectures	Select only for cost-sensitive 24 V commercial vehicle applications where 80 V headroom is unnecessary
IPB180N04S4H5ATMA1	40 V V_DS, 0.45 mΩ R_DS(on), TO-263-7 package	Higher current density but incompatible footprint and thermal interface; no AEC-Q101 extended qualification	Use when ultra-low R_DS(on) is prioritized over automotive qualification and thermal design continuity

Compared with IAUZ40N04S5L027 and IPB180N04S4H5ATMA1, IAUMN08S5N013GAUMA1 uniquely balances 80 V rating, 1.3 mΩ conduction loss, AEC-Q101 extended validation, and PG-HSOG-4-1 thermal-mechanical compatibility-making it the only qualified solution for production 48 V mild-hybrid main switches.

Availability

IAUMN08S5N013GAUMA1 is available at Aetrix Electronics and suitable for 48 V mild-hybrid DC-DC converters, battery disconnect units, and starter-alternator inverters requiring stable component supply across multi-year automotive production programs.

Supply support for IAUMN08S5N013GAUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOS™ 5 automotive power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 48 V boardnet systems-including mild-hybrid vehicles, electric power steering, and advanced driver-assistance systems.

FAQ

What is the maximum allowable gate-source voltage for IAUMN08S5N013GAUMA1?

The absolute maximum gate-source voltage is ±20 V, per the datasheet's "Maximum ratings" table. Operation above +15 V or below –10 V risks permanent gate oxide damage. Recommended gate drive is 10–12 V for full enhancement with margin against Miller-induced turn-on during high di/dt events.

Does IAUMN08S5N013GAUMA1 require external gate resistors in automotive applications?

Yes-external gate resistors are mandatory for EMI control and dv/dt immunity. A 5–10 Ω resistor is recommended between driver output and gate pin to suppress ringing caused by PCB trace inductance and minimize false triggering during load dump transients per ISO 7637-2.

How is the 350 A continuous drain current rating achieved given the 1.3 mΩ R_DS(on)?

The 350 A rating is chip-limited and valid only at T_C = 25 °C with ideal heatsinking. At 100 °C case temperature, continuous current drops to ~200 A due to R_DS(on) increase and thermal derating. Real-world designs must verify junction temperature using R_thJC = 0.49 K/W and actual thermal interface resistance.

Can IAUMN08S5N013GAUMA1 replace older OptiMOS™ 3 or 4 devices in existing designs?

Yes-pin-compatible with previous-generation PG-HSOG-4-1 OptiMOS™ devices, but requires gate drive voltage verification: OptiMOS™ 5 has higher gate charge (138–179 nC) and lower V_GS(th) (2.2–3.8 V), so legacy drivers may need updated slew rate and voltage compliance settings to ensure clean switching.

IAUMN08S5N013GAUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 4-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 250A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 1.3mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 214µA

Gate Charge (Qg) (Max) @ Vgs:: 179 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 12496 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 307W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOG-4-1

IAUMN08S5N013GAUMA1 FAQ

1.How can I place an order for IAUMN08S5N013GAUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUMN08S5N013GAUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IAUMN08S5N013GAUMA1 reliable?

The price and inventory of IAUMN08S5N013GAUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUMN08S5N013GAUMA1 is usually 5 days.

3.What payment methods are accepted for IAUMN08S5N013GAUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUMN08S5N013GAUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IAUMN08S5N013GAUMA1?

IAUMN08S5N013GAUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUMN08S5N013GAUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUMN08S5N013GAUMA1?

For technical support, including IAUMN08S5N013GAUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUMN08S5N013GAUMA1 requirements.

6.How does Aetrix verify that IAUMN08S5N013GAUMA1 is sourced from the original manufacturer or authorized distributors?

All IAUMN08S5N013GAUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUMN08S5N013GAUMA1 meets industry standards.

7.What is the process for return or replacement of IAUMN08S5N013GAUMA1?

All IAUMN08S5N013GAUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUMN08S5N013GAUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUMN08S5N013GAUMA1 part is unused and in its original packaging.

Return procedure for IAUMN08S5N013GAUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …