Infineon Technologies IAUMN10S5N016GAUMA1

Overview

IAUMN10S5N016GAUMA1 from Infineon is an automotive-grade N-channel enhancement-mode power MOSFET in PG-HSOG-4-1 package, rated for 100 V V_DS, 1.2 mΩ typical R_DS(on) at V_GS = 10 V / I_D = 100 A, and 310 A chip-limited continuous drain current. It operates up to 175 °C junction temperature, supports 100% single-pulse avalanche testing, and is qualified per AEC-Q101 for high-reliability traction inverters and DC-DC converters.

For engineers reviewing the IAUMN10S5N016GAUMA1 datasheet, IAUMN10S5N016GAUMA1 pinout, IAUMN10S5N016GAUMA1 application, or IAUMN10S5N016GAUMA1 equivalent, key selection criteria include its 0.46 K/W R_thJC, 142–190 nC total gate charge, 10439–13570 pF input capacitance, robust 110 A avalanche current rating, and MSL2-compliant reflow profile up to 260 °C.

Technical Context

This OptiMOS™ 5 device uses trench-gate superjunction technology optimized for low conduction and switching losses in high-current automotive power stages. Its gate threshold voltage (2.2–3.8 V) ensures stable turn-on under wide temperature and supply variation, while the 4.5 V gate plateau voltage enables predictable Miller-effect timing during hard-switching.

The integrated body diode delivers 220 A continuous forward current with 0.9–1.2 V forward voltage at 110 A and 25 °C, and exhibits 79–119 ns reverse recovery time with 175–350 nC Q_rr, supporting synchronous rectification and bidirectional energy transfer in 48 V mild-hybrid systems.

Key Specifications

Pinout & Package

PG-HSOG-4-1 is a thermally enhanced surface-mount package with exposed metal tab for direct heatsink attachment. The 4-pin layout places Gate (Pin 1), Source (Pin 2), Drain (Pin 3), and Source (Pin 4) - with Pins 2 and 4 internally connected to the source terminal and the tab electrically tied to Drain.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Compared with IAUZ40N04S5L027AUMA1 and IPB180N10N5LFATMA1, IAUMN10S5N016GAUMA1 uniquely balances 100 V capability, sub-1.3 mΩ conduction loss, full AEC-Q101 qualification, and MSL2 reflow compatibility - making it the only validated option for high-power 48 V–100 V automotive traction and auxiliary power stages.

Availability

IAUMN10S5N016GAUMA1 is available at Aetrix Electronics and suitable for electric power steering (EPS), 48 V mild-hybrid DC-DC converters, and traction inverter auxiliary stages requiring stable component supply, long-term automotive lifecycle support, and traceable sourcing.

Supply support for IAUMN10S5N016GAUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

This device belongs to the OptiMOS™ 5 automotive power MOSFET product line, engineered specifically for high-current, high-temperature switching in electrified vehicle powertrains - emphasizing low R_DS(on), rugged avalanche performance, and AEC-Q101 compliance.

FAQ

What is the maximum allowable gate-source voltage for IAUMN10S5N016GAUMA1?

The absolute maximum V_GS is ±20 V per the datasheet. Operation beyond ±15 V risks permanent gate oxide damage, especially at elevated temperatures. For reliable 10 V gate drive, a 12 V rail with 100 mV ripple is recommended, and gate resistors should be selected to limit dV/dt-induced overshoot below 15 V.

Does IAUMN10S5N016GAUMA1 require external gate resistors in automotive inverter designs?

Yes - a 3.5 Ω gate resistor is specified in the datasheet for switching characterization (e.g., t_r, t_f). In production inverters, values between 2.2 Ω and 5.6 Ω are typical to balance switching loss, EMI, and shoot-through immunity. Lower values increase dI/dt but raise risk of parasitic turn-on; higher values slow switching and increase losses.

Can IAUMN10S5N016GAUMA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (1.7 mΩ at 175 °C vs. 1.2 mΩ at 25 °C) enables inherent current sharing. Successful parallel operation requires matched PCB layout (symmetrical gate and source paths), identical gate drive signals, and thermal coupling via shared heatsink to maintain ΔT_j < 5 °C between devices.

Is the exposed metal tab electrically isolated from the PCB ground plane?

No - the tab is internally connected to the Drain terminal. When mounted on a heatsink, electrical isolation (e.g., ceramic washer or silicone pad with ≥2 kV dielectric strength) is mandatory unless the heatsink is floating or actively driven. Failure to isolate may cause short-circuit faults or ground-loop noise in sensitive analog sections.