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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IAUS165N08S5N029ATMA1

Name: IAUS165N08S5N029ATMA1
Brand: Infineon Technologies
SKU: IAUS165N08S5N029ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IAUS165N08S5N029ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerSMD, Gull Wing

Datasheet:: IAUS165N08S5N029ATMA1.pdf

Description:: MOSFET N-CH 80V 165A HSOG-8

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Product details

Overview

IAUS165N08S5N029ATMA1 from Infineon Technologies is an AEC-Q101-qualified N-channel enhancement-mode OptiMOS™-5 power MOSFET in PG-HSOG-8-1 package, rated for 80 V V_DS, 2.4 mΩ R_DS(on) at V_GS = 10 V and I_D = 80 A, and 175 °C maximum junction temperature. It delivers ultra-low conduction loss and 100% single-pulse avalanche ruggedness (225 mJ), targeting high-efficiency 48 V automotive DC-DC converters and motor control inverters.

For engineers reviewing the IAUS165N08S5N029ATMA1 datasheet, IAUS165N08S5N029ATMA1 pinout, IAUS165N08S5N029ATMA1 application, or IAUS165N08S5N029ATMA1 equivalent, key selection criteria include its 0.9 K/W R_thJC, 660 A pulsed drain current capability, integrated body diode with 60 ns t_rr, and MSL1 reflow compatibility up to 260 °C - critical for under-hood automotive power stages.

Technical Context

This device employs a trench-based silicon MOSFET architecture optimized for low R_DS(on) × Q_g figure-of-merit, enabling high-frequency switching in synchronous rectification and half-bridge configurations. Its gate plateau voltage of 5.0 V ensures robust turn-on margin against noise in noisy automotive environments.

The integrated body diode exhibits 0.9–1.2 V forward voltage at 100 A and 25 °C, with 96 nC reverse recovery charge and 60 ns recovery time - parameters directly validated for hard-switched inductive loads such as BLDC motor phases and solenoid drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - supports 48 V nominal bus systems with ≥2× overvoltage margin for load dump transients
R_DS(on) max	2.9 mΩ at V_GS = 6 V, I_D = 40 A - enables <1.2 W conduction loss at 40 A continuous
I_D cont	165 A at T_C = 25 °C - limited by bondwire; usable up to 120 A at 100 °C case temperature
E_AS	225 mJ single-pulse avalanche energy - withstands unclamped inductive switching events without failure
t_r/t_f	9 ns rise / 29 ns fall time - supports >500 kHz PWM operation with minimized switching losses
Q_g	70–90 nC total gate charge - determines driver strength requirement for <100 ns turn-on in high-side configurations
R_thJC	0.9 K/W - enables direct thermal coupling to heatsink; 175 °C T_j rating allows compact thermal design

Pinout & Package

Package: PG-HSOG-8-1 - thermally enhanced 8-pin exposed-tab surface-mount package with integrated source-tab connection for low-inductance, high-current PCB layout.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7	Source (S)	Parallel internal source connections reduce source inductance and improve current sharing across multiple die
4	Gate (G)	Single gate input with 31 nC Q_gs; requires low-impedance driver to minimize Miller-induced shoot-through risk
8	Drain (D)	Internally connected to exposed copper tab - must be soldered to large copper pour for thermal and current path
Tab	Drain (D)	Primary current and thermal path; electrically identical to Pin 8; requires isolation from other layers if not referenced to system ground

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications per stress test requirements including HTOL, TC, HTRB
100% avalanche tested	Each unit subjected to single-pulse E_AS stress at 225 mJ - guarantees ruggedness in unclamped inductive switching
MSL1 @ 260 °C	Compatible with standard lead-free reflow profiles without popcorn or delamination risk
Ultra-low R_DS(on) × Q_g	2.4 mΩ @ 10 V with 90 nC Q_g yields FoM of 216 Ω·nC - optimized for high-frequency, high-current efficiency
Integrated body diode	60 ns t_rr, 96 nC Q_rr - reduces reverse recovery loss in synchronous buck and half-bridge freewheeling

Applications

Automotive 48 V DC-DC Converter

BLDC Motor Inverter Phase Leg

Use Scenario: High-efficiency bidirectional buck-boost converter stepping between 12 V and 48 V battery domains in mild-hybrid vehicles.

IC Role / Device Role / Timing Role: High-side and low-side synchronous rectifier MOSFET in interleaved phase legs, switching at 300–500 kHz.

Use Value: 2.4 mΩ R_DS(on) and 0.9 K/W R_thJC enable >96% peak efficiency at 10 kW output while maintaining T_j < 150 °C.

Use Scenario: 3-phase inverter driving 4–10 kW traction motors in electric power steering (EPS) and HVAC compressors.

IC Role / Device Role / Timing Role: Low-side switch in each phase leg, conducting continuous 80–120 A with 660 A pulse capability during torque surge.

Use Value: 100% avalanche testing ensures survival during phase current reversal faults and regenerative braking spikes.

Onboard Charger (OBC) Primary Switch

12 V Automotive Load Dump Protection

Use Scenario: Active clamp flyback or LLC primary-side switch in 3.3–6.6 kW AC/DC onboard chargers for BEVs/PHEVs.

IC Role / Device Role / Timing Role: High-voltage, high-current switching element handling 80 V blocking and 100 A peak currents at 100–200 kHz.

Use Value: 80 V V_DS rating with 225 mJ E_AS accommodates reflected transients from transformer leakage inductance.

Use Scenario: Clamping switch in TVS-assisted load dump protection circuits for engine control units (ECUs) and ADAS domain controllers.

IC Role / Device Role / Timing Role: Fast-turning-on switch that shunts excess generator voltage (>40 V) to ground during ISO 7637-2 Pulse 5a events.

Use Value: 660 A pulsed current rating and 175 °C operation ensure reliable clamping under worst-case 120 V/100 ms transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 80 V automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB180N08N5-03	R_DS(on) = 3.0 mΩ (typ), same PG-HSOG-8-1 package, lower Q_g (65 nC)	Slightly higher conduction loss but faster switching; better suited for >1 MHz resonant topologies	Prefer when gate drive loss dominates over conduction loss in high-frequency designs
IAUZ40N08S5N012	Lower current rating (40 A), smaller PG-TSDSON-8 package, R_DS(on) = 1.2 mΩ	Not suitable for 120+ A applications; used in auxiliary 48 V subsystems (e.g., seat heaters, pumps)	Select only for space-constrained, lower-power nodes where thermal mass is limited

Compared with IPB180N08N5-03 and IAUZ40N08S5N012, IAUS165N08S5N029ATMA1 uniquely balances 165 A continuous current, 2.4 mΩ on-resistance, and 225 mJ avalanche energy - making it the only option among the three qualified for main inverter legs in 48 V hybrid powertrains.

Availability

IAUS165N08S5N029ATMA1 is available at Aetrix Electronics and suitable for automotive 48 V DC-DC converters, BLDC motor inverters, and onboard charger primary switches requiring stable component supply across multi-year vehicle production cycles.

Supply support for IAUS165N08S5N029ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and SiC power devices for industrial and transportation markets.

This part belongs to the OptiMOS™-5 automotive power MOSFET product line, engineered specifically for high-current, high-temperature 48 V boardnet applications demanding AEC-Q101 qualification and field-proven avalanche ruggedness.

FAQ

What is the maximum allowable gate-source voltage for IAUS165N08S5N029ATMA1?

The absolute maximum gate-source voltage is ±20 V, as specified in the Absolute Maximum Ratings table. Operation beyond ±15 V is not recommended for long-term reliability; typical gate drive uses 10 V for full enhancement and 0 V or −5 V for fast, low-loss turn-off in half-bridge configurations.

Does IAUS165N08S5N029ATMA1 have an integrated Schottky diode?

No - it features a planar silicon body diode inherent to the MOSFET structure, not a discrete Schottky. Its V_SD is 0.9–1.2 V at 100 A and 25 °C, with 60 ns t_rr and 96 nC Q_rr, characteristics confirmed in the Electrical Characteristics section (page 3 of datasheet Rev. 1.0).

Can this MOSFET be used in a synchronous rectifier configuration at 1 MHz?

Yes - with 9 ns t_r, 29 ns t_f, and 70–90 nC Q_g, it supports efficient operation up to 1 MHz in hard-switched topologies when paired with a capable gate driver (e.g., 2 A peak sink/source). However, conduction loss dominates above 500 kHz; thermal design must account for increased switching loss at higher frequencies.

Is the PG-HSOG-8-1 package lead-free and RoHS compliant?

Yes - the device is marked "Green product (RoHS compliant)" in the Features section and qualified to MSL1 at 260 °C peak reflow, confirming full compliance with EU RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity requirements.

IAUS165N08S5N029ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerSMD, Gull Wing

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 165A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 2.9mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 108µA

Gate Charge (Qg) (Max) @ Vgs:: 90 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6370 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 167W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOG-8-1

IAUS165N08S5N029ATMA1 FAQ

1.How can I place an order for IAUS165N08S5N029ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUS165N08S5N029ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IAUS165N08S5N029ATMA1 reliable?

The price and inventory of IAUS165N08S5N029ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUS165N08S5N029ATMA1 is usually 5 days.

3.What payment methods are accepted for IAUS165N08S5N029ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUS165N08S5N029ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IAUS165N08S5N029ATMA1?

IAUS165N08S5N029ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUS165N08S5N029ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUS165N08S5N029ATMA1?

For technical support, including IAUS165N08S5N029ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUS165N08S5N029ATMA1 requirements.

6.How does Aetrix verify that IAUS165N08S5N029ATMA1 is sourced from the original manufacturer or authorized distributors?

All IAUS165N08S5N029ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUS165N08S5N029ATMA1 meets industry standards.

7.What is the process for return or replacement of IAUS165N08S5N029ATMA1?

All IAUS165N08S5N029ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUS165N08S5N029ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUS165N08S5N029ATMA1 part is unused and in its original packaging.

Return procedure for IAUS165N08S5N029ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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