Infineon Technologies IAUS200N08S5N023ATMA1

Overview

IAUS200N08S5N023ATMA1 from Infineon Technologies is an AEC-Q101-qualified N-channel enhancement-mode power MOSFET in PG-HSOG-8-1 package, rated for 80 V V_DS, 2.3 mΩ R_DS(on) at 100 A/10 V, and 175 °C operation. It delivers ultra-low conduction loss in high-current automotive power stages such as 48 V DC-DC converters and electric power steering motor drives.

For engineers reviewing the IAUS200N08S5N023ATMA1 datasheet, IAUS200N08S5N023ATMA1 pinout, IAUS200N08S5N023ATMA1 application, or IAUS200N08S5N023ATMA1 equivalent, key selection criteria include its 200 A continuous drain current at T_C=25 °C, 100% avalanche-tested ruggedness, MSL1 reflow compatibility, and integrated source-drain diode with 65 ns t_rr.

Technical Context

This OptiMOS™-5 device uses trench-based silicon technology optimized for low R_DS(on) × Q_g figure-of-merit in high-frequency switching applications. Its gate threshold voltage (2.2–3.8 V) enables robust TTL/CMOS-level drive compatibility while maintaining noise immunity.

The MOSFET integrates a fast-recovery body diode (t_rr = 65 ns, Q_rr = 110 nC) and supports unclamped inductive switching up to 330 mJ E_AS at I_D = 100 A. Thermal resistance R_thJC is fixed at 0.7 K/W, enabling high-power density layout with direct heatsink mounting via exposed drain tab.

Key Specifications

Pinout & Package

Package: PG-HSOG-8-1 - Thermally enhanced surface-mount package with exposed drain tab for direct heatsink attachment and 8-pin leadframe configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Compared with IAUZ40N08S5N024ATMA1 and IPB180N08S4-02, IAUS200N08S5N023ATMA1 uniquely balances 200 A current capability with 2.3 mΩ on-resistance and 175 °C operation-making it optimal for thermally demanding, high-peak-current automotive inverters where both conduction loss and thermal margin are critical.

Availability

IAUS200N08S5N023ATMA1 is available at Aetrix Electronics and suitable for electric power steering, 48 V DC-DC conversion, and on-board charger applications requiring stable component supply across automotive production lifecycles.

Supply support for IAUS200N08S5N023ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D infrastructure.

This device belongs to the OptiMOS™-5 power transistor product line, engineered specifically for high-efficiency, high-current automotive and industrial switching applications demanding low R_DS(on), rugged avalanche performance, and extended temperature operation.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IAUS200N08S5N023ATMA1 supports 148 A continuous drain current at T_C = 100 °C and V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the package and silicon, not electrical degradation. The 0.7 K/W R_thJC enables predictable thermal modeling for heatsink sizing.

Is this MOSFET suitable for synchronous rectification in a 48 V to 12 V buck converter?

Yes. Its fast body diode (t_rr = 65 ns, Q_rr = 110 nC) and low R_DS(on) (2.3 mΩ) make it well-suited for synchronous rectification at 200–500 kHz. The low Q_gd/Q_gs ratio improves hard-switching behavior, and the 175 °C rating accommodates high ambient temperatures typical in automotive under-hood environments.

Does the PG-HSOG-8-1 package require solder paste stencil adjustments versus standard SO-8?

Yes. The PG-HSOG-8-1 has an exposed drain tab requiring a dedicated thermal pad stencil opening (typically 70–80% area ratio) and thicker paste deposit (≥150 μm) to ensure void-free thermal interface. Standard SO-8 stencils will underfill the tab, compromising thermal performance and mechanical reliability.

How does the 100% avalanche testing impact reliability in motor drive applications?

Each unit undergoes controlled unclamped inductive switching to verify E_AS ≥ 330 mJ at I_D = 100 A. This ensures consistent ruggedness against inductive kickback during fault conditions (e.g., short-circuit turn-off), directly improving system-level reliability in motor drives where load inductance is high and fault currents are rapid.