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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IAUT165N08S5N029ATMA2

Name: IAUT165N08S5N029ATMA2
Brand: Infineon Technologies
SKU: IAUT165N08S5N029ATMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IAUT165N08S5N029ATMA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerSFN

Datasheet:: IAUT165N08S5N029ATMA2.pdf

Description:: MOSFET N-CH 80V 165A 8HSOF

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Product details

Overview

IAUT165N08S5N029ATMA2 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-HSOF-8-1 package, rated for 80 V V_DS, 2.4 mΩ R_DS(on) at V_GS = 10 V and I_D = 80 A, and 175 °C operating temperature - deployed in automotive high-current DC-DC converters and 48 V mild-hybrid motor control stages.

For engineers reviewing the IAUT165N08S5N029ATMA2 datasheet, IAUT165N08S5N029ATMA2 pinout, IAUT165N08S5N029ATMA2 application, or IAUT165N08S5N029ATMA2 equivalent, key selection criteria include ultra-low R_DS(on) (2.4–2.9 mΩ), 100% avalanche-tested ruggedness (225 mJ E_AS), thermal resistance of 0.9 K/W, and AEC-Q101 qualification for under-hood automotive use.

Technical Context

This OptiMOS™-5 device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance: typical C_iss = 5.6 nF, C_oss = 910 pF, and Q_g = 80 nC at V_DD = 40 V. Its gate threshold voltage (2.2–3.8 V) ensures robust noise immunity in noisy automotive environments.

The integrated body diode exhibits V_SD = 0.9–1.2 V at I_F = 100 A and T_j = 25 °C, with t_rr = 60 ns and Q_rr = 96 nC - enabling efficient synchronous rectification and hard-switched flyback operation without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - supports 48 V automotive systems with 20 % overvoltage margin
R_DS(on) max	2.9 mΩ at V_GS = 10 V, I_D = 80 A - enables <1.2 W conduction loss at 100 A continuous
I_D cont	165 A at T_C = 25 °C - delivers high peak current for starter-generator and EPS actuation
E_AS	225 mJ - withstands single-pulse inductive energy without failure in motor drive freewheeling
R_thJC	0.9 K/W - allows direct heatsink mounting with minimal thermal interface resistance
Q_g	90 nC max - compatible with standard gate drivers delivering ≥2 A peak output
T_j max	+175 °C - certified for under-hood placement near engine compartments

Pinout & Package

Package: PG-HSOF-8-1 - surface-mount, thermally enhanced 8-pin exposed-tab leadframe with integrated source/ground plane and dual drain pads for parallel current paths.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6	Source	Low-inductance multi-pin connection to PCB ground plane; reduces common-source inductance during switching
7, 8	Drain	Parallel high-current terminals tied to internal die drain metallization; minimizes R_DS(on) contribution from bond wires
Tab (bottom)	Drain	Exposed copper thermal pad electrically connected to drain; provides primary thermal path to heatsink
Gate	Control input	Pin 1 is isolated gate terminal; requires <20 V absolute max rating and controlled slew rate to avoid oscillation

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications per stress test requirements including HTGB, HTRB, and temperature cycling
100% avalanche tested	Each unit subjected to single-pulse E_AS stress at 225 mJ - guarantees ruggedness in inductive load commutation
MSL1 reflow rating	Suitable for standard lead-free reflow profiles up to 260 °C peak without popcorn or delamination risk
Ultra-low R_DS(on)	2.4 mΩ typ. at 10 V gate drive enables >97 % efficiency in 48 V/100 A buck converters
Integrated body diode	V_SD ≤ 1.2 V and t_rr = 60 ns support ZVS/ZCS soft-switching topologies without external diode

Applications

Automotive 48 V Mild-Hybrid Inverter

Electric Power Steering (EPS) Motor Driver

Use Scenario: High-efficiency bidirectional DC-AC conversion for P0/P1 hybrid architectures using Si MOSFET-based half-bridge modules.

IC Role / Device Role / Timing Role: High-side and low-side switching element in 48 V battery-fed inverter stage; operates at 20–50 kHz with hard-switched PWM.

Use Value: 2.4 mΩ R_DS(on) reduces conduction loss by 35 % vs. legacy 4.5 mΩ devices, extending battery range by ~1.2 km per charge cycle.

Use Scenario: Torque-assist motor control in column-assist EPS systems requiring compact, high-reliability power stages.

IC Role / Device Role / Timing Role: Low-side switch in three-phase bridge driving brushed or BLDC assist motors; handles 120 A pulsed current during steering transients.

Use Value: 175 °C T_j rating and 0.9 K/W R_thJC allow sustained 100 A operation inside sealed EPS housing without derating.

On-Board Charger (OBC) Primary Switch

12 V/48 V DC-DC Bidirectional Converter

Use Scenario: Primary-side switching in resonant LLC topology for AC/DC conversion in EV on-board chargers.

IC Role / Device Role / Timing Role: High-frequency (100–300 kHz) switching transistor in full-bridge configuration; leverages low C_oss and Q_gd for ZVS turn-on.

Use Value: C_oss = 910 pF and Q_gd = 23 nC enable reliable zero-voltage switching down to 150 kHz, reducing switching loss by 42 % vs. comparable 5 mΩ parts.

Use Scenario: Isolated bidirectional buck-boost converter linking 12 V starter battery and 48 V traction auxiliary bus in commercial vehicles.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side synchronous rectification stage; conducts reverse current during regenerative braking.

Use Value: Body diode t_rr = 60 ns and Q_rr = 96 nC minimize reverse recovery loss and EMI during polarity reversal, improving system efficiency by 1.8 % at 5 kW.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 80 V automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IAUS200N08S5N029ATMA1	Same die, but in TO-leadless PG-TDSON-8 package; R_thJC = 1.1 K/W; no exposed drain tab	Better suited for space-constrained PCB layouts where thermal via access is limited	Select when board-level thermal management favors solder-reflowable leadless packages over exposed-tab HSOF
IPB180N08S5H5ATMA1	Higher R_DS(on) (3.5 mΩ max), lower Q_g (65 nC), same AEC-Q101 and 175 °C rating	Preferred for higher-frequency (>100 kHz) SMPS where gate drive loss dominates conduction loss	Select when optimizing for switching loss in resonant converters rather than peak current capability

Compared with IAUS200N08S5N029ATMA1 and IPB180N08S5H5ATMA1, IAUT165N08S5N029ATMA2 delivers the lowest R_DS(on) and best thermal resistance - making it optimal for high-current, thermally constrained automotive inverters where conduction loss and junction temperature are critical.

Availability

IAUT165N08S5N029ATMA2 is available at Aetrix Electronics and suitable for automotive powertrain control, electric power steering systems, and 48 V mild-hybrid inverters requiring stable component supply across extended production lifecycles.

Supply support for IAUT165N08S5N029ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power electronics, automotive microcontrollers, and security ICs, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-5 automotive power MOSFET product line, engineered specifically for high-efficiency, high-reliability 12 V–48 V automotive subsystems including EPS, ADAS actuators, and mild-hybrid converters.

FAQ

What is the maximum allowable gate-source voltage for IAUT165N08S5N029ATMA2?

The absolute maximum gate-source voltage is ±20 V. Operation beyond this rating risks irreversible oxide breakdown. Recommended gate drive is +10 V to ensure full enhancement and +0 V to -5 V for reliable turn-off; negative bias improves noise immunity in high-dV/dt automotive environments.

Does IAUT165N08S5N029ATMA2 require external gate resistors for stability?

Yes - a series gate resistor (typically 2.2–10 Ω) is required to dampen parasitic LC oscillation between gate driver output impedance and MOSFET input capacitance. Without it, ringing can exceed V_GS ratings and cause shoot-through in bridge configurations.

Can IAUT165N08S5N029ATMA2 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (increasing with junction temperature) enables inherent current sharing. Layout must ensure matched gate loop inductance and symmetrical thermal coupling; use Kelvin source connections to avoid gate drive imbalance.

Is the body diode in IAUT165N08S5N029ATMA2 optimized for reverse recovery?

Yes - the diode is process-tuned for fast recovery (t_rr = 60 ns) and low Q_rr (96 nC), verified across temperature and current conditions. This enables use in synchronous rectification and hard-switched topologies without external diode supplementation.

IAUT165N08S5N029ATMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 165A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 2.9mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 108µA

Gate Charge (Qg) (Max) @ Vgs:: 90 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6370 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 167W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-8-1

IAUT165N08S5N029ATMA2 FAQ

1.How can I place an order for IAUT165N08S5N029ATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUT165N08S5N029ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IAUT165N08S5N029ATMA2 reliable?

The price and inventory of IAUT165N08S5N029ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUT165N08S5N029ATMA2 is usually 5 days.

3.What payment methods are accepted for IAUT165N08S5N029ATMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUT165N08S5N029ATMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IAUT165N08S5N029ATMA2?

IAUT165N08S5N029ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUT165N08S5N029ATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUT165N08S5N029ATMA2?

For technical support, including IAUT165N08S5N029ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUT165N08S5N029ATMA2 requirements.

6.How does Aetrix verify that IAUT165N08S5N029ATMA2 is sourced from the original manufacturer or authorized distributors?

All IAUT165N08S5N029ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUT165N08S5N029ATMA2 meets industry standards.

7.What is the process for return or replacement of IAUT165N08S5N029ATMA2?

All IAUT165N08S5N029ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IAUT165N08S5N029ATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUT165N08S5N029ATMA2 part is unused and in its original packaging.

Return procedure for IAUT165N08S5N029ATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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