Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IAUT200N08S5N023ATMA1

Name: IAUT200N08S5N023ATMA1
Brand: Infineon Technologies
SKU: IAUT200N08S5N023ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IAUT200N08S5N023ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerSFN

Datasheet:: IAUT200N08S5N023ATMA1.pdf

Description:: MOSFET N-CH 80V 200A 8HSOF

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,425

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IAUT200N08S5N023ATMA1 from Infineon Technologies is an AEC-Q101-qualified N-channel enhancement-mode power MOSFET in PG-HSOF-8-1 package, rated for 80 V V_DS, 200 A continuous drain current at T_C = 25 °C, and ultra-low 2.3 mΩ R_DS(on) at V_GS = 10 V. It serves as a high-current main switch in automotive 48 V boardnet DC-DC converters and traction inverters.

For engineers reviewing the IAUT200N08S5N023ATMA1 datasheet, IAUT200N08S5N023ATMA1 pinout, IAUT200N08S5N023ATMA1 application, or IAUT200N08S5N023ATMA1 equivalent, key selection criteria include its 175 °C junction rating, 100% avalanche-tested ruggedness, 0.7 K/W R_thJC, and integrated source-connected Kelvin sense capability for precise current monitoring in high-efficiency motor drives.

Technical Context

This OptiMOS™-5 device uses trench-gate superjunction technology optimized for low conduction and switching losses in high-frequency hard-switched topologies. Its gate plateau voltage of 4.8 V enables robust drive margin against Miller-induced false turn-on, while Q_gd/Q_gs ratio of ~0.65 supports fast, controllable switching with minimal overshoot.

The integrated freewheeling diode delivers 1.2 V V_SD at 100 A and 65 ns t_rr, enabling efficient synchronous rectification and ZVS-assisted operation. Thermal design is anchored by a low 0.7 K/W junction-to-case resistance and MSL1 reflow compatibility up to 260 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Supports 48 V automotive systems with ≥1.6× safety margin against transients
R_DS(on) max	2.3 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 100 A, critical for thermal management
I_D cont	200 A @ T_C = 25 °C - Matches peak current demands in electric power steering and starter generators
E_AS	330 mJ - Confirmed single-pulse avalanche energy ensures reliability during load dump or short-circuit events
R_thJC	0.7 K/W - Allows direct heatsink mounting with predictable thermal path for compact inverter modules
Q_g typ	110 nC - Determines gate driver power requirement and switching speed trade-off in 20–100 kHz applications
t_r/t_f	11 ns / 32 ns - Enables fast edge control to reduce EMI and improve efficiency in high-frequency DC-DC stages

Pinout & Package

PG-HSOF-8-1 is a thermally enhanced surface-mount package with exposed drain tab (pins 1–4 and 7–8 internally connected to drain), dual-source terminals (pin 5 and pin 6), and dedicated Kelvin source (pin 3) for accurate current sensing without IR drop error.

Pin/Terminal	Circuit Role	Design Meaning
1–4, 7–8 (Tab)	Drain	High-current power return path; electrically and thermally coupled to PCB copper pour via exposed metal tab
5, 6	Power Source	Main current-carrying source terminals; used for high-side or low-side switching current path
3	Kelvin Source	Reference-sense connection isolated from power loop; enables precise R_DS(on)-based current measurement
2	Gate	Control input; requires 10 V drive for full enhancement; gate charge total 110 nC dictates driver sizing

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive under-hood use including temperature cycling, humidity, and mechanical shock per JESD47
100% avalanche tested	Each unit subjected to single-pulse I_AS = 200 A stress, ensuring field robustness in fault conditions
Ultra-low R_DS(on)	2.3 mΩ max at 10 V enables >98% efficiency in 48 V/100 A buck converters at 50 kHz
MSL1 reflow rating	Withstands peak solder temperatures up to 260 °C, compatible with standard lead-free assembly processes
175 °C operating T_j	Supports sustained operation in engine bay environments without derating below 150 °C ambient

Applications

Electric Power Steering (EPS)

48 V Mild Hybrid DC-DC Converter

Use Scenario: High-current H-bridge driving 3-phase brushless motor with peak loads up to 180 A.

IC Role / Device Role / Timing Role: Low-side main switch with Kelvin source feedback for torque-current regulation.

Use Value: 2.3 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 3.5 mΩ devices, lowering heatsink mass by 40%.

Use Scenario: Primary-side synchronous rectifier in bidirectional 48 V/12 V LLC resonant converter.

IC Role / Device Role / Timing Role: High-frequency (100–300 kHz) power switch with low Q_gd/Q_gs for ZVS transition control.

Use Value: 65 ns t_rr and soft-recovery diode minimize reverse recovery loss, improving full-load efficiency by 1.2%.

Traction Inverter (48 V eAxle)

Start-Stop Battery Management System

Use Scenario: Phase-leg switching in compact in-wheel motor controller with space-constrained cooling.

IC Role / Device Role / Timing Role: High-current, high-temperature switch with integrated diode for regenerative braking energy recovery.

Use Value: 0.7 K/W R_thJC allows direct baseplate mounting, reducing thermal interface layers and enabling 20% higher power density.

Use Scenario: Load switch controlling battery disconnect and pre-charge sequencing during cold cranking.

IC Role / Device Role / Timing Role: Robust main isolation FET with avalanche energy rating for transient overvoltage protection.

Use Value: 330 mJ E_AS withstands ISO 7637-2 Pulse 5a (load dump) without external TVS, simplifying BOM.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IAUT220N08S5N022ATMA1	220 A I_D, 2.2 mΩ R_DS(on), same PG-HSOF-8-1 package	Slightly higher current rating; identical footprint and drive requirements	Select when peak system current exceeds 200 A but thermal headroom remains constrained
IPB180N08S5H5ATMA1	180 A I_D, 2.5 mΩ R_DS(on), same package, no Kelvin source	Lacks Kelvin source; lower current rating; lower cost	Choose where current sensing is implemented externally or via shunt resistor

Compared with IAUT220N08S5N022ATMA1, this part trades 20 A current headroom for tighter R_DS(on) tolerance control; versus IPB180N08S5H5ATMA1, it adds Kelvin sensing and +22 A capacity at modest cost premium-critical for EPS and inverter closed-loop accuracy.

Availability

IAUT200N08S5N023ATMA1 is available at Aetrix Electronics and suitable for electric power steering, 48 V mild hybrid DC-DC conversion, and traction inverter applications requiring stable component supply across automotive production lifecycles.

Supply support for IAUT200N08S5N023ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D centers focused on electrification and digitalization.

This device belongs to the OptiMOS™-5 automotive power transistor family, engineered specifically for high-efficiency, high-reliability 48 V boardnet and e-mobility applications demanding AEC-Q101 compliance and extended temperature operation.

FAQ

What is the maximum allowable gate-source voltage for IAUT200N08S5N023ATMA1?

The absolute maximum V_GS is ±20 V. Operation beyond ±16 V risks permanent gate oxide damage. Recommended drive range is 0 V to 10 V for full enhancement with margin; gate drivers must clamp negative spikes below −5 V to prevent parasitic turn-on during fast dV/dt transitions.

Does IAUT200N08S5N023ATMA1 include an integrated body diode, and what are its key parameters?

Yes, it features a monolithic fast-recovery body diode rated for 200 A continuous forward current and 800 A pulsed current. Key specs include 1.2 V V_SD at 100 A and 25 °C, 65 ns reverse recovery time, and 110 nC Q_rr, enabling efficient synchronous rectification in hard- and soft-switched topologies.

How is the Kelvin source terminal (Pin 3) intended to be used in circuit layout?

Pin 3 is a dedicated low-current sense path tied directly to the source metallization inside the die. It must be routed separately from high-current source traces (Pins 5/6) and connected to the gate driver's current-sense amplifier reference. This eliminates IR drop error, enabling accurate R_DS(on)-based current monitoring within ±2% accuracy.

Is IAUT200N08S5N023ATMA1 suitable for use in non-automotive industrial applications?

Yes-its 175 °C T_j, 100% avalanche testing, and RoHS-compliant green packaging make it viable for industrial motor drives, UPS systems, and solar inverters. However, AEC-Q101 qualification does not imply automotive-grade quality assurance outside automotive supply chains; industrial users should validate against IEC 60747-9 and perform application-specific stress screening.

IAUT200N08S5N023ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 200A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 2.3mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 130µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7670 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-8-1

IAUT200N08S5N023ATMA1 FAQ

1.How can I place an order for IAUT200N08S5N023ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUT200N08S5N023ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IAUT200N08S5N023ATMA1 reliable?

The price and inventory of IAUT200N08S5N023ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUT200N08S5N023ATMA1 is usually 5 days.

3.What payment methods are accepted for IAUT200N08S5N023ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUT200N08S5N023ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IAUT200N08S5N023ATMA1?

IAUT200N08S5N023ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUT200N08S5N023ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUT200N08S5N023ATMA1?

For technical support, including IAUT200N08S5N023ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUT200N08S5N023ATMA1 requirements.

6.How does Aetrix verify that IAUT200N08S5N023ATMA1 is sourced from the original manufacturer or authorized distributors?

All IAUT200N08S5N023ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUT200N08S5N023ATMA1 meets industry standards.

7.What is the process for return or replacement of IAUT200N08S5N023ATMA1?

All IAUT200N08S5N023ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUT200N08S5N023ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUT200N08S5N023ATMA1 part is unused and in its original packaging.

Return procedure for IAUT200N08S5N023ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …