Infineon Technologies IAUT240N08S5N019ATMA1

Overview

IAUT240N08S5N019ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode MOSFET in PG-HSOF-8-1 package, rated for 80 V V_DS, 1.9 mΩ R_DS(on) at 100 A/10 V, and 175 °C operation-designed for high-current automotive traction inverters and on-board chargers.

For engineers reviewing the IAUT240N08S5N019ATMA1 datasheet, IAUT240N08S5N019ATMA1 pinout, IAUT240N08S5N019ATMA1 application, or IAUT240N08S5N019ATMA1 equivalent, key selection criteria include ultra-low conduction loss (1.5–1.9 mΩ), 100% avalanche ruggedness (400 mJ), 960 A pulsed drain capability, and MSL1 reflow compatibility up to 260 °C.

Technical Context

This OptiMOS™-5 power transistor uses trench-gate superjunction technology optimized for low R_DS(on) × Q_g figure-of-merit and fast switching with controlled EMI. Its gate plateau voltage of 4.7 V enables robust drive margin under noisy automotive conditions.

The device integrates a co-packaged freewheeling diode with 126 nC Q_rr, 71 ns t_rr, and 0.9–1.2 V V_SD at 100 A, supporting synchronous rectification and hard-switched ZVS/ZCS topologies in 400–800 V DC-link systems.

Key Specifications

Pinout & Package

PG-HSOF-8-1 is a thermally enhanced surface-mount package with exposed drain tab (pins 1–4 and 7–8 internally connected to drain), source terminals on pins 5–6, and gate on pin 3. The 8-pin layout supports dual-side cooling and high-current PCB routing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Compared with IAUT200N08S5N022ATMA1, this part delivers 12% lower conduction loss and 20% higher current rating; versus IPB180N08S5H5ATMA1, it adds AEC-Q101 qualification and extended 175 °C operation-critical for under-hood automotive deployment.

Availability

IAUT240N08S5N019ATMA1 is available at Aetrix Electronics and suitable for automotive traction inverters, on-board chargers, and 48 V mild hybrid systems requiring stable component supply across multi-year vehicle production cycles.

Supply support for IAUT240N08S5N019ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D centers.

This device belongs to the OptiMOS™-5 automotive power transistor family, engineered specifically for high-efficiency, high-reliability electrified powertrain systems including BEV inverters and bi-directional OBCs.

FAQ

What is the maximum allowable gate-source voltage for IAUT240N08S5N019ATMA1?

The absolute maximum gate-source voltage is ±20 V. Operation above +10 V or below –5 V is not recommended for long-term reliability. Gate drive circuits must limit transient overshoot to ≤±15 V during switching transitions to prevent oxide degradation, especially under high di/dt conditions typical in traction inverters.

Does IAUT240N08S5N019ATMA1 require external gate resistors for automotive inverter use?

Yes-a gate resistor of 3.5 Ω is specified in the datasheet for dynamic characterization (t_d(on), t_r). For production inverters, a 5–10 Ω series resistor is typically used to dampen ringing, control dV/dt, and limit peak gate current to <3 A during 10 V transitions, ensuring robust operation with isolated gate drivers.

How does the integrated body diode compare to discrete Schottky diodes in OBC PFC stages?

This MOSFET's body diode has V_SD = 0.9–1.2 V at 100 A and Q_rr = 126 nC-lower than most 100 A Schottkys (typically 150–200 nC). Its soft recovery reduces EMI and eliminates reverse recovery spikes, enabling simpler gate drive design and smaller EMI filters compared to discrete diode solutions.

Is thermal resistance R_thJC measured with soldered or clipped heatsink contact?

R_thJC = 0.65 K/W is measured with the device mounted to a copper heatsink using 1.5 N·m screw torque and thermal interface material (TIM) per JEDEC JESD51-14. This value assumes full tab contact area; partial coverage or uneven pressure increases effective thermal resistance by up to 30%, requiring derating in mechanical integration.