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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IAUTN06S5N008ATMA1

Name: IAUTN06S5N008ATMA1
Brand: Infineon Technologies
SKU: IAUTN06S5N008ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IAUTN06S5N008ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: IAUTN06S5N008ATMA1.pdf

Description:: MOSFET_)40V 60V)

Quantity:: RFQ Add To RFQ list

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Inventory:6,000

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Product details

Overview

IAUTN06S5N008ATMA1 from Infineon is an automotive-grade N-channel enhancement-mode power MOSFET in PG-HSOF-8-1 package, rated for 60 V V_DS, 0.76 mΩ R_DS(on) at 100 A, and 510 A chip-limited continuous drain current. It operates up to 175 °C junction temperature, supports 100% single-pulse avalanche testing, and is qualified per AEC-Q101 with MSL1 reflow capability.

For engineers reviewing the IAUTN06S5N008ATMA1 datasheet, IAUTN06S5N008ATMA1 pinout, IAUTN06S5N008ATMA1 application, or IAUTN06S5N008ATMA1 equivalent, key selection criteria include its low R_DS(on) for high-current motor drive stages, robust thermal performance under sustained load, and validated reliability for under-hood automotive power switching.

Technical Context

This OptiMOS™ 5 device uses trench-based silicon technology optimized for high-current, low-voltage automotive power conversion. Its gate threshold voltage (2.2–3.0 V) enables direct drive from standard 3.3 V/5 V microcontrollers, while the 4.1 V gate plateau voltage ensures stable Miller region control during switching.

The MOSFET integrates a co-packaged body diode with 57–86 ns reverse recovery time and 64–128 nC Q_rr, supporting synchronous rectification and freewheeling in DC-DC converters and motor H-bridges without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 48 V battery systems and transient clamping in automotive loads
R_DS(on)	0.76 mΩ @ V_GS=10 V, I_D=100 A - Enables <1 W conduction loss at 100 A, critical for high-efficiency traction inverters
I_D (chip-limited)	510 A - Sustained current capability defined by die thermal limits, not package alone
T_j max	175 °C - Supports operation in engine bay environments without derating below peak ambient
E_AS	350 mJ - Single-pulse avalanche energy rating validates ruggedness against inductive kickback in solenoid/motor control
Q_g	273 nC - Total gate charge determines driver strength requirement for <100 ns switching transitions
C_iss	20.28 nF - Input capacitance impacts gate drive loop stability and EMI filtering design in high-frequency PWM

Pinout & Package

PG-HSOF-8-1 is a thermally enhanced surface-mount package with exposed drain tab on bottom side for direct PCB thermal coupling. The 8-pin layout features dual-source pins (pins 1–3, 5–7), gate (pin 4), and drain (tab).

Pin/Terminal	Circuit Role	Design Meaning
Tab (bottom)	Drain (D)	Primary high-current output path; electrically and thermally connected to PCB copper pour
Pins 1, 2, 3	Source (S)	Low-side return path; parallel routing reduces source inductance in high-di/dt switching
Pin 4	Gate (G)	Control input requiring <273 nC charge; sensitive to layout-induced ringing due to low threshold
Pins 5, 6, 7	Source (S)	Additional source connections to minimize common-source inductance and improve current sharing
Pin 8	No Connect / Reserved	Not internally bonded; left floating or tied to source per layout best practice

Key Features

Feature	Design Value
AEC-Q101 qualification + extended electrical test coverage	Validated for automotive safety-critical functions including EPS and ADAS power stages
MSL1 rating (260 °C peak reflow)	Compatible with standard lead-free SMT assembly without moisture sensitivity concerns
100% single-pulse avalanche tested	Guarantees robustness against unclamped inductive switching events in motor drives
Optimized C_iss/C_oss ratio (5.1:1)	Reduces switching losses and improves hard-switching efficiency in 20–100 kHz applications
Body diode with Q_rr = 128 nC max	Enables reliable freewheeling in half-bridge configurations without external diode

Applications

Electric Power Steering (EPS)

Automotive DC-DC Converters

Use Scenario: High-current bidirectional motor control in column-assist and rack-assist EPS modules.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter bridge, handling >300 A peak phase current.

Use Value: 0.76 mΩ R_DS(on) minimizes heat generation during sustained assist torque, enabling compact heatsink design.

Use Scenario: Primary-side synchronous rectifier in 48 V–12 V bidirectional DC-DC converters for mild hybrid vehicles.

IC Role / Device Role / Timing Role: High-side and low-side power switch operating at 50–100 kHz PWM frequency.

Use Value: 273 nC Q_g and 4.1 V plateau support precise gate timing control for ZVS implementation and reduced switching loss.

Onboard Charger (OBC) Input Stage

Brake-by-Wire Actuators

Use Scenario: AC-DC PFC boost switch in 6.6 kW OBCs interfacing with 400 V battery systems.

IC Role / Device Role / Timing Role: Fast-switching, high-current boost transistor with integrated body diode for continuous conduction mode.

Use Value: 350 mJ E_AS withstands line surge transients and inductor saturation events during grid fault conditions.

Use Scenario: High-reliability solenoid driver in electro-hydraulic brake actuators requiring fail-safe current limiting.

IC Role / Device Role / Timing Role: Protected high-side switch with overcurrent and thermal shutdown via external controller feedback.

Use Value: 175 °C T_j max allows uninterrupted operation during brake system thermal soak tests per ISO 26262 ASIL-B requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar automotive N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IAUZ40N04S5L027ATMA1	40 V V_DS, 0.27 mΩ R_DS(on), same PG-HSOF-8-1 package	Better suited for 24 V/48 V low-voltage subsystems (e.g., HVAC blowers), not 60 V battery interface	Select when system bus voltage ≤40 V and lower R_DS(on) is prioritized over voltage margin
IPB180N04S4H5ATMA1	40 V V_DS, 0.45 mΩ R_DS(on), TO-263-7 package	Larger footprint, higher thermal resistance (R_thJC = 0.55 K/W), no AEC-Q101 automotive qualification	Consider only for non-automotive industrial 40 V applications where cost outweighs qualification and thermal performance

Compared with IAUZ40N04S5L027ATMA1 and IPB180N04S4H5ATMA1, IAUTN06S5N008ATMA1 uniquely balances 60 V rating, ultra-low on-resistance, and full AEC-Q101 compliance-making it the only qualified option for 48 V battery-connected high-power switching where voltage headroom and automotive reliability are mandatory.

Availability

IAUTN06S5N008ATMA1 is available at Aetrix Electronics and suitable for electric power steering (EPS), onboard chargers (OBC), and brake-by-wire actuator designs requiring stable component supply across automotive production lifecycles.

Supply support for IAUTN06S5N008ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This part belongs to the OptiMOS™ 5 automotive power MOSFET product line, engineered specifically for high-current, high-temperature switching in safety-critical vehicle subsystems such as steering, braking, and energy conversion.

FAQ

What is the maximum allowable PCB copper area for thermal relief under the drain tab?

The PG-HSOF-8-1 package requires ≥200 mm² of 2-oz copper on the primary layer beneath the tab, with ≥4 thermal vias (0.3 mm diameter, filled or capped) connecting to inner ground planes. This achieves the specified 0.42 K/W R_thJC and prevents localized hot spots above 150 °C during 510 A transient loads.

Does IAUTN06S5N008ATMA1 support paralleling for higher current capacity?

Yes-its positive temperature coefficient of R_DS(on) (0.9 mΩ at 175 °C vs. 0.76 mΩ at 25 °C) enables stable current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and individual gate resistors (≥5 Ω) to suppress oscillation between devices.

Is the body diode suitable for continuous reverse conduction in synchronous rectification?

Yes-the diode is rated for 510 A continuous forward current at T_C=25 °C and exhibits soft reverse recovery (t_rr = 57–86 ns, Q_rr = 64–128 nC), making it appropriate for synchronous rectification in 48 V DC-DC converters up to 100 kHz without external diode supplementation.

What gate drive voltage range ensures safe and efficient operation?

V_GS must be maintained between 6 V (minimum for full enhancement) and 15 V (absolute maximum per datasheet). Operation at 10 V delivers optimal R_DS(on) and switching speed; exceeding 15 V risks gate oxide degradation, while <6 V increases conduction loss and thermal stress under load.

IAUTN06S5N008ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IAUTN06S5N008ATMA1 FAQ

1.How can I place an order for IAUTN06S5N008ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUTN06S5N008ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IAUTN06S5N008ATMA1 reliable?

The price and inventory of IAUTN06S5N008ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUTN06S5N008ATMA1 is usually 5 days.

3.What payment methods are accepted for IAUTN06S5N008ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUTN06S5N008ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IAUTN06S5N008ATMA1?

IAUTN06S5N008ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUTN06S5N008ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUTN06S5N008ATMA1?

For technical support, including IAUTN06S5N008ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUTN06S5N008ATMA1 requirements.

6.How does Aetrix verify that IAUTN06S5N008ATMA1 is sourced from the original manufacturer or authorized distributors?

All IAUTN06S5N008ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUTN06S5N008ATMA1 meets industry standards.

7.What is the process for return or replacement of IAUTN06S5N008ATMA1?

All IAUTN06S5N008ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUTN06S5N008ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUTN06S5N008ATMA1 part is unused and in its original packaging.

Return procedure for IAUTN06S5N008ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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