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Infineon Technologies IAUTN06S5N008GATMA1

Part No.:
IAUTN06S5N008GATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
-
Datasheet:
AetrixIAUTN06S5N008GATMA1.pdf
Description:
MOSFET_)40V 60V)
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,690

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Product details

Overview

IAUTN06S5N008GATMA1 from Infineon is an automotive-grade N-channel enhancement-mode power MOSFET in PG-HSOG-8-1 package, rated for 60 V VDS, 0.78 mΩ RDS(on) at VGS = 10 V, and 504 A chip-limited continuous drain current. It supports high-current motor drives and DC-DC converters in engine control units and battery management systems.

For engineers reviewing the IAUTN06S5N008GATMA1 datasheet, IAUTN06S5N008GATMA1 pinout, IAUTN06S5N008GATMA1 application, or IAUTN06S5N008GATMA1 equivalent, key selection criteria include its AEC-Q101 qualification, 175 °C operating temperature, MSL1 reflow rating, 100% avalanche testing, and low gate charge (Qg = 273 nC) for fast switching in high-efficiency traction inverters and 48 V mild-hybrid systems.

Technical Context

This OptiMOS™ 5 device uses trench-gate superjunction technology optimized for automotive thermal and reliability demands. Its RDS(on) of 0.78 mΩ at 100 A/10 V and Qgd of 54 nC enable high-frequency synchronous rectification with minimal conduction and switching losses.

The MOSFET integrates a robust body diode with trr = 86 ns and Qrr = 128 nC, supporting hard-switched topologies. Thermal resistance RthJC = 0.42 K/W ensures efficient heat transfer to the PCB copper pad under sustained 504 A load conditions.

Key Specifications

ParameterValue and Actual Design Meaning
VDS60 V - Supports 48 V automotive bus with 25 % safety margin against transients.
RDS(on)0.78 mΩ @ VGS = 10 V, ID = 100 A - Enables <1.5 W conduction loss at 100 A, critical for compact power stages.
ID (chip-limited)504 A - Allows single-device implementation in high-power starter generators and PTC heaters.
Qg273 nC - Reduces gate drive power requirement and enables 100 kHz+ PWM operation with standard drivers.
EAS350 mJ - Withstands repetitive inductive switching events without failure in motor phase-legs.
Tj max175 °C - Sustains operation in under-hood environments with no derating up to ambient 125 °C.
MSL LevelMSL1 @ 260 °C - Compatible with standard lead-free reflow profiles without moisture sensitivity concerns.

Pinout & Package

PG-HSOG-8-1 is a thermally enhanced surface-mount package with exposed source-tab on bottom side and 8-pin layout optimized for high-current PCB routing and low-inductance gate loops.

Pin/TerminalCircuit RoleDesign Meaning
1–3, 5–7SourceParallel low-impedance return path; connects directly to large copper pour for thermal and current handling.
4GateHigh-impedance control input requiring <3.5 Ω series resistance to damp ringing during fast switching.
8DrainMain power output terminal; electrically tied to exposed metal tab for direct heatsinking to PCB ground plane.
Tab (bottom)DrainPrimary thermal and current path; must be soldered to ≥200 mm² 2-oz copper area for RthJC = 0.42 K/W performance.

Key Features

FeatureDesign Value
AEC-Q101 qualified beyond standard requirementsExtended electrical testing and lifetime validation ensure >15-year field reliability in safety-critical ECU modules.
100 % avalanche testedEach unit passes single-pulse EAS = 350 mJ stress test, eliminating latent failures in inductive load switching.
Optimized gate charge profileQgd/Qgs ratio of ~0.7 enables clean Miller plateau transition and reduces shoot-through risk in half-bridge designs.
Robust body diodetrr = 86 ns and soft recovery reduce EMI and voltage overshoot during freewheeling in BLDC inverters.
175 °C operation with MSL1Enables placement near heat sources (e.g., IGBT modules) without thermal derating or special assembly processes.

Applications

Engine Control Unit (ECU) High-Side Driver48 V Mild-Hybrid DC-DC Converter

Use Scenario: Switching 48 V battery power to fuel injector solenoids and turbocharger actuators in diesel ECUs.

IC Role / Device Role / Timing Role: High-side power switch controlling 30 A peak loads with <1 µs turn-on delay and 58 ns rise time.

Use Value: Low RDS(on) minimizes voltage drop across injector supply rail, ensuring precise pulse-width modulation at full load.

Use Scenario: Primary-side synchronous rectifier in bidirectional 3 kW LLC resonant converter between 12 V and 48 V domains.

IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET operating at 200 kHz with zero-voltage switching assistance.

Use Value: 273 nC total gate charge allows gate driver ICs to achieve <100 ns dead-time control, maximizing conversion efficiency above 97 %.

Electric Power Steering (EPS) Motor InverterPTC Heater Module Switch

Use Scenario: Half-bridge leg in 3-phase inverter driving 1.5 kW brushless motor for steering assist torque generation.

IC Role / Device Role / Timing Role: Low-side switching element with integrated body diode conducting reverse current during PWM freewheeling.

Use Value: 128 nC reverse recovery charge and soft recovery reduce dv/dt-induced gate oscillation and EMI filter size by 30 %.

Use Scenario: Single-pole high-current switch enabling 5 kW resistive heating in cabin climate control systems.

IC Role / Device Role / Timing Role: Direct replacement for mechanical relay with 504 A continuous current capability and solid-state reliability.

Use Value: 0.42 K/W junction-to-case thermal resistance enables direct mounting to aluminum heatsink, eliminating forced-air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar automotive power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IAUTN06S5N008GATMA2Same die and package; differs only in tape-and-reel packaging configuration (1,000 pcs vs. 2,000 pcs per reel).No functional difference; identical electrical, thermal, and reliability specs.Select based on production line feeder compatibility and lot-size planning.
IPB180N04S4H5ATMA140 V VDS, 1.8 mΩ RDS(on), TSDSO-8 package, lower current rating (180 A).Suitable for 12 V/24 V subsystems but not 48 V main power rails due to voltage margin limitation.Choose only when system bus voltage ≤32 V and thermal budget permits higher RDS(on).

Compared with IAUTN06S5N008GATMA1, the ATMA2 variant offers identical performance in alternate packaging, while the IPB180N04S4H5ATMA1 trades voltage headroom and current capacity for smaller footprint and lower cost in lower-voltage automotive sub-systems.

Availability

IAUTN06S5N008GATMA1 is available at Aetrix Electronics and suitable for engine control units, 48 V mild-hybrid converters, and electric power steering inverters requiring stable component supply across multi-year automotive production cycles.

Supply support for IAUTN06S5N008GATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This part belongs to the OptiMOS™ 5 automotive power MOSFET product line, engineered specifically for high-current, high-temperature switching in next-generation 48 V architectures and electrified powertrains.

FAQ

What is the maximum allowable PCB copper area for optimal thermal performance?

The PG-HSOG-8-1 package requires a minimum 200 mm² of 2-ounce copper connected to the drain tab to achieve the specified RthJC = 0.42 K/W. Larger copper areas (≥400 mm²) with thermal vias to internal ground planes further reduce steady-state junction temperature by up to 15 °C at 504 A.

Does this MOSFET require external gate resistors in half-bridge configurations?

Yes - a 3.5 Ω non-inductive gate resistor is recommended per the datasheet's switching characterization conditions. This value damps gate loop oscillation, controls dV/dt during turn-on, and prevents unintended Miller-induced turn-on when used with high-side drivers in bridge topologies.

Is the body diode suitable for continuous freewheeling in BLDC motor drives?

Yes - the body diode is fully characterized with IS = 504 A continuous and trr = 86 ns at 100 A. Its soft recovery behavior and low Qrr minimize voltage spikes and EMI, making it suitable for unidirectional freewheeling in trapezoidal commutation without external Schottky parallel devices.

How does the 175 °C rating impact system-level derating rules?

The 175 °C maximum junction temperature allows full-rated current operation up to 125 °C ambient when mounted on a properly designed PCB. No additional derating is required below that ambient point, simplifying thermal design versus legacy 150 °C-rated MOSFETs that demand 20–30 % current reduction at 105 °C.

IAUTN06S5N008GATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
-
Technology:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

IAUTN06S5N008GATMA1 FAQ

1.How can I place an order for IAUTN06S5N008GATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUTN06S5N008GATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IAUTN06S5N008GATMA1 reliable?

The price and inventory of IAUTN06S5N008GATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUTN06S5N008GATMA1 is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUTN06S5N008GATMA1 transactions.

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IAUTN06S5N008GATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUTN06S5N008GATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUTN06S5N008GATMA1?

For technical support, including IAUTN06S5N008GATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUTN06S5N008GATMA1 requirements.

6.How does Aetrix verify that IAUTN06S5N008GATMA1 is sourced from the original manufacturer or authorized distributors?

All IAUTN06S5N008GATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUTN06S5N008GATMA1 meets industry standards.

7.What is the process for return or replacement of IAUTN06S5N008GATMA1?

All IAUTN06S5N008GATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUTN06S5N008GATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUTN06S5N008GATMA1 part is unused and in its original packaging.

Return procedure for IAUTN06S5N008GATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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