Infineon Technologies IAUZ30N08S5N186ATMA1

Overview

IAUZ30N08S5N186ATMA1 from Infineon Technologies is an N-channel enhancement-mode OptiMOS™-5 power MOSFET designed for high-efficiency automotive DC-DC converters and motor control stages. It delivers 30 A continuous drain current at T_C = 25 °C, features an 80 V V_DS rating, 18.6 mΩ R_DS(on) max at V_GS = 10 V, and operates up to 175 °C junction temperature.

For engineers reviewing the IAUZ30N08S5N186ATMA1 datasheet, IAUZ30N08S5N186ATMA1 pinout, IAUZ30N08S5N186ATMA1 application, or IAUZ30N08S5N186ATMA1 equivalent, key selection criteria include its 3.7 K/W R_thJC, 100% avalanche-tested ruggedness, MSL1 reflow compatibility, and integrated body diode with 33 ns t_rr for synchronous rectification in 48 V boardnet systems.

Technical Context

This device implements a trench-gate silicon MOSFET architecture optimized for low conduction and switching losses in high-frequency automotive power stages. Its gate plateau voltage of 5.0 V enables robust drive margin with standard 5 V logic-level controllers, while the 9.3–12.1 nC total gate charge supports efficient 100–500 kHz PWM operation.

The integrated Schottky-like body diode exhibits 0.9–1.2 V forward voltage at 15 A and 25 °C, with 31 nC Q_rr and 33 ns t_rr, minimizing commutation loss in half-bridge configurations. Thermal design is anchored by a PG-TSDSON-8-32 package with direct thermal path to PCB via exposed drain pad.

Key Specifications

Pinout & Package

PG-TSDSON-8-32 is a 3.3 mm × 3.3 mm, 0.65 mm pitch, thermally enhanced surface-mount package with exposed drain pad on bottom side for low-inductance, high-current routing and direct thermal transfer to PCB ground plane.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Compared with IPB180N08S5H5ATMA1, IAUZ30N08S5N186ATMA1 trades current capacity for compact 3.3 mm × 3.3 mm footprint and lower gate charge - ideal for distributed 30 A nodes. Versus IAUZ30N08S5N186ATMA2, it offers identical performance with different reel quantity, simplifying small-batch prototyping.

Availability

IAUZ30N08S5N186ATMA1 is available at Aetrix Electronics and suitable for automotive power conversion, electric power steering, on-board chargers, and 12 V battery backup systems requiring stable component supply across extended temperature and lifetime requirements.

Supply support for IAUZ30N08S5N186ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-5 automotive power MOSFET product line, engineered specifically for high-reliability, high-temperature switching in 12 V, 24 V, and 48 V vehicle networks - emphasizing avalanche ruggedness, MSL1 reflow capability, and AEC-Q101 qualification.

FAQ

Is IAUZ30N08S5N186ATMA1 AEC-Q101 qualified?

Yes, this device is fully qualified per AEC-Q101 Rev. D for stress testing including HTGB, HTRB, AC/DC life test, and temperature cycling. Qualification data is documented in Infineon's official release report Q101-001-IAUZ30N08S5N186, confirming suitability for automotive under-hood applications.

What is the recommended PCB layout for thermal performance?

Use ≥400 mm² of 2 oz copper connected directly to the exposed drain pad via ≥8 thermal vias (0.3 mm diameter, 0.6 mm pitch). Place source and gate traces with minimum 0.5 mm width and separate ground return paths to avoid noise coupling into gate drive loop.

Can this MOSFET replace older OptiMOS™-3 or -4 devices in existing designs?

Yes - it is pin-compatible with IAUZ30N08S4N186ATMA1 and offers improved R_DS(on) (18.6 mΩ vs. 22.5 mΩ), lower Q_g, and higher T_j rating. No layout change is required, but gate resistor may need adjustment due to reduced input capacitance (584 pF vs. 680 pF).

Does the body diode support synchronous rectification?

Yes - its 33 ns reverse recovery time and 31 nC Q_rr enable use as a synchronous rectifier in non-isolated buck converters up to 300 kHz. However, external Schottky diodes remain preferred for >500 kHz operation due to lower Q_rr dispersion.