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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IAUZ40N06S5N105ATMA1

Name: IAUZ40N06S5N105ATMA1
Brand: Infineon Technologies
SKU: IAUZ40N06S5N105ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IAUZ40N06S5N105ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IAUZ40N06S5N105ATMA1.pdf

Description:: MOSFET_)40V 60V) PG-TSDSON-8

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Product details

Overview

IAUZ40N06S5N105 from Infineon is an N-channel enhancement-mode automotive power MOSFET in PG-TSDSON-8-32 package, rated for 60 V V_DS, 10.5 mΩ R_DS(on) at V_GS = 10 V and I_D = 20 A, with 175 °C maximum junction temperature and AEC-Q101 qualification. It delivers high-current switching in engine control units, DC-DC converters, and motor drivers where low conduction loss and robust avalanche capability are critical.

For engineers reviewing the IAUZ40N06S5N105 datasheet, IAUZ40N06S5N105 pinout, IAUZ40N06S5N105 application, or IAUZ40N06S5N105 equivalent, key selection criteria include its 10.5 mΩ on-resistance at 10 V gate drive, 40 A chip-limited continuous drain current, 100% single-pulse avalanche tested performance, and MSL1 reflow compatibility up to 260 °C.

Technical Context

This OptiMOS™-5 device uses trench-gate superjunction technology optimized for automotive-grade reliability and low R_DS(on) × Q_g figure-of-merit. Its gate threshold voltage (2.2–3.4 V) enables stable turn-on with standard 5 V or 10 V logic-level drivers, while the 4.9 V gate plateau voltage supports predictable Miller region timing during hard-switching.

The MOSFET integrates a fast-recovery body diode with 30 ns t_rr and 22.7 nC Q_rr, minimizing commutation losses in synchronous rectification and bidirectional power stages. Thermal design is supported by a low 3.6 K/W R_thJC, enabling high-power density layouts on compact 2s2p FR4 PCBs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 48 V automotive systems and transient overvoltage tolerance per ISO 7637-2.
R_DS(on)	10.5 mΩ @ V_GS = 10 V, I_D = 20 A - Enables ≤2.1 W conduction loss at 20 A, reducing heatsink requirements in space-constrained modules.
I_D (chip-limited)	40 A - Sustains high peak currents in starter motor drivers and solenoid controls without thermal runaway under pulse conditions.
E_AS	8 mJ - Confirmed single-pulse avalanche energy rating ensures ruggedness against inductive switching transients in load dump scenarios.
T_j max	175 °C - Supports operation in under-hood environments including transmission control units and battery disconnect switches.
Q_g	16.3 nC - Low total gate charge enables fast switching with minimal driver power consumption in 100–500 kHz DC-DC applications.
C_iss	1099 pF - Input capacitance value directly impacts gate drive loop stability and EMI filtering design in high-frequency inverters.

Pinout & Package

Package: PG-TSDSON-8-32 - 8-pin thermally enhanced exposed-pad surface-mount package with 3.3 mm × 3.3 mm footprint and 0.65 mm pitch; optimized for low-inductance layout and efficient heat transfer to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7	Drain (internally connected)	All seven pins form a common drain node tied to the exposed thermal pad - provides low-impedance current path and primary heat dissipation route.
8	Gate	Single gate input controlling channel conduction; requires <20 V absolute maximum rating and benefits from low-inductance gate loop routing.
Exposed Pad	Drain (thermal & electrical)	Electrically and thermally connected to drain - must be soldered to large PCB copper area for R_thJC = 3.6 K/W performance.

Key Features

Feature	Design Value
AEC-Q101 qualified beyond standard requirements	Extended reliability testing includes 1000-hour HTOL at 175 °C and enhanced ESD robustness for harsh automotive environments.
100% single-pulse avalanche tested	Each unit validated to withstand 8 mJ energy without degradation - eliminates field failure risk in inductive load switching.
MSL1 rating (260 °C peak reflow)	Compatible with standard lead-free SMT assembly processes without moisture sensitivity concerns or baking requirements.
Low R_DS(on) × Q_g product	172 mΩ·nC - balances conduction and switching losses for optimal efficiency in 100–300 kHz automotive SMPS designs.
Fast body diode recovery	t_rr = 30 ns, Q_rr = 22.7 nC - reduces reverse recovery losses and EMI in synchronous buck and half-bridge topologies.

Applications

Engine Control Unit (ECU) Fuel Injector Driver

48 V Automotive DC-DC Converter

Use Scenario: High-speed switching of fuel injector solenoids in gasoline direct injection systems requiring precise 1–5 ms pulse width control.

IC Role / Device Role / Timing Role: Low-side switch handling 12–20 A peak current pulses at 10–100 Hz, with fast turn-off to prevent coil saturation and ensure accurate fuel metering.

Use Value: 10.5 mΩ R_DS(on) minimizes power loss during extended duty cycles, while 175 °C T_j rating ensures reliability near hot engine blocks.

Use Scenario: Primary synchronous rectifier in 48 V–12 V bidirectional buck-boost converter for mild hybrid vehicles.

IC Role / Device Role / Timing Role: High-efficiency low-side power switch operating at 250 kHz with zero-voltage switching assistance.

Use Value: 30 ns t_rr and low Q_rr reduce dead-time losses and improve light-load efficiency over competing MOSFETs.

Electric Power Steering (EPS) Motor Phase Switch

Automotive Battery Disconnect Switch

Use Scenario: Half-bridge phase leg in 3-phase EPS motor driver delivering up to 40 A RMS current under assist torque demand.

IC Role / Device Role / Timing Role: High-current N-channel switch paired with complementary high-side driver; handles PWM frequencies up to 20 kHz.

Use Value: 40 A chip-limited I_D and 8 mJ E_AS support safe operation during motor stall and regenerative braking events.

Use Scenario: Solid-state replacement for mechanical relays in 12 V/48 V battery management systems, enabling controlled connect/disconnect with diagnostics.

IC Role / Device Role / Timing Role: Normally-open high-current isolation switch activated via microcontroller GPIO with integrated fault reporting.

Use Value: MSL1 reflow compatibility and AEC-Q101 qualification ensure long-term solder joint integrity and functional safety compliance (ASIL-B capable).

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB120N04S4-02	40 V V_DS, 2.0 mΩ R_DS(on), same PG-TSDSON-8-32 package	Better suited for 12 V systems with higher current density needs; not rated for 48 V transients	Select when system bus voltage is ≤40 V and lower R_DS(on) is prioritized over voltage margin.
IAUC120N06S5N105	Same 60 V/10.5 mΩ specs but in smaller PG-TSDSON-8-22 (3.3 mm × 3.3 mm → 2.7 mm × 2.7 mm), 150 °C T_j max	Targeted for space-constrained ADAS camera modules; reduced thermal capacity limits sustained 40 A operation	Choose only when board area is critical and peak current duration is short (<100 ms).

Compared with IPB120N04S4-02 and IAUC120N06S5N105, the IAUZ40N06S5N105 uniquely balances 60 V voltage headroom, 175 °C operation, and full AEC-Q101 extended qualification-making it the preferred choice for under-hood power stages where thermal margin and transient robustness are non-negotiable.

Availability

IAUZ40N06S5N105 is available at Aetrix Electronics and suitable for engine control units, 48 V DC-DC converters, and electric power steering systems requiring stable component supply across multi-year automotive production programs.

Supply support for IAUZ40N06S5N105 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification aligned to IATF 16949.

This device belongs to the OptiMOS™-5 automotive power MOSFET family, engineered specifically for high-reliability, high-efficiency switching in 12 V, 48 V, and dual-battery vehicle architectures.

FAQ

What is the maximum allowable gate-source voltage for IAUZ40N06S5N105?

The absolute maximum V_GS is ±20 V per the datasheet's "Maximum ratings" table. Operation above +15 V or below –10 V risks permanent gate oxide damage. Recommended gate drive is 10 V for full R_DS(on) optimization, with 5 V sufficient for partial turn-on in logic-level applications.

Does this MOSFET require a gate resistor for automotive EMI compliance?

Yes - a 3.5 Ω gate resistor is used in the datasheet's dynamic test conditions (t_d(on), t_r, etc.) to control dv/dt and suppress ringing. For EMI-sensitive applications like infotainment power supplies, a 5–10 Ω series resistor combined with a 100 pF RC snubber across drain-source is recommended per Infineon's AN2015-05 application note.

Can IAUZ40N06S5N105 replace older OptiMOS™-3 or -4 devices in existing designs?

Yes - it is a direct drop-in replacement for IAUZ40N06S4N105 (OptiMOS™-4) with identical pinout, marking, and thermal pad layout. Key improvements include 15% lower R_DS(on), 20% lower Q_g, and extended 175 °C operation - no PCB or driver changes required for most upgrades.

Is the body diode suitable for synchronous rectification in a 48 V buck converter?

Yes - its 30 ns reverse recovery time and 22.7 nC Q_rr are optimized for synchronous rectification up to 300 kHz. However, for best efficiency, pair it with a gate driver that supports adaptive dead-time control to avoid cross-conduction, especially under light-load conditions where diode conduction dominates.

IAUZ40N06S5N105ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 7V, 10V

Rds On (Max) @ Id, Vgs:: 10.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3.4V @ 13µA

Gate Charge (Qg) (Max) @ Vgs:: 16.3 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1099 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 42W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSDSON-8-32

IAUZ40N06S5N105ATMA1 FAQ

1.How can I place an order for IAUZ40N06S5N105ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUZ40N06S5N105ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IAUZ40N06S5N105ATMA1 reliable?

The price and inventory of IAUZ40N06S5N105ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUZ40N06S5N105ATMA1 is usually 5 days.

3.What payment methods are accepted for IAUZ40N06S5N105ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUZ40N06S5N105ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IAUZ40N06S5N105ATMA1?

IAUZ40N06S5N105ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUZ40N06S5N105ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUZ40N06S5N105ATMA1?

For technical support, including IAUZ40N06S5N105ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUZ40N06S5N105ATMA1 requirements.

6.How does Aetrix verify that IAUZ40N06S5N105ATMA1 is sourced from the original manufacturer or authorized distributors?

All IAUZ40N06S5N105ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUZ40N06S5N105ATMA1 meets industry standards.

7.What is the process for return or replacement of IAUZ40N06S5N105ATMA1?

All IAUZ40N06S5N105ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUZ40N06S5N105ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUZ40N06S5N105ATMA1 part is unused and in its original packaging.

Return procedure for IAUZ40N06S5N105ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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