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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IAUZ40N10S5L120ATMA1

Name: IAUZ40N10S5L120ATMA1
Brand: Infineon Technologies
SKU: IAUZ40N10S5L120ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IAUZ40N10S5L120ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IAUZ40N10S5L120ATMA1.pdf

Description:: MOSFET_(75V 120V( PG-TSDSON-8

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Product details

Overview

IAUZ40N10S5L120ATMA1 from Infineon Technologies is an N-channel enhancement-mode logic-level OptiMOS™-5 power MOSFET rated for 100 V V_DS, 12 mΩ R_DS(on) at V_GS = 10 V, 40 A continuous drain current, and 175 °C junction operation-designed for high-efficiency automotive DC-DC converters and motor control stages.

For engineers reviewing the IAUZ40N10S5L120ATMA1 datasheet, IAUZ40N10S5L120ATMA1 pinout, IAUZ40N10S5L120ATMA1 application, or IAUZ40N10S5L120ATMA1 equivalent, key selection criteria include its 12 mΩ on-resistance at 4.5 V gate drive, 100% avalanche-tested ruggedness, MSL1 reflow compatibility, and PG-TSDSON-8-33 thermally enhanced package for high-power-density layouts.

Technical Context

This MOSFET employs a trench-gate superjunction structure optimized for low conduction and switching losses in 12 V–48 V automotive systems. Its logic-level gate threshold (1.2–2.2 V) enables direct drive from microcontrollers and PWM controllers without level-shifting, while the integrated body diode supports synchronous rectification and freewheeling in half-bridge topologies.

The device features tightly controlled dynamic parameters: C_iss = 1589 pF (typ), Q_g = 22.6 nC (max), and t_r/t_f < 1 ns/6 ns-enabling efficient operation up to 500 kHz in hard-switched applications. Thermal resistance R_thJC = 2.4 K/W ensures effective heat transfer to the PCB copper plane in TSDSON-8 layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V battery systems with 2× safety margin against transients
R_DS(on) max @ V_GS = 10 V	12 mΩ - enables ≤4.8 W conduction loss at 20 A, critical for thermal management
I_D continuous @ T_C = 85 °C	40 A - sustains high-current motor phases or DC-DC primary switches on 2s2p FR4 PCB
E_AS single pulse	33 mJ - withstands inductive energy spikes in automotive solenoid or pump drivers
Q_g max	22.6 nC - determines gate driver current requirement (~2.3 A peak for 10 ns rise time)
T_j operating range	−55 °C to +175 °C - qualified for under-hood engine control and transmission modules
R_thJC	2.4 K/W - enables direct thermal coupling to heatsink or copper pour for >50 W dissipation

Pinout & Package

Package: PG-TSDSON-8-33 - thermally enhanced 8-pin exposed-drain DSON with 3.3 mm × 3.3 mm footprint and 0.65 mm pitch, optimized for low-inductance layout and high-current PCB routing.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 6, 7, 8	Drain (D)	Internally connected to large copper paddle; primary current path and thermal interface to PCB
5	Source (S)	Low-side reference node; connects to ground plane and current-sense resistor
Gate (G)	Control input	Pin 5 is source; gate is terminal 1–4/6–8 drain side-gate pad located between pins 4 and 5 per TSDSON-8 outline

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 1.2–2.2 V enables direct MCU GPIO control without external level shifters
100% avalanche tested	Guarantees robustness against inductive switching stress in motor and solenoid loads
MSL1 rating (260 °C)	Supports lead-free reflow assembly without popcorn or delamination risk
Green product (RoHS)	Complies with automotive ELV and EU RoHS directives for end-of-life recyclability
Thermally enhanced TSDSON	Exposed drain paddle reduces R_thJC to 2.4 K/W-critical for compact 48 V traction inverters

Applications

Automotive DC-DC Converters

Electric Power Steering (EPS)

Use Scenario: 12 V–48 V bidirectional buck-boost converter in 48 V mild-hybrid architectures.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch with fast turn-off (t_f = 6 ns) to minimize dead-time losses.

Use Value: 12 mΩ R_DS(on) at 4.5 V gate drive reduces conduction loss by 35% vs. legacy 20 mΩ MOSFETs at same current density.

Use Scenario: Three-phase inverter driving 300–500 W brushless DC motor in column-assist EPS units.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge leg, leveraging low Q_gd (5.0 nC) for clean commutation and reduced shoot-through risk.

Use Value: 175 °C T_j rating allows sustained 40 A operation in sealed steering column enclosures without derating.

Start-Stop Battery Management

Onboard Charger (OBC) Auxiliary Supplies

Use Scenario: Load switch isolating 12 V starter battery during engine cranking events.

IC Role / Device Role / Timing Role: High-current eFuse with fast overcurrent response enabled by low R_DS(on) and tight V_GS(th) distribution.

Use Value: 33 mJ E_AS withstands 20 A inductive kickback from solenoid actuators during cold-cranking transients.

Use Scenario: Primary-side switch in auxiliary 12 V flyback supply powered from OBC's 400 V DC-link.

IC Role / Device Role / Timing Role: Hard-switched 100 V MOSFET operating at 250 kHz with low C_oss (277 pF) to limit capacitive switching loss.

Use Value: C_iss/C_oss ratio of ~5.7 supports stable ZVS initiation in resonant auxiliary supplies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB120N10N5LFATMA1	R_DS(on) = 11.5 mΩ @ 10 V; higher Q_g (28 nC); same PG-TSDSON-8-33 package	Better conduction loss but slower switching; suited for lower-frequency (<200 kHz) motor drives	Select when minimizing conduction loss dominates over switching loss in thermally constrained designs
STL220N10F7	R_DS(on) = 10.5 mΩ @ 10 V; 175 °C rating; different H2PAK-2 package (larger, higher R_thJA)	Higher current capability (220 A pulsed) but larger footprint and inferior thermal performance on FR4	Prefer only when board space permits and system-level thermal design accommodates higher R_thJA

Compared with IPB120N10N5LFATMA1 and STL220N10F7, IAUZ40N10S5L120ATMA1 offers the best balance of low Q_g/R_DS(on) ratio (1.89 nC/mΩ), MSL1 reflow compliance, and validated 175 °C operation-making it optimal for space-constrained, high-frequency automotive power stages.

Availability

IAUZ40N10S5L120ATMA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, electric power steering modules, and start-stop battery management systems requiring stable component supply across extended temperature and lifetime requirements.

Supply support for IAUZ40N10S5L120ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification for AEC-Q101 and ISO/TS 16949 standards.

This part belongs to the OptiMOS™-5 product line-engineered specifically for high-efficiency, high-reliability 12 V–48 V automotive power conversion, emphasizing low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

At T_C = 100 °C, the maximum continuous drain current is derated to approximately 28 A, based on the I_D vs. T_C curve (page 3 of Rev. 1.1 datasheet) and the 40 A rating at T_C = 85 °C with 2s2p FR4 PCB. This reflects thermal limits of the PG-TSDSON-8-33 package under standard JEDEC conditions.

Does this MOSFET require a gate resistor for automotive PWM applications?

Yes-a gate resistor (typically 2.2–10 Ω) is recommended to dampen ringing caused by parasitic inductance in high-di/dt automotive circuits. The device's Q_gd = 5.0 nC and low C_iss make it sensitive to gate oscillation; proper gate resistance ensures reliable turn-on/turn-off timing and prevents unintended conduction during EMI events.

Is the body diode suitable for synchronous rectification in a 48 V buck converter?

Yes-the body diode has V_SD = 0.9–1.1 V at 20 A and t_rr = 38 ns, enabling use in synchronous rectification. However, its Q_rr = 34 nC requires careful dead-time tuning to avoid shoot-through; pairing with a low-Q_rr external Schottky is advised for >300 kHz operation.

What is the gate plateau voltage and why does it matter for drive circuit design?

The gate plateau voltage is 3.1 V (typical), representing the Miller region where V_GS remains nearly constant during dV_DS/dt. This value determines the minimum gate drive voltage needed to fully enhance the channel and impacts gate driver selection-drivers must supply sufficient current to traverse the plateau quickly and minimize switching loss.

IAUZ40N10S5L120ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 46A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 27µA

Gate Charge (Qg) (Max) @ Vgs:: 22.6 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1589 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 62W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSDSON-8-33

IAUZ40N10S5L120ATMA1 FAQ

1.How can I place an order for IAUZ40N10S5L120ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUZ40N10S5L120ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IAUZ40N10S5L120ATMA1 reliable?

The price and inventory of IAUZ40N10S5L120ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUZ40N10S5L120ATMA1 is usually 5 days.

3.What payment methods are accepted for IAUZ40N10S5L120ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUZ40N10S5L120ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IAUZ40N10S5L120ATMA1?

IAUZ40N10S5L120ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUZ40N10S5L120ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUZ40N10S5L120ATMA1?

For technical support, including IAUZ40N10S5L120ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUZ40N10S5L120ATMA1 requirements.

6.How does Aetrix verify that IAUZ40N10S5L120ATMA1 is sourced from the original manufacturer or authorized distributors?

All IAUZ40N10S5L120ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUZ40N10S5L120ATMA1 meets industry standards.

7.What is the process for return or replacement of IAUZ40N10S5L120ATMA1?

All IAUZ40N10S5L120ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUZ40N10S5L120ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUZ40N10S5L120ATMA1 part is unused and in its original packaging.

Return procedure for IAUZ40N10S5L120ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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