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Infineon Technologies IGLR60R340D1XUMA1

Name: IGLR60R340D1XUMA1
Brand: Infineon Technologies
SKU: IGLR60R340D1XUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IGLR60R340D1XUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IGLR60R340D1XUMA1.pdf

Description:: GAN HV

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Product details

Overview

IGLR60R340D1XUMA1 from Infineon is a 600 V, 340 mΩ enhancement-mode GaN power transistor in PG-TSON-8-7 package, featuring 1.2 nC gate charge, 0 nC reverse recovery charge, and 12.2 A pulsed drain current. It serves as a normally-off high-frequency switching device in half-bridge SMPS topologies for industrial and consumer power supplies.

For engineers reviewing the IGLR60R340D1XUMA1 datasheet, IGLR60R340D1XUMA1 pinout, IGLR60R340D1XUMA1 application, or IGLR60R340D1XUMA1 equivalent, key selection criteria include its zero Qrr, ultra-low output charge (8.8 nC at 400 V), Kelvin source configuration for gate drive stability, and JEDEC-qualified ruggedness for industrial operation.

Technical Context

This CoolGaN™ transistor uses gallium nitride on silicon technology to deliver fast switching with no reverse-recovery loss. Its gate threshold voltage (0.9–1.6 V at 25 °C) enables robust TTL/CMOS-compatible drive, while the integrated Kelvin source terminal decouples power and signal return paths to minimize gate loop inductance.

The device operates with 200 V/ns dV/dt immunity and supports hard-switched topologies up to 100 kHz. Its R_DS(on) remains stable across temperature (0.27 Ω typ. at 25 °C, 0.49 Ω max. at 150 °C), and thermal resistance R_thJC is 3 °C/W - enabling high-power density designs without active cooling in many cases.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS,max	600 V - Withstands DC bus voltages up to 400 V in half-bridge configurations with margin for transients.
R_DS(on),max	340 mΩ - Defines conduction loss at rated current; typ. 270 mΩ at 25 °C enables <1.2 W conduction loss at 2 A.
Q_G,typ	1.2 nC - Enables efficient gate driving with low energy per switch cycle and reduced driver IC stress.
Q_oss @ 400 V	8.8 nC - Low stored output energy reduces turn-off loss and EMI during hard switching.
Q_rr	0 nC - Eliminates reverse-recovery loss and associated ringing, simplifying layout and snubber design.
ID,pulse	12.2 A - Supports peak load handling in resonant and LLC converters without derating.
dV/dt immunity	200 V/ns - Ensures reliable operation under fast voltage transients without false turn-on.

Pinout & Package

IGLR60R340D1XUMA1 is housed in PG-TSON-8-7, a thermally enhanced 8-pin surface-mount package with exposed drain pad and dedicated Kelvin source terminal for precise gate control.

Pin/Terminal	Circuit Role	Design Meaning
Gate (Pin 4)	Control input	Drives channel conduction; low 0.83 Ω internal gate resistance minimizes oscillation risk.
Drain (Pin 5)	High-side power output	Connected to DC bus or transformer primary; electrically tied to exposed thermal pad.
Kelvin Source (Pin 3)	Reference return for gate drive	Isolates gate loop from high di/dt source current, stabilizing V_GS during switching.
Source (Pins 1,2)	Main power return path	Carries full load current; separate from Kelvin source to preserve gate drive integrity.

Key Features

Feature	Design Value
Enhancement-mode operation	Normally-off behavior ensures fail-safe startup and eliminates need for external bias circuitry.
No reverse-recovery charge (Q_rr = 0 nC)	Enables zero-voltage switching (ZVS) in resonant topologies without body diode losses.
Kelvin source configuration	Reduces gate loop inductance by >50% vs. 3-pin packages, improving switching consistency at >1 MHz.
JEDEC industrial qualification	Validated per JESD47 and JESD22 for 150 °C junction operation and long-term reliability in harsh environments.
Ultra-low Q_oss (8.8 nC @ 400 V)	Lowers turn-off energy loss by ~40% compared to comparable Si MOSFETs, extending efficiency gains above 300 kHz.

Applications

Industrial SMPS

Consumer AC-DC Adapters

Use Scenario: 1–3 kW server PSU using asymmetric half-bridge topology with 400 V DC bus.

IC Role / Device Role / Timing Role: High-side switching element in primary-side power stage; handles 100–500 kHz PWM with ZVS assist.

Use Value: Zero Q_rr eliminates body-diode conduction loss during dead-time, increasing full-load efficiency by 0.8–1.2% over Si superjunction MOSFETs.

Use Scenario: 65–100 W USB-C PD adapter with GaN-based active-clamp flyback.

IC Role / Device Role / Timing Role: Primary-side synchronous switch operating at 250 kHz with adaptive dead-time control.

Use Value: 1.2 nC Q_G allows use of low-cost integrated gate drivers (e.g., ICE5QSBG), reducing BOM count by one IC.

Telecom Rectifiers

EV Onboard Charger Stages

Use Scenario: 3 kW telecom rectifier module with interleaved PFC + LLC stages.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC resonant converter; conducts reverse current during freewheeling.

Use Value: Capable of bidirectional conduction with only 2.5 V forward drop (V_SD) at 1.62 A, reducing conduction loss by 35% vs. Schottky diodes.

Use Scenario: 11 kW OBC PFC front-end operating at 100 kHz with 800 V battery architecture.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC stage; rated for 600 V blocking and 12.2 A pulse.

Use Value: 3 °C/W R_thJC enables direct mounting to heatsink without thermal interface material, cutting thermal stack height by 0.3 mm.

Equivalent & Alternatives

The following parts are listed as comparable options for similar enhancement-mode GaN power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
GS66508T	650 V, 350 mΩ, 1.3 nC Q_G, PQFN-8 package without Kelvin source	Lacks Kelvin source; requires tighter gate loop layout to avoid oscillation above 300 kHz	Prefer when cost sensitivity outweighs need for >500 kHz operation or minimal gate drive complexity
TPH3205WS	600 V, 500 mΩ, 2.3 nC Q_G, TO-220AB package, Si-based superjunction	Higher R_DS(on) and Q_rr limit efficiency above 150 kHz; larger footprint and thermal resistance	Choose for legacy designs requiring pin compatibility with through-hole assembly or lower gate drive voltage tolerance

Compared with GS66508T and TPH3205WS, IGLR60R340D1XUMA1 delivers superior high-frequency efficiency via Kelvin source isolation and zero Q_rr, making it optimal for compact, high-density SMPS where layout space and thermal management are constrained.

Availability

IGLR60R340D1XUMA1 is available at Aetrix Electronics and suitable for industrial SMPS, consumer AC-DC adapters, and telecom rectifiers requiring stable component supply, long-lifecycle support, and JEDEC-qualified reliability.

Supply support for IGLR60R340D1XUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D infrastructure.

This part belongs to the CoolGaN™ family - engineered specifically for high-efficiency, high-frequency power conversion in industrial and consumer SMPS, targeting replacement of silicon MOSFETs in 100 kHz–1 MHz applications.

FAQ

What gate drive voltage is required for reliable operation?

IGLR60R340D1XUMA1 requires V_GS = +6 V to fully enhance the channel, with absolute maximum V_GS = –10 V (continuous) and –25 V (pulsed). Gate drive must maintain <4 mA average current and avoid exceeding ±25 V transient spikes to prevent gate oxide degradation.

Does this device require a negative gate voltage to ensure turn-off?

No - the device is enhancement-mode and self-turning-off at V_GS = 0 V. However, applying –2 V to –5 V during off-state improves noise immunity in high-dV/dt environments and suppresses unintended turn-on due to Miller coupling.

Can IGLR60R340D1XUMA1 conduct current in reverse direction?

Yes - it supports bidirectional conduction with V_SD = 2.5 V at 1.62 A. This enables use as a synchronous rectifier in LLC or active-clamp topologies without external diodes, though reverse conduction is limited to pulsed conditions per datasheet SOA curves.

How does the Kelvin source pin affect PCB layout?

The Kelvin source (Pin 3) must be routed separately from main source (Pins 1,2) and connected directly to the gate driver's reference ground with minimal trace length (<5 mm) and no shared vias. This prevents high di/dt current from modulating V_GS and causing erratic switching or shoot-through.

IGLR60R340D1XUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolGaN™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 8.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: 1.6V @ 530µA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -10V

Input Capacitance (Ciss) (Max) @ Vds:: 87.7 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 41.6W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSON-8-7

IGLR60R340D1XUMA1 FAQ

1.How can I place an order for IGLR60R340D1XUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IGLR60R340D1XUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGLR60R340D1XUMA1 reliable?

The price and inventory of IGLR60R340D1XUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGLR60R340D1XUMA1 is usually 5 days.

3.What payment methods are accepted for IGLR60R340D1XUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGLR60R340D1XUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGLR60R340D1XUMA1?

IGLR60R340D1XUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGLR60R340D1XUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGLR60R340D1XUMA1?

For technical support, including IGLR60R340D1XUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGLR60R340D1XUMA1 requirements.

6.How does Aetrix verify that IGLR60R340D1XUMA1 is sourced from the original manufacturer or authorized distributors?

All IGLR60R340D1XUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGLR60R340D1XUMA1 meets industry standards.

7.What is the process for return or replacement of IGLR60R340D1XUMA1?

All IGLR60R340D1XUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGLR60R340D1XUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGLR60R340D1XUMA1 part is unused and in its original packaging.

Return procedure for IGLR60R340D1XUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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