Infineon Technologies IGW100N60H3FKSA1

Overview

IGW100N60H3FKSA1 from Infineon is a 600V, 100A high-speed IGBT using Trench and Fieldstop technology, designed for industrial power control in switching converters requiring low turn-off energy (1.90 mJ at 25°C), low V_CE(sat) (1.85 V at 25°C), and operation up to 175°C junction temperature. It serves as the main switching device in high-frequency UPS and welding inverters.

For engineers reviewing the IGW100N60H3FKSA1 datasheet, IGW100N60H3FKSA1 pinout, IGW100N60H3FKSA1 application, or IGW100N60H3FKSA1 equivalent, key selection criteria include switching energy (E_off = 1.90–2.30 mJ), thermal resistance (R_th(j-c) = 0.21 K/W), gate charge (Q_G = 625 nC), and short-circuit withstand time (5 µs).

Technical Context

This third-generation TRENCHSTOP™ IGBT integrates field-stop doping and trench gate structure to simultaneously reduce conduction loss and switching loss. Its optimized carrier lifetime control enables fast turn-off with minimal tail current, while maintaining low V_CE(sat) across temperature (1.85–2.25 V from 25°C to 175°C).

The device operates under strict safe operating area constraints: DC collector current limited to 140 A at T_C = 25°C, pulsed current up to 300 A, and short-circuit capability of ≤5 µs at V_GE = 15 V and T_vj = 150°C - validated for ≤1000 events with ≥1 s interval.

Key Specifications

Pinout & Package

Supplied in PG-TO247-3 package with isolated mounting screw hole; case acts as collector terminal. Thermal path optimized via low R_th(j-c) and direct backside metal contact.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Compared with IXGN100N60B3 and STGW100H65DF, IGW100N60H3FKSA1 delivers optimal balance of conduction and switching loss at 400 V bus systems, with superior thermal robustness (175°C T_vj) and JEDEC qualification for long-life industrial deployment.

Availability

IGW100N60H3FKSA1 is available at Aetrix Electronics and suitable for uninterruptible power supplies, industrial welding converters, and high-frequency motor drives requiring stable component supply and long-term industrial lifecycle support.

Supply support for IGW100N60H3FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

The TRENCHSTOP™ High-Speed series targets industrial switching applications demanding low-loss, high-reliability IGBTs for UPS, welding, and motor control - emphasizing thermal ruggedness and consistent parametric stability across temperature.

FAQ

What is the maximum allowable gate-emitter voltage for IGW100N60H3FKSA1?

The absolute maximum gate-emitter voltage is ±20 V DC, with recommended operating range of –10 V to +15 V for reliable turn-on and noise-immune turn-off. Exceeding ±20 V risks permanent gate oxide damage, and operation below –5 V or above +18 V is not characterized per datasheet Rev. 1.2.

Does IGW100N60H3FKSA1 include an anti-parallel diode?

No - IGW100N60H3FKSA1 is a standalone IGBT in a 3-pin TO247 package without an integrated freewheeling diode. External diodes such as IDW50E60 (cited in datasheet switching test conditions) must be used in inductive applications to handle reverse recovery current.

How does junction temperature affect V_CE(sat) performance?

V_CE(sat) increases with junction temperature: 1.85 V at 25°C, 2.10 V at 125°C, and 2.25 V at 175°C (typical). This positive temperature coefficient improves current sharing in parallel configurations and provides inherent thermal self-limiting behavior during overload.

Can IGW100N60H3FKSA1 be used in parallel configurations?

Yes - its positive V_CE(sat) temperature coefficient and matched dynamic parameters across production lots enable stable current sharing. Design requires matched gate resistors, symmetrical layout, and individual emitter degeneration resistors (typically 10–50 mΩ) to ensure balanced static and dynamic current distribution.