Infineon Technologies IKW50N120CH7XKSA1
- Part No.:
- IKW50N120CH7XKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- TO-247-3
- Datasheet:
-
IKW50N120CH7XKSA1.pdf
- Description:
- IGBT TRENCH FS 1200V 86A TO247-3
- Quantity:
- Payment:

- Shipping:

Inventory:230
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Product details
Overview
IKW50N120CH7XKSA1 from Infineon is a 1200 V, 50 A high-speed TRENCHSTOP™ IGBT 7 co-packed with a full-rated 50 A ultra-fast recovery diode in a PG-TO247-3-STD package. It delivers VCE(sat) = 1.7 V at 25°C, toff = 319 ns, and Qrr = 1.48 µC, enabling high-efficiency hard-switching in industrial UPS, EV charging, and string inverters.
For engineers reviewing the IKW50N120CH7XKSA1 datasheet, IKW50N120CH7XKSA1 pinout, IKW50N120CH7XKSA1 application, or IKW50N120CH7XKSA1 equivalent, key selection criteria include its positive VCE(sat) temperature coefficient for stable paralleling, soft-commutating diode behavior, and 175°C maximum junction temperature for demanding thermal environments.
Technical Context
This device implements Infineon's 7th-generation TRENCHSTOP™ IGBT process with optimized carrier lifetime control and emitter-controlled diode design. Its low Qrr (1.48 µC) and soft reverse recovery (trr = 116 ns, dirr/dt = −383 A/µs) minimize voltage overshoot and EMI in high dv/dt topologies like 3-level NPC and T-type inverters.
The IGBT features a gate charge of 375 nC and total switching energy of 3.45 mJ at 25°C, balanced for high-frequency operation up to 30 kHz while maintaining low conduction loss. Thermal resistance Rth(j-c) is 0.29 K/W (IGBT) and 0.5 K/W (diode), supporting robust thermal management in compact power modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE | 1200 V - supports DC bus voltages up to 1000 V in 2-level inverters and 600–800 V in 3-level topologies. |
| IC | 50 A continuous - rated for sustained output current in industrial UPS and solar string inverters. |
| VCE(sat) | 1.7 V @ 25°C - reduces conduction losses and improves system efficiency at nominal load. |
| toff | 319 ns @ 25°C - enables fast turn-off with minimal tail current, critical for high-frequency hard switching. |
| Qrr | 1.48 µC @ 25°C - lowers diode recovery loss and reduces snubber stress in inductive switching circuits. |
| Tvj(max) | 175°C - allows operation in high-ambient environments without derating, extending reliability in sealed enclosures. |
| Rth(j-c) (IGBT) | 0.29 K/W - enables efficient heat transfer to heatsink, supporting compact thermal design in space-constrained systems. |
Pinout & Package
Package: PG-TO247-3-STD (standard 3-pin TO-247 variant with 2.5 mm lead pitch, RoHS-compliant Pb-free plating).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Collector (C) | Main high-side power terminal | Connects to DC+ bus; carries full load current and withstands 1200 V blocking capability. |
| Gate (G) | Control input for IGBT channel | Drives turn-on/turn-off with ±20 V rating; requires 375 nC charge for full switching cycle. |
| Emiter (E) | Common emitter/diode cathode node | Serves as reference for both IGBT and anti-parallel diode; must be low-inductance layout due to shared current path. |
Key Features
| Feature | Design Value |
|---|---|
| Positive VCE(sat) temperature coefficient | Enables stable current sharing across parallel devices without external balancing resistors. |
| Soft-commutating ultra-fast diode | Reduces voltage spikes and EMI during reverse recovery, eliminating need for snubber networks in many designs. |
| Low internal emitter inductance (13 nH) | Minimizes parasitic oscillation and gate ringing during high di/dt switching events. |
| JEDEC-qualified for industrial applications | Validated per JEDEC47/20/22 standards, ensuring long-term reliability under thermal cycling and humidity stress. |
Applications
| Industrial UPS | EV Charging Stations |
|---|---|
Use Scenario: Online double-conversion UPS delivering clean, regulated AC output during grid failure or fluctuation. IC Role / Device Role: High-side switch in IGBT-based inverter stage converting DC bus to 50/60 Hz AC. Use Value: 175°C junction rating and low VCE(sat) sustain efficiency >96% at full load while minimizing heatsink size. | Use Scenario: DC fast-charging (DCFC) rectifier/inverter stage converting AC grid to 200–1000 V DC for battery packs. IC Role / Device Role: Main switching element in active front-end (AFE) or DC-DC isolation stage. Use Value: Soft-recovery diode and low Qrr reduce EMI and enable compliance with CISPR 11 Class A without oversized filters. |
| String Inverters | Industrial Welding Equipment |
Use Scenario: Centralized or multi-string PV inverters converting 600–1000 V DC to grid-synchronized AC. IC Role / Device Role: Output stage switch in 3-level NPC or T-type topology for reduced THD and dv/dt stress. Use Value: Optimized switching energy (Ets = 3.45 mJ) enables 20–30 kHz operation with <1.5% conduction + switching loss share. | Use Scenario: Inverter-based arc welding machines requiring precise current control and rapid duty cycling. IC Role / Device Role: Primary power switch in resonant or hard-switched inverter driving transformer-primary side. Use Value: Fast turn-off (toff = 319 ns) and high pulsed current rating (ICpulse = 200 A) support 300 A peak weld currents with <10 µs response time. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage IGBT + diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IKW40N120H3 | 1200 V, 40 A, TRENCHSTOP™ 3 generation; higher VCE(sat) (2.1 V), slower toff (450 ns), no soft diode. | Limited to ≤15 kHz switching; requires snubber for diode recovery; lower current handling. | Select only for cost-sensitive legacy designs where switching frequency and EMI are non-critical. |
| FF50R12ME4 | 1200 V, 50 A, EconoDUAL™ module with SiC diode; lower Qrr (0.4 µC), but higher gate drive complexity and cost. | Better suited for >50 kHz operation and ultra-low-loss systems; not drop-in compatible due to module footprint and dual-source architecture. | Choose when system-level efficiency gain justifies redesign effort and higher BOM cost. |
Compared with IKW40N120H3, IKW50N120CH7XKSA1 delivers 25% higher current rating, 30% faster turn-off, and integrated soft diode-enabling smaller magnetics and fewer passive components. Versus FF50R12ME4, it offers direct TO-247 compatibility and simpler gate drive, trading ~15% higher switching loss for ease of integration and lower system cost.
Availability
IKW50N120CH7XKSA1 is available at Aetrix Electronics and suitable for industrial UPS, EV charging stations, and string inverters requiring stable component supply, long lifecycle support, and JEDEC-qualified reliability.
Supply support for IKW50N120CH7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
This part belongs to the TRENCHSTOP™ IGBT 7 family, engineered specifically for high-efficiency, high-frequency hard-switching applications in solar inverters, UPS systems, and industrial motor drives where low conduction loss and soft switching behavior are critical.
FAQ
What is the maximum recommended gate resistor value for reliable switching?
The datasheet specifies RG(off) ≥ 8 Ω for safe SOA operation. Using RG = 8–15 Ω balances switching speed and voltage overshoot; values above 22 Ω increase toff beyond 400 ns and raise Eoff by >35%, risking thermal runaway under high-load conditions.
Can IKW50N120CH7XKSA1 replace older TRENCHSTOP™ 5 or 6 IGBTs in existing designs?
Yes, it is pin-compatible with IKW50N120H5 and IKW50N120H6 in PG-TO247-3-STD packages. However, gate charge is 12% higher than H6, requiring verification of driver capability and gate loop inductance to avoid oscillation.
Is the integrated diode rated for freewheeling in bidirectional topologies?
Yes-the co-packed diode is rated for 50 A continuous forward current and 200 A pulsed current, with soft recovery (Irrm = 28 A, dirr/dt = −383 A/µs) validated for freewheeling in 2L and 3L inverter legs without external diodes.
Does this device require negative gate voltage for robust turn-off?
No-turn-off is stable with 0 V gate bias. The datasheet confirms safe operation with VGE = 0/15 V; applying −5 V offers marginal noise immunity but is unnecessary for standard industrial layouts with proper gate routing and decoupling.
IKW50N120CH7XKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- TRENCHSTOP™
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- IGBT Type:
- Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max):
- 1200 V
- Current - Collector (Ic) (Max):
- 86 A
- Current - Collector Pulsed (Icm):
- 200 A
- Vce(on) (Max) @ Vge, Ic:
- 2.15V @ 15V, 50A
- Power - Max:
- 398 W
- Switching Energy:
- 2.33mJ (on), 1.12mJ (off)
- Input Type:
- Standard
- Gate Charge:
- 375 nC
- Td (on/off) @ 25°C:
- 39ns/319ns
- Test Condition:
- -
- Reverse Recovery Time (trr):
- 116 ns
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO247-3-U06
IKW50N120CH7XKSA1 FAQ
1.How can I place an order for IKW50N120CH7XKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IKW50N120CH7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IKW50N120CH7XKSA1 reliable?
The price and inventory of IKW50N120CH7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW50N120CH7XKSA1 is usually 5 days.
3.What payment methods are accepted for IKW50N120CH7XKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW50N120CH7XKSA1 transactions.
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IKW50N120CH7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IKW50N120CH7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IKW50N120CH7XKSA1?
For technical support, including IKW50N120CH7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW50N120CH7XKSA1 requirements.
6.How does Aetrix verify that IKW50N120CH7XKSA1 is sourced from the original manufacturer or authorized distributors?
All IKW50N120CH7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW50N120CH7XKSA1 meets industry standards.
7.What is the process for return or replacement of IKW50N120CH7XKSA1?
All IKW50N120CH7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKW50N120CH7XKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IKW50N120CH7XKSA1 part is unused and in its original packaging.
Return procedure for IKW50N120CH7XKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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