Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKW50N60DTPXKSA1

Name: IKW50N60DTPXKSA1
Brand: Infineon Technologies
SKU: IKW50N60DTPXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IKW50N60DTPXKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKW50N60DTPXKSA1.pdf

Description:: IGBT TRENCH FS 600V 80A TO247-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:161

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IKW50N60DTPXKSA1 from Infineon is a 600V, 50A TRENCHSTOP™ Performance-series IGBT copacked with a RAPID 1 fast anti-parallel diode in a PG-TO247-3 package. It delivers low V_CE(sat) (1.6 V at 25°C), soft fast diode recovery (t_rr = 115 ns), and 175°C max junction temperature - enabling high-efficiency medium-frequency switching in industrial inverters and UPS systems.

For engineers reviewing the IKW50N60DTPXKSA1 datasheet, IKW50N60DTPXKSA1 pinout, IKW50N60DTPXKSA1 application, or IKW50N60DTPXKSA1 equivalent, key selection criteria include its 249 nC gate charge, 0.36 K/W IGBT junction-to-case thermal resistance, 1.53 mJ turn-on energy at 25°C, and dual-device DuoPack integration for compact half-bridge layout.

Technical Context

This IGBT uses trench-gate and field-stop architecture to achieve low conduction loss and short tail current, reducing EMI and improving system efficiency. Its integrated RAPID 1 diode features very soft reverse recovery (I_rrm = 11.3 A, dI_rr/dt = 125 A/µs) and low Q_rr (0.75 µC), minimizing voltage overshoot during commutation.

The device is rated for 5 µs short-circuit withstand time at 150°C with 15 V gate drive and supports up to 150 A pulsed collector current. Thermal design is enabled by separate IGBT and diode junction-to-case thermal resistances (0.36 K/W and 0.62 K/W typ.), allowing independent thermal modeling of each die.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	600 V - Maximum blocking voltage for use in 400–600 V DC bus applications like solar inverters and UPS.
I_C	50 A continuous - Rated collector current at T_C = 25°C; derates to 61 A at T_C = 100°C per datasheet.
V_CE(sat)	1.60 V at 25°C - Low saturation voltage reduces conduction losses and heatsink sizing requirements.
E_off	0.85 mJ at 25°C - Low turn-off energy enables higher switching frequencies without excessive loss penalty.
t_rr	115 ns at 25°C - Fast, soft diode recovery minimizes voltage spikes and snubber demands in inductive loads.
R_th(j-c) (IGBT)	0.36 K/W typical - Enables precise junction temperature estimation for thermal protection and lifetime prediction.
Q_G	249 nC - Gate charge value informs gate driver sizing and switching loss calculation under defined test conditions.

Pinout & Package

IKW50N60DTPXKSA1 is housed in a PG-TO247-3 plastic package with isolated mounting flange and standard lead spacing. The three terminals are arranged linearly: Collector (C), Gate (G), and Emitter (E), with the diode anode internally connected to the emitter terminal and cathode to the collector terminal.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	IGBT drain / Diode cathode	Main high-side power terminal; carries full load current and blocks 600 V; electrically common to diode cathode.
Gate (G)	IGBT control input	Isolated MOS-controlled terminal; requires ±20 V rating and 249 nC drive capability for full switching.
Emitter (E)	IGBT source / Diode anode	Power return path for IGBT and forward current path for integrated diode; referenced for gate drive.

Key Features

Feature	Design Value
TRENCHSTOP™ technology	Enables 1.6 V V_CE(sat) and short tail current, reducing conduction loss and EMI in motor drives.
RAPID 1 anti-parallel diode	Delivers 115 ns t_rr and 0.75 µC Q_rr, supporting zero-voltage switching topologies without external snubbers.
175°C maximum junction temperature	Allows operation in high-ambient environments (e.g., enclosed UPS cabinets) and extends reliability under thermal cycling.
JEDEC-qualified reliability	Validated for industrial power control applications per JEDEC standards, ensuring long-term parametric stability.
Pb-free and RoHS-compliant plating	Meets global environmental compliance requirements without compromising solderability or intermetallic formation.

Applications

Solar Inverter Half-Bridge

Industrial Motor Drive Output Stage

Use Scenario: Used in the upper and lower switches of a 3-phase inverter stage converting 600 V DC PV array output to 50/60 Hz AC.

IC Role / Device Role / Timing Role: IGBT handles main power switching; integrated diode provides freewheeling path during dead-time.

Use Value: Low V_CE(sat) and soft diode recovery reduce thermal stress and improve inverter efficiency above 97% at full load.

Use Scenario: Mounted on heatsink in variable-frequency drive output module controlling 30–50 kW induction motors.

IC Role / Device Role / Timing Role: Switches PWM-modulated 4 kHz–10 kHz output; diode recirculates inductive motor current during off-state.

Use Value: 175°C rating allows sustained operation at 100°C case temperature without derating, simplifying thermal management.

Uninterruptible Power Supply (UPS) Inverter

Medium-Frequency DC-DC Converter

Use Scenario: Forms part of double-conversion online UPS inverter stage delivering clean 230 V AC during grid outage.

IC Role / Device Role / Timing Role: High-reliability switching element in full-bridge topology; operates at 8–12 kHz with tight dead-time control.

Use Value: 5 µs short-circuit withstand time supports robust fault handling during battery overloads or output shorts.

Use Scenario: Used in isolated bidirectional DC-DC stage of EV charging station, stepping 400 V DC to 48 V or vice versa.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge; diode handles synchronous rectification current.

Use Value: Low E_off (0.85 mJ) and fast t_rr enable >10 kHz operation while maintaining <1.2% switching loss fraction.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT + anti-parallel diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW40N65ES5XKSA1	650 V rating, 40 A, lower Q_G (175 nC), higher V_CE(sat) (1.75 V), same TO247-3 package	Better for 650 V DC bus systems; reduced gate drive power but higher conduction loss at 50 A	Select when system DC link exceeds 600 V or gate driver power budget is constrained.
FGH40N60UFD	600 V, 40 A, UltraFast diode (t_rr = 65 ns), higher V_CE(sat) (2.0 V), TO247-3	Faster diode recovery but higher conduction loss; optimized for ZVS resonant converters	Prefer where diode reverse recovery speed dominates over conduction loss, e.g., LLC primary switches.

Compared with IKW40N65ES5XKSA1 and FGH40N60UFD, IKW50N60DTPXKSA1 offers the best balance of current rating, low V_CE(sat), and soft diode recovery for 600 V industrial inverters - making it optimal for space-constrained, thermally demanding applications requiring both efficiency and ruggedness.

Availability

IKW50N60DTPXKSA1 is available at Aetrix Electronics and suitable for solar inverters, uninterruptible power supplies, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for IKW50N60DTPXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon-based power devices and wide-bandgap solutions.

IKW50N60DTPXKSA1 belongs to the TRENCHSTOP™ Performance series, designed specifically for industrial power conversion systems demanding high reliability, low-loss switching, and integrated diode functionality in compact packages.

FAQ

What is the maximum allowable gate-emitter voltage for IKW50N60DTPXKSA1?

The absolute maximum gate-emitter voltage is ±20 V, as specified in the datasheet's "Maximum Ratings" table. Operation beyond this range risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and –5 V to –10 V for turn-off to ensure robust noise immunity and fast fall times.

Does IKW50N60DTPXKSA1 require an external freewheeling diode?

No - it integrates a RAPID 1 anti-parallel diode co-packaged in the same TO247-3 housing. This diode is electrically connected between collector and emitter, providing the necessary freewheeling path for inductive loads without external components.

How does junction temperature affect V_CE(sat) performance?

V_CE(sat) increases with junction temperature: from 1.60 V at 25°C to 1.94 V at 175°C (typical). This positive temperature coefficient improves current sharing in parallel configurations and supports inherent thermal stability during overload conditions.

Can IKW50N60DTPXKSA1 be used in parallel configurations?

Yes - its positive V_CE(sat) temperature coefficient and matched dynamic characteristics across production lots support reliable paralleling. Designers must ensure symmetrical gate drive, current-sharing inductors, and thermal coupling to maintain balanced loading below 175°C junction limit.

IKW50N60DTPXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Not For New Designs

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 150 A

Vce(on) (Max) @ Vge, Ic:: 1.8V @ 15V, 50A

Power - Max:: 319.2 W

Switching Energy:: 1.53mJ (on), 850µJ (off)

Input Type:: Standard

Gate Charge:: 249 nC

Td (on/off) @ 25°C:: 20ns/215ns

Test Condition:: 400V, 50A, 7Ohm, 15V

Reverse Recovery Time (trr):: 115 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IKW50N60DTPXKSA1 FAQ

1.How can I place an order for IKW50N60DTPXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKW50N60DTPXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKW50N60DTPXKSA1 reliable?

The price and inventory of IKW50N60DTPXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW50N60DTPXKSA1 is usually 5 days.

3.What payment methods are accepted for IKW50N60DTPXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW50N60DTPXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKW50N60DTPXKSA1?

IKW50N60DTPXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKW50N60DTPXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKW50N60DTPXKSA1?

For technical support, including IKW50N60DTPXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW50N60DTPXKSA1 requirements.

6.How does Aetrix verify that IKW50N60DTPXKSA1 is sourced from the original manufacturer or authorized distributors?

All IKW50N60DTPXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW50N60DTPXKSA1 meets industry standards.

7.What is the process for return or replacement of IKW50N60DTPXKSA1?

All IKW50N60DTPXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKW50N60DTPXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKW50N60DTPXKSA1 part is unused and in its original packaging.

Return procedure for IKW50N60DTPXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…