Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKW50N65RH5XKSA1

Name: IKW50N65RH5XKSA1
Brand: Infineon Technologies
SKU: IKW50N65RH5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IKW50N65RH5XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKW50N65RH5XKSA1.pdf

Description:: IGBT TRENCH FS 650V 80A TO247-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:256

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IKW50N65RH5XKSA1 from Infineon is a CoolSiC™ Hybrid Discrete combining a 650 V, 50 A TRENCHSTOP™ 5 H5 IGBT with a co-packed 6th-generation 650 V CoolSiC™ Schottky diode in a single PG-TO247-3 package. It delivers ultra-low switching losses, 175 °C maximum junction temperature, and JEDEC-qualified reliability for high-efficiency hard-switching power conversion stages in industrial UPS and solar string inverters.

For engineers reviewing the IKW50N65RH5XKSA1 datasheet, IKW50N65RH5XKSA1 pinout, IKW50N65RH5XKSA1 application, or IKW50N65RH5XKSA1 equivalent, key selection criteria include its hybrid Si/SiC architecture, 120 nC gate charge, 0.5 K/W IGBT R_th(j-c), 1.5 K/W diode R_th(j-c), and plug-and-play compatibility with legacy silicon IGBT modules in 650 V systems.

Technical Context

This hybrid discrete integrates two die-TRENCHSTOP™ 5 H5 IGBT and CoolSiC™ 6th-gen Schottky diode-within one TO247-3 housing, sharing thermal and electrical paths. The IGBT features low V_CE(sat) (1.95 V @ 175 °C) and fast switching (t_d(off) = 200 ns @ 150 °C), while the SiC diode provides near-zero reverse recovery (Q_rr not specified but inherently negligible) and 1.65 V forward voltage at 175 °C.

The device operates under hard-switching conditions with defined parasitic inductance (L_σ = 30 nH) and capacitance (C_σ = 30 pF) per test circuit. Its 175 °C rated junction temperature enables higher power density and reduced heatsink requirements compared to standard 150 °C silicon IGBTs, validated across JEDEC JESD22-A108 and JESD22-A110 stress profiles.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650 V - Enables use in 400–600 V DC bus applications including solar string inverters and industrial UPS.
I_C	50 A - Continuous collector current rating at T_c = 100 °C; supports 5–10 kW power stages with forced-air cooling.
V_CE(sat)	1.95 V @ 175 °C - Low conduction loss improves full-load efficiency and reduces thermal stress on heatsink.
Q_G	120 nC - Gate charge value determines driver strength requirement; compatible with standard 2–4 A peak gate drivers.
R_th(j-c) (IGBT)	0.5 K/W - Enables compact thermal design; 100 W dissipation raises case temperature only 50 K above junction.
R_th(j-c) (Diode)	1.5 K/W - Higher than IGBT but optimized for SiC diode's lower switching loss contribution to total system loss.
T_vj(max)	175 °C - Extends lifetime and derating margin over conventional 150 °C IGBTs in thermally constrained enclosures.

Pinout & Package

IKW50N65RH5XKSA1 uses the PG-TO247-3 package: insulated plastic body with copper leadframe, backside collector metallization, and 3-pin vertical mounting configuration. Thermal path is optimized via direct collector-to-heatsink contact through the metal tab.

Pin/Terminal	Circuit Role	Design Meaning
G	IGBT gate terminal	Controls IGBT turn-on/turn-off; requires ±20 V absolute max rating and low-inductance gate loop layout.
C	IGBT collector terminal	High-side power node; electrically tied to backside collector metallization for low-inductance main current path.
E	IGBT emitter terminal	Common emitter reference for both IGBT and diode; serves as return path for load current and gate drive return.

Key Features

Feature	Design Value
Hybrid Si/SiC integration	Co-packaged TRENCHSTOP™ 5 IGBT + CoolSiC™ Schottky diode eliminates external diode layout complexity and reduces stray inductance.
Ultra-low switching loss	Total switching energy E_ts = 0.57 mJ @ 25 A, 150 °C - Reduces heat generation in high-frequency hard-switching topologies (e.g., 16–32 kHz).
Plug-and-play replacement	Same footprint and pinout as legacy 650 V silicon IGBTs - enables drop-in upgrade without PCB redesign or gate driver changes.
JEDEC qualification	Validated per JESD22-A108 (temperature cycling), JESD22-A110 (highly accelerated stress test), and JESD47 - ensures reliability in industrial environments.
Pb-free & RoHS compliant	Lead-free plating meets EU RoHS Directive 2011/65/EU and Infineon's green policy - supports eco-design and global market access.

Applications

Industrial SMPS

Industrial UPS

Use Scenario: 10–20 kW three-phase rectifier/inverter stage in modular uninterruptible power supplies.

IC Role / Device Role / Timing Role: Main switching device in inverter leg; handles bidirectional 650 V DC bus switching at 16 kHz with low conduction and switching loss.

Use Value: Enables >98.2% system efficiency at full load and extends battery runtime by reducing thermal overhead and enabling smaller heatsinks.

Use Scenario: High-density 5–15 kW offline SMPS for factory automation controllers and PLC power supplies.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology operating at 100–200 kHz with zero-voltage switching assist.

Use Value: Reduces EMI filter size by 30% due to faster, cleaner switching edges and eliminates snubber networks required with silicon IGBTs.

Solar String Inverter

Energy Storage System

Use Scenario: DC–AC conversion stage in 5–10 kW string inverters with MPPT tracking and grid synchronization.

IC Role / Device Role / Timing Role: Half-bridge switch in unipolar PWM configuration; switches 600 V DC input at 16–20 kHz with minimal dead-time impact.

Use Value: Improves annual energy yield by 0.8% vs. silicon IGBTs due to lower conduction loss at partial load and higher junction temperature tolerance.

Use Scenario: Bi-directional DC–DC converter in residential battery storage systems interfacing 400 V battery packs with 230 V AC grid.

IC Role / Device Role / Timing Role: Synchronous rectifier switch in isolated dual-active-bridge topology; conducts during both charge and discharge cycles.

Use Value: Achieves >97.5% round-trip efficiency across 10–100% SoC range and supports 15-year field lifetime with 175 °C thermal headroom.

Equivalent & Alternatives

The following parts are listed as comparable options for similar hybrid IGBT/diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW40N65H5	Lower I_C rating (40 A), identical V_CE, same hybrid structure and package.	Rated for ≤8 kW systems; reduced conduction loss at light loads but lower peak power capability.	Select when thermal budget allows smaller heatsink and system power is capped at 8 kW.
IKW50N65ES6	Full-silicon TRENCHSTOP™ 6 IGBT + FRD; no SiC diode; higher V_F (2.2 V) and Q_rr (1.2 µC).	Higher switching loss and thermal stress; requires larger heatsink and snubbers in hard-switching.	Select only if cost sensitivity outweighs efficiency targets and existing designs already use FRD-based layouts.

Compared with IKW40N65H5 and IKW50N65ES6, IKW50N65RH5XKSA1 uniquely balances 50 A current handling, SiC diode zero-recovery advantage, and 175 °C operation-making it optimal for space-constrained, high-efficiency 650 V industrial converters where thermal margin and lifetime are critical.

Availability

IKW50N65RH5XKSA1 is available at Aetrix Electronics and suitable for industrial SMPS, solar string inverters, and energy storage systems requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for IKW50N65RH5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The CoolSiC™ Hybrid Discrete product line was developed to bridge the performance gap between silicon IGBTs and full-SiC modules-delivering measurable efficiency gains in 650 V industrial power conversion without requiring full ecosystem redesign.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies RG_on = RG_off = 12 Ω for characterization. For safe operation, Infineon recommends RG ≤ 22 Ω to limit dv/dt and prevent spurious turn-on, especially under high dV/dt conditions (>5 kV/µs). Values above 33 Ω increase switching time and energy loss significantly.

Can IKW50N65RH5XKSA1 be used in parallel configurations?

Yes, but only with matched devices and strict layout symmetry. The device exhibits positive V_CE(sat) temperature coefficient above 100 °C, enabling current sharing. However, gate drive loop inductance must be balanced to within ±0.5 nH, and emitter resistors (0.1 Ω) are recommended for dynamic balancing in multi-device legs.

Is the CoolSiC™ diode in this hybrid discrete a Schottky or junction type?

It is a 6th-generation CoolSiC™ Schottky diode. Confirmed by Infineon's product brief and datasheet Section 3, which states "CoolSiC™ Schottky diode" and lists VF with no reverse recovery charge (Q_rr)-a defining characteristic of Schottky architecture. Junction temperature-dependent VF behavior (1.35–1.65 V) further confirms Schottky conduction.

Does the backside collector require electrically insulating thermal interface material?

No. The PG-TO247-3 package uses an electrically conductive collector tab. A non-insulating thermal interface (e.g., metal-filled grease or phase-change pad) is mandatory to maintain low R_th(j-c). Insulating pads would add ~0.3 K/W thermal resistance and violate the 0.5 K/W spec, risking thermal runaway at rated current.

IKW50N65RH5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™ 5

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 200 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 50A

Power - Max:: 305 W

Switching Energy:: 230µJ (on), 180µJ (off)

Input Type:: Standard

Gate Charge:: 120 nC

Td (on/off) @ 25°C:: 22ns/180ns

Test Condition:: 400V, 25A, 12Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IKW50N65RH5XKSA1 FAQ

1.How can I place an order for IKW50N65RH5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKW50N65RH5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKW50N65RH5XKSA1 reliable?

The price and inventory of IKW50N65RH5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW50N65RH5XKSA1 is usually 5 days.

3.What payment methods are accepted for IKW50N65RH5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW50N65RH5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKW50N65RH5XKSA1?

IKW50N65RH5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKW50N65RH5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKW50N65RH5XKSA1?

For technical support, including IKW50N65RH5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW50N65RH5XKSA1 requirements.

6.How does Aetrix verify that IKW50N65RH5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKW50N65RH5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW50N65RH5XKSA1 meets industry standards.

7.What is the process for return or replacement of IKW50N65RH5XKSA1?

All IKW50N65RH5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKW50N65RH5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKW50N65RH5XKSA1 part is unused and in its original packaging.

Return procedure for IKW50N65RH5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…