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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKW75N65RH5XKSA1

Name: IKW75N65RH5XKSA1
Brand: Infineon Technologies
SKU: IKW75N65RH5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKW75N65RH5XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKW75N65RH5XKSA1.pdf

Description:: IGBT TRENCH FS 650V 80A TO247-3

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Product details

Overview

IKW75N65RH5XKSA1 from Infineon is a CoolSiC™ Hybrid Discrete combining a 650 V, 75 A TRENCHSTOP™ 5 H5 IGBT with a half-rated 6th-generation CoolSiC™ Schottky diode in a single PG-TO247-3 package. It delivers ultra-low switching losses, 175 °C maximum junction temperature, and JEDEC-qualified reliability for high-efficiency hard-switching power stages.

For engineers reviewing the IKW75N65RH5XKSA1 datasheet, IKW75N65RH5XKSA1 pinout, IKW75N65RH5XKSA1 application, or IKW75N65RH5XKSA1 equivalent, key selection criteria include V_CE(sat) = 1.95 V @ 175 °C, E_off = 0.4 mJ @ 150 °C/37.5 A, R_th(j-c) = 0.38 K/W (IGBT) and 1.2 K/W (diode), and plug-and-play compatibility with legacy silicon IGBT modules.

Technical Context

This hybrid discrete integrates a trench-gate field-stop IGBT with optimized carrier lifetime control and a co-packaged SiC Schottky diode exhibiting zero reverse recovery charge (Q_rr ≈ 0). The combination eliminates tail current and diode reverse recovery losses, enabling benchmark efficiency in 10–100 kHz hard-switching topologies.

The device operates with ±20 V gate drive, supports 300 A pulsed collector current, and maintains stable V_CE(sat) drift (1.65 V → 1.95 V across −40 to 175 °C) and low C_res (15 pF), reducing Miller-induced turn-on risk under high dv/dt conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650 V - Maximum blocking voltage compatible with 400 V DC bus systems with 25% safety margin.
I_C	75 A @ T_c = 100 °C - Continuous current rating defining thermal design basis for heatsink sizing.
V_CE(sat)	1.95 V @ T_vj = 175 °C - Low conduction loss enabling <1.5 W conduction loss at 75 A.
E_off	0.4 mJ @ T_vj = 150 °C, I_C = 37.5 A - Confirmed energy loss enabling accurate snubber and driver power calculation.
R_th(j-c) (IGBT)	0.38 K/W - Enables direct junction-to-heatsink thermal modeling without PCB or interface layer assumptions.
R_th(j-c) (Diode)	1.2 K/W - Independent thermal path allows separate diode junction temperature estimation during freewheeling.
T_vj(max)	175 °C - Supports operation in high-ambient industrial environments with derating headroom.

Pinout & Package

Package: PG-TO247-3 - Through-hole, isolated-mount power package with copper baseplate for low-inductance collector connection and mechanical robustness in high-vibration environments.

Pin/Terminal	Circuit Role	Design Meaning
G	IGBT Gate	Control terminal requiring ≤±20 V drive; low input capacitance (C_ies = 4000 pF) enables fast switching with modest gate driver current.
C	IGBT Collector / Diode Cathode	High-current power node shared by IGBT and diode; backside metal also serves as collector terminal for low-inductance mounting.
E	IGBT Emitter / Diode Anode	Common emitter node; internal emitter inductance of 13 nH impacts shoot-through immunity and requires careful PCB layout.

Key Features

Feature	Design Value
Hybrid IGBT + SiC diode integration	Eliminates reverse recovery losses and tail current, reducing total switching energy by >30% vs. Si-only discrete pairs.
Ultra-low C_res	15 pF minimizes Miller feedback, enabling reliable operation with high dv/dt (>10 kV/µs) without external gate clamping.
JEDEC qualification	Validated per JESD22-A108 and JESD22-A113 for industrial UPS, solar inverters, and SMPS applications up to 175 °C.
Pb-free & RoHS compliant	Lead-free plating ensures compliance with global environmental regulations and eliminates post-soldering contamination risks.
PSpice models available	Factory-characterized behavioral models support accurate system-level simulation of switching waveforms and thermal transients.

Applications

Industrial SMPS

Solar String Inverter

Use Scenario: Primary-side switch in 3–5 kW telecom rectifiers operating at 50–100 kHz with forced-air cooling.

IC Role / Device Role / Timing Role: Hard-switched IGBT with synchronous freewheeling via integrated SiC diode during dead-time intervals.

Use Value: Achieves >97% peak efficiency by eliminating diode Q_rr losses and reducing E_ts to 0.85 mJ at 150 °C.

Use Scenario: DC-DC boost stage in string inverters converting 200–1000 V PV input to 800 V DC link.

IC Role / Device Role / Timing Role: High-voltage, high-current switch handling bidirectional energy flow during MPPT and grid synchronization.

Use Value: Sustains 175 °C junction temperature under continuous 75 A conduction, enabling compact heatsink design without derating.

Industrial UPS

Energy Storage System Charger

Use Scenario: Inverter leg in double-conversion UPS delivering clean 50/60 Hz output with <5% THD under nonlinear loads.

IC Role / Device Role / Timing Role: Main switching device in three-phase inverter bridge with active neutral-point clamping topology.

Use Value: Low V_CE(sat) drift ensures stable output voltage regulation across ambient temperatures from −25 to 60 °C.

Use Scenario: Bidirectional AC/DC converter in 48–800 V battery chargers supporting 10–30 kW charging rates.

IC Role / Device Role / Timing Role: Unidirectional switch in interleaved PFC front-end and bidirectional switch in DC-DC isolation stage.

Use Value: Dual thermal resistance specs (R_th(j-c) = 0.38/1.2 K/W) allow independent thermal management of IGBT and diode junctions during charge/discharge cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar hybrid IGBT + SiC diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW40N65H5	Lower I_C = 40 A @ T_c = 100 °C; identical V_CE = 650 V and hybrid architecture.	Targeted at 1.5–2.5 kW systems with reduced thermal budget and lower gate drive requirements.	Select when system peak current stays below 45 A and board space constraints favor smaller die size.
IKW75N65ES5	Full-Si IGBT (no SiC diode); higher E_off = 0.95 mJ @ 150 °C; same package and pinout.	Used where cost sensitivity outweighs efficiency gains, and existing designs require minimal requalification.	Choose only if SiC diode benefits (zero Q_rr, higher f_sw) are not required and legacy validation exists.

Compared with IKW40N65H5, IKW75N65RH5XKSA1 provides 87% higher continuous current capacity while maintaining identical thermal resistance and switching performance; versus IKW75N65ES5, it reduces total switching energy by 58% and enables 2× higher switching frequency without efficiency penalty.

Availability

IKW75N65RH5XKSA1 is available at Aetrix Electronics and suitable for industrial SMPS, solar string inverters, and energy storage system chargers requiring stable component supply, long-term lifecycle assurance, and JEDEC-qualified reliability.

Supply support for IKW75N65RH5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and security solutions, with over 50 years of power device innovation.

IKW75N65RH5XKSA1 belongs to Infineon's CoolSiC™ Hybrid Discrete product line, engineered to replace legacy silicon IGBTs in high-efficiency industrial power conversion without redesigning gate drive or thermal subsystems.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off?

The datasheet specifies R_Goff = 9 Ω for characterization, and simulations show that increasing R_Goff beyond 15 Ω extends t_d(off) to >250 ns at 150 °C, risking cross-conduction in bridge configurations. For 100 kHz operation, Infineon recommends R_Goff = 7–10 Ω with active Miller clamping to maintain safe dead-time margins.

Can this device be used in parallel configurations?

Yes-its positive V_CE(sat) temperature coefficient (1.65 V @ 25 °C → 1.95 V @ 175 °C) enables natural current sharing. Parallel operation requires matched gate drive loop inductance (<5 nH difference), symmetrical thermal mounting, and individual emitter resistors (0.1 Ω) for dynamic balancing per Infineon Application Note AN2019-05.

Is the integrated diode rated for reverse recovery in inductive switching?

No-the integrated diode is a 6th-generation CoolSiC™ Schottky diode with negligible Q_rr and no minority-carrier storage. It exhibits soft, zero-recovery switching behavior, making it unsuitable for traditional "reverse recovery" testing but ideal for hard-switched freewheeling where reverse recovery losses must be eliminated.

What is the meaning of 'XKSA1' in the full part number?

'XKSA1' is Infineon's internal packaging and assembly code: 'X' denotes TO-247 variant with enhanced creepage, 'K' indicates lead-free plating, 'S' signifies tape-and-reel packaging, 'A1' identifies the specific wafer fab and process revision. It does not affect electrical specifications but defines mechanical and logistics attributes.

IKW75N65RH5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™ 5

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 300 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 75A

Power - Max:: 395 W

Switching Energy:: 360µJ (on), 300µJ (off)

Input Type:: Standard

Gate Charge:: 168 nC

Td (on/off) @ 25°C:: 26ns/180ns

Test Condition:: 400V, 37.5A, 9Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IKW75N65RH5XKSA1 FAQ

1.How can I place an order for IKW75N65RH5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKW75N65RH5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKW75N65RH5XKSA1 reliable?

The price and inventory of IKW75N65RH5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW75N65RH5XKSA1 is usually 5 days.

3.What payment methods are accepted for IKW75N65RH5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW75N65RH5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKW75N65RH5XKSA1?

IKW75N65RH5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKW75N65RH5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKW75N65RH5XKSA1?

For technical support, including IKW75N65RH5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW75N65RH5XKSA1 requirements.

6.How does Aetrix verify that IKW75N65RH5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKW75N65RH5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW75N65RH5XKSA1 meets industry standards.

7.What is the process for return or replacement of IKW75N65RH5XKSA1?

All IKW75N65RH5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKW75N65RH5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKW75N65RH5XKSA1 part is unused and in its original packaging.

Return procedure for IKW75N65RH5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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