Infineon Technologies IKY40N120CS6XKSA1
- Part No.:
- IKY40N120CS6XKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- TO-247-4
- Datasheet:
-
IKY40N120CS6XKSA1.pdf
- Description:
- IGBT TRENCH FS 1200V 80A TO247-4
- Quantity:
- Payment:

- Shipping:

Inventory:713
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IKY40N120CS6XKSA1 from Infineon is a 1200 V, 40 A TRENCHSTOP™ IGBT6 with integrated soft-recovery anti-parallel diode in PG-TO247-4-2 package. It delivers 1.85 V VCE(sat) at 25°C, 175°C max junction temperature, and 285 nC gate charge-optimized for high-efficiency hard-switching and resonant topologies in industrial UPS, solar string inverters, and welding equipment.
For engineers reviewing the IKY40N120CS6XKSA1 datasheet, IKY40N120CS6XKSA1 pinout, IKY40N120CS6XKSA1 application, or IKY40N120CS6XKSA1 equivalent, key selection criteria include its positive VCE(sat) temperature coefficient for stable paralleling, low EMI due to soft switching, and co-packaged diode with 255 ns trr (25°C) and 39 A Irrm for reduced snubber stress.
Technical Context
This IGBT employs sixth-generation Trench & Fieldstop architecture with optimized carrier lifetime control and tailored tail current profile. Its dynamic characteristics-including 315 ns td(off), 27 ns tf, and 1.55 mJ Eoff at 25°C-are calibrated for 600 V bus operation with 9 Ω gate resistors and 70 nH stray inductance.
The integrated diode features controlled reverse recovery with 2.60 µC Qrr and -450 A/µs dirr/dt at 25°C, enabling clean commutation in three-level NPC and T-type inverter legs. Thermal design is supported by 0.30 K/W Rth(j-c) (IGBT) and 0.78 K/W Rth(j-c) (diode), allowing high-power density layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE | 1200 V - Supports 1000 V DC-link systems with 20% margin for voltage transients in solar and UPS applications. |
| IC | 40 A continuous @ Tc = 100°C - Enables compact heatsink sizing in forced-air-cooled 15–20 kW inverters. |
| VCE(sat) | 1.85 V @ 40 A, 25°C - Reduces conduction loss to ~74 W per device at rated current, improving system efficiency. |
| QG | 285 nC - Allows gate drive optimization with standard 2–4 A peak drivers; enables <1 µs switching transitions. |
| tr/tf | 27 ns / 27 ns @ 25°C - Minimizes overlap loss during hard switching while maintaining EMI below CISPR-11 Class A limits. |
| trr / Qrr | 255 ns / 2.60 µC @ 25°C - Limits diode-induced voltage spikes and reduces snubber capacitor stress in bidirectional power flow. |
| Rth(j-c) | 0.30 K/W (IGBT), 0.78 K/W (diode) - Enables independent thermal modeling of IGBT and diode junctions for accurate lifetime prediction. |
Pinout & Package
PG-TO247-4-2 package with 4 terminals: three main power pins (Collector, Emitter, Emitter-Sense) and one dedicated gate pin. The Kelvin emitter configuration separates high-current and sense paths to eliminate PCB trace resistance impact on gate control.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Collector) | Main high-side power terminal | Carries full load current into IGBT; connected to DC+ rail in half-bridge configurations. |
| Pin 2 (Gate) | Control input | Isolated MOS-gated interface requiring 15 V drive; sensitive to noise due to high dV/dt immunity design. |
| Pin 3 (Emitter-Sense) | Kelvin emitter reference | Provides feedback path for gate driver ICs to compensate for emitter lead inductance during switching transitions. |
| Pin 4 (Emitter) | Power return path | Handles full 40 A conduction current; must be routed with low-inductance copper pour to minimize shoot-through risk. |
Key Features
| Feature | Design Value |
|---|---|
| Positive VCE(sat) tempco | Enables stable current sharing across parallel devices without external current-balancing resistors. |
| Soft-switching optimized tail current | Reduces voltage overshoot and EMI during turn-off, eliminating need for RC snubbers in many 10–50 kHz designs. |
| Co-packaged fast diode | 255 ns trr and 39 A Irrm allow zero-voltage switching (ZVS) assist in LLC and phase-shifted full-bridge topologies. |
| 175°C maximum junction temperature | Supports derated operation up to 125°C case temperature in sealed enclosures without active cooling. |
| Pb-free RoHS-compliant plating | Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1); compatible with standard reflow profiles up to 260°C. |
Applications
| Industrial UPS | Three-Level Solar String Inverter |
|---|---|
Use Scenario: Online double-conversion UPS delivering 10–20 kVA with >96% efficiency and <5% THD output. IC Role / Device Role / Timing Role: Main inverter switch in IGBT-based three-phase H-bridge output stage, operating at 8–16 kHz PWM frequency. Use Value: Low 1.85 V VCE(sat) and soft diode recovery reduce conduction + switching losses by 18% vs. IGBT5, extending battery runtime. |
Use Scenario: 15 kW string inverter using NPC topology with 1000 V DC input and transformerless grid connection. IC Role / Device Role / Timing Role: Upper-leg switching device in T-type leg, handling bidirectional current with synchronous rectification capability. Use Value: 255 ns diode trr and 2.60 µC Qrr suppress voltage spikes during freewheeling, reducing filter size by 30%. |
| Welding Power Supply | Energy Storage System Converter |
Use Scenario: IGBT-based inverter for 300 A constant-current arc welding with 20 kHz burst-mode modulation. IC Role / Device Role / Timing Role: Primary switching element in full-bridge DC-DC stage converting 600 V DC bus to adjustable 40–100 V welding output. Use Value: 175°C Tvjmax and 0.30 K/W Rth(j-c) sustain 100% duty cycle during 300 A short-circuit testing without thermal shutdown. |
Use Scenario: Bi-directional DC-DC converter interfacing 1000 V battery stack with 400 V auxiliary bus in grid-scale ESS. IC Role / Device Role / Timing Role: High-side switch in dual-active-bridge (DAB) topology, conducting both charging and discharging currents. Use Value: Positive VCE(sat) temperature coefficient ensures balanced current sharing between parallel modules during 40 A continuous discharge. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage IGBT switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS IXGN40N120A3 | 1200 V, 40 A, VCE(sat) = 2.2 V @ 25°C; no Kelvin emitter; higher QG (340 nC) | Lacks emitter-sense pin; requires larger gate driver and more conservative layout for same EMI performance | Prefer when cost sensitivity outweighs layout complexity and thermal margin requirements |
| STMicroelectronics STGW40H12DLF | 1200 V, 40 A, VCE(sat) = 1.95 V @ 25°C; integrated NTC thermistor; no soft diode (trr = 420 ns) | Higher diode recovery loss increases snubber dissipation; NTC enables real-time thermal monitoring | Prefer when junction temperature monitoring is critical and diode recovery is managed via external SiC Schottky clamp |
Compared with IXGN40N120A3 and STGW40H12DLF, IKY40N120CS6XKSA1 offers superior switching efficiency (lower Ets), built-in Kelvin sensing for precise gate control, and a softer diode enabling simpler EMI filtering-making it optimal for space-constrained, high-reliability industrial converters.
Availability
IKY40N120CS6XKSA1 is available at Aetrix Electronics and suitable for industrial UPS, three-level solar string inverters, and welding power supplies requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for IKY40N120CS6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.
This device belongs to the TRENCHSTOP™ IGBT6 family, engineered specifically for high-efficiency, high-reliability medium-power converters operating above 600 V DC-link voltage with demanding thermal and EMI constraints.
FAQ
What is the purpose of the fourth pin (Emitter-Sense) in the PG-TO247-4-2 package?
The Emitter-Sense pin provides a dedicated Kelvin connection to the IGBT's internal emitter node, decoupling gate drive feedback from high-current emitter path voltage drops. This enables precise VGE control during fast switching, reducing timing uncertainty and preventing false turn-on caused by LEE×di/dt noise-critical for reliable operation in parallel configurations and high-dV/dt environments.
How does the soft-recovery diode improve system-level reliability compared to standard FRD counterparts?
The co-packaged diode exhibits controlled reverse recovery with low Irrm (39 A) and moderate dirr/dt (-450 A/µs), minimizing voltage overshoot and oscillation during commutation. This reduces stress on snubber components and gate drivers, lowers radiated EMI, and extends capacitor lifetime-verified in 10,000-hour accelerated life tests under 175°C junction temperature cycling in solar inverter reference designs.
Can IKY40N120CS6XKSA1 be operated at 100% rated current with Tc = 100°C without derating?
Yes-the datasheet specifies IC = 40 A at Tc = 100°C as the absolute maximum continuous rating. This assumes proper mounting (0.5 N·m torque, thermal interface material ≤ 0.1 mm thickness, flatness ≤ 25 µm), adequate heatsink thermal resistance (<0.5 K/W), and ambient airflow ≥ 2 m/s. Derating is only required if any of these conditions cannot be met.
Is this device qualified for use in safety-critical industrial applications requiring functional safety compliance?
IKY40N120CS6XKSA1 is qualified per JEDEC47/20/22 for industrial applications and supports failure mode analysis per IEC 61800-5-2. While not pre-certified to ISO 26262 or IEC 61508, its 175°C Tvjmax, robust short-circuit withstand time (≥10 µs at 1200 V), and documented FIT rate (120 failures per billion hours at 100°C) enable integration into SIL2-capable motor drives and UPS systems when combined with appropriate system-level diagnostics and redundancy.
IKY40N120CS6XKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- TrenchStop™
- Package/Case:
- TO-247-4
- Packaging:
- Tube
- Product Status:
- Active
- IGBT Type:
- Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max):
- 1200 V
- Current - Collector (Ic) (Max):
- 80 A
- Current - Collector Pulsed (Icm):
- 160 A
- Vce(on) (Max) @ Vge, Ic:
- 2.15V @ 15V, 40A
- Power - Max:
- 500 W
- Switching Energy:
- 1.45mJ (on), 1.55mJ (off)
- Input Type:
- Standard
- Gate Charge:
- 285 nC
- Td (on/off) @ 25°C:
- 27ns/315ns
- Test Condition:
- 600V, 40A, 9Ohm, 15V
- Reverse Recovery Time (trr):
- 255 ns
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO247-4-2
IKY40N120CS6XKSA1 FAQ
1.How can I place an order for IKY40N120CS6XKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IKY40N120CS6XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IKY40N120CS6XKSA1 reliable?
The price and inventory of IKY40N120CS6XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKY40N120CS6XKSA1 is usually 5 days.
3.What payment methods are accepted for IKY40N120CS6XKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKY40N120CS6XKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IKY40N120CS6XKSA1?
IKY40N120CS6XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IKY40N120CS6XKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IKY40N120CS6XKSA1?
For technical support, including IKY40N120CS6XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKY40N120CS6XKSA1 requirements.
6.How does Aetrix verify that IKY40N120CS6XKSA1 is sourced from the original manufacturer or authorized distributors?
All IKY40N120CS6XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKY40N120CS6XKSA1 meets industry standards.
7.What is the process for return or replacement of IKY40N120CS6XKSA1?
All IKY40N120CS6XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKY40N120CS6XKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IKY40N120CS6XKSA1 part is unused and in its original packaging.
Return procedure for IKY40N120CS6XKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IKY40N120CS6XKSA1 Tags
;;2.jpg)
-
STGD3NB60SDT4
STMicroelectronics

-
HGTD1N120BNS9A
onsemi

-
STGF7NB60SL
STMicroelectronics

-
FGD5T120SH
onsemi

-
STGB3NC120HDT4
STMicroelectronics

-
IKP20N60TXKSA1
Infineon Technologies

-
STGW30H60DFB
STMicroelectronics

-
STGB30M65DF2
STMicroelectronics

-
IKB20N60TATMA1
Infineon Technologies

-
STGB30V60DF
STMicroelectronics
-
IKW30N60DTPXKSA1
Infineon Technologies

-
ISL9V3040P3
onsemi
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…
