Infineon Technologies IKZ50N65EH5XKSA1

Overview

IKZ50N65EH5XKSA1 from Infineon is a 650V, 50A high-speed TRENCHSTOP™ 5 IGBT copacked with a RAPID 1 fast/soft antiparallel diode in a PG-TO247-4 package featuring Kelvin emitter (pin K), standard emitter (pin E), gate (pin G), and collector (pin C). It delivers 1.65V V_CE(sat) at 25°C, 109 nC total gate charge, and 175°C max junction temperature for hard-switching and resonant topologies in solar string inverters and welding converters.

For engineers reviewing the IKZ50N65EH5XKSA1 datasheet, IKZ50N65EH5XKSA1 pinout, IKZ50N65EH5XKSA1 application, or IKZ50N65EH5XKSA1 equivalent, key selection criteria include Kelvin-emitter–enabled low-inductance switching, 53 ns diode reverse recovery time at 25°C, 0.41 mJ turn-on energy, thermal resistance of 0.55 K/W (junction-to-case), and compliance with JEDEC industrial reliability standards.

Technical Context

This IGBT implements TRENCHSTOP™ 5 trench-gate field-stop technology with a dedicated Kelvin emitter terminal to minimize gate loop inductance and suppress voltage spikes during high-di/dt switching. Its integrated RAPID 1 diode provides soft reverse recovery with 0.82 µC Q_rr and −1840 A/µs peak dirr/dt at 25°C.

The device operates across −40°C to +175°C junction temperature, supports 200 A pulsed collector current, and achieves best-in-class efficiency in mid-to-high-frequency (up to 50 kHz) industrial power converters due to ultra-low conduction and switching losses-enabled by 3100 pF input capacitance and 11 pF reverse transfer capacitance at 25 V.

Key Specifications

Pinout & Package

Package: PG-TO247-4 - 4-pin through-hole power package with isolated collector tab (backside), enabling low-inductance layout and direct thermal coupling to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Compared with IKW50N65ES5 and FGH50T65SQD, IKZ50N65EH5XKSA1 uniquely combines Kelvin emitter architecture, integrated RAPID 1 diode, and sub-1 mJ total switching energy-making it optimal for space-constrained, high-efficiency 30–50 kHz industrial inverters where layout-induced oscillation and diode-induced voltage overshoot must be minimized.

Availability

IKZ50N65EH5XKSA1 is available at Aetrix Electronics and suitable for solar string inverters, uninterruptible power supplies, and welding converters requiring stable component supply, long-term industrial lifecycle support, and RoHS-compliant manufacturing.

Supply support for IKZ50N65EH5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The TRENCHSTOP™ 5 High Speed series targets high-efficiency, high-frequency power conversion systems-including photovoltaic inverters, UPS, and industrial motor drives-where low switching loss, soft recovery, and thermal robustness are critical.

FAQ

What is the purpose of the Kelvin emitter (pin K) on IKZ50N65EH5XKSA1?

The Kelvin emitter provides a dedicated low-inductance path for gate driver feedback, isolating the gate control loop from high-current power paths. This prevents voltage spikes induced by emitter inductance during turn-off, eliminates false triggering, and enables stable operation at di/dt > 5 kA/µs-critical in half-bridge and three-phase inverter legs.

Can IKZ50N65EH5XKSA1 replace older IKZ50N65EH4 devices without redesign?

Yes-it is a plug-and-play replacement for IKZ50N65EH4 with identical pinout, package, and voltage/current ratings. Key improvements include lower V_CE(sat) (1.65 V vs. 1.75 V), reduced switching energy (0.60 mJ vs. 0.72 mJ), and enhanced diode softness, allowing immediate efficiency gains without layout or gate drive changes.

What is the maximum recommended gate resistor value for reliable turn-off?

With RG(off) = 20 Ω, the device achieves 250 ns td(off) and 21 ns tf at 25°C. Increasing RG(off) beyond 25 Ω risks excessive turn-off energy and thermal stress; values below 15 Ω may cause ringing. For 50 kHz operation, 18–22 Ω is optimal-verified in Infineon's application note AN2015-04 for TO247-4 Kelvin-emitter IGBTs.

Is the RAPID 1 diode rated for continuous conduction mode (CCM) in synchronous rectification?

No-the RAPID 1 diode is optimized for freewheeling and reverse recovery in hard-switched topologies, not sustained forward conduction. Its IF rating is 95 A at TC = 25°C but drops to 75 A at TC = 100°C; for CCM rectification, a dedicated Schottky or SiC diode with higher thermal margin is required.