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Infineon Technologies IKZA40N120CS7XKSA1

Part No.:
IKZA40N120CS7XKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
-
Datasheet:
AetrixIKZA40N120CS7XKSA1.pdf
Description:
IGBT
Quantity:
Payment:
Payment
Shipping:
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Inventory:156

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Product details

Overview

IKZA40N120CS7XKSA1 from Infineon is a short-circuit rugged 1200 V, 40 A TRENCHSTOP™ IGBT 7 co-packed with a full-current soft-recovery Emitter Controlled 7 diode in PG-TO247-4-STD-NT3.7 package; features VCE(sat) = 2.0 V at Tvj = 175°C, 8 µs short-circuit withstand time, and optimized hard-switching performance for 2-level inverters and 3-level NPC/T-type topologies in industrial power conversion.

For engineers reviewing the IKZA40N120CS7XKSA1 datasheet, IKZA40N120CS7XKSA1 pinout, IKZA40N120CS7XKSA1 application, or IKZA40N120CS7XKSA1 equivalent, key selection criteria include 1200 V blocking voltage, 40 A rated current, co-packaged diode Qrr and softness, thermal resistance Rth(j-c) = 0.42 K/W (IGBT), and gate charge QG = 230 nC for gate driver sizing.

Technical Context

This IGBT employs TRENCHSTOP™ 7 silicon technology with field-stop and trench-gate structures to achieve low conduction loss and controlled switching behavior. Its co-packaged Emitter Controlled 7 diode delivers low Qrr (2.5 µC typ. at 25°C) and soft reverse recovery (trr = 110 ns typ.), minimizing voltage overshoot and EMI in high-dv/dt inverter legs.

The device is rated for 1200 V DC collector-emitter voltage and supports hard-switching operation up to 175°C junction temperature, with validated short-circuit ruggedness of 8 µs under VCC ≤ 600 V and VGE = 15 V - enabling robust protection in motor drive and solar inverter fault conditions.

Key Specifications

ParameterValue and Actual Design Meaning
VCE1200 V - enables use in 1000 V DC-link industrial and solar applications without derating.
IC40 A - continuous current rating at Tc = 100°C, suitable for 15–25 kW inverter stages.
VCE(sat)2.0 V at Tvj = 175°C - low conduction loss improves efficiency and reduces heatsink requirements.
tSC8 µs - verified short-circuit withstand time allows reliable overcurrent protection with fast desat detection.
QG230 nC - determines gate driver peak current requirement (~57.5 A for 4 Ω turn-on resistor).
Rth(j-c) (IGBT)0.42 K/W - enables thermal design with direct case mounting and moderate heatsink interface resistance.
trr / Qrr110 ns / 2.5 µC at 25°C - soft, low-charge diode recovery reduces snubber stress and EMI filtering burden.

Pinout & Package

Package: PG-TO247-4-STD-NT3.7 - 4-pin through-hole package with isolated emitter (E2) for Kelvin sensing, supporting low-inductance gate drive and accurate VCE monitoring.

Pin/TerminalCircuit RoleDesign Meaning
Collector (C)Main power output terminalHigh-side switch node connection; carries full load current and handles 1200 V blocking.
Gate (G)Control inputDrives IGBT channel; requires <±20 V rating and low-impedance gate loop for stable switching.
Emitter (E1)Main emitter return pathCarries full load current; connects to DC-link negative or phase-leg midpoint in 3L topologies.
Emitter (E2)Kelvin emitter senseProvides isolated reference for gate driver feedback and precise VCE desat detection, reducing parasitic inductance impact.

Key Features

FeatureDesign Value
Co-packaged EC7 diodeFull-rated 40 A soft-recovery diode with 2.5 µC Qrr, eliminating need for external anti-parallel diode and reducing layout complexity.
Short-circuit ruggedness8 µs withstand time at 150°C junction temperature enables deterministic fault handling without latch-up in industrial drives.
dv/dt controllabilityWide operating range supports stable switching across 5–50 V/ns, easing EMI compliance in variable-speed drives.
TRENCHSTOP™ 7 processOptimized trade-off between VCE(sat) and switching losses yields 3.01 mJ total switching energy at 25°C for 600 V/40 A conditions.
Thermal performanceRth(j-c) = 0.42 K/W (IGBT) and 0.75 K/W (diode) allow parallel operation with matched thermal impedance in multi-phase systems.

Applications

Industrial Motor DrivesSolar String Inverters

Use Scenario: 15–30 kW 2-level or 3-level NPC inverter stage driving induction or PMSM motors in HVAC, pumps, and compressors.

IC Role / Device Role / Timing Role: Main switching device in upper/lower leg; handles 1200 V DC-link voltage and 40 A RMS phase current with hard-switching control.

Use Value: Short-circuit ruggedness and 175°C operation ensure reliability during stall, overload, and startup transients without derating.

Use Scenario: DC–AC conversion stage in string inverters with 1000 V nominal DC input and grid-tied AC output.

IC Role / Device Role / Timing Role: High-side IGBT in NPC or T-type topology; switches at 16–20 kHz with co-packaged diode managing freewheeling current.

Use Value: Low Qrr and soft recovery reduce diode-induced voltage spikes and snubber losses, improving system efficiency >98.5%.

Industrial UPS SystemsEnergy Storage Inverters

Use Scenario: Bi-directional inverter in double-conversion UPS delivering clean 50/60 Hz output with fast dynamic response.

IC Role / Device Role / Timing Role: Output stage switch handling bidirectional power flow; operates in both inverter and rectifier modes with same thermal profile.

Use Value: Matched IGBT/diode thermal resistance (Rth(j-c)) ensures balanced junction temperature rise during regeneration, extending lifetime.

Use Scenario: Grid-forming inverter interfacing lithium-ion battery banks (800–1000 V DC) to medium-voltage distribution networks.

IC Role / Device Role / Timing Role: Core switching element in 3L T-type topology; manages high dv/dt transitions while maintaining low EMI emissions.

Use Value: Wide dv/dt controllability and 8 µs SC rating support active fault ride-through (FRT) and grid-synchronization stability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IKW40N120H31200 V, 40 A TRENCHSTOP™ 3 IGBT; no co-packaged diode; higher VCE(sat) = 2.2 V at 175°C; 6 µs SC rating.Requires external diode; less suited for space-constrained designs needing integrated diode softness.Select when cost sensitivity outweighs diode integration benefit and thermal margin permits higher VCE(sat).
FF400R12ME41200 V, 400 A module with built-in NTC and press-fit terminals; includes anti-parallel diodes but larger footprint and higher gate charge (QG ≈ 1200 nC).Targeted at high-power (>100 kW) systems; not drop-in compatible due to package, pinout, and drive requirements.Choose for scalable multi-kW platforms where module-level integration and thermal management supersede discrete flexibility.

Compared with IKW40N120H3 and FF400R12ME4, IKZA40N120CS7XKSA1 uniquely combines discrete-level design freedom, integrated soft diode, and 8 µs short-circuit ruggedness - making it optimal for compact, high-reliability 15–30 kW industrial inverters requiring minimal external components and precise fault control.

Availability

IKZA40N120CS7XKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, solar string inverters, and energy storage inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp and field replacement.

Supply support for IKZA40N120CS7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This part belongs to the TRENCHSTOP™ IGBT 7 product line, engineered specifically for high-efficiency, high-reliability hard-switching applications in industrial drives and solar inverters where short-circuit robustness and thermal stability are critical.

FAQ

What is the purpose of the 4th pin (E2) on the IKZA40N120CS7XKSA1?

The E2 pin is a Kelvin emitter terminal isolated from the main emitter (E1). It provides a dedicated low-inductance path for gate driver feedback and VCE desaturation detection, enabling accurate real-time monitoring of IGBT saturation voltage without interference from power loop voltage drops.

Can IKZA40N120CS7XKSA1 be used in 3-level T-type inverters?

Yes - its 1200 V blocking voltage, 40 A current rating, and co-packaged soft diode make it suitable for high-side and low-side positions in 3-level T-type inverters. The device's 8 µs short-circuit rating and dv/dt controllability support safe operation during shoot-through fault conditions common in T-type topologies.

How does the Emitter Controlled 7 diode differ from standard FRD diodes?

The EC7 diode features tailored carrier lifetime control and optimized doping profiles to deliver lower Qrr (2.5 µC vs. >4 µC typical for FRDs), reduced peak reverse recovery current (Irrm = 63 A), and soft recovery (no current snap-off), minimizing voltage overshoot and EMI generation during commutation in high-frequency inverters.

Is thermal derating required when operating above 100°C case temperature?

Yes - the datasheet specifies IC = 40 A at Tc = 100°C and IC = 82 A at Tc = 25°C. Operation above 100°C requires linear derating per the Rth(j-c) = 0.42 K/W curve; junction temperature must remain ≤175°C, and Infineon recommends staying below 80% of max ratings for long-term reliability.

IKZA40N120CS7XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
-
Packaging:
Tube
Product Status:
Active
IGBT Type:
-
Voltage - Collector Emitter Breakdown (Max):
-
Current - Collector (Ic) (Max):
-
Current - Collector Pulsed (Icm):
-
Vce(on) (Max) @ Vge, Ic:
-
Power - Max:
-
Switching Energy:
-
Input Type:
-
Gate Charge:
-
Td (on/off) @ 25°C:
-
Test Condition:
-
Reverse Recovery Time (trr):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

IKZA40N120CS7XKSA1 FAQ

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Please submit a Request for Quotation (RFQ) for IKZA40N120CS7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of IKZA40N120CS7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKZA40N120CS7XKSA1 is usually 5 days.

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IKZA40N120CS7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

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For technical support, including IKZA40N120CS7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKZA40N120CS7XKSA1 requirements.

6.How does Aetrix verify that IKZA40N120CS7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKZA40N120CS7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKZA40N120CS7XKSA1 meets industry standards.

7.What is the process for return or replacement of IKZA40N120CS7XKSA1?

All IKZA40N120CS7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKZA40N120CS7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKZA40N120CS7XKSA1 part is unused and in its original packaging.

Return procedure for IKZA40N120CS7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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