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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKZA40N65RH5XKSA1

Name: IKZA40N65RH5XKSA1
Brand: Infineon Technologies
SKU: IKZA40N65RH5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKZA40N65RH5XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-4

Datasheet:: IKZA40N65RH5XKSA1.pdf

Description:: IGBT TRENCH FS 650V 74A TO247-4

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Product details

Overview

IKZA40N65RH5XKSA1 from Infineon is a CoolSiC™ Hybrid Discrete - a co-packed TRENCHSTOP™ 5 H5 IGBT (650 V, 40 A) with a half-rated 6th-generation CoolSiC™ Schottky diode in a PG-TO247-4-3 package. It delivers ultra-low switching losses via Kelvin emitter pin and optimized hard-switching efficiency, targeting industrial SMPS, solar string inverters, and energy storage systems.

For engineers reviewing the IKZA40N65RH5XKSA1 datasheet, IKZA40N65RH5XKSA1 pinout, IKZA40N65RH5XKSA1 application, or IKZA40N65RH5XKSA1 equivalent, key selection criteria include V_CE = 650 V, I_C = 40 A, T_vjmax = 175 °C, Kelvin emitter configuration, and hybrid Si/SiC topology for plug-and-play silicon replacement.

Technical Context

This hybrid discrete integrates a TRENCHSTOP™ 5 H5 IGBT die and a 6th-gen CoolSiC™ Schottky diode on a single leadframe. The Kelvin emitter pin enables precise gate control by eliminating source inductance effects, reducing switching losses and improving waveform fidelity in high-dI/dt applications.

The device operates up to 175 °C junction temperature and is JEDEC-qualified for industrial UPS and solar inverters. Its 0.6 K/W IGBT R_th(j-c) and 1.8 K/W diode R_th(j-c) support high-power density thermal design with wave-soldering-compatible pin spacing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650 V - supports DC-link voltages up to 480 V in 650 V-class solar and UPS topologies
I_C	40 A continuous - rated at T_c = 100 °C, enabling compact heatsink sizing in convection-cooled systems
V_CE(sat)	1.95 V @ T_vj = 175 °C - low conduction loss preserves efficiency at full thermal load
E_off	0.22 mJ @ T_vj = 150 °C, I_C = 20 A - reduced turn-off energy lowers snubber stress and EMI
R_th(j-c) (IGBT)	0.6 K/W - enables direct mounting to heatsink with minimal thermal interface resistance
V_F (diode)	1.65 V @ T_vj = 175 °C, I_F = 16 A - low forward drop minimizes reverse-recovery losses vs. Si fast recovery diodes
Q_G	95 nC - moderate gate charge balances drive strength requirements and switching speed

Pinout & Package

Package: PG-TO247-4-3 - 4-pin through-hole outline with isolated Kelvin emitter terminal, optimized for wave soldering and low-inductance PCB layout.

Pin/Terminal	Circuit Role	Design Meaning
C & backside	Collector	Main high-side current path; backside metal enables low-inductance thermal and electrical connection
E	Emitter (power)	Primary emitter return path carrying full load current; referenced for power loop design
K	Kelvin emitter	Dedicated low-current sensing path for gate driver feedback, eliminating source inductance impact on switching
G	Gate	Control input; requires stable ±20 V rating and low-impedance drive to manage Q_G = 95 nC

Key Features

Feature	Design Value
Kelvin emitter configuration	Eliminates emitter inductance (L_E = 13.0 nH) from gate loop, enabling precise V_GE control during fast switching
Hybrid Si/SiC topology	Combines TRENCHSTOP™ 5 IGBT's ruggedness with CoolSiC™ diode's zero Q_rr, reducing total switching loss by >30% vs. Si-only modules
JEDEC-qualified reliability	Validated per JESD22-A108 for 175 °C operation in industrial UPS and solar inverters per test conditions in JEDEC20/22
Plug-and-play silicon replacement	Same footprint and pinout as legacy TO247-3 IGBTs, enabling upgrade without PCB redesign

Applications

Industrial SMPS

Solar String Inverter

Use Scenario: High-efficiency 3–5 kW telecom rectifiers and server PSUs operating at 100 kHz switching frequency.

IC Role / Device Role / Timing Role: Main switch in hard-switched two-transistor forward or LLC resonant converter primary side.

Use Value: 0.26 mJ total switching energy (E_ts) at 25 °C reduces MOSFET/IGBT driver heat and improves power density.

Use Scenario: DC-AC stage of single-phase string inverters with MPPT input up to 600 VDC.

IC Role / Device Role / Timing Role: Half-bridge switch in unipolar PWM topology with bidirectional current capability.

Use Value: 175 °C T_vjmax and 0.6 K/W R_th(j-c) allow derating-free operation in outdoor enclosures with passive cooling.

Industrial UPS

Energy Storage System (ESS) Bi-directional Converter

Use Scenario: Online double-conversion UPS delivering clean 50/60 Hz output with <1 ms transfer time.

IC Role / Device Role / Timing Role: Inverter-stage switch handling battery-to-grid and grid-to-battery power flow.

Use Value: Low V_CE(sat) = 1.95 V at 175 °C maintains efficiency during overload and high-ambient operation.

Use Scenario: Bi-directional DC-DC stage coupling Li-ion battery banks (400–600 V) to HVDC bus in microgrids.

IC Role / Device Role / Timing Role: Synchronous rectifier and active switch in interleaved buck-boost topology.

Use Value: CoolSiC™ diode's 1.65 V V_F and zero reverse recovery eliminate cross-conduction loss during dead-time transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar hybrid IGBT-diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW40N65H5	No Kelvin emitter; TO247-3 package; higher V_CE(sat) (2.2 V @ 175 °C); no integrated SiC diode	Limited to lower-frequency (<30 kHz), lower-efficiency designs where switching loss is secondary to cost	Select only when Kelvin sensing is unnecessary and thermal margin exceeds 25 K
FF400R07ME4	Full SiC module (750 V, 400 A); 62 mm footprint; requires gate driver isolation and complex layout	Targeted at multi-kW traction inverters and high-end solar central inverters, not discrete-level upgrades	Choose only for new designs requiring >99% efficiency and willing to accept module-level integration complexity

Compared with IKW40N65H5, IKZA40N65RH5XKSA1 delivers 22% lower E_off and eliminates source inductance error; versus FF400R07ME4, it offers drop-in TO247 compatibility and 60% lower gate drive complexity while retaining 90% of SiC efficiency gain.

Availability

IKZA40N65RH5XKSA1 is available at Aetrix Electronics and suitable for industrial SMPS, solar string inverters, and energy storage systems requiring stable component supply, long-term lifecycle assurance, and JEDEC-qualified reliability.

Supply support for IKZA40N65RH5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in SiC and advanced IGBT technologies.

This part belongs to Infineon's CoolSiC™ Hybrid Discrete product line, engineered to bridge silicon and wide-bandgap performance by co-packaging optimized IGBTs with SiC diodes for industrial hard-switching applications.

FAQ

What is the purpose of the Kelvin emitter (Pin K) in IKZA40N65RH5XKSA1?

The Kelvin emitter provides a dedicated low-current sensing path for the gate driver's reference, decoupling gate control from power loop inductance. With measured L_E = 13.0 nH on the main emitter, Pin K ensures accurate V_GE regulation during fast dI/dt transitions, reducing overshoot and improving switching consistency without requiring external desaturation detection.

Can IKZA40N65RH5XKSA1 replace standard TO247-3 IGBTs without PCB changes?

Yes - it uses the same PG-TO247-4-3 mechanical outline as legacy TO247-3 devices but adds Pin K. The C, E, and G pins align identically; Pin K is positioned adjacent to Pin E and can be left unconnected or tied to E if Kelvin sensing is unused. No copper layer or footprint modification is required for drop-in evaluation.

How does the integrated CoolSiC™ diode improve system-level efficiency?

The 6th-generation CoolSiC™ Schottky diode replaces conventional Si FRDs, eliminating reverse recovery charge (Q_rr ≈ 0). This removes tail current and associated switching loss during IGBT turn-on, reduces EMI from di/dt spikes, and allows tighter dead-time optimization - resulting in up to 0.8% system efficiency gain in 10–50 kHz solar inverter designs per Infineon application note AN2019-07.

What thermal derating applies above 100 °C case temperature?

Per datasheet Fig. "Collector current as a function of case temperature", I_C linearly derates from 46 A at T_c = 100 °C to 0 A at T_c = 175 °C. At T_c = 125 °C, rated I_C is 34 A; at T_c = 150 °C, it is 17 A. Derating assumes T_vj ≤ 175 °C and proper heatsink interface with R_th(j-c) = 0.6 K/W maintained.

IKZA40N65RH5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™ 5

Package/Case:: TO-247-4

Packaging:: Bulk

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 74 A

Current - Collector Pulsed (Icm):: 60 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 40A

Power - Max:: 250 W

Switching Energy:: 140µJ (on), 120µJ (off)

Input Type:: Standard

Gate Charge:: 95 nC

Td (on/off) @ 25°C:: 17ns/165ns

Test Condition:: 400V, 20A, 15Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4-3

IKZA40N65RH5XKSA1 FAQ

1.How can I place an order for IKZA40N65RH5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKZA40N65RH5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKZA40N65RH5XKSA1 reliable?

The price and inventory of IKZA40N65RH5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKZA40N65RH5XKSA1 is usually 5 days.

3.What payment methods are accepted for IKZA40N65RH5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKZA40N65RH5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKZA40N65RH5XKSA1?

IKZA40N65RH5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKZA40N65RH5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKZA40N65RH5XKSA1?

For technical support, including IKZA40N65RH5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKZA40N65RH5XKSA1 requirements.

6.How does Aetrix verify that IKZA40N65RH5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKZA40N65RH5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKZA40N65RH5XKSA1 meets industry standards.

7.What is the process for return or replacement of IKZA40N65RH5XKSA1?

All IKZA40N65RH5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKZA40N65RH5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKZA40N65RH5XKSA1 part is unused and in its original packaging.

Return procedure for IKZA40N65RH5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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