Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMBG120R181M2HXTMA1

Name: IMBG120R181M2HXTMA1
Brand: Infineon Technologies
SKU: IMBG120R181M2HXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IMBG120R181M2HXTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Datasheet:: IMBG120R181M2HXTMA1.pdf

Description:: SIC DISCRETE

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:128

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IMBG120R181M2HXTMA1 from Infineon is a 1200 V, 10.5 A silicon carbide (SiC) MOSFET in PG-TO263-7-U01 package, featuring 181.4 mΩ R_DS(on) at 18 V gate drive and 25°C junction temperature, 2 µs short-circuit withstand time, and Kelvin-source sensing for precise gate control. It serves as a high-efficiency power switch in EV charging systems operating up to 200°C junction temperature.

For engineers reviewing the IMBG120R181M2HXTMA1 datasheet, IMBG120R181M2HXTMA1 pinout, IMBG120R181M2HXTMA1 application, or IMBG120R181M2HXTMA1 equivalent, key selection criteria include its 1200 V blocking capability, low switching losses (E_on = 20 µJ, E_off = 5.2 µJ @ 800 V), robust body diode for hard commutation, and -5 V to 18 V recommended gate voltage range.

Technical Context

This CoolSiC™ G2 MOSFET employs a trench-gate SiC structure with optimized charge balance, enabling ultra-low C_oss (12 pF) and C_rss (1 pF) for fast, low-loss switching. Its 4.2 V gate threshold voltage (V_GS(th)) and 15 Ω internal gate resistance support stable turn-on while resisting parasitic turn-on under high dV/dt.

The device integrates a Kelvin source terminal (Pin 2) electrically isolated from main source pins (Pins 3–7), enabling accurate gate-drive loop decoupling and minimizing dynamic R_DS(on) rise during high di/dt events. Thermal performance is enhanced by Infineon's .XT interconnection technology, delivering R_th(j-c) = 1.22 K/W.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	1200 V - Enables use in 1000 V DC bus systems with 20% safety margin, e.g., EV charging and industrial UPS.
R_DS(on)	181.4 mΩ @ V_GS = 18 V, T_vj = 25°C - Determines conduction loss in continuous operation; rises to 429 mΩ at 175°C.
I_D_DC	10.5 A @ T_C = 100°C - Specifies maximum sustainable current under real thermal conditions in TO263-7L heatsink mounting.
t_SC	2 µs @ V_DD ≤ 800 V, V_GS(on) = 15 V - Defines safe fault-clearing window before thermal runaway in short-circuit events.
V_GS(th)	4.2 V (typ.) - Ensures reliable turn-on with standard 15 V gate drivers while maintaining noise immunity above 3.5 V min.
E_on/E_off	20 µJ / 5.2 µJ @ 800 V, 3.8 A - Quantifies energy loss per switching cycle; enables >100 kHz operation with low thermal burden.
T_vj(max)	175°C continuous, 200°C overload (100 h cumulative) - Supports high-power density designs with reduced heatsinking requirements.

Pinout & Package

Package: PG-TO263-7-U01 (7-pin D²PAK variant with Kelvin source), surface-mount, thermally enhanced with exposed drain tab.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Main gate input; connects to external gate driver output; requires low-inductance routing to minimize oscillation.
Pin 2	Kelvin Sense Contact	Dedicated low-current gate return path; must be routed separately from high-current source to avoid voltage drop error in gate drive loop.
Pins 3–7	Source	Main power source terminals; paralleled for low inductance and current sharing; not interchangeable with Pin 2.
Tab	Drain	High-current drain connection; electrically tied to PCB copper pour for thermal dissipation and EMI control.

Key Features

Feature	Design Value
Robust body diode for hard commutation	Forward recovery energy E_fr = 14 µJ @ 25°C; supports zero-voltage switching (ZVS) and bidirectional current flow without external anti-parallel diode.
.XT interconnection technology	R_th(j-c) = 1.22 K/W - Reduces thermal resistance by ~25% vs. standard wire-bonded TO263, enabling higher power density.
Benchmark V_GS(th) and noise immunity	V_GS(th) = 4.2 V (typ.), min. 3.5 V - Prevents unintended turn-on during high dV/dt transients common in SiC half-bridges.
Short-circuit ruggedness	2 µs withstand time at 15 V gate drive - Allows sufficient time for protection circuitry (e.g., DESAT detection) to respond before failure.
Wide gate voltage range	V_GS = –5 V to +18 V - Enables active Miller clamping and negative turn-off bias to suppress false triggering in noisy environments.

Applications

EV Charging Station

Online UPS System

Use Scenario: Bidirectional AC/DC and DC/DC conversion in 15–30 kW modular EV chargers with liquid-cooled heatsinks.

IC Role / Device Role / Timing Role: High-side/low-side switching element in totem-pole PFC and isolated DC/DC stages; operates at 70–100 kHz.

Use Value: 1200 V rating supports 1000 V battery architectures; low E_on/E_off reduces cooling requirements and improves system efficiency to >98%.

Use Scenario: Double-conversion online UPS for data centers requiring <5 ms switchover and >96% efficiency at full load.

IC Role / Device Role / Timing Role: Inverter-stage switch handling 400–800 V DC bus; configured in three-phase IGBT/SiC hybrid or full-SiC topology.

Use Value: 200°C overload capability ensures reliability during sustained overloads; Kelvin source enables precise gate control under high di/dt.

String Solar Inverter

General Purpose Drive

Use Scenario: Central or string inverters converting 600–1000 V PV array DC to grid-synchronized AC, operating outdoors with wide ambient range.

IC Role / Device Role / Timing Role: DC-link switch in NPC or T-type multilevel topologies; switching frequency 16–25 kHz with soft-switching.

Use Value: Low C_oss (12 pF) and C_rss (1 pF) minimize capacitive turn-on loss; robust body diode eliminates need for discrete antiparallel Si diodes.

Use Scenario: Industrial motor drives (0.75–15 kW) for pumps, fans, and conveyors with regenerative braking and harmonic filtering.

IC Role / Device Role / Timing Role: Inverter leg switch in 3-phase bridge; handles PWM at 8–16 kHz with field-oriented control (FOC).

Use Value: 10.5 A continuous current at 100°C case temperature supports compact heatsink design; 181.4 mΩ R_DS(on) limits conduction loss to <2.5 W at rated load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0160120K	R_DS(on) = 160 mΩ (lower), but no Kelvin source; V_GS(th) = 3.2 V (lower), increasing noise sensitivity.	Lacks dedicated Kelvin sense, limiting gate-loop optimization in high-di/dt PFC stages.	Prefer when cost-driven and gate drive layout allows conservative noise margins.
ROHM SCT3160KL	R_DS(on) = 160 mΩ, V_GS(th) = 4.5 V, but only 6-pin TO247-6L package; no Kelvin source pin.	Higher package inductance and absence of Kelvin sensing reduce switching efficiency in >50 kHz designs.	Choose for legacy TO247 footprint compatibility where layout constraints prevent TO263-7L adoption.

Compared with C3M0160120K and SCT3160KL, IMBG120R181M2HXTMA1 trades slightly higher R_DS(on) for integrated Kelvin source and superior short-circuit ruggedness (2 µs), making it optimal for high-reliability, high-frequency PFC and inverter stages where gate-loop integrity is critical.

Availability

IMBG120R181M2HXTMA1 is available at Aetrix Electronics and suitable for EV charging stations, online UPS systems, and string solar inverters requiring stable component supply across multi-year production cycles.

Supply support for IMBG120R181M2HXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the CoolSiC™ G2 family-designed specifically for high-efficiency, high-reliability 1200 V power conversion in industrial, renewable energy, and e-mobility applications.

FAQ

What gate driver is recommended for IMBG120R181M2HXTMA1?

Infineon recommends gate drivers with ±5 A peak output, negative turn-off capability (–5 V), and low propagation delay (<50 ns), such as the 1ED34xx or 2EDF7275K families. The Kelvin source pin requires separate low-inductance routing to the driver's source return, independent of high-current source paths, to maintain accurate gate voltage control during fast switching.

Can IMBG120R181M2HXTMA1 replace silicon IGBTs directly in existing designs?

No direct drop-in replacement is possible due to differences in gate drive requirements (SiC needs higher V_GS, faster edges, and negative turn-off bias) and lower gate charge (Q_G = 9.7 nC vs. typical IGBT Q_G > 100 nC). Layout changes-including Kelvin source routing, gate resistor optimization, and desaturation protection tuning-are required to leverage SiC benefits safely.

What is the significance of the "M2H" suffix in the part number?

The "M2H" denotes the specific CoolSiC™ G2 die revision and thermal performance grade: "M" indicates the 181 mΩ R_DS(on) variant, "2" signifies second-generation gate oxide process, and "H" confirms qualification for industrial applications per JEDEC JESD22-A108 and JESD47 standards, including 1000-cycle temperature cycling and 1000-hour HTRB testing.

Is the body diode suitable for freewheeling in hard-switched topologies?

Yes-the integrated body diode is characterized for hard commutation with forward recovery energy E_fr = 14 µJ (25°C) and peak forward recovery current I_frm = 24 A. It supports ZVS transitions and eliminates need for external antiparallel diodes in totem-pole PFC and phase-shifted full-bridge converters, provided gate drive timing avoids simultaneous conduction.

IMBG120R181M2HXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™ Gen 2

Package/Case:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 1200 V

Current - Continuous Drain (Id) @ 25°C:: 14.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 18V

Rds On (Max) @ Id, Vgs:: 181.4mOhm @ 3.9A, 18V

Vgs(th) (Max) @ Id:: 5.1V @ 1.2mA

Gate Charge (Qg) (Max) @ Vgs:: 9.7 nC @ 18 V

Vgs (Max):: +23V, -10V

Input Capacitance (Ciss) (Max) @ Vds:: 350 pF @ 800 V

FET Feature:: -

Power Dissipation (Max):: 94W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-12

IMBG120R181M2HXTMA1 FAQ

1.How can I place an order for IMBG120R181M2HXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMBG120R181M2HXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMBG120R181M2HXTMA1 reliable?

The price and inventory of IMBG120R181M2HXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMBG120R181M2HXTMA1 is usually 5 days.

3.What payment methods are accepted for IMBG120R181M2HXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMBG120R181M2HXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMBG120R181M2HXTMA1?

IMBG120R181M2HXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMBG120R181M2HXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMBG120R181M2HXTMA1?

For technical support, including IMBG120R181M2HXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMBG120R181M2HXTMA1 requirements.

6.How does Aetrix verify that IMBG120R181M2HXTMA1 is sourced from the original manufacturer or authorized distributors?

All IMBG120R181M2HXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMBG120R181M2HXTMA1 meets industry standards.

7.What is the process for return or replacement of IMBG120R181M2HXTMA1?

All IMBG120R181M2HXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMBG120R181M2HXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMBG120R181M2HXTMA1 part is unused and in its original packaging.

Return procedure for IMBG120R181M2HXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …