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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMBG40R011M2HXTMA1

Name: IMBG40R011M2HXTMA1
Brand: Infineon Technologies
SKU: IMBG40R011M2HXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMBG40R011M2HXTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Datasheet:: IMBG40R011M2HXTMA1.pdf

Description:: SIC-MOS

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IMBG40R011M2HXTMA1 from Infineon is a 400 V, 11.3 mΩ typ. R_DS(on) silicon carbide (SiC) MOSFET in PG-TO263-7 package, rated for 133 A continuous drain current at T_C = 25 °C. It features a commutation-robust fast body diode (Q_rr = 85 nC), low gate charge (Q_g = 85 nC), and benchmark V_GS(th) of 4.5 V, optimized for high-frequency switching in solar PV inverters and UPS systems.

For engineers reviewing the IMBG40R011M2HXTMA1 datasheet, IMBG40R011M2HXTMA1 pinout, IMBG40R011M2HXTMA1 application, or IMBG40R011M2HXTMA1 equivalent, key selection criteria include its 0.35 °C/W R_thJC, 100% avalanche tested rating, 18 V max gate drive, and thermal performance enabled by Infineon's .XT interconnection technology.

Technical Context

This CoolSiC™ G2 MOSFET employs a trench-gate SiC structure enabling low conduction loss (R_DS(on) = 11.3 mΩ @ V_GS = 18 V, I_D = 37.1 A, T_j = 25 °C) and fast switching with t_d(on) = 15.8 ns and t_f = 9.3 ns under defined test conditions. Its body diode exhibits low Q_rr (85 nC) and short t_fr (18.2 ns), supporting synchronous rectification without external diode.

The device operates across T_j = –55 to +175 °C, supports gate drive from 0 V to 18 V, and delivers 220 mJ single-pulse avalanche energy (I_D = 37.1 A, R_L = 25 Ω). Thermal design leverages 6 cm² copper on FR4 PCB and low R_thJC for high-power density layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	400 V - Maximum blocking voltage for 400 V bus applications like solar string inverters and industrial UPS.
R_DS(on), typ.	11.3 mΩ @ V_GS = 18 V, I_D = 37.1 A, T_j = 25 °C - Enables <1.5 W conduction loss at 37 A, reducing heatsink size.
I_D, cont.	133 A @ T_C = 25 °C - Supports high-current half-bridge legs in motor drives and Class-D amplifiers.
Q_g	85 nC - Low total gate charge reduces driver power and enables >500 kHz switching in resonant topologies.
E_oss	9.9 μJ - Low output energy minimizes turn-off loss and improves efficiency in hard-switched SMPS.
R_thJC	0.35 °C/W - Enables direct thermal coupling to heatsink, critical for compact 3–5 kW power stages.
V_GS(th)	4.5 V typ. - Ensures robust noise immunity and stable turn-on with standard 5 V or 15 V gate drivers.

Pinout & Package

Package: PG-TO263-7 (D²PAK-7L), surface-mount, drain-tab-down configuration with isolated gate-source terminals and integrated Kelvin source connection for accurate gate control.

Pin/Terminal	Circuit Role	Design Meaning
Drain Tab (exposed pad)	Main power drain path	Primary thermal and current path; must be soldered to large copper pour for R_thJC = 0.35 °C/W.
Pin 1	Gate	High-impedance control input; requires low-inductance gate loop to minimize ringing during 15.8 ns turn-on delay.
Pin 2	Driver Source (Kelvin Source)	Reference for gate driver IC feedback; separates high-current source return from gate control loop to suppress V_GS distortion.
Pins 3–7	Power Source	Parallel low-inductance source connections; carry full load current (up to 133 A) and reduce source inductance in high-dI/dt operation.

Key Features

Feature	Design Value
Commutation-robust body diode	Q_rr = 85 nC, t_fr = 18.2 ns - Enables zero-voltage switching (ZVS) in LLC and reduces reverse recovery loss vs. silicon.
.XT interconnection technology	0.35 °C/W R_thJC - Achieves 30% lower junction-to-case resistance than standard D²PAK, improving thermal headroom at 175 °C.
100% avalanche tested	220 mJ single-pulse E_AS - Guarantees ruggedness in overvoltage transients common in motor drive regeneration and inductive load switching.
Benchmark V_GS(th)	4.5 V typ., 3.5–5.6 V range - Provides tight threshold distribution for parallel operation and reliable turn-on with 5 V logic-level drivers.
Low C_iss/C_oss ratio	C_iss = 3770 pF, C_oss = 494 pF - Improves Miller immunity and enables stable operation with high dV/dt (>50 V/ns) in fast-switching converters.

Applications

Solar PV Inverters

UPS & Energy Storage Systems

Use Scenario: Three-phase string inverter DC–AC stage operating at 400 V bus with 50–100 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side/low-side switch in totem-pole PFC and inverter bridge, handling up to 133 A peak phase current.

Use Value: 11.3 mΩ R_DS(on) and 9.9 μJ E_oss enable >99% efficiency at 5 kW per phase while maintaining thermal margin at T_j ≤ 150 °C.

Use Scenario: Bidirectional DC–DC converter in modular battery energy storage (BESS), charging/discharging at 48–800 V.

IC Role / Device Role / Timing Role: Synchronous rectifier and active switch in dual-active-bridge (DAB) topology with soft-switching control.

Use Value: Fast body diode (t_fr = 18.2 ns, Q_rr = 85 nC) eliminates need for external SiC Schottky, reducing BOM count and layout area.

Class-D Audio Amplifiers

Industrial Motor Drives

Use Scenario: 1–3 kW high-fidelity audio amplifier output stage requiring low THD+N and wide bandwidth.

IC Role / Device Role / Timing Role: Half-bridge power switch modulating audio signal at 300–600 kHz carrier frequency.

Use Value: Low gate charge (Q_g = 85 nC) and minimal C_oss nonlinearity preserve signal integrity and reduce PWM distortion at high slew rates.

Use Scenario: 7.5–15 kW servo drive inverter stage with field-oriented control (FOC) and regenerative braking.

IC Role / Device Role / Timing Role: Inverter leg switch handling 133 A continuous current and absorbing 220 mJ avalanche energy during fault events.

Use Value: 100% avalanche qualification and 175 °C T_j(max) ensure reliability during motor stall, short-circuit, and rapid deceleration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0011090D	R_DS(on) = 11.5 mΩ, V_DS = 900 V, Q_g = 72 nC, TO-247-4L package	Higher voltage rating increases cost and gate drive complexity for 400 V systems; lacks Kelvin source.	Select only if system requires 900 V capability or legacy TO-247 footprint compatibility.
ROHM SCT3110AL	R_DS(on) = 11.5 mΩ, V_DS = 650 V, Q_g = 92 nC, TO-263-7 package, no Kelvin source	Higher Q_g increases driver loss; absence of Kelvin source limits high-frequency stability in high-dI/dt designs.	Prefer when cost sensitivity outweighs gate-loop optimization needs and 650 V margin is required.

Compared with C3M0011090D and SCT3110AL, IMBG40R011M2HXTMA1 offers superior thermal resistance (0.35 °C/W vs. ≥0.45 °C/W), integrated Kelvin source for precise gate control, and tighter V_GS(th) distribution-making it optimal for high-density, high-reliability 400 V industrial inverters.

Availability

IMBG40R011M2HXTMA1 is available at Aetrix Electronics and suitable for solar PV inverters, UPS & energy storage systems, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IMBG40R011M2HXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power, sensor, and automotive ICs, with core expertise in silicon carbide and gallium nitride power devices.

This part belongs to the CoolSiC™ G2 family, engineered specifically for high-efficiency, high-power-density switching applications in renewable energy, industrial automation, and EV infrastructure where thermal performance and ruggedness are critical.

FAQ

What is the maximum recommended gate drive voltage for IMBG40R011M2HXTMA1?

The absolute maximum gate–source voltage is 23 V (static) and 25 V (transient, t ≤ 500 ns). Infineon specifies 0 V to 18 V as the recommended operating range. Driving above 18 V provides diminishing R_DS(on) improvement while increasing gate oxide stress and risk of overvoltage failure during transients.

Does IMBG40R011M2HXTMA1 require a negative turn-off voltage?

No. The device is characterized and qualified for 0 V turn-off (V_GS(off) = 0 V). Its V_GS(th) of 4.5 V typ. and low leakage (<100 nA at V_GS = 20 V) ensure safe turn-off without negative bias, simplifying gate driver design in cost-sensitive applications.

How is the Kelvin source (Pin 2) used in layout?

Pin 2 (Driver Source) must connect directly to the gate driver IC's source reference pin via a dedicated low-inductance trace, separate from the high-current Power Source (Pins 3–7). This isolates gate loop impedance from source inductance, preventing V_GS undershoot/overshoot during 100+ A/μs switching transitions.

Is IMBG40R011M2HXTMA1 suitable for paralleling?

Yes-its tight V_GS(th) distribution (3.5–5.6 V) and positive R_DS(on) temperature coefficient enable stable current sharing. For reliable paralleling, match gate resistors, use symmetrical layout with identical trace lengths, and ensure uniform thermal mounting across all devices.

IMBG40R011M2HXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 13.4A (Ta), 133A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 18V

Rds On (Max) @ Id, Vgs:: 14.4mOhm @ 37.1A, 18V

Vgs(th) (Max) @ Id:: 5.6V @ 13.3mA

Gate Charge (Qg) (Max) @ Vgs:: 85 nC @ 18 V

Vgs (Max):: +23V, -7V

Input Capacitance (Ciss) (Max) @ Vds:: 3770 pF @ 200 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 429W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-11

IMBG40R011M2HXTMA1 FAQ

1.How can I place an order for IMBG40R011M2HXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMBG40R011M2HXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMBG40R011M2HXTMA1 reliable?

The price and inventory of IMBG40R011M2HXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMBG40R011M2HXTMA1 is usually 5 days.

3.What payment methods are accepted for IMBG40R011M2HXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMBG40R011M2HXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMBG40R011M2HXTMA1?

IMBG40R011M2HXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMBG40R011M2HXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMBG40R011M2HXTMA1?

For technical support, including IMBG40R011M2HXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMBG40R011M2HXTMA1 requirements.

6.How does Aetrix verify that IMBG40R011M2HXTMA1 is sourced from the original manufacturer or authorized distributors?

All IMBG40R011M2HXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMBG40R011M2HXTMA1 meets industry standards.

7.What is the process for return or replacement of IMBG40R011M2HXTMA1?

All IMBG40R011M2HXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMBG40R011M2HXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMBG40R011M2HXTMA1 part is unused and in its original packaging.

Return procedure for IMBG40R011M2HXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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