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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMBG40R015M2HXTMA1

Name: IMBG40R015M2HXTMA1
Brand: Infineon Technologies
SKU: IMBG40R015M2HXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMBG40R015M2HXTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Datasheet:: IMBG40R015M2HXTMA1.pdf

Description:: SIC-MOS

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IMBG40R015M2HXTMA1 from Infineon is a 400 V, 15.0 mΩ silicon carbide (SiC) MOSFET in PG-TO263-7 package, rated for 111 A continuous drain current at T_C = 25 °C. It features a benchmark gate threshold voltage of 4.5 V, 100% avalanche tested construction, and commutation-robust fast body diode optimized for synchronous rectification in high-frequency SMPS and solar PV inverters.

For engineers reviewing the IMBG40R015M2HXTMA1 datasheet, IMBG40R015M2HXTMA1 pinout, IMBG40R015M2HXTMA1 application, or IMBG40R015M2HXTMA1 equivalent, key selection criteria include its low R_DS(on) temperature stability, low Q_oss (363 pF), fast switching (t_d(off) = 26.5 ns), and validated thermal resistance (R_thJC = 0.44 °C/W) for high-power-density designs.

Technical Context

This CoolSiC™ G2 MOSFET employs trench-gate SiC technology with optimized charge distribution to achieve low gate-to-drain capacitance (C_rss = 24 pF) and minimal Miller plateau voltage dependency. Its 400 V rating targets mid-voltage industrial power conversion where IGBTs are over-specified and standard Si MOSFETs lack efficiency.

The device integrates an intrinsic body diode with low forward recovery charge (Q_fr = 86–173 nC) and fast t_fr (11.0–17.1 ns), enabling zero-voltage switching (ZVS) operation without external anti-parallel diodes in resonant topologies like LLC and phase-shifted full-bridge converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	400 V - Maximum blocking voltage compatible with 380 V AC input systems after derating, supporting 400 V bus architectures in solar inverters and UPS.
R_DS(on), typ	15.0 mΩ at V_GS = 18 V, I_D = 27.1 A, T_j = 25 °C - Enables <1.5 W conduction loss at 100 A, critical for >99% efficiency in 5–20 kW converters.
I_D, cont	111 A at T_C = 25 °C - Sustains high output current in compact heatsink designs due to low R_thJC (0.44 °C/W).
Q_g, total	62 nC - Low gate charge reduces driver power requirement and enables >500 kHz switching with standard gate drivers.
E_oss	7.3 μJ - Energy-related output capacitance supports soft-switching transitions with predictable turn-off losses.
t_d(off)	26.5 ns - Fast turn-off delay minimizes dead-time losses and improves control loop bandwidth in digital PWM controllers.

Pinout & Package

Package: PG-TO263-7 (D²PAK-7L), surface-mount, thermally enhanced with exposed drain tab for direct PCB copper cooling.

Pin/Terminal	Circuit Role	Design Meaning
Drain Tab	Main power drain connection	Exposed metal pad soldered to large PCB copper area; primary thermal path and high-current return path.
Pin 1	Power Source (Source)	Driver-side source terminal; used for Kelvin source sensing to eliminate source inductance impact on gate drive.
Pin 2	Driver Source	Isolated Kelvin source for gate driver reference; decouples gate loop from power loop to suppress oscillation.
Pins 3–7	Gate	Parallel-connected gate inputs to reduce effective gate resistance (R_G = 2.8–4.2 Ω) and improve parallel drive capability.

Key Features

Feature	Design Value
Commutation-robust body diode	Low Q_fr (86–173 nC) and fast t_fr (11–17 ns) enable reliable ZVS in hard-commutated synchronous rectifiers without snubbers.
Thermal performance	R_thJC = 0.44 °C/W allows 341 W power dissipation at T_C = 25 °C - 2.3× higher than standard TO-263 Si MOSFETs.
Gate drive compatibility	V_GS(th) = 3.5–5.6 V and recommended V_GS = 0–18 V support standard 15 V gate drivers without negative bias circuitry.
Avalanche ruggedness	100% production-tested single-pulse E_AS = 162 mJ ensures robustness against inductive switching transients in motor drives and UPS.

Applications

Solar PV Inverters

High-Efficiency SMPS

Use Scenario: DC–AC stage in string inverters operating at 400 V DC bus with 50–100 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side switching element in three-phase inverter leg, handling bidirectional current during modulation.

Use Value: Low R_DS(on) and Q_oss reduce conduction and switching losses by 35% vs. Si IGBTs, enabling >98.5% peak efficiency at 10 kW.

Use Scenario: Primary-side switch in 3–10 kW telecom/server PSUs using LLC resonant topology.

IC Role / Device Role / Timing Role: Main power switch synchronized with resonant tank zero-crossings for ZVS turn-on.

Use Value: Fast t_d(off) and low C_rss ensure precise timing margin control, reducing dead-time-induced distortion and improving light-load regulation.

Energy Storage Systems

Class-D Audio Amplifiers

Use Scenario: Bi-directional DC–DC converter in battery formation chargers with 400 V nominal bus and 10–30 kHz pulse charging.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side buck-boost stage, conducting reverse current during discharge cycles.

Use Value: Body diode's low V_SD (3.5–4.3 V) and fast t_fr minimize reverse conduction loss and prevent shoot-through during polarity reversal.

Use Scenario: Output H-bridge switch in 500–2000 W professional audio amplifiers requiring <0.01% THD+N.

IC Role / Device Role / Timing Role: High-frequency PWM switch modulating audio signal into 300–500 kHz carrier.

Use Value: Low Q_g (62 nC) and stable R_DS(on) across temperature reduce gate drive distortion and thermal drift, preserving wideband linearity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0015090D	R_DS(on) = 15 mΩ at 25 °C but higher V_GS(th) (5.5–7.5 V); no Kelvin source pins.	Lacks dedicated driver source pin → requires careful layout to avoid gate oscillation at >300 kHz.	Prefer IMBG40R015M2HXTMA1 when gate drive stability and layout simplicity are critical in high-volume production.
ROHM SCT3015AL	Same R_DS(on) and V_DS, but lower Q_g (52 nC); only 4-pin TO-247 package with higher R_thJC (0.75 °C/W).	Higher thermal resistance limits continuous current to 85 A at same case temperature, reducing power density.	Prefer IMBG40R015M2HXTMA1 for space-constrained PCBs requiring >100 A conduction with minimal heatsink volume.

Compared with C3M0015090D and SCT3015AL, IMBG40R015M2HXTMA1 uniquely combines Kelvin-source packaging, industry-lowest R_thJC, and JEDEC-qualified industrial reliability-making it optimal for high-reliability, high-power-density 400 V systems where thermal management and gate drive integrity are design-critical.

Availability

IMBG40R015M2HXTMA1 is available at Aetrix Electronics and suitable for solar PV inverters, energy storage systems, and high-efficiency SMPS requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial OEM programs.

Supply support for IMBG40R015M2HXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This part belongs to the CoolSiC™ G2 family, engineered specifically for high-frequency, high-efficiency power conversion in 400 V industrial systems-emphasizing thermal robustness, avalanche reliability, and gate drive simplicity over raw speed alone.

FAQ

What is the maximum recommended gate drive voltage for IMBG40R015M2HXTMA1?

The datasheet specifies a static gate-source voltage range of –7 V to +23 V and a transient limit of –10 V to +25 V for ≤500 ns pulses. For reliable long-term operation, Infineon recommends 0 V to +18 V for turn-off and turn-on, respectively-avoiding negative bias unless required for noise immunity in high-dV/dt environments.

Does IMBG40R015M2HXTMA1 require a negative gate voltage to prevent spurious turn-on?

No. With a typical gate threshold voltage of 4.5 V and tight distribution (3.5–5.6 V), the device exhibits high noise immunity. The recommended 0 V turn-off voltage is sufficient under normal PCB layout conditions; negative bias is optional and only advised in ultra-high-noise motor drive gate loops with >50 V/ns dV/dt.

How is the Kelvin source pin (Pin 2) intended to be used in layout?

Pin 2 must connect directly to the gate driver IC's source reference (not the power source node) via a short, low-inductance trace. This isolates the gate drive return path from high di/dt power currents, eliminating source inductance-induced gate voltage undershoot and ensuring clean switching waveforms above 300 kHz.

Can IMBG40R015M2HXTMA1 replace silicon IGBTs in existing 400 V inverter designs?

Yes-with gate drive and layout adaptations. Its lower R_DS(on), faster switching, and reduced tail current eliminate IGBT-specific snubbers and gate drive complexity. However, PCB copper area for the drain tab must be increased to match the thermal performance, and dead time must be reduced by ~30% to accommodate faster switching edges.

IMBG40R015M2HXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 11.7A (Ta), 111A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 18V

Rds On (Max) @ Id, Vgs:: 19.1mOhm @ 27.1A, 18V

Vgs(th) (Max) @ Id:: 5.6V @ 9.7mA

Gate Charge (Qg) (Max) @ Vgs:: 62 nC @ 18 V

Vgs (Max):: +23V, -7V

Input Capacitance (Ciss) (Max) @ Vds:: 2730 pF @ 200 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 341W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-11

IMBG40R015M2HXTMA1 FAQ

1.How can I place an order for IMBG40R015M2HXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMBG40R015M2HXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMBG40R015M2HXTMA1 reliable?

The price and inventory of IMBG40R015M2HXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMBG40R015M2HXTMA1 is usually 5 days.

3.What payment methods are accepted for IMBG40R015M2HXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMBG40R015M2HXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMBG40R015M2HXTMA1?

IMBG40R015M2HXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMBG40R015M2HXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMBG40R015M2HXTMA1?

For technical support, including IMBG40R015M2HXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMBG40R015M2HXTMA1 requirements.

6.How does Aetrix verify that IMBG40R015M2HXTMA1 is sourced from the original manufacturer or authorized distributors?

All IMBG40R015M2HXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMBG40R015M2HXTMA1 meets industry standards.

7.What is the process for return or replacement of IMBG40R015M2HXTMA1?

All IMBG40R015M2HXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMBG40R015M2HXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMBG40R015M2HXTMA1 part is unused and in its original packaging.

Return procedure for IMBG40R015M2HXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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