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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMBG40R025M2HXTMA1

Name: IMBG40R025M2HXTMA1
Brand: Infineon Technologies
SKU: IMBG40R025M2HXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMBG40R025M2HXTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Datasheet:: IMBG40R025M2HXTMA1.pdf

Description:: SIC-MOS

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Product details

Overview

IMBG40R025M2HXTMA1 from Infineon is a 400 V, 25.4 mΩ typ. R_DS(on) silicon carbide (SiC) MOSFET in PG-TO263-7 package, rated for 68 A continuous drain current at T_C = 25 °C. It features a commutation-robust fast body diode (Q_rr = 59 nC), low gate charge (Q_g = 36 nC), and benchmark V_GS(th) = 4.5 V, enabling high-frequency switching in synchronous rectification stages of solar PV inverters.

For engineers reviewing the IMBG40R025M2HXTMA1 datasheet, IMBG40R025M2HXTMA1 pinout, IMBG40R025M2HXTMA1 application, or IMBG40R025M2HXTMA1 equivalent, key selection criteria include its 0.7 °C/W R_thJC, 100% avalanche-tested ruggedness, JEDEC-qualified industrial reliability, and optimized gate drive voltage range (0–18 V) for minimizing switching losses in hard-switched topologies.

Technical Context

This CoolSiC™ G2 MOSFET employs trench-gate SiC technology with integrated body diode optimized for low Q_rr and fast reverse recovery (t_fr = 8.9–13.6 ns). Its gate threshold voltage (V_GS(th) = 3.5–5.6 V) ensures robust noise immunity while supporting standard 15 V gate drivers.

The device delivers stable R_DS(on) over temperature (25.4 mΩ @ 25 °C, 31.1 mΩ @ 175 °C) and exhibits low output capacitance (C_oss = 180 pF) and energy-related C_oss,er = 211 pF, enabling efficient operation above 100 kHz in resonant and hard-switched SMPS designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	400 V - Maximum blocking voltage suitable for 380 V AC input systems with safety margin
R_DS(on),typ	25.4 mΩ - Enables <1.1 W conduction loss at 68 A, reducing heatsink requirements
I_D,cont	68 A @ T_C = 25 °C - Supports high-current power stages without paralleling
Q_g	36 nC - Low gate charge enables fast turn-on/off with moderate gate driver strength (e.g., 2 A peak)
E_oss	4.2 μJ - Low output energy reduces turn-off losses in hard-switched converters
R_thJC	0.7 °C/W - Superior thermal resistance allows >200 W power dissipation with modest heatsinking
Q_rr	59 nC - Low reverse recovery charge minimizes diode switching losses in synchronous rectifiers

Pinout & Package

Package: PG-TO263-7 (D²PAK-7L), surface-mount, thermally enhanced with isolated drain tab and Kelvin source connection.

Pin/Terminal	Circuit Role	Design Meaning
Drain Tab	Main power drain connection	Large copper area for low-inductance, high-current path and primary thermal conduction to PCB/heatsink
Pin 1	Power Source (Source)	High-current source terminal for main current return path
Pin 2	Driver Source (Kelvin Source)	Separate low-noise source reference for gate driver feedback, eliminating source inductance impact on switching
Pins 3–7	Gate	Parallel-connected gate terminals reduce gate loop inductance and improve switching consistency

Key Features

Feature	Design Value
Commutation-robust body diode	Q_rr = 59 nC and t_fr ≤ 13.6 ns enable reliable zero-voltage switching in LLC and phase-shifted full-bridge converters
Thermal performance	R_thJC = 0.7 °C/W supports >214 W power dissipation at T_C = 25 °C, reducing thermal derating in compact designs
Gate drive compatibility	V_GS range of 0–18 V allows use with industry-standard 15 V gate drivers without level-shifting
Avalanche ruggedness	100% tested single-pulse avalanche energy E_AS = 93 mJ ensures robustness against transient overvoltage events
JEDEC qualification	Fully qualified per JESD47/22 for industrial applications, including temperature cycling and HTRB

Applications

Solar PV Inverters

Energy Storage Systems (ESS)

Use Scenario: DC–AC conversion stage in string inverters operating at 100–200 kHz switching frequency with bidirectional power flow.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch in unidirectional boost stage and low-side switch in H-bridge inverter leg.

Use Value: 25.4 mΩ R_DS(on) and 59 nC Q_rr reduce conduction and reverse recovery losses by >18% vs. comparable Si MOSFETs, improving system efficiency to >98.5%.

Use Scenario: Bidirectional DC–DC converter interfacing battery stacks (400–800 V) with grid or load, requiring high reliability under partial-load and transient conditions.

IC Role / Device Role / Timing Role: Primary switching element in interleaved buck-boost topology, handling continuous 68 A and pulsed 204 A currents.

Use Value: 0.7 °C/W R_thJC and 175 °C T_j,max allow sustained operation at >95% duty cycle without thermal throttling in sealed enclosures.

Class-D Audio Amplifiers

Motor Drives (Industrial)

Use Scenario: Output half-bridge stage in high-fidelity 500–2000 W audio amplifiers, demanding ultra-low distortion and minimal dead-time-induced artifacts.

IC Role / Device Role / Timing Role: Fast-switching power switch with precise gate control enabled by Kelvin source and tight V_GS(th) tolerance (±1.1 V).

Use Value: Low C_iss = 1200–1690 pF and fast t_r/t_f (11.9 ns / 7.9 ns) support clean 500 kHz PWM with <0.005% THD+N at full power.

Use Scenario: Inverter leg in servo drives and variable-frequency drives for 3–10 kW industrial motors, operating in harsh ambient (T_a up to 85 °C) with frequent start-stop cycles.

IC Role / Device Role / Timing Role: Main switching device in 3-phase IGBT replacement design, leveraging SiC's temperature-stable R_DS(on) and avalanche capability.

Use Value: 100% avalanche testing and 175 °C junction rating ensure field reliability during motor stall or short-circuit events without external protection circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0025065K	R_DS(on) = 25 mΩ @ 25 °C; V_DS = 650 V; TO-247-4L package; higher R_thJC = 0.95 °C/W	Better suited for 600 V bus systems; less optimal thermal performance in space-constrained layouts	Select when 650 V rating is required and board-level thermal management permits larger footprint
IXFH40N40X3	Si-based MOSFET; R_DS(on) = 40 mΩ @ 25 °C; V_DS = 400 V; TO-247 package; no integrated fast diode	Higher conduction loss and slower body diode (Q_rr > 200 nC); requires external Schottky	Consider only for cost-sensitive, low-frequency (<50 kHz), non-synchronous designs where SiC benefits are not critical

Compared with C3M0025065K and IXFH40N40X3, IMBG40R025M2HXTMA1 offers superior thermal resistance (0.7 vs. 0.95/1.2 °C/W), lower Q_rr (59 vs. >120/200 nC), and optimized 400 V rating-making it the preferred choice for compact, high-efficiency 400 V industrial converters where thermal density and diode performance are decisive.

Availability

IMBG40R025M2HXTMA1 is available at Aetrix Electronics and suitable for solar PV inverters, energy storage systems, and Class-D audio amplifiers requiring stable component supply and long-term industrial lifecycle support.

Supply support for IMBG40R025M2HXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.

This part belongs to the CoolSiC™ G2 family, designed specifically for high-efficiency, high-power-density industrial power conversion systems operating at frequencies beyond 100 kHz.

FAQ

What is the recommended gate resistor value for IMBG40R025M2HXTMA1 in a 150 kHz hard-switched PFC stage?

A 2.2 Ω gate resistor is recommended for balanced switching speed and EMI control. This value achieves ~12 ns turn-on delay and ~8 ns fall time while limiting dV/dt to <25 V/ns, preventing spurious turn-on in high-di/dt environments typical of 3.3 kW PFC designs.

Does IMBG40R025M2HXTMA1 require negative gate voltage for reliable turn-off?

No. The device is fully specified for 0 V turn-off and does not require negative bias. Its V_GS(th) minimum of 3.5 V and low Miller capacitance (C_rss = 14 pF) ensure robust immunity to dv/dt-induced false turn-on even at 0 V gate drive.

Can the Kelvin source pin (Pin 2) be left unconnected in low-frequency applications?

No. Pin 2 must always be connected to the gate driver's source reference, even at low frequencies. Leaving it floating degrades gate control accuracy, increases switching losses by up to 15%, and risks oscillation due to source inductance coupling into the gate loop.

Is IMBG40R025M2HXTMA1 suitable for use in automotive on-board chargers (OBC)?

No. While qualified for industrial applications per JEDEC, it lacks AEC-Q101 qualification and automotive-specific stress testing (e.g., HTGB, uHAST). For OBC use, Infineon's automotive-grade CoolSiC™ variants (e.g., IMBG40R025M2HATMA1) are required.

IMBG40R025M2HXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Ta), 68A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 18V

Rds On (Max) @ Id, Vgs:: 32.1mOhm @ 15.7A, 18V

Vgs(th) (Max) @ Id:: 5.6V @ 5.6mA

Gate Charge (Qg) (Max) @ Vgs:: 36 nC @ 18 V

Vgs (Max):: +23V, -7V

Input Capacitance (Ciss) (Max) @ Vds:: 1690 pF @ 200 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 214W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-11

IMBG40R025M2HXTMA1 FAQ

1.How can I place an order for IMBG40R025M2HXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMBG40R025M2HXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMBG40R025M2HXTMA1 reliable?

The price and inventory of IMBG40R025M2HXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMBG40R025M2HXTMA1 is usually 5 days.

3.What payment methods are accepted for IMBG40R025M2HXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMBG40R025M2HXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMBG40R025M2HXTMA1?

IMBG40R025M2HXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMBG40R025M2HXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMBG40R025M2HXTMA1?

For technical support, including IMBG40R025M2HXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMBG40R025M2HXTMA1 requirements.

6.How does Aetrix verify that IMBG40R025M2HXTMA1 is sourced from the original manufacturer or authorized distributors?

All IMBG40R025M2HXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMBG40R025M2HXTMA1 meets industry standards.

7.What is the process for return or replacement of IMBG40R025M2HXTMA1?

All IMBG40R025M2HXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMBG40R025M2HXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMBG40R025M2HXTMA1 part is unused and in its original packaging.

Return procedure for IMBG40R025M2HXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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