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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMBG40R036M2HXTMA1

Name: IMBG40R036M2HXTMA1
Brand: Infineon Technologies
SKU: IMBG40R036M2HXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMBG40R036M2HXTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Datasheet:: IMBG40R036M2HXTMA1.pdf

Description:: SIC-MOS

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Product details

Overview

IMBG40R036M2HXTMA1 from Infineon is a 400 V, 36.4 mΩ typ. silicon carbide (SiC) MOSFET in PG-TO263-7 package, rated for 50 A continuous drain current at T_C = 25 °C and featuring 42 nC output charge and 3.0 μJ output energy. It delivers commutation-robust fast body diode performance with low Q_rr, benchmark V_GS(th) of 4.5 V, and 0–18 V gate drive compatibility - ideal for high-frequency synchronous rectification in solar PV inverters.

For engineers reviewing the IMBG40R036M2HXTMA1 datasheet, IMBG40R036M2HXTMA1 pinout, IMBG40R036M2HXTMA1 application, or IMBG40R036M2HXTMA1 equivalent, key selection criteria include R_DS(on) temperature stability, avalanche ruggedness (66 mJ single-pulse), thermal resistance (R_thJC = 0.9 °C/W), and gate charge profile optimized for hard-switched SMPS topologies.

Technical Context

This CoolSiC™ G2 MOSFET employs trench-gate SiC technology enabling low conduction loss and fast switching with minimal dependence of R_DS(on) on temperature. Its 400 V rating targets mid-voltage industrial power conversion where IGBTs are oversized and standard Si MOSFETs lack efficiency.

The device integrates a commutation-robust intrinsic body diode with 11.5 ns forward recovery time and 39–77 nC Q_fr, supporting zero-voltage switching (ZVS) and synchronous rectification without external diodes. Gate drive operates within 0–18 V, with V_GS(th) tightly distributed (3.5–5.6 V) to ensure reliable turn-on margin across temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	400 V - Supports DC bus up to 340 V nominal with 20% margin for transients in solar string inverters and UPS systems.
R_DS(on), typ.	36.4 mΩ @ V_GS = 18 V, I_D = 11.1 A, T_j = 25 °C - Enables <1.5 W conduction loss at 40 A, critical for >99% efficiency in 10–20 kW converters.
Q_oss	42 nC - Low output charge reduces turn-off losses and improves EMI behavior in hard-switched LLC and phase-shifted full-bridge designs.
E_oss	3.0 μJ @ V_DS = 200 V - Quantifies stored energy in output capacitance; directly impacts snubber sizing and ZVS transition reliability.
t_d(on)/t_r	13.0 ns / 11.9 ns - Fast switching enables >500 kHz operation while maintaining controllable dV/dt for gate driver selection.
Q_g	26 nC total gate charge - Defines required gate driver peak current (e.g., ≥2.6 A for 10 ns rise time), influencing driver IC selection.
R_thJC	0.9 °C/W - Enables high-power density thermal design; 50 A operation achievable with ≤45 °C case temperature rise under forced convection.

Pinout & Package

Package: PG-TO263-7 (D²PAK-7) with exposed drain tab for low-inductance, high-current PCB mounting and enhanced thermal transfer. Pin 1: Drain (tab); Pin 2: Source (driver side); Pins 3–7: Source (power return, paralleled for low inductance).

Pin/Terminal	Circuit Role	Design Meaning
Drain Tab (Pin 1)	Main power drain connection	Exposed copper tab serves as primary high-current path and thermal interface; must be soldered to ≥6 cm² copper pour for R_thJA = 40 °C/W.
Pin 2	Driver-side source	Provides Kelvin source connection for gate driver feedback loop, decoupling power and control source paths to suppress common-source inductance effects.
Pins 3–7	Power-side source	Parallel low-inductance source return path for main current; minimizes voltage overshoot during hard switching and improves di/dt immunity.

Key Features

Feature	Design Value
Commutation-robust body diode	Q_rr = 39–77 nC and t_fr = 8.5–11.5 ns enable reliable synchronous rectification without external diode in bidirectional converters.
JEDEC-qualified for industrial use	100% avalanche tested (E_AS = 66 mJ) and qualified per JESD47, ensuring robustness against overvoltage transients in motor drives and UPS.
Low temperature coefficient of R_DS(on)	R_DS(on) increases only ~20% from 25 °C to 175 °C - maintains stable conduction loss across wide junction temperature range.
Optimized gate charge profile	Q_gs = 7 nC, Q_gd = 5.4 nC - provides strong Miller immunity and predictable switching transitions under varying load conditions.
0–18 V gate drive range	Enables direct interfacing with industry-standard 15 V gate drivers and supports negative turn-off bias for improved noise immunity.

Applications

Solar PV String Inverters

Industrial UPS Systems

Use Scenario: High-efficiency DC–AC conversion in 10–25 kW string inverters with transformerless topology and unipolar modulation.

IC Role / Device Role / Timing Role: Synchronous rectifier switch in the H-bridge output stage, operating at 30–100 kHz with ZVS-assisted turn-on.

Use Value: 36.4 mΩ R_DS(on) and low Q_oss reduce conduction + switching losses by >35% vs. comparable Si MOSFETs, enabling >98.5% peak efficiency.

Use Scenario: Bidirectional DC–DC stage in modular UPS units handling battery charging and grid backup with fast load-step response.

IC Role / Device Role / Timing Role: High-side switch in interleaved buck-boost converter, managing 400 V DC bus and 50 A continuous current.

Use Value: Avalanche ruggedness (66 mJ) and 175 °C max T_j ensure reliable operation during battery short-circuit events and thermal cycling.

Class-D Audio Amplifiers

High-Frequency SMPS

Use Scenario: Output stage in >1 kW professional audio amplifiers requiring ultra-low THD+N and wide bandwidth (>100 kHz).

IC Role / Device Role / Timing Role: Half-bridge power switch in PWM-based amplifier, switching at 300–500 kHz with precise dead-time control.

Use Value: Fast t_r/t_f (11.9/8.1 ns) and low C_rss (10 pF) minimize switching distortion and improve open-loop bandwidth stability.

Use Scenario: Primary-side switch in resonant LLC and active-clamp forward converters for server PSUs and telecom rectifiers.

IC Role / Device Role / Timing Role: Main switching element operating at 300–700 kHz with soft-switching, leveraging low Q_g and Q_oss.

Use Value: 26 nC Q_g and 42 nC Q_oss reduce gate drive loss and capacitive turn-off loss, enabling >96% efficiency at 1 MHz-equivalent switching frequency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0032100K	R_DS(on) = 32 mΩ (lower), V_DS = 1000 V (higher), Q_g = 34 nC (higher), TO247-4L package	Over-specified voltage rating increases cost and layout complexity for 400 V systems; higher Q_g demands stronger gate driver.	Select when 1000 V rating is required for future-proofing or multi-string series architectures; avoid if optimizing for 400 V cost/performance.
ON Semiconductor NVHL040N040SC1	R_DS(on) = 40 mΩ (higher), V_DS = 400 V (same), Q_g = 22 nC (lower), DFN8x8 package	Lower thermal capability (R_thJC ≈ 1.5 °C/W), no Kelvin source, limited to <35 A continuous in same footprint.	Prefer for space-constrained, lower-current (<30 A) applications where board area is critical and thermal headroom exists.

Compared with C3M0032100K and NVHL040N040SC1, IMBG40R036M2HXTMA1 uniquely balances 400 V rating, 36.4 mΩ R_DS(on), Kelvin-source layout, and 0.9 °C/W R_thJC - making it optimal for thermally demanding, high-reliability industrial 400 V converters where layout control and avalanche margin are prioritized.

Availability

IMBG40R036M2HXTMA1 is available at Aetrix Electronics and suitable for solar PV inverters, industrial UPS systems, and high-frequency SMPS requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IMBG40R036M2HXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and wide-bandgap devices, with global manufacturing and qualification infrastructure.

This part belongs to the CoolSiC™ G2 family - engineered specifically for high-efficiency, high-frequency industrial power conversion, emphasizing ruggedness, thermal performance, and gate drive simplicity in 400–650 V applications.

FAQ

What is the maximum recommended gate drive voltage for IMBG40R036M2HXTMA1?

The absolute maximum gate-source voltage is 23 V (DC) and 25 V (transient, ≤500 ns). Infineon specifies 0–18 V as the recommended operating range, with 15–18 V optimal for lowest R_DS(on) and robust noise immunity. Driving above 18 V yields diminishing R_DS(on) improvement while increasing gate oxide stress risk.

Does IMBG40R036M2HXTMA1 require a negative gate voltage for turn-off?

No. The device is fully specified for 0 V turn-off and exhibits stable threshold behavior down to 0 V. However, applying –2 to –5 V improves noise immunity in high-dV/dt environments and reduces unintended turn-on risk during paralleling - a design choice, not a requirement.

How is the drain tab electrically isolated in the PG-TO263-7 package?

The drain tab is the primary drain terminal and is not electrically isolated - it must be connected to the high-side DC bus potential. Thermal isolation is achieved via dielectric PCB layers or insulating thermal pads; electrical isolation requires external circuit design (e.g., floating gate drivers) and is not provided by the package itself.

Can IMBG40R036M2HXTMA1 replace silicon IGBTs in existing 400 V motor drives?

Yes - with gate driver and layout adaptation. Its 400 V rating, 50 A current capability, and 175 °C T_j match typical IGBT specs, but its faster switching demands lower gate loop inductance and careful snubber design. Efficiency gains are significant, but EMI filtering may require re-optimization due to higher dV/dt.

IMBG40R036M2HXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 7.6A (Ta), 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 18V

Rds On (Max) @ Id, Vgs:: 45.7mOhm @ 11.1A, 18V

Vgs(th) (Max) @ Id:: 5.6V @ 4mA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 18 V

Vgs (Max):: +23V, -7V

Input Capacitance (Ciss) (Max) @ Vds:: 1170 pF @ 200 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 167W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-11

IMBG40R036M2HXTMA1 FAQ

1.How can I place an order for IMBG40R036M2HXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMBG40R036M2HXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMBG40R036M2HXTMA1 reliable?

The price and inventory of IMBG40R036M2HXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMBG40R036M2HXTMA1 is usually 5 days.

3.What payment methods are accepted for IMBG40R036M2HXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMBG40R036M2HXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMBG40R036M2HXTMA1?

IMBG40R036M2HXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMBG40R036M2HXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMBG40R036M2HXTMA1?

For technical support, including IMBG40R036M2HXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMBG40R036M2HXTMA1 requirements.

6.How does Aetrix verify that IMBG40R036M2HXTMA1 is sourced from the original manufacturer or authorized distributors?

All IMBG40R036M2HXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMBG40R036M2HXTMA1 meets industry standards.

7.What is the process for return or replacement of IMBG40R036M2HXTMA1?

All IMBG40R036M2HXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMBG40R036M2HXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMBG40R036M2HXTMA1 part is unused and in its original packaging.

Return procedure for IMBG40R036M2HXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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