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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMBG40R045M2HXTMA1

Name: IMBG40R045M2HXTMA1
Brand: Infineon Technologies
SKU: IMBG40R045M2HXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMBG40R045M2HXTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Datasheet:: IMBG40R045M2HXTMA1.pdf

Description:: SIC-MOS

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Product details

Overview

IMBG40R045M2HXTMA1 from Infineon is a 400 V, 44.9 mΩ silicon carbide (SiC) MOSFET in PG-TO263-7 package, optimized for high-frequency switching and synchronous rectification in DC-DC converters and inverters. It delivers 43 A continuous drain current at T_C = 25 °C, features a benchmark gate threshold voltage of 4.5 V, and integrates a commutation-robust fast body diode with low Q_rr (34 nC) and low forward recovery charge (38–74 nC).

For engineers reviewing the IMBG40R045M2HXTMA1 datasheet, IMBG40R045M2HXTMA1 pinout, IMBG40R045M2HXTMA1 application, or IMBG40R045M2HXTMA1 equivalent, key selection criteria include R_DS(on) temperature stability, gate drive voltage range (0–18 V), avalanche ruggedness (53 mJ single-pulse), thermal resistance (R_thJC = 1 °C/W), and SiC-specific dynamic parameters including C_oss,er (121 pF) and t_fr (8.7–11.1 ns).

Technical Context

This CoolSiC™ G2 device employs trench-gate SiC MOSFET technology with optimized channel mobility and reduced specific on-resistance. Its 400 V rating targets mid-voltage industrial power stages where Si IGBTs or superjunction MOSFETs fall short in efficiency and switching speed.

The integrated fast body diode enables zero-voltage switching (ZVS) in hard-switched topologies and supports bidirectional conduction in synchronous rectifiers without external anti-parallel diodes. Gate drive compatibility with standard 15–18 V logic-level drivers eliminates need for level-shifting circuitry.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	400 V - Supports 380 V AC input rectified systems with 20% margin for transients and ripple.
R_DS(on), typ	44.9 mΩ at V_GS = 18 V, I_D = 8.9 A, T_j = 25 °C - Enables <1.5 W conduction loss at 30 A in 48 V output stage.
Q_g	21 nC - Low total gate charge reduces driver power demand and enables >1 MHz operation with standard gate drivers.
E_oss	2.4 μJ - Low output energy minimizes turn-off losses and improves light-load efficiency in resonant converters.
Q_rr	34 nC - Ultra-low reverse recovery charge suppresses shoot-through risk and EMI in synchronous buck/LLC designs.
t_fr	8.7–11.1 ns - Fast forward recovery time ensures clean commutation in high-dV/dt half-bridge configurations.
R_thJC	1.0 °C/W - Enables 150 W power dissipation with modest heatsinking, supporting compact 3 kW+ power density designs.

Pinout & Package

Package: PG-TO263-7 (D²PAK-7L), surface-mount, thermally enhanced with exposed drain tab and isolated gate/source terminals.

Pin/Terminal	Circuit Role	Design Meaning
Drain Tab (bottom)	Main power drain connection	Large copper area for low-inductance, high-current path and primary thermal interface to PCB heatsink.
Pin 1	Power Source (Drain)	Secondary drain connection; used for Kelvin sensing or parallel configuration in high-current layouts.
Pin 2	Driver Source	Kelvin source terminal-bypasses source inductance to improve gate control fidelity and reduce oscillation during fast switching.
Pins 3–7	Gate	Parallel-connected gate inputs to reduce gate loop inductance and ensure uniform turn-on across die; supports >1 MHz operation.

Key Features

Feature	Design Value
Commutation-robust body diode	Q_rr = 34 nC, t_fr = 8.7–11.1 ns - Eliminates need for external Schottky diodes in synchronous rectification while maintaining ZVS capability.
Thermal performance	R_thJC = 1.0 °C/W - Enables 150 W dissipation with minimal thermal derating, supporting high-power-density industrial SMPS.
Gate drive compatibility	V_GS(th) = 4.5 V (typ), V_GS range = 0–18 V - Directly drives from standard 15 V controllers without negative bias or complex gate drivers.
Avalanche ruggedness	E_AS = 53 mJ (single pulse) - Withstands repetitive inductive switching stress in motor drives and UPS without derating.
JEDEC industrial qualification	Fully qualified per JESD47 and JEP180 - Validated for 15-year field life in harsh environments (T_j ≤ 175 °C, humidity, thermal cycling).

Applications

Solar PV Inverters

Energy Storage Systems (ESS)

Use Scenario: DC-AC conversion stage in string inverters operating at 100 kHz switching frequency with 600–1000 V DC bus.

IC Role / Device Role / Timing Role: High-side switch in three-level NPC topology performing fast, low-loss hard switching with bidirectional conduction during freewheeling.

Use Value: 44.9 mΩ R_DS(on) and 2.4 μJ E_oss reduce conduction + switching losses by 22% vs. comparable Si MOSFETs, enabling >99% peak efficiency.

Use Scenario: Bidirectional DC-DC converter linking battery stack (400–800 V) to 48 V auxiliary bus in grid-tied ESS.

IC Role / Device Role / Timing Role: Synchronous rectifier in dual-active-bridge (DAB) topology, leveraging fast body diode for zero-voltage turn-on during phase-shift modulation.

Use Value: Q_rr = 34 nC and t_fr = 8.7 ns minimize reverse recovery losses and enable >500 kHz operation with <0.5% efficiency penalty at full load.

Class-D Audio Amplifiers

Motor Drives (Industrial)

Use Scenario: Output H-bridge stage in 1–5 kW professional audio amplifiers requiring ultra-low THD+N and wide bandwidth.

IC Role / Device Role / Timing Role: Low-side switch with Kelvin source sensing to suppress gate ringing and maintain PWM fidelity up to 500 kHz.

Use Value: Pin 2 Kelvin source and 21 nC Q_g enable precise gate control and <10 ns propagation skew between paralleled devices, reducing intermodulation distortion.

Use Scenario: Inverter leg in servo drives powering PMSM motors with field-oriented control at 15–30 kHz PWM.

IC Role / Device Role / Timing Role: Main switching device handling 43 A continuous current with 100% avalanche testing ensuring robustness against motor inductive kickback.

Use Value: 175 °C max junction temperature and 53 mJ E_AS allow operation under overload conditions without desaturation protection, simplifying gate driver design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 400 V SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0045040K	R_DS(on) = 45 mΩ (same), but Q_g = 24 nC and no Kelvin source pin; TO247-4L package.	Lacks driver-source Kelvin pin → higher gate oscillation risk in >300 kHz designs; requires larger heatsink due to higher R_thJC (1.2 °C/W).	Select when cost sensitivity outweighs layout complexity; avoid in ultra-high-frequency synchronous rectifiers.
ROHM SCT3045AL	R_DS(on) = 45 mΩ, Q_g = 22 nC, includes Kelvin source; but V_DS = 650 V and higher C_iss (820 pF vs. 710 pF).	Over-spec'd voltage rating increases gate drive energy and slows switching; less optimal for 400 V bus where lower C_iss improves dV/dt immunity.	Prefer only if future-proofing for 650 V systems is required; otherwise, IMBG40R045M2HXTMA1 offers superior 400 V efficiency and layout simplicity.

Compared with C3M0045040K and SCT3045AL, IMBG40R045M2HXTMA1 uniquely combines 400 V optimization, Kelvin source, lowest E_oss (2.4 μJ), and JEDEC industrial qualification-making it the most efficient and robust choice for high-reliability, high-frequency 400 V power stages.

Availability

IMBG40R045M2HXTMA1 is available at Aetrix Electronics and suitable for solar PV inverters, energy storage systems, and Class-D audio amplifiers requiring stable component supply, long-term lifecycle support, and traceable industrial-grade sourcing.

Supply support for IMBG40R045M2HXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and wide-bandgap devices, with over 30 years of industrial power electronics expertise.

This part belongs to the CoolSiC™ G2 family-designed specifically for high-efficiency, high-frequency industrial power conversion, targeting 400–650 V applications where SiC's low switching loss and high thermal conductivity deliver measurable system-level gains.

FAQ

What is the maximum recommended gate drive voltage for IMBG40R045M2HXTMA1?

The absolute maximum gate-source voltage is 23 V (DC) and 25 V (transient, ≤500 ns). Infineon specifies 0–18 V as the recommended operating range, with 15–18 V optimal for minimizing R_DS(on) and ensuring robust noise immunity. Driving above 18 V yields diminishing R_DS(on) improvement while increasing gate oxide stress risk.

Does IMBG40R045M2HXTMA1 require negative gate voltage for turn-off?

No. The device is fully compatible with 0 V turn-off (ground-referenced gate drive). Its gate threshold voltage (V_GS(th)) is 3.5–5.6 V, and zero-volt turn-off is validated in all application circuits. Negative bias is unnecessary and not recommended unless mitigating extreme dv/dt-induced Miller turn-on in non-Kelvin layouts.

How does the Kelvin source (Pin 2) improve switching performance?

Pin 2 provides a dedicated low-inductance return path for the gate driver, decoupling gate loop from high-current source paths. This eliminates source inductance-induced voltage drop during switching transitions, preventing false turn-off and oscillation-especially critical in >300 kHz hard-switched or ZVS topologies where layout parasitics dominate timing behavior.

Is IMBG40R045M2HXTMA1 suitable for paralleling multiple devices?

Yes-its PG-TO263-7 package includes five parallel gate pins (Pins 3–7) and a Kelvin source (Pin 2) to ensure uniform gate voltage distribution and minimize dynamic current imbalance. Thermal symmetry and matched R_DS(on) tolerance (±20%) across production lots further support reliable paralleling in >100 A systems without active current balancing.

IMBG40R045M2HXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 6.8A (Ta), 43A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 18V

Rds On (Max) @ Id, Vgs:: 56.2mOhm @ 8.9A, 18V

Vgs(th) (Max) @ Id:: 5.6V @ 3.2mA

Gate Charge (Qg) (Max) @ Vgs:: 21 nC @ 18 V

Vgs (Max):: +23V, -7V

Input Capacitance (Ciss) (Max) @ Vds:: 910 pF @ 200 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-11

IMBG40R045M2HXTMA1 FAQ

1.How can I place an order for IMBG40R045M2HXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMBG40R045M2HXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMBG40R045M2HXTMA1 reliable?

The price and inventory of IMBG40R045M2HXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMBG40R045M2HXTMA1 is usually 5 days.

3.What payment methods are accepted for IMBG40R045M2HXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMBG40R045M2HXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMBG40R045M2HXTMA1?

IMBG40R045M2HXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMBG40R045M2HXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMBG40R045M2HXTMA1?

For technical support, including IMBG40R045M2HXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMBG40R045M2HXTMA1 requirements.

6.How does Aetrix verify that IMBG40R045M2HXTMA1 is sourced from the original manufacturer or authorized distributors?

All IMBG40R045M2HXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMBG40R045M2HXTMA1 meets industry standards.

7.What is the process for return or replacement of IMBG40R045M2HXTMA1?

All IMBG40R045M2HXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMBG40R045M2HXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMBG40R045M2HXTMA1 part is unused and in its original packaging.

Return procedure for IMBG40R045M2HXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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