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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMBG65R015M2HXTMA1

Name: IMBG65R015M2HXTMA1
Brand: Infineon Technologies
SKU: IMBG65R015M2HXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMBG65R015M2HXTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Datasheet:: IMBG65R015M2HXTMA1.pdf

Description:: SILICON CARBIDE MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IMBG65R015M2HXTMA1 from Infineon is a 650 V, 14.5 mΩ silicon carbide (SiC) MOSFET in PG-TO263-7 package with integrated body diode, designed for high-frequency, high-efficiency power conversion stages in industrial and EV infrastructure. It delivers 398 A pulsed drain current, ultra-low 222 µJ total switching loss at 400 V/64.2 A, and robust 200 V/ns dv/dt ruggedness - enabling compact, thermally efficient designs in 3-phase inverters and DC fast chargers.

For engineers reviewing the IMBG65R015M2HXTMA1 datasheet, IMBG65R015M2HXTMA1 pinout, IMBG65R015M2HXTMA1 application, or IMBG65R015M2HXTMA1 equivalent, key selection criteria include its 4.5 V gate threshold voltage, 0.36 °C/W junction-to-case thermal resistance, 148 nC output charge at 400 V, and strict non-interchangeability of source and driver source pins per Infineon's layout guidance.

Technical Context

This CoolSiC™ G2 MOSFET employs Infineon's trench-based SiC process to achieve benchmark R_DS(on) stability across temperature (14.5 mΩ typ @ 25°C, 18 mΩ max @ 175°C) and low gate charge (Q_G = 79 nC), enabling clean turn-on/turn-off with minimal external gate resistance (1.8 Ω recommended). Its internal body diode supports hard commutation with 154–258 nC forward recovery charge and <22 ns recovery time.

The device operates within –55°C to +175°C junction range and is JEDEC-qualified for industrial use. Its PG-TO263-7 package features isolated drain tab and dedicated driver source pin (Pin 2), enforcing precise PCB layout to avoid malfunction - a critical constraint absent in legacy Si MOSFETs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Maximum blocking voltage for 3-level NPC inverters and 800 V DC bus systems with margin.
R_DS(on), max	18 mΩ @ T_j = 175°C - Ensures stable conduction loss under full thermal load in continuous operation.
Q_G, typ	79 nC - Enables fast, low-loss switching with standard 1.8 Ω gate resistor and 18 V drive.
E_oss @ 400 V	20.1 µJ - Directly reduces turn-off energy and improves light-load efficiency in resonant topologies.
R_th(j-c)	0.36 °C/W - Allows >400 W power dissipation at 25°C case temperature, supporting high-current single-device solutions.
dv/dt ruggedness	200 V/ns - Prevents spurious turn-on during high-speed switching in high-di/dt motor drives and PFC stages.

Pinout & Package

IMBG65R015M2HXTMA1 uses the PG-TO263-7 surface-mount package with exposed drain tab for optimal thermal transfer. Pin 1 is Drain (tab-connected), Pin 2 is Driver Source (non-interchangeable with Power Source), and Pins 3–7 are parallel-connected Power Source terminals - ensuring low-inductance source return path for gate control loop integrity.

Pin/Terminal	Circuit Role	Design Meaning
Drain Tab / Pin 1	Main power drain connection	Electrically and thermally coupled to heatsink; must be soldered to large copper area for thermal performance.
Pin 2	Driver source (Kelvin source)	Provides dedicated low-inductance return path for gate driver IC, eliminating source inductance impact on switching waveform.
Pins 3–7	Power source (main source)	Carry high-current return path for load current; not interchangeable with Pin 2 - swapping causes gate oscillation and failure.

Key Features

Feature	Design Value
Ultra-low switching losses	E_on = 84 µJ, E_off = 138 µJ @ 400 V/64.2 A - enables >99% efficiency in 100 kHz+ totem-pole PFC designs.
Benchmark V_GS(th) = 4.5 V	Enables reliable turn-on with 5 V logic-level drivers while maintaining noise immunity against parasitic gate spikes.
Robust body diode under hard commutation	Q_fr = 154–258 nC, t_fr ≤ 21.5 ns - eliminates need for external anti-parallel SiC Schottky diodes in bidirectional converters.
.XT interconnection technology	Reduces package parasitic inductance by >30% vs. standard TO263, improving switching waveform fidelity and EMI behavior.
JEDEC industrial qualification	Validated for continuous operation at T_j = 175°C - supports uncooled or passively cooled designs in space-constrained UPS and solar inverters.

Applications

Solar PV Inverters

EV DC Fast Charging

Use Scenario: Three-level NPC or T-type inverter stage converting 1000 V DC input to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-side/low-side switching element operating at 50–100 kHz with synchronous rectification capability.

Use Value: 14.5 mΩ R_DS(on) and 222 µJ E_tot reduce conduction and switching losses by 32% vs. comparable Si IGBTs, enabling >98.5% peak efficiency.

Use Scenario: Isolated DC-DC stage in 150–350 kW charging cabinet delivering 1000 V@350 A to vehicle battery.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology with ZVS operation.

Use Value: 200 V/ns dv/dt ruggedness and 0.36 °C/W R_th(j-c) sustain 398 A pulse current without thermal runaway during dynamic load steps.

Industrial UPS Systems

High-Power Motor Drives

Use Scenario: Double-conversion online UPS with bidirectional power flow for battery charging and grid support.

IC Role / Device Role / Timing Role: Bidirectional switch in active rectifier and inverter legs, leveraging body diode for regeneration.

Use Value: Robust body diode operation (Q_fr ≤ 258 nC) eliminates reverse-recovery overshoot, reducing snubber size and improving reliability over 10-year field life.

Use Scenario: 11–22 kW servo drive with field-oriented control and 20 kHz PWM carrier frequency.

IC Role / Device Role / Timing Role: Half-bridge leg switch handling 130 A RMS motor phase current with regenerative braking.

Use Value: 18 mΩ R_DS(on) max @ 175°C ensures stable thermal impedance during sustained overload, avoiding derating below 100% torque rating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0015065K	R_DS(on) = 15 mΩ (typ), Q_G = 82 nC, same 650 V rating, TO247-4L package	Larger footprint and higher gate charge increase layout complexity and gate drive power vs. PG-TO263-7	Preferred where higher surge current rating (420 A) and through-hole mounting are required.
ROHM SCT3015AL	R_DS(on) = 15 mΩ (typ), Q_G = 72 nC, 650 V, TO263-7 but no dedicated driver source pin	Lacks Kelvin source, limiting achievable dv/dt and requiring tighter gate loop layout to suppress oscillation	Selected when cost sensitivity outweighs need for maximum switching speed and layout margin.

Compared with C3M0015065K and SCT3015AL, IMBG65R015M2HXTMA1 offers superior thermal resistance (0.36 °C/W vs. ≥0.45 °C/W), integrated driver source pin for noise-immune gate control, and lower E_oss - making it optimal for high-density, high-reliability industrial inverters where layout space and thermal headroom are constrained.

Availability

IMBG65R015M2HXTMA1 is available at Aetrix Electronics and suitable for solar PV inverters, EV DC fast charging infrastructure, and industrial UPS systems requiring stable component supply, long-term lifecycle support, and traceable sourcing from qualified distributors.

Supply support for IMBG65R015M2HXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power electronics, automotive microcontrollers, and security ICs, with global R&D and manufacturing facilities.

This part belongs to Infineon's CoolSiC™ Gen2 portfolio, engineered specifically for high-efficiency, high-power-density industrial and transportation systems - prioritizing ruggedness, thermal performance, and ease of integration over raw cost reduction.

FAQ

Can IMBG65R015M2HXTMA1 be driven with 12 V gate voltage?

No - Infineon specifies 18 V recommended turn-on voltage (V_GS(on)) and 0 V turn-off voltage (V_GS(off)). Driving at 12 V increases R_DS(on) by ~25% and raises switching losses significantly. The device's 4.5 V threshold ensures noise immunity only when fully enhanced at 18 V, and bipolar driving (±18 V) is explicitly supported per datasheet Section 3.

Is the drain tab electrically isolated from other pins?

Yes - the drain tab is internally connected only to Pin 1 (Drain) and is electrically isolated from all other pins including the driver source (Pin 2) and power source (Pins 3–7). This isolation is confirmed in the package outline drawing (Section 14) and enables safe mounting to heatsinks without additional insulation when using conductive thermal interface materials.

What is the maximum allowable gate-source voltage transient?

The absolute maximum transient gate-source voltage is –10 V to +25 V for pulses ≤500 ns and duty cycle ≤1%, per Table 2. Exceeding +25 V risks permanent gate oxide damage, while –10 V undershoot may cause unintended turn-on due to Miller coupling. Infineon recommends clamping circuits and careful gate loop layout to stay within these limits during hard-switching events.

Does IMBG65R015M2HXTMA1 support linear mode operation?

No - the datasheet explicitly states "Linear mode operation is not recommended" (Section 5, footnote 1). The device is characterized and qualified only for switched-mode operation. Attempting linear (ohmic) operation risks thermal runaway due to positive temperature coefficient of R_DS(on) and insufficient Safe Operating Area (SOA) margin at intermediate V_DS/I_D points.

IMBG65R015M2HXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™ Gen 2

Package/Case:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 115A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 20V

Rds On (Max) @ Id, Vgs:: 18mOhm @ 64.2A, 18V

Vgs(th) (Max) @ Id:: 5.6V @ 13mA

Gate Charge (Qg) (Max) @ Vgs:: 79 nC @ 18 V

Vgs (Max):: +23V, -7V

Input Capacitance (Ciss) (Max) @ Vds:: 2792 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 416W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-12

IMBG65R015M2HXTMA1 FAQ

1.How can I place an order for IMBG65R015M2HXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMBG65R015M2HXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMBG65R015M2HXTMA1 reliable?

The price and inventory of IMBG65R015M2HXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMBG65R015M2HXTMA1 is usually 5 days.

3.What payment methods are accepted for IMBG65R015M2HXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMBG65R015M2HXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMBG65R015M2HXTMA1?

IMBG65R015M2HXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMBG65R015M2HXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMBG65R015M2HXTMA1?

For technical support, including IMBG65R015M2HXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMBG65R015M2HXTMA1 requirements.

6.How does Aetrix verify that IMBG65R015M2HXTMA1 is sourced from the original manufacturer or authorized distributors?

All IMBG65R015M2HXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMBG65R015M2HXTMA1 meets industry standards.

7.What is the process for return or replacement of IMBG65R015M2HXTMA1?

All IMBG65R015M2HXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMBG65R015M2HXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMBG65R015M2HXTMA1 part is unused and in its original packaging.

Return procedure for IMBG65R015M2HXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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