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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMBG65R030M1HXTMA1

Name: IMBG65R030M1HXTMA1
Brand: Infineon Technologies
SKU: IMBG65R030M1HXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMBG65R030M1HXTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Datasheet:: IMBG65R030M1HXTMA1.pdf

Description:: SILICON CARBIDE MOSFET PG-TO263-

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Product details

Overview

IMBG65R030M1HXTMA1 from Infineon is a 650 V, 30 mΩ silicon carbide (SiC) MOSFET in PG-TO263-7 package with Kelvin source configuration, rated for 142 A peak drain current and optimized for hard-switching topologies requiring low switching losses and high thermal robustness. It delivers 17.2 μJ turn-off energy at 400 V, supports 175 °C junction operation, and is qualified per JEDEC for industrial applications including solar inverters and EV charging.

For engineers reviewing the IMBG65R030M1HXTMA1 datasheet, IMBG65R030M1HXTMA1 pinout, IMBG65R030M1HXTMA1 application, or IMBG65R030M1HXTMA1 equivalent, key selection criteria include its 30 mΩ R_DS(on) at 25 °C, 48 nC total gate charge, Kelvin-source layout for reduced gate loop inductance, and validated avalanche capability of 251 mJ (single pulse).

Technical Context

This CoolSiC™ M1 generation device uses trench-gate SiC technology to achieve superior commutation robustness and gate oxide reliability at T_j,max = 175 °C. Its fast body diode features low Q_rr (120 nC) and short t_fr (22.2 ns), enabling zero-voltage switching (ZVS) and hard commutation without external freewheeling diodes.

The PG-TO263-7 package integrates a dedicated Kelvin source terminal (Pin 2) separate from the power source (Pins 3–7), reducing gate drive loop inductance by up to 4× versus standard TO-263. This architecture directly enables lower E_oss (114 nC at 400 V) and stable switching behavior under high-current transients.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Maximum blocking voltage for 650 V DC-link systems like solar string inverters and 800 V EV chargers.
R_DS(on), typ	30 mΩ at V_GS = 18 V, I_D = 29.5 A, T_j = 25 °C - Enables low conduction loss in high-current PFC and output stages.
Q_G	48 nC at V_DD = 400 V, I_D = 29.5 A - Determines gate driver power requirement and influences switching speed control.
E_oss	17.2 μJ at V_DD = 400 V - Directly impacts turn-off loss in hard-switched converters; lower than comparable Si devices.
T_j,max	175 °C - Allows operation in compact, high-power-density designs without derating at elevated ambient temperatures.
Thermal R_th(j–c)	0.64 °C/W - Enables high-power dissipation (234 W at T_c = 25 °C) with minimal case-to-heatsink temperature rise.

Pinout & Package

PG-TO263-7 package with isolated drain tab (Pin 1), gate (Pin 7), Kelvin source (Pin 2), and parallel power source terminals (Pins 3–6). The Kelvin source pin must not be exchanged with power source pins to avoid malfunction.

Pin/Terminal	Circuit Role	Design Meaning
Drain Tab (Pin 1)	Main current return path	Large copper tab for low-inductance, high-current drain connection and thermal conduction to heatsink.
Kelvin Source (Pin 2)	Sense reference for gate drive	Provides gate loop return independent of power source, minimizing V_GS distortion during high di/dt switching.
Power Source (Pins 3–6)	Main current return path	Four parallel terminals reduce resistance and inductance in high-current source paths (e.g., 63 A continuous).
Gate (Pin 7)	Control input	Standard MOSFET gate interface compatible with 0–18 V logic-level drivers; internal R_G,int = 5.0 Ω.

Key Features

Feature	Design Value
Commutation-robust body diode	Q_rr = 120 nC, t_fr = 22.2 ns - Enables reliable hard commutation in totem-pole PFC without external diodes.
Kelvin source configuration	4× lower switching losses vs. non-Kelvin layout - Achieved via dedicated gate-sense return path eliminating source inductance effects.
JEDEC-qualified reliability	Validated for industrial lifetime at T_j ≤ 175 °C - Supports 10+ year operation in UPS and solar infrastructure without accelerated wear-out.
Low C_oss energy	E_oss = 17.2 μJ at 400 V - Reduces turn-off loss and improves efficiency in 100 kHz+ LLC and phase-shifted full-bridge topologies.

Applications

Telecom & Server SMPS

UPS (Uninterruptible Power Supplies)

Use Scenario: High-efficiency 3.3 kW server PSU using interleaved totem-pole PFC and LLC resonant converter.

IC Role / Device Role / Timing Role: Primary-side SiC MOSFET in both PFC and LLC half-bridge legs, operating at 100–200 kHz with ZVS.

Use Value: 30 mΩ R_DS(on) and 17.2 μJ E_oss enable >98% system efficiency while maintaining <85 °C case temperature under full load.

Use Scenario: Online double-conversion UPS with bidirectional 650 V DC-link and battery charging/inverter stage.

IC Role / Device Role / Timing Role: Bidirectional switch in 4-switch buck-boost AC/DC and DC/AC inverter bridge.

Use Value: 142 A peak current rating and 251 mJ single-pulse avalanche energy ensure fault tolerance during grid transients and battery short-circuit events.

Solar PV Inverters

EV Charging Infrastructure

Use Scenario: 15 kW string inverter with three-phase NPC-T-type topology and 1700 V DC-link clamping.

IC Role / Device Role / Timing Role: High-side and low-side switching device in T-type leg, handling 650 V blocking and 40 A RMS output current.

Use Value: 175 °C T_j,max and 0.64 °C/W R_th(j–c) allow passive cooling in outdoor enclosures with ambient up to 60 °C.

Use Scenario: 22 kW AC/DC OBC (on-board charger) with dual-phase interleaved PFC and CLLC DC/DC stage.

IC Role / Device Role / Timing Role: Primary-side switch in CLLC transformer-isolated DC/DC converter, switching at 300 kHz with soft switching.

Use Value: Low Q_rr (120 nC) and fast t_fr (22.2 ns) minimize reverse recovery loss and EMI during high-frequency ZVS transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0030065K	R_DS(on) = 30 mΩ, V_DS = 650 V, but TO-247-4L package with no Kelvin source; higher switching losses due to gate loop inductance.	Lacks Kelvin source; less suitable for >150 kHz hard-switched topologies where gate ringing is critical.	Select when board space allows larger TO-247 footprint and gate drive design tolerates higher loop inductance.
IXFH30N65X2	Si-based 650 V MOSFET, R_DS(on) = 32 mΩ, but higher Q_G (72 nC) and E_oss (42 μJ); T_j,max = 150 °C.	Lower thermal capability and higher switching loss limit use to <65 kHz topologies with forced air cooling.	Select only for cost-sensitive, lower-frequency (<50 kHz) designs where SiC ROI is not justified.

Compared with C3M0030065K and IXFH30N65X2, IMBG65R030M1HXTMA1 provides superior high-frequency efficiency via Kelvin source and lower E_oss, while enabling higher power density through 175 °C operation and 0.64 °C/W thermal resistance-critical for sealed, fanless EV and solar systems.

Availability

IMBG65R030M1HXTMA1 is available at Aetrix Electronics and suitable for telecom SMPS, UPS systems, and solar PV inverters requiring stable component supply across multi-year production cycles and extended lifecycle planning.

Supply support for IMBG65R030M1HXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.

This device belongs to the CoolSiC™ M1 generation, designed specifically for high-efficiency, high-reliability industrial power conversion systems operating at elevated temperatures and high switching frequencies.

FAQ

Can IMBG65R030M1HXTMA1 be driven with standard 15 V gate drivers?

Yes, it is fully compatible with standard 15 V logic-level gate drivers. The recommended turn-on voltage is 18 V, but operation at 15 V is supported with minor R_DS(on) increase (typical 33 mΩ at 15 V). Gate threshold voltage is 4.5 V (typ), ensuring robust noise immunity at 15 V drive.

What is the maximum allowable gate-source voltage during transient conditions?

The absolute maximum transient gate-source voltage is 25 V for ≤1% duty cycle pulses. Continuous operation above 20 V risks gate oxide degradation over time. Infineon specifies 23 V as the static maximum, and recommends limiting gate drive to 18 V for long-term reliability per IPC-9592B guidelines.

Is the Kelvin source pin electrically isolated from the power source pins?

No-it shares the same source potential but is physically separated to provide a dedicated low-inductance return path for the gate driver. Pins 3–7 are the high-current power source terminals; Pin 2 is the Kelvin sense source. Exchanging them causes gate control instability and must be avoided.

Does this MOSFET require a negative gate turn-off voltage?

No, it operates reliably with 0 V turn-off. The recommended turn-off voltage is 0 V, and the device has no requirement for negative bias. However, applying –2 V to 0 V is permitted per the operating range (V_GS(off) = 0 V, min –2 V), offering margin against spurious turn-on in noisy environments.

IMBG65R030M1HXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 63A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 18V

Rds On (Max) @ Id, Vgs:: 42mOhm @ 29.5A, 18V

Vgs(th) (Max) @ Id:: 5.7V @ 8.8mA

Gate Charge (Qg) (Max) @ Vgs:: 49 nC @ 18 V

Vgs (Max):: +23V, -5V

Input Capacitance (Ciss) (Max) @ Vds:: 1643 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 234W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-12

IMBG65R030M1HXTMA1 FAQ

1.How can I place an order for IMBG65R030M1HXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMBG65R030M1HXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMBG65R030M1HXTMA1 reliable?

The price and inventory of IMBG65R030M1HXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMBG65R030M1HXTMA1 is usually 5 days.

3.What payment methods are accepted for IMBG65R030M1HXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMBG65R030M1HXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMBG65R030M1HXTMA1?

IMBG65R030M1HXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMBG65R030M1HXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMBG65R030M1HXTMA1?

For technical support, including IMBG65R030M1HXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMBG65R030M1HXTMA1 requirements.

6.How does Aetrix verify that IMBG65R030M1HXTMA1 is sourced from the original manufacturer or authorized distributors?

All IMBG65R030M1HXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMBG65R030M1HXTMA1 meets industry standards.

7.What is the process for return or replacement of IMBG65R030M1HXTMA1?

All IMBG65R030M1HXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMBG65R030M1HXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMBG65R030M1HXTMA1 part is unused and in its original packaging.

Return procedure for IMBG65R030M1HXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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