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Infineon Technologies IMBG65R048M1HXTMA1

Name: IMBG65R048M1HXTMA1
Brand: Infineon Technologies
SKU: IMBG65R048M1HXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMBG65R048M1HXTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Datasheet:: IMBG65R048M1HXTMA1.pdf

Description:: SILICON CARBIDE MOSFET PG-TO263-

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Product details

Overview

IMBG65R048M1HXTMA1 from Infineon is a 650 V, 48 mΩ silicon carbide (SiC) MOSFET in PG-TO263-7 package with Kelvin source configuration, rated for 99 A peak drain current and optimized for hard-switching topologies requiring low switching losses and high thermal robustness up to T_j,max = 175 °C. It delivers 11.7 μJ E_oss at 400 V and features a commutation-robust fast body diode with 82 nC Q_frm.

For engineers reviewing the IMBG65R048M1HXTMA1 datasheet, IMBG65R048M1HXTMA1 pinout, IMBG65R048M1HXTMA1 application, or IMBG65R048M1HXTMA1 equivalent, key selection criteria include R_DS(on),typ = 48 mΩ, Q_G = 33 nC, C_oss,er = 146 pF, Kelvin-source layout compatibility, and JEDEC-qualified industrial reliability.

Technical Context

This CoolSiC™ M1 generation device uses trench-gate SiC technology to achieve low R_DS(on) temperature dependency and superior gate oxide stability. Its Kelvin source terminal enables precise gate drive referencing, reducing voltage overshoot and enabling up to 4× lower switching losses versus conventional 3-pin TO263 SiC MOSFETs.

The device integrates a fast, low-Q_rr internal body diode (t_fr = 20.1 ns, Q_frm = 82 nC) and supports 200 V/ns dv/dt ruggedness. Gate threshold voltage V_GS(th) is tightly distributed (3.5–5.7 V), and it operates reliably within V_GS = –2 to +20 V, with recommended turn-on/turn-off at 18 V / 0 V.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Maximum blocking voltage for 650 V DC-link applications like solar inverters and EV chargers
R_DS(on),typ	48 mΩ at V_GS = 18 V, I_D = 20.1 A, T_j = 25 °C - Enables high-efficiency conduction with minimal thermal rise
Q_G	33 nC at V_DD = 400 V, I_D = 20.1 A - Low gate charge reduces driver power and simplifies gate drive design
E_oss	11.7 μJ at V_DD = 400 V - Energy-related output capacitance directly impacts hard-switching loss in LLC and phase-shifted full-bridge
t_d(on)	6.7 ns - Short turn-on delay supports high-frequency operation (>100 kHz) without timing skew issues
T_j,max	175 °C - Enables compact heatsinking and operation in harsh ambient environments (e.g., outdoor UPS, telecom rectifiers)
R_th(j–c)	0.82 °C/W - Low junction-to-case thermal resistance allows direct mounting to heatsink for high-power density designs

Pinout & Package

Package: PG-TO263-7 (surface-mount, 7-pin variant with isolated drain tab and Kelvin source).

Pin/Terminal	Circuit Role	Design Meaning
Drain Tab	Main power drain connection	Large copper area for high-current conduction and thermal dissipation; electrically tied to pins 1 and 7
Pin 1	Drain	Secondary drain connection; used for PCB routing continuity and current sharing with Drain Tab
Pin 2	Kelvin Source (S_K)	Reference return for gate driver; eliminates source inductance impact on switching waveform fidelity
Pin 3–7	Power Source (S)	Parallel source terminals carrying load current; low-inductance layout supports high di/dt commutation
Pin ?	Gate	Control input (pin 4 per Infineon package outline); requires <1.8 Ω external gate resistor for optimal dV/dt control

Key Features

Feature	Design Value
Kelvin source configuration	Enables accurate gate-source voltage control under high di/dt, reducing switching overshoot and improving EMI behavior
Commutation-robust body diode	t_fr = 20.1 ns and Q_frm = 82 nC support ZVS/ZCS transitions in totem-pole PFC and bidirectional converters
JEDEC-qualified for industrial use	Validated per JESD47 and JEP180 for 15+ year lifetime at T_j ≤ 150 °C, eliminating early-life failure risk
Low R_DS(on) temperature coefficient	R_DS(on),max = 64 mΩ at T_j = 175 °C ensures stable conduction loss across operating range
200 V/ns dv/dt ruggedness	Withstands fast voltage transients in high-speed switching without spurious turn-on or latch-up

Applications

Telecom & Server SMPS

UPS (Uninterruptible Power Supplies)

Use Scenario: High-density 3.3 kW–6 kW AC/DC front-end rectifiers operating at 100–300 kHz with >98% efficiency targets.

IC Role / Device Role / Timing Role: Primary-side high-side switch in interleaved totem-pole PFC and phase-shifted full-bridge LLC stages.

Use Value: 48 mΩ R_DS(on) and 11.7 μJ E_oss reduce conduction + switching losses by ~18% vs. Si counterparts, enabling fanless operation.

Use Scenario: Online double-conversion UPS systems with 10–40 kVA rating requiring high reliability and wide input voltage range.

IC Role / Device Role / Timing Role: Inverter-stage switching device in three-phase IGBT replacement topology using SiC half-bridges.

Use Value: 175 °C T_j,max and 200 V/ns dv/dt rating ensure stable operation during grid fault transients and extended overload conditions.

Solar PV Inverters

EV Charging Infrastructure

Use Scenario: String inverters (5–15 kW) and central inverters (100+ kW) with transformerless topologies and 1500 V DC input.

IC Role / Device Role / Timing Role: DC-link switching element in NPC or T-type three-level inverter legs handling 650 V blocking and 50–100 A RMS current.

Use Value: Low Q_G (33 nC) and fast t_r/t_f (9.6 ns / 7.0 ns) enable 50–100 kHz PWM with minimal dead-time penalty and reduced THD.

Use Scenario: 11–22 kW AC Level 2 and 150–350 kW DC fast-charging modules with liquid-cooled power stacks.

IC Role / Device Role / Timing Role: Output stage switch in bidirectional OBC (on-board charger) and DC-DC isolation converters.

Use Value: Fast body diode (t_fr = 20.1 ns) and low Q_frm (82 nC) minimize reverse recovery loss during regenerative braking and V2G operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 650 V SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0048065K	R_DS(on),typ = 48 mΩ, but no Kelvin source; Q_G = 35 nC; C_oss,er = 152 pF	Lacks dedicated Kelvin source, limiting high-di/dt switching fidelity in totem-pole PFC	Select when cost sensitivity outweighs need for ultra-low switching loss and gate drive precision
ROHM SCT3048KL	R_DS(on),typ = 48 mΩ, Kelvin source present; Q_G = 36 nC; T_j,max = 175 °C; JEDEC-qualified	Higher gate charge increases driver loss; slightly higher E_oss (12.5 μJ)	Prefer when existing ROHM ecosystem integration (gate drivers, layout libraries) reduces time-to-market

Compared with C3M0048065K and SCT3048KL, IMBG65R048M1HXTMA1 offers the lowest effective switching loss due to its combination of Kelvin source, lowest E_oss, and tightest V_GS(th) distribution-critical for parallel operation and high-reliability industrial systems.

Availability

IMBG65R048M1HXTMA1 is available at Aetrix Electronics and suitable for telecom rectifiers, UPS inverters, and solar PV string inverters requiring stable component supply, long-lifecycle assurance, and JEDEC-qualified reliability.

Supply support for IMBG65R048M1HXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in SiC and GaN technologies since 2001.

This part belongs to the CoolSiC™ M1 generation-a 650 V SiC MOSFET product line engineered for industrial-grade hard-switching power conversion, emphasizing gate oxide reliability, thermal robustness, and system-level efficiency in high-frequency SMPS, UPS, and renewable energy systems.

FAQ

What is the purpose of the Kelvin source (Pin 2) on IMBG65R048M1HXTMA1?

Pin 2 is the Kelvin source terminal, providing a dedicated low-inductance return path for the gate driver circuit. It isolates gate loop inductance from the main power source path (Pins 3–7), preventing voltage spikes during high di/dt switching that could cause false turn-on or oscillation. This improves switching waveform fidelity and EMI performance in high-frequency topologies like totem-pole PFC.

Can IMBG65R048M1HXTMA1 replace silicon IGBTs in existing 650 V inverter designs?

Yes-when gate drive and layout are updated to accommodate SiC requirements: faster gate drivers (≤1.8 Ω R_G,ext), tighter layout for Kelvin source, and revised snubber design. Its 650 V rating, 99 A peak current, and 175 °C T_j,max allow direct substitution in many UPS and solar inverter half-bridges, delivering 3–5% system efficiency gain and enabling higher switching frequencies to shrink magnetics.

Is IMBG65R048M1HXTMA1 qualified for automotive applications?

No-it is fully qualified per JEDEC standards for industrial applications only (JESD47, JEP180). It lacks AEC-Q101 qualification, automotive-specific stress testing, and PPAP documentation. For automotive traction or OBC use, Infineon's automotive-grade CoolSiC™ variants (e.g., IMZ120R045M1H) must be selected instead.

What is the maximum continuous drain current rating at 100 °C case temperature?

The datasheet specifies I_DC = 32 A at T_c = 100 °C (Table 2). This derated value accounts for thermal limits under sustained conduction; actual usable current depends on PCB copper area, heatsink interface, and ambient airflow. With 62 mm² of 70 μm copper on FR4, typical continuous current is 28–30 A at T_c = 100 °C.

IMBG65R048M1HXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 18V

Rds On (Max) @ Id, Vgs:: 64mOhm @ 20.1A, 18V

Vgs(th) (Max) @ Id:: 5.7V @ 6mA

Gate Charge (Qg) (Max) @ Vgs:: 33 nC @ 18 V

Vgs (Max):: +23V, -5V

Input Capacitance (Ciss) (Max) @ Vds:: 1118 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 183W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-12

IMBG65R048M1HXTMA1 FAQ

1.How can I place an order for IMBG65R048M1HXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMBG65R048M1HXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMBG65R048M1HXTMA1 reliable?

The price and inventory of IMBG65R048M1HXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMBG65R048M1HXTMA1 is usually 5 days.

3.What payment methods are accepted for IMBG65R048M1HXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMBG65R048M1HXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMBG65R048M1HXTMA1?

IMBG65R048M1HXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMBG65R048M1HXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMBG65R048M1HXTMA1?

For technical support, including IMBG65R048M1HXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMBG65R048M1HXTMA1 requirements.

6.How does Aetrix verify that IMBG65R048M1HXTMA1 is sourced from the original manufacturer or authorized distributors?

All IMBG65R048M1HXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMBG65R048M1HXTMA1 meets industry standards.

7.What is the process for return or replacement of IMBG65R048M1HXTMA1?

All IMBG65R048M1HXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMBG65R048M1HXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMBG65R048M1HXTMA1 part is unused and in its original packaging.

Return procedure for IMBG65R048M1HXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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