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Infineon Technologies IMBG65R057M1HXTMA1

Name: IMBG65R057M1HXTMA1
Brand: Infineon Technologies
SKU: IMBG65R057M1HXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMBG65R057M1HXTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Datasheet:: IMBG65R057M1HXTMA1.pdf

Description:: SILICON CARBIDE MOSFET PG-TO263-

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Product details

Overview

IMBG65R057M1HXTMA1 from Infineon is a 650 V, 57 mΩ silicon carbide (SiC) MOSFET in PG-TO263-7 package with Kelvin source configuration, rated for 84 A peak drain current and optimized for hard-switching topologies requiring low switching losses and high thermal robustness up to T_j,max = 175 °C. It features a commutation-robust fast body diode (t_fr = 19.4 ns), low Q_oss (65 nC @ 400 V), and R_DS(on) stable over temperature - deployed in telecom/server SMPS and EV charging infrastructure.

For engineers reviewing the IMBG65R057M1HXTMA1 datasheet, IMBG65R057M1HXTMA1 pinout, IMBG65R057M1HXTMA1 application, or IMBG65R057M1HXTMA1 equivalent, key selection criteria include its Kelvin-source-enabled gate drive stability, avalanche energy rating (E_AS = 142 mJ), junction-to-case thermal resistance (R_th(j–c) = 0.93 °C/W), and compatibility with standard 18 V gate drivers.

Technical Context

This CoolSiC™ M1-generation SiC MOSFET uses trench-gate technology on silicon carbide substrate to deliver low R_DS(on) temperature coefficient and high dv/dt immunity (200 V/ns). Its integrated Kelvin source terminal decouples power and signal return paths, enabling precise gate control and minimizing common-source inductance effects during high-di/dt switching.

The device exhibits low output charge (Q_oss = 65 nC @ 400 V) and reverse transfer capacitance (C_rss = 10.7 pF), supporting high-frequency operation in resonant and hard-switched converters. Its body diode shows fast recovery (Q_frm = 69 nC, t_fr = 19.4 ns) and low forward voltage (V_SD = 4.0 V), reducing commutation losses in bidirectional topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Maximum blocking voltage for use in 400 V DC bus systems with 1.5× safety margin.
R_DS(on),typ	57 mΩ at V_GS = 18 V, I_D = 16.7 A, T_j = 25 °C - Enables high-efficiency conduction in 3–5 kW power stages.
Q_G	28 nC - Low total gate charge reduces driver power demand and enables <10 ns turn-on delay (t_d(on) = 6.4 ns).
E_AS	142 mJ - Single-pulse avalanche capability supports reliable operation under transient overvoltage conditions without external clamping.
R_th(j–c)	0.93 °C/W - Enables direct heatsink mounting with minimal thermal interface resistance for compact thermal design.
t_fr	19.4 ns - Fast body diode recovery minimizes reverse recovery loss and EMI in ZVS/ZCS circuits.
I_D,pulse	84 A - Peak current rating supports high-power pulse loads in UPS and solar inverters.

Pinout & Package

Package: PG-TO263-7 (D²PAK-7L), surface-mount with isolated drain tab and Kelvin source configuration. Thermal pad on drain tab ensures low R_th(j–c).

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main power drain connection and thermal path	Exposed copper tab soldered to PCB copper pour for simultaneous electrical conduction and heat dissipation.
Pin 1	Gate	Standard gate input; driven by 0–18 V logic-level signals compatible with industry-standard gate drivers.
Pin 2	Kelvin Source (Sense Source)	Provides dedicated low-inductance return path for gate driver feedback, eliminating source inductance impact on switching waveform fidelity.
Pins 3–7	Power Source	Parallel source terminals carrying main load current; low-inductance layout reduces voltage overshoot during turn-off.

Key Features

Feature	Design Value
Kelvin source configuration	Enables stable gate control under >100 A/μs di/dt by isolating gate loop from power loop inductance.
Commutation-robust body diode	t_fr = 19.4 ns and Q_frm = 69 nC allow zero-voltage switching in totem-pole PFC without external Si diodes.
High-temperature reliability	Rated for continuous operation at T_j = 175 °C with JEDEC qualification for industrial applications.
Low C_rss/C_iss ratio	C_rss = 10.7 pF / C_iss = 930 pF = 1.15% - Minimizes Miller effect and improves noise immunity in high-dV/dt environments.
Avalanche-rated structure	Guaranteed single-pulse E_AS = 142 mJ supports unclamped inductive switching in motor drives and UPS hold-up stages.

Applications

Telecom & Server SMPS

EV Charging Infrastructure

Use Scenario: 3.3 kW LLC resonant converter in 48 V intermediate bus architecture.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 300–500 kHz with ZVS turn-on.

Use Value: Low Q_oss (65 nC) and fast t_fr reduce dead-time loss and improve light-load efficiency by >2.1%.

Use Scenario: 11 kW AC/DC OBC (on-board charger) with dual-phase interleaved totem-pole PFC.

IC Role / Device Role / Timing Role: Bidirectional SiC switch handling both AC line rectification and battery discharge regeneration.

Use Value: Stable R_DS(on) across –40 to 175 °C enables consistent thermal derating and eliminates need for dynamic current limiting.

Solar PV Inverters

Energy Storage Systems

Use Scenario: 10 kW string inverter with three-level NPC topology.

IC Role / Device Role / Timing Role: High-side and low-side switching device in phase-leg modules requiring symmetrical dv/dt immunity.

Use Value: dv/dt rating of 200 V/ns prevents false turn-on during cross-conduction, improving system uptime in dusty/humid outdoor environments.

Use Scenario: 50 kW battery formation charger with multi-stage constant-current/constant-voltage profiles.

IC Role / Device Role / Timing Role: Main DC–DC isolation stage switch handling repetitive 84 A pulses at 100 kHz.

Use Value: Junction-to-case R_th(j–c) = 0.93 °C/W allows direct heatsink mounting without thermal vias, reducing board area by 28% vs. TO-247 alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0065065K	R_DS(on) = 65 mΩ (higher), Q_G = 32 nC (higher), no Kelvin source, TO-247-4L package	Lacks Kelvin source; requires careful gate loop layout to mitigate oscillation in >200 kHz designs	Select when cost sensitivity outweighs need for ultra-low switching loss and layout simplicity.
ROHM SCT3060AL	R_DS(on) = 60 mΩ, Q_G = 30 nC, Kelvin source present, but T_j,max = 175 °C not JEDEC-qualified for industrial use	Not fully qualified per JEDEC JESD47 for long-term industrial reliability; limited availability in high-volume programs	Prefer for prototyping or non-critical commercial applications where qualification timeline is constrained.

Compared with C3M0065065K and SCT3060AL, IMBG65R057M1HXTMA1 delivers lower conduction loss (57 mΩ), superior gate drive stability via Kelvin source, and full JEDEC industrial qualification - making it optimal for production-grade telecom, EV, and renewable energy systems demanding field-proven reliability.

Availability

IMBG65R057M1HXTMA1 is available at Aetrix Electronics and suitable for telecom/server SMPS, EV charging infrastructure, and solar PV inverters requiring stable component supply, long-lifecycle support, and traceable sourcing from Infineon's certified fab.

Supply support for IMBG65R057M1HXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.

This part belongs to the CoolSiC™ M1 generation - designed specifically for high-efficiency, high-power-density industrial and automotive power conversion systems operating above 100 kHz and up to 175 °C junction temperature.

FAQ

Can IMBG65R057M1HXTMA1 be used without a Kelvin source connection?

No. The Kelvin source (Pin 2) must be connected directly to the gate driver's source reference node. Leaving it unconnected or tying it to the power source pins introduces gate loop inductance that causes oscillation, delayed turn-off, and potential device failure under high di/dt. Infineon explicitly warns against exchanging source pins.

What is the maximum recommended gate drive voltage for reliable long-term operation?

The maximum static gate–source voltage is 23 V, but Infineon recommends limiting V_GS to ≤18 V in continuous operation per IPC-9592B guidelines. Transient spikes up to 25 V are allowed only for ≤1% duty cycle; exceeding this risks gate oxide degradation and reduced lifetime beyond 10 years at full load.

How does the body diode performance compare to silicon alternatives in totem-pole PFC?

This device's body diode achieves t_fr = 19.4 ns and Q_frm = 69 nC - 3.2× faster and 65% lower recovery charge than typical 650 V Si superjunction MOSFETs. That enables clean ZVS in totem-pole PFC at 100–200 kHz without snubbers or external SiC diodes, reducing BOM count and conduction loss by 1.8 W per switch.

Is IMBG65R057M1HXTMA1 suitable for linear-mode (saturation) operation?

No. As a power switching MOSFET, it is not characterized or rated for linear-mode operation. Its Safe Operating Area (SOA) diagram shows strict pulse-width limitations at low V_DS, and prolonged operation in the linear region causes localized thermal runaway due to positive R_DS(on) temperature coefficient below 10 V_GS. Use only in switched-mode topologies.

IMBG65R057M1HXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 39A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 18V

Rds On (Max) @ Id, Vgs:: 74mOhm @ 16.7A, 18V

Vgs(th) (Max) @ Id:: 5.7V @ 5mA

Gate Charge (Qg) (Max) @ Vgs:: 28 nC @ 18 V

Vgs (Max):: +23V, -5V

Input Capacitance (Ciss) (Max) @ Vds:: 930 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 161W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-12

IMBG65R057M1HXTMA1 FAQ

1.How can I place an order for IMBG65R057M1HXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMBG65R057M1HXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMBG65R057M1HXTMA1 reliable?

The price and inventory of IMBG65R057M1HXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMBG65R057M1HXTMA1 is usually 5 days.

3.What payment methods are accepted for IMBG65R057M1HXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMBG65R057M1HXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMBG65R057M1HXTMA1?

IMBG65R057M1HXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMBG65R057M1HXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMBG65R057M1HXTMA1?

For technical support, including IMBG65R057M1HXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMBG65R057M1HXTMA1 requirements.

6.How does Aetrix verify that IMBG65R057M1HXTMA1 is sourced from the original manufacturer or authorized distributors?

All IMBG65R057M1HXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMBG65R057M1HXTMA1 meets industry standards.

7.What is the process for return or replacement of IMBG65R057M1HXTMA1?

All IMBG65R057M1HXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMBG65R057M1HXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMBG65R057M1HXTMA1 part is unused and in its original packaging.

Return procedure for IMBG65R057M1HXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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